Produkte > EGF
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||
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EGF.0B.200.CZZ | LEMO | Description: CONN INSERT SHELL RCPT JAM NUT | Produkt ist nicht verfügbar | |||||||||||||||||
EGF.0B.303.CLL | LEMO | Description: CONN PNL MNT RCPT 3SKT SLD CUP | Produkt ist nicht verfügbar | |||||||||||||||||
EGF.0B.303.CLN | LEMO | Description: CONN PNL MNT RCPT 3SKT STR PCB | Produkt ist nicht verfügbar | |||||||||||||||||
EGF.0B.304.CLL | LEMO | Description: CONN PNL MNT RCPT 4SKT SLD CUP | Produkt ist nicht verfügbar | |||||||||||||||||
EGF.0B.306.CLL | LEMO | Circular Push Pull Connectors RECEPTACLE W. NUT | Produkt ist nicht verfügbar | |||||||||||||||||
EGF.0B.306.CLL | LEMO | Description: CONN PNL MNT RCPT 6SKT SLD CUP | Produkt ist nicht verfügbar | |||||||||||||||||
EGF.1B.308.CLL | LEMO | Circular Push Pull Connectors LBR KeyF 8C FEMALE SOLDER | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF.2B.319.CLL | LEMO | Description: CONN PNL MNT RCPT 19SKT SLD CUP | Produkt ist nicht verfügbar | |||||||||||||||||
EGF.2B.319.CLN | LEMO | Description: CONN PNL MNT RCPT 19SKT STR PCB | Produkt ist nicht verfügbar | |||||||||||||||||
EGF.2B.319.CYM | LEMO | Description: CONN PNL MNT RCPT 19SKT CRIMP | Produkt ist nicht verfügbar | |||||||||||||||||
EGF.4K.340.CLL | LEMO | Description: CONN PNL MNT RCPT 40SKT SLD CUP | Produkt ist nicht verfügbar | |||||||||||||||||
EGF107M1HG1BRRSHP | SAMXON | Category: THT electrolytic capacitors Description: Capacitor: electrolytic; low ESR; THT; 100uF; 50VDC; Ø10x12.5mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: THT Capacitance: 100µF Operating voltage: 50V DC Body dimensions: Ø10x12.5mm Terminal pitch: 5mm Tolerance: ±20% Service life: 3000h Impedance: 0.12Ω Operating temperature: -40...105°C | auf Bestellung 12100 Stücke: Lieferzeit 14-21 Tag (e) |
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EGF107M1HG1BRRSHP | SAMXON | Category: THT electrolytic capacitors Description: Capacitor: electrolytic; low ESR; THT; 100uF; 50VDC; Ø10x12.5mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: THT Capacitance: 100µF Operating voltage: 50V DC Body dimensions: Ø10x12.5mm Terminal pitch: 5mm Tolerance: ±20% Service life: 3000h Impedance: 0.12Ω Operating temperature: -40...105°C Anzahl je Verpackung: 10 Stücke | auf Bestellung 12100 Stücke: Lieferzeit 7-14 Tag (e) |
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EGF107M1VE11RRSHP | SAMXON | Category: THT electrolytic capacitors Description: Capacitor: electrolytic; low ESR; THT; 100uF; 35VDC; Ø6.3x11mm Type of capacitor: electrolytic Kind of capacitor: low ESR Capacitance: 100µF Operating voltage: 35V DC Mounting: THT Tolerance: ±20% Operating temperature: -40...105°C Terminal pitch: 2.5mm Body dimensions: Ø6.3x11mm Impedance: 0.22Ω Service life: 2000h | Produkt ist nicht verfügbar | |||||||||||||||||
EGF107M1VE11RRSHP | SAMXON | Category: THT electrolytic capacitors Description: Capacitor: electrolytic; low ESR; THT; 100uF; 35VDC; Ø6.3x11mm Type of capacitor: electrolytic Kind of capacitor: low ESR Capacitance: 100µF Operating voltage: 35V DC Mounting: THT Tolerance: ±20% Operating temperature: -40...105°C Terminal pitch: 2.5mm Body dimensions: Ø6.3x11mm Impedance: 0.22Ω Service life: 2000h Anzahl je Verpackung: 20 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
EGF108M1JK25RRSHP | SAMXON | Category: THT electrolytic capacitors Description: Capacitor: electrolytic; low ESR; THT; 1000uF; 63VDC; Ø16x25mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: THT Capacitance: 1mF Operating voltage: 63V DC Body dimensions: Ø16x25mm Terminal pitch: 7.5mm Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
EGF108M1JK25RRSHP | SAMXON | Category: THT electrolytic capacitors Description: Capacitor: electrolytic; low ESR; THT; 1000uF; 63VDC; Ø16x25mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: THT Capacitance: 1mF Operating voltage: 63V DC Body dimensions: Ø16x25mm Terminal pitch: 7.5mm Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C | Produkt ist nicht verfügbar | |||||||||||||||||
EGF10G | auf Bestellung 69439 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
EGF143 | N/A | 06+ | auf Bestellung 323 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
EGF1A | ONSEMI | Description: ONSEMI - EGF1A - MISCELLANEOUS MOSFETS tariffCode: 85411000 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2977 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
EGF1A | ON Semiconductor | Rectifier Diode Switching 50V 1A 50ns 2-Pin SMA T/R | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1A | Fairchild Semiconductor | Description: DIODE GEN PURP 50V 1A DO214AC Packaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V | auf Bestellung 2977 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1A | onsemi / Fairchild | Rectifiers 1.0a Rectifier UF Recovery | auf Bestellung 5868 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1A-E3/5CA | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 50V 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1A-E3/5CA | Vishay General Semiconductor | Rectifiers 50 Volt 1.0A 50ns Glass Passivated | auf Bestellung 6119 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1A-E3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 50V 1A DO214BA | auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
EGF1A-E3/67A | Vishay General Semiconductor | Rectifiers 1.0 Amp 50 Volt 50ns | auf Bestellung 34356 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1A-E3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 50V 1A DO214BA | auf Bestellung 8216 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
EGF1AHE3/5CA | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 50V 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1AHE3/67A | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 50V 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1AHE3_A/H | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 50V 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1AHE3_A/H | Vishay Semiconductors | Rectifiers 1A,50V,50NS AEC-Q101 Qualified | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1AHE3_A/I | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 50V 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1AHE3_A/I | Vishay Semiconductors | Rectifiers 1A,50V,50NS AEC-Q101 Qualified | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1AHE3_B/H | Vishay | 1A,50V,50NS,UF SUPERECT,SMD | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1AHE3_B/H | Vishay General Semiconductor | Rectifiers 50V 30Amp AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1B | ONSEMI | Description: ONSEMI - EGF1B - Diode mit kurzer/ultrakurzer Erholzeit, 100 V, 1 A, Einfach, 1 V, 50 ns, 30 A tariffCode: 85411000 Bauform - Diode: DO-214AC (SMA) Durchlassstoßstrom: 30A rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: 0 Qualifikation: 0 Durchlassspannung, max.: 0 Sperrverzögerungszeit: 50ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 1A euEccn: NLR Wiederkehrende Spitzensperrspannung: 0 Anzahl der Pins: 0 Produktpalette: EGF1B productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 0 SVHC: Lead (23-Jan-2024) | auf Bestellung 19360 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
EGF1B | onsemi | Description: DIODE GEN PURP 100V 1A DO214AC | auf Bestellung 3679 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1B | ONSEMI | Description: ONSEMI - EGF1B - Diode mit kurzer/ultrakurzer Erholzeit, 100 V, 1 A, Einfach, 1 V, 50 ns, 30 A tariffCode: 85411000 Bauform - Diode: DO-214AC (SMA) Durchlassstoßstrom: 30A rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: 0 Qualifikation: 0 Durchlassspannung, max.: 0 Sperrverzögerungszeit: 50ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 1A euEccn: NLR Wiederkehrende Spitzensperrspannung: 0 Anzahl der Pins: 0 Produktpalette: EGF1B productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 0 SVHC: Lead (23-Jan-2024) | auf Bestellung 19360 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
EGF1B | onsemi / Fairchild | Rectifiers 1.0a Rectifier UF Recovery | auf Bestellung 13849 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1B | onsemi | Description: DIODE GEN PURP 100V 1A DO214AC | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1B | ONSEMI | Description: ONSEMI - EGF1B - MISCELLANEOUS MOSFETS tariffCode: 85411000 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2424 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
EGF1B-1HE3/5CA | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1B-1HE3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1B-1HE3_A/H | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1B-1HE3_A/I | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1B-1HE3_B/H | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1B-1HE3_B/I | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1B-E3/5CA | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1B-E3/5CA | Vishay General Semiconductor | Rectifiers 100 Volt 1.0A 50ns Glass Passivated | auf Bestellung 2650 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1B-E3/5CA | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1B-E3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1B-E3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1B-E3/67A | Vishay General Semiconductor | Rectifiers 1.0 Amp 100V 50ns | auf Bestellung 12436 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1BHE3/5CA | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1BHE3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1BHE3_A/H | Vishay General Semiconductor | Rectifiers 1A,100V,50NS AEC-Q101 Qualified | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1BHE3_A/H | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1BHE3_A/I | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1BHE3_A/I | Vishay General Semiconductor | Rectifiers 1A,100V,50NS AEC-Q101 Qualified | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1BHE3_B/H | Vishay General Semiconductor | Rectifiers 100V 30Amp AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1BHE3_B/I | Vishay General Semiconductor | Rectifiers 100V 30Amp AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1C | onsemi | Description: DIODE GEN PURP 150V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1C | ONSEMI | Description: ONSEMI - EGF1C - MISCELLANEOUS MOSFETS tariffCode: 85411000 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
EGF1C | onsemi / Fairchild | Rectifiers 1.0a Rectifier UF Recovery | auf Bestellung 6880 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1C | onsemi | Description: DIODE GEN PURP 150V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V | auf Bestellung 7444 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1C-E3/5CA | Vishay General Semiconductor | Rectifiers 150 Volt 1.0A 50ns Glass Passivated | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1C-E3/5CA | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 150V 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1C-E3/67A | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 150V 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1CHE3/5CA | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 150V 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1CHE3/67A | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 150V 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1CHE3_A/H | Vishay Semiconductors | Rectifiers 1A,150V,50NS AEC-Q101 Qualified | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1CHE3_A/I | Vishay Semiconductors | Rectifiers 1A,150V,50NS AEC-Q101 Qualified | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1D | onsemi / Fairchild | Rectifiers 1.0a Rectifier UF Recovery | auf Bestellung 14815 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1D | ONSEMI | Description: ONSEMI - EGF1D - MISCELLANEOUS MOSFETS tariffCode: 85411000 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 7150 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
EGF1D | onsemi | Description: DIODE GEN PURP 200V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V | auf Bestellung 7305 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1D | ON Semiconductor | Rectifier Diode Switching 200V 1A 50ns 2-Pin SMA T/R | auf Bestellung 6250 Stücke: Lieferzeit 14-21 Tag (e) |
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EGF1D Produktcode: 175898 | Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden | Produkt ist nicht verfügbar | ||||||||||||||||||
EGF1D | ONSEMI | Description: ONSEMI - EGF1D - Diode mit kurzer/ultrakurzer Erholzeit, 200 V, 1 A, Einfach, 1 V, 50 ns, 30 A tariffCode: 85411000 Bauform - Diode: DO-214AC (SMA) Durchlassstoßstrom: 30A rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: 0 Qualifikation: 0 Durchlassspannung, max.: 0 Sperrverzögerungszeit: 50ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 1A euEccn: NLR Wiederkehrende Spitzensperrspannung: 200V Anzahl der Pins: 0 Produktpalette: EGF1D productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 0 SVHC: Lead (23-Jan-2024) | auf Bestellung 27817 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
EGF1D | ONSEMI | Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SMA; Ufmax: 1V; Ifsm: 30A; 2W Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 15pF Case: SMA Max. forward voltage: 1V Max. forward impulse current: 30A Leakage current: 0.1mA Power dissipation: 2W Kind of package: reel; tape | auf Bestellung 5961 Stücke: Lieferzeit 14-21 Tag (e) |
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EGF1D | onsemi | Description: DIODE GEN PURP 200V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1D | ON Semiconductor | Rectifier Diode Switching 200V 1A 50ns 2-Pin SMA T/R | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1D | ON Semiconductor | Rectifier Diode Switching 200V 1A 50ns 2-Pin SMA T/R | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1D | ONSEMI | Description: ONSEMI - EGF1D - Diode mit kurzer/ultrakurzer Erholzeit, 200 V, 1 A, Einfach, 1 V, 50 ns, 30 A tariffCode: 85411000 Bauform - Diode: DO-214AC (SMA) Durchlassstoßstrom: 30A rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: 0 Qualifikation: 0 Durchlassspannung, max.: 0 Sperrverzögerungszeit: 50ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 1A euEccn: NLR Wiederkehrende Spitzensperrspannung: 200V Anzahl der Pins: 0 Produktpalette: EGF1D productTraceability: No Betriebstemperatur, max.: 0 SVHC: Lead (23-Jan-2024) | auf Bestellung 27817 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
EGF1D | Fairchild Semiconductor | Description: RECTIFIER DIODE, 1A, 200V, DO-21 Packaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1D | ONSEMI | Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SMA; Ufmax: 1V; Ifsm: 30A; 2W Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 15pF Case: SMA Max. forward voltage: 1V Max. forward impulse current: 30A Leakage current: 0.1mA Power dissipation: 2W Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke | auf Bestellung 5961 Stücke: Lieferzeit 7-14 Tag (e) |
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EGF1D DO214 | GS | auf Bestellung 2300 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
EGF1D DO214AC-ED | GS | auf Bestellung 78000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
EGF1D DO214 | GS | auf Bestellung 2820 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
EGF1D DO214AC-ED | GS | auf Bestellung 130000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
EGF1D-2HE3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1D-2HE3_A/H | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1D-2HE3_B/H | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1D-E3/5CA | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | auf Bestellung 6500 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1D-E3/5CA | Vishay | Diode Switching 200V 1A 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1D-E3/5CA | Vishay | Diode Switching 200V 1A 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1D-E3/5CA | Vishay General Semiconductor | Rectifiers 200 Volt 1.0A 50ns Glass Passivated | auf Bestellung 8055 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1D-E3/5CA | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO214BA Packaging: Cut Tape (CT) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | auf Bestellung 6500 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1D-E3/5CA | Vishay | Diode Switching 200V 1A 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1D-E3/5CA Produktcode: 180469 | Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden | Produkt ist nicht verfügbar | ||||||||||||||||||
EGF1D-E3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO214BA Packaging: Cut Tape (CT) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | auf Bestellung 8407 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1D-E3/67A | VISHAY | Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 50ns; DO214BA; Ufmax: 1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 15pF Case: DO214BA Max. forward voltage: 1V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1D-E3/67A | Vishay | Rectifier Diode Switching 200V 1A 50ns 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1D-E3/67A | Vishay General Semiconductor | Rectifiers 1.0 Amp 200V 50ns | auf Bestellung 9839 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1D-E3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1D-E3/67A | Vishay | Rectifier Diode Switching 200V 1A 50ns 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1D-E3/67A | VISHAY | Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 50ns; DO214BA; Ufmax: 1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 15pF Case: DO214BA Max. forward voltage: 1V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1D-E3/67A | Vishay | Rectifier Diode Switching 200V 1A 50ns 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1DDO214- | GS | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
EGF1DDO214AC-ED | GS | auf Bestellung 65000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
EGF1DHE3/5CA | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1DHE3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1DHE3/67A | Vishay | Diode Switching 200V 1A Automotive 2-Pin DO-214BA T/R | auf Bestellung 3861 Stücke: Lieferzeit 14-21 Tag (e) |
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EGF1DHE3/67A | Vishay | Diode Switching 200V 1A Automotive 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1DHE3_A/H | Vishay General Semiconductor | Rectifiers 1A,200V,50NS AEC-Q101 Qualified | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1DHE3_A/H | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1DHE3_A/I | Vishay General Semiconductor | Rectifiers 1A,200V,50NS AEC-Q101 Qualified | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1DHE3_A/I | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1DHE3_B/H | Vishay General Semiconductor | Rectifiers 200V 30Amp AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1DHE3_B/I | Vishay General Semiconductor | Rectifiers 200V 30Amp AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1T | VISHAY | 10+ SOP32 | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
EGF1T-E3/5CA | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1.3KV 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1T-E3/5CA | Vishay General Semiconductor | Rectifiers 1300 Volt 1.0A 75ns Glass Passivated | auf Bestellung 12950 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1T-E3/5CA | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1.3KV 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1T-E3/5CA | Vishay | Diode Switching 1.3KV 1A 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1T-E3/67A | VISHAY | Description: VISHAY - EGF1T-E3/67A - Diode mit kurzer/ultrakurzer Erholzeit, 1.3 kV, 1 A, Einfach, 3 V, 75 ns, 20 A tariffCode: 85411000 Bauform - Diode: DO-214BA Durchlassstoßstrom: 20A rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: 0 Qualifikation: 0 Durchlassspannung, max.: 3V Sperrverzögerungszeit: 75ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 1A euEccn: NLR Wiederkehrende Spitzensperrspannung: 1.3kV Anzahl der Pins: 0 Produktpalette: EGF1T productTraceability: No Betriebstemperatur, max.: 0 SVHC: Lead (14-Jun-2023) | auf Bestellung 6446 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
EGF1T-E3/67A | Vishay | Diode Switching 1.3KV 1A 2-Pin DO-214BA T/R | auf Bestellung 4500 Stücke: Lieferzeit 14-21 Tag (e) |
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EGF1T-E3/67A | Vishay | Diode Switching 1.3KV 1A 2-Pin DO-214BA T/R | auf Bestellung 3376 Stücke: Lieferzeit 14-21 Tag (e) |
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EGF1T-E3/67A | Vishay | Rectifier Diode Switching 1.3KV 75ns 2-Pin DO-214BA T/R | auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
EGF1T-E3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1.3KV 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1300 V | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1T-E3/67A | Vishay | Diode Switching 1.3KV 1A 2-Pin DO-214BA T/R | auf Bestellung 1309500 Stücke: Lieferzeit 14-21 Tag (e) |
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EGF1T-E3/67A | VISHAY | Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.3kV; 1A; 75ns; DO214BA; Ufmax: 3V; Ifsm: 20A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.3kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: DO214BA Max. forward voltage: 3V Max. forward impulse current: 20A Leakage current: 50µA Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke | auf Bestellung 1468 Stücke: Lieferzeit 7-14 Tag (e) |
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EGF1T-E3/67A | Vishay | Diode Switching 1.3KV 1A 2-Pin DO-214BA T/R | auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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EGF1T-E3/67A | Vishay | Diode Switching 1.3KV 1A 2-Pin DO-214BA T/R | auf Bestellung 1309500 Stücke: Lieferzeit 14-21 Tag (e) |
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EGF1T-E3/67A | Vishay | Diode Switching 1.3KV 1A 2-Pin DO-214BA T/R | auf Bestellung 4500 Stücke: Lieferzeit 14-21 Tag (e) |
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EGF1T-E3/67A | Vishay | Diode Switching 1.3KV 1A 2-Pin DO-214BA T/R | auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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EGF1T-E3/67A | Vishay | Diode Switching 1.3KV 1A 2-Pin DO-214BA T/R | auf Bestellung 3376 Stücke: Lieferzeit 14-21 Tag (e) |
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EGF1T-E3/67A | VISHAY | Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.3kV; 1A; 75ns; DO214BA; Ufmax: 3V; Ifsm: 20A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.3kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: DO214BA Max. forward voltage: 3V Max. forward impulse current: 20A Leakage current: 50µA Kind of package: reel; tape | auf Bestellung 1468 Stücke: Lieferzeit 14-21 Tag (e) |
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EGF1T-E3/67A | Vishay General Semiconductor | Rectifiers 1.0 Amp 1300 Volt | auf Bestellung 50925 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1T-E3/67A | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1.3KV 1A DO214BA Packaging: Cut Tape (CT) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1300 V | auf Bestellung 4909 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1T-E3/67A | Vishay Semiconductors | DO-214 | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
EGF1T-E3/67A | Vishay | Diode Switching 1.3KV 1A 2-Pin DO-214BA T/R | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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EGF1THE3/5CA | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 1.3KV 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1THE3/5CA | Vishay | Diode Switching 1.3KV 1A Automotive 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1THE3/5CA | Vishay Semiconductors | Rectifiers 1300 Volt 1.0A 75ns Glass Passivated | auf Bestellung 18735 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
EGF1THE3/5CA | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 1.3KV 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1THE3/5CA | Vishay | Diode Switching 1.3KV 1A Automotive 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1THE3/5CA | Vishay | Diode Switching 1.3KV 1A Automotive 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1THE3/67A | Vishay Semiconductors | Rectifiers 1300 Volt 1.0A 75ns Glass Passivated | auf Bestellung 4115 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
EGF1THE3/67A | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 1.3KV 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1THE3/67A | VISHAY | EGF1THE3/67A SMD universal diodes | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1THE3/67A | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 1.3KV 1A DO214BA | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1THE3/67A | Vishay | Diode Switching 1.3KV 1A Automotive 2-Pin DO-214BA T/R | Produkt ist nicht verfügbar | |||||||||||||||||
EGF1THE3_A/H | Vishay General Semiconductor | Rectifiers 1300V 20Amp AEC-Q101 | auf Bestellung 21957 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1THE3_A/I | Vishay General Semiconductor | Rectifiers 1300V 20Amp AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
EGF227M1JG20RRSHP | SAMXON | Category: THT electrolytic capacitors Description: Capacitor: electrolytic; low ESR; THT; 220uF; 63VDC; Ø10x20mm; ±20% Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: THT Capacitance: 220µF Operating voltage: 63V DC Body dimensions: Ø10x20mm Terminal pitch: 5mm Tolerance: ±20% Service life: 3000h Impedance: 168mΩ Operating temperature: -40...105°C Anzahl je Verpackung: 1 Stücke | auf Bestellung 368 Stücke: Lieferzeit 7-14 Tag (e) |
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EGF227M1JG20RRSHP | SAMXON | Category: THT electrolytic capacitors Description: Capacitor: electrolytic; low ESR; THT; 220uF; 63VDC; Ø10x20mm; ±20% Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: THT Capacitance: 220µF Operating voltage: 63V DC Body dimensions: Ø10x20mm Terminal pitch: 5mm Tolerance: ±20% Service life: 3000h Impedance: 168mΩ Operating temperature: -40...105°C | auf Bestellung 368 Stücke: Lieferzeit 14-21 Tag (e) |
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EGF228M1CI20RRSMP | SAMXON | Category: THT electrolytic capacitors Description: Capacitor: electrolytic; low ESR; THT; 2200uF; 16VDC; Ø12.5x20mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: THT Capacitance: 2.2mF Operating voltage: 16V DC Body dimensions: Ø12.5x20mm Terminal pitch: 5mm Tolerance: ±20% Service life: 4000h Impedance: 35mΩ Operating temperature: -40...105°C Anzahl je Verpackung: 10 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
EGF228M1CI20RRSMP | Samxon | Конденсатор електролітичний радіальний; С = 2 200 мкФ; U, В = 16; Розм = 12,5 x 20 мм; Точн., % = 20; R, Ом = 35; Крок, мм = 5; Тексп, °C = -40...+105; Термін експл., г @ T,°C = 4000; 12,5x20mm | auf Bestellung 8528 Stücke: Lieferzeit 14-21 Tag (e) |
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EGF228M1CI20RRSMP | SAMXON | Category: THT electrolytic capacitors Description: Capacitor: electrolytic; low ESR; THT; 2200uF; 16VDC; Ø12.5x20mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: THT Capacitance: 2.2mF Operating voltage: 16V DC Body dimensions: Ø12.5x20mm Terminal pitch: 5mm Tolerance: ±20% Service life: 4000h Impedance: 35mΩ Operating temperature: -40...105°C | Produkt ist nicht verfügbar | |||||||||||||||||
EGF467 | N/A | 06+ | auf Bestellung 56 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
EGF477M1EG16RRSHP | SAMXON | Category: THT electrolytic capacitors Description: Capacitor: electrolytic; low ESR; THT; 470uF; 25VDC; Ø10x16mm; ±20% Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: THT Capacitance: 470µF Operating voltage: 25V DC Body dimensions: Ø10x16mm Terminal pitch: 5mm Tolerance: ±20% Service life: 3000h Impedance: 80mΩ Operating temperature: -40...105°C Anzahl je Verpackung: 10 Stücke | auf Bestellung 2990 Stücke: Lieferzeit 7-14 Tag (e) |
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EGF477M1EG16RRSHP | SAMXON | Category: THT electrolytic capacitors Description: Capacitor: electrolytic; low ESR; THT; 470uF; 25VDC; Ø10x16mm; ±20% Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: THT Capacitance: 470µF Operating voltage: 25V DC Body dimensions: Ø10x16mm Terminal pitch: 5mm Tolerance: ±20% Service life: 3000h Impedance: 80mΩ Operating temperature: -40...105°C | auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
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EGF478M1EK30RRS0P | SAMXON | Category: THT electrolytic capacitors Description: Capacitor: electrolytic; low ESR; THT; 4700uF; 25VDC; Ø16x30mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: THT Capacitance: 4.7mF Operating voltage: 25V DC Body dimensions: Ø16x30mm Terminal pitch: 7.5mm Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Anzahl je Verpackung: 1 Stücke | auf Bestellung 2814 Stücke: Lieferzeit 7-14 Tag (e) |
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EGF478M1EK30RRS0P | SAMXON | Category: THT electrolytic capacitors Description: Capacitor: electrolytic; low ESR; THT; 4700uF; 25VDC; Ø16x30mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: THT Capacitance: 4.7mF Operating voltage: 25V DC Body dimensions: Ø16x30mm Terminal pitch: 7.5mm Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C | auf Bestellung 2814 Stücke: Lieferzeit 14-21 Tag (e) |
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EGF989 | N/A | 06+ | auf Bestellung 1970 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
EGFM-08 T SL | IGUS | Category: Plain Bearings Description: Bearing: joint; with flange; Øout: 15.8÷16.5mm; Øint: 8mm; -30÷80°C Manufacturer series: igubal® Operating temperature: -30...80°C Material: iglidur® J Internal diameter: 8mm Version: with flange Type of bearing: joint Enclosure material: igumid G Mechanical elements features: lubricant-free Height: 6mm Static load: 75...550N Outside diameter: 15.8...16.5mm Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
EGFM-08 T SL | IGUS | Category: Plain Bearings Description: Bearing: joint; with flange; Øout: 15.8÷16.5mm; Øint: 8mm; -30÷80°C Manufacturer series: igubal® Operating temperature: -30...80°C Material: iglidur® J Internal diameter: 8mm Version: with flange Type of bearing: joint Enclosure material: igumid G Mechanical elements features: lubricant-free Height: 6mm Static load: 75...550N Outside diameter: 15.8...16.5mm | Produkt ist nicht verfügbar | |||||||||||||||||
EGFM-10 T | IGUS | EGFM-10-T Plain Bearings | auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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EGFM-12 T | IGUS | Category: Plain Bearings Description: Bearing: joint; with flange; Øout: 22.8÷23.6mm; Øint: 12mm; igubal® Type of bearing: joint Version: with flange Outside diameter: 22.8...23.6mm Internal diameter: 12mm Material: iglidur® W300 Mechanical elements features: lubricant-free Operating temperature: -30...80°C Manufacturer series: igubal® Height: 10mm Enclosure material: igumid G Static load: 135...1250N | Produkt ist nicht verfügbar | |||||||||||||||||
EGFM-12 T | IGUS | Category: Plain Bearings Description: Bearing: joint; with flange; Øout: 22.8÷23.6mm; Øint: 12mm; igubal® Type of bearing: joint Version: with flange Outside diameter: 22.8...23.6mm Internal diameter: 12mm Material: iglidur® W300 Mechanical elements features: lubricant-free Operating temperature: -30...80°C Manufacturer series: igubal® Height: 10mm Enclosure material: igumid G Static load: 135...1250N Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
EGFM-16 T | IGUS | EGFM-16-T Plain Bearings | Produkt ist nicht verfügbar | |||||||||||||||||
EGFM-20 T | IGUS | EGFM-20-T Plain Bearings | Produkt ist nicht verfügbar | |||||||||||||||||
EGFM-25 T | IGUS | EGFM-25-T Plain Bearings | Produkt ist nicht verfügbar | |||||||||||||||||
EGFM-30 T | IGUS | EGFM-30-T Plain Bearings | Produkt ist nicht verfügbar |