Produkte > DI2
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||
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DI200N04D2 | DIOTEC SEMICONDUCTOR | DI200N04D2-DIO SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
DI200N04PQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 5x6, 40V, 200A, 150C, N | auf Bestellung 4985 Stücke: Lieferzeit 10-14 Tag (e) |
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DI200N10D2 | DIOTEC SEMICONDUCTOR | DI200N10D2-DIO SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
DI200S_R2_00001 | Panjit | Bridge Rectifiers PEC/DI200S/TR/13"/HF/1.5K/SDIP/GPP/BRIDGE/LGDI-20SH/DI20S-QI02/PJ/// | Produkt ist nicht verfügbar | |||||||||||||||||
DI200S_T0_00001 | Panjit | Bridge Rectifiers PEC/DI200S/TP//HF/0.05K/SDIP/GPP/BRIDGE/LGDI-20SH/DI20S-QI02/PJ/// | Produkt ist nicht verfügbar | |||||||||||||||||
DI2010S_R2_00001 | Panjit | Bridge Rectifiers PEC/DI2010S/TR/13"/HF/1.5K/SDIP/GPP/BRIDGE/LGDI-20SH/DI20S-QI02/PJ/// | auf Bestellung 950 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DI2010S_T0_00001 | Panjit | Bridge Rectifiers PEC/DI2010S/TP//HF/0.05K/SDIP/GPP/BRIDGE/LGDI-20SH/DI20S-QI02/PJ/// | Produkt ist nicht verfügbar | |||||||||||||||||
DI201S_R2_00001 | Panjit | Bridge Rectifiers PEC/DI201S/TR/13"/HF/1.5K/SDIP/GPP/BRIDGE/LGDI-20SH/DI20S-QI02/PJ/// | Produkt ist nicht verfügbar | |||||||||||||||||
DI201S_T0_00001 | Panjit | Bridge Rectifiers PEC/DI201S/TP//HF/0.05K/SDIP/GPP/BRIDGE/LGDI-20SH/DI20S-QI02/PJ/// | Produkt ist nicht verfügbar | |||||||||||||||||
DI202S_R2_00001 | Panjit | Bridge Rectifiers PEC/DI202S/TR/13"/HF/1.5K/SDIP/GPP/BRIDGE/LGDI-20SH/DI20S-QI02/PJ/// | Produkt ist nicht verfügbar | |||||||||||||||||
DI202S_T0_00001 | Panjit | Bridge Rectifiers PEC/DI202S/TP//HF/0.05K/SDIP/GPP/BRIDGE/LGDI-20SH/DI20S-QI02/PJ/// | Produkt ist nicht verfügbar | |||||||||||||||||
DI204S_R2_00001 | Panjit | Bridge Rectifiers PEC/DI204S/TR/13"/HF/1.5K/SDIP/GPP/BRIDGE/LGDI-20SH/DI20S-QI02/PJ/// | Produkt ist nicht verfügbar | |||||||||||||||||
DI204S_T0_00001 | Panjit | Bridge Rectifiers PEC/DI204S/TP//HF/0.05K/SDIP/GPP/BRIDGE/LGDI-20SH/DI20S-QI02/PJ/// | Produkt ist nicht verfügbar | |||||||||||||||||
DI206S_R2_00001 | Panjit | Bridge Rectifiers PEC/DI206S/TR/13"/HF/1.5K/SDIP/GPP/BRIDGE/LGDI-20SH/DI20S-QI02/PJ/// | Produkt ist nicht verfügbar | |||||||||||||||||
DI206S_T0_00001 | Panjit | Bridge Rectifiers PEC/DI206S/TP//HF/0.05K/SDIP/GPP/BRIDGE/LGDI-20SH/DI20S-QI02/PJ/// | Produkt ist nicht verfügbar | |||||||||||||||||
DI208S-R2-00001 | Panjit | Bridge Rectifiers | Produkt ist nicht verfügbar | |||||||||||||||||
DI208S_R2_00001 | Panjit | Bridge Rectifiers DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE SURFACE MOUNT BRIDGE RECTIFIER | Produkt ist nicht verfügbar | |||||||||||||||||
DI208S_T0_00001 | Panjit | Bridge Rectifiers PEC/DI208S/TP//HF/0.05K/SDIP/GPP/BRIDGE/LGDI-20SH/DI20S-QI02/PJ/// | Produkt ist nicht verfügbar | |||||||||||||||||
DI2220V301R-00 | Laird-Signal Integrity Products | Description: FIXED IND 300NH 8A 10 MOHM SMD Tolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: Nonstandard Size / Dimension: 0.220" L x 0.200" W (5.59mm x 5.08mm) Mounting Type: Surface Mount Shielding: Unshielded Type: Drum Core, Wirewound Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 10mOhm Max Material - Core: Ferrite Inductance Frequency - Test: 25 MHz Height - Seated (Max): 0.142" (3.60mm) Inductance: 300 nH Current Rating (Amps): 8 A | Produkt ist nicht verfügbar | |||||||||||||||||
DI2220V301R-00 | Laird-Signal Integrity Products | Description: FIXED IND 300NH 8A 10 MOHM SMD Tolerance: ±10% Packaging: Cut Tape (CT) Package / Case: Nonstandard Size / Dimension: 0.220" L x 0.200" W (5.59mm x 5.08mm) Mounting Type: Surface Mount Shielding: Unshielded Type: Drum Core, Wirewound Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 10mOhm Max Material - Core: Ferrite Inductance Frequency - Test: 25 MHz Height - Seated (Max): 0.142" (3.60mm) Inductance: 300 nH Current Rating (Amps): 8 A | Produkt ist nicht verfügbar | |||||||||||||||||
DI2220V301R-10 | Laird-Signal Integrity Products | Description: FIXED IND 300NH 8A 10 MOHM SMD Tolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: 2220 (5650 Metric) Size / Dimension: 0.220" L x 0.200" W (5.59mm x 5.08mm) Mounting Type: Surface Mount Shielding: Unshielded Type: Drum Core, Wirewound Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 10mOhm Max Material - Core: Ferrite Inductance Frequency - Test: 25 MHz Height - Seated (Max): 0.152" (3.86mm) Part Status: Active Inductance: 300 nH Current Rating (Amps): 8 A | auf Bestellung 14000 Stücke: Lieferzeit 10-14 Tag (e) |
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DI2220V301R-10 | LAIRD | Inductor Power Shielded Wirewound 0.3uH 10% 2MHz 8A 0.01Ohm DCR 2220 Automotive T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DI2220V301R-10 | Steward | 09+ SMD | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
DI2220V301R-10 | Laird-Signal Integrity Products | Description: FIXED IND 300NH 8A 10 MOHM SMD Tolerance: ±10% Packaging: Cut Tape (CT) Package / Case: 2220 (5650 Metric) Size / Dimension: 0.220" L x 0.200" W (5.59mm x 5.08mm) Mounting Type: Surface Mount Shielding: Unshielded Type: Drum Core, Wirewound Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 10mOhm Max Material - Core: Ferrite Inductance Frequency - Test: 25 MHz Height - Seated (Max): 0.152" (3.86mm) Part Status: Active Inductance: 300 nH Current Rating (Amps): 8 A | auf Bestellung 15615 Stücke: Lieferzeit 10-14 Tag (e) |
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DI2220V301R-10 | Laird Performance Materials | Power Inductors - SMD 300nH @ 8000 mA Monolithic 2220 | auf Bestellung 5626 Stücke: Lieferzeit 10-14 Tag (e) |
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DI225M | N/A | auf Bestellung 394 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
DI2579N | Diotec Semiconductor | Description: IC Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 350mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 350mA, 5V Supplier Device Package: SOT-223 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 1.25 W | Produkt ist nicht verfügbar | |||||||||||||||||
DI2579N | DIOTEC SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 700V; 1A; 1.25W; SOT223 Polarisation: bipolar Collector-emitter voltage: 700V Current gain: 15...30 Collector current: 1A Type of transistor: NPN Power dissipation: 1.25W Kind of package: reel; tape Mounting: SMD Case: SOT223 | auf Bestellung 3275 Stücke: Lieferzeit 14-21 Tag (e) |
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DI2579N | Diotec Semiconductor | Trans GP BJT NPN 400V 1A 1250mW 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DI2579N | Diotec Semiconductor | Description: TRANS NPN 400V 1A SOT223 Packaging: Strip Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 350mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 350mA, 5V Supplier Device Package: SOT-223 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 1.25 W | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DI2579N | Diotec Semiconductor | Bipolar Transistors - BJT BJT, SOT-223, 700V, 1000mA, NPN | auf Bestellung 3516 Stücke: Lieferzeit 10-14 Tag (e) |
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DI2579N | DIOTEC SEMICONDUCTOR | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 700V; 1A; 1.25W; SOT223 Polarisation: bipolar Collector-emitter voltage: 700V Current gain: 15...30 Collector current: 1A Type of transistor: NPN Power dissipation: 1.25W Kind of package: reel; tape Mounting: SMD Case: SOT223 Anzahl je Verpackung: 5 Stücke | auf Bestellung 3275 Stücke: Lieferzeit 7-14 Tag (e) |
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DI2579N | Diotec Semiconductor | Trans GP BJT NPN 400V 1A 1250mW 4-Pin(3+Tab) SOT-223 T/R | auf Bestellung 3275 Stücke: Lieferzeit 14-21 Tag (e) |
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DI280N10TL | Diotec Semiconductor | MOSFET, TOLL, 100V, 280A, 150C, N | Produkt ist nicht verfügbar | |||||||||||||||||
DI280N10TL | Diotec Semiconductor | MOSFETs MOSFET, TOLL, 100V, 280A, 175C, N | auf Bestellung 1779 Stücke: Lieferzeit 10-14 Tag (e) |
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DI280N10TL | Diotec Semiconductor | Description: MOSFET TOLL N 100V 0.002OHM 175C Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 280A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Power Dissipation (Max): 425mW (Tc) Vgs(th) (Max) @ Id: 4.2V @ 250µA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 50 V | auf Bestellung 1926 Stücke: Lieferzeit 10-14 Tag (e) |
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DI280N10TL | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 194A; Idm: 1.2kA; 425W; HSOF-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 194A Pulsed drain current: 1.2kA Power dissipation: 425W Case: HSOF-8 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DI280N10TL | Diotec Semiconductor | Description: MOSFET TOLL N 100V 0.002OHM 175C Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 280A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Power Dissipation (Max): 425mW (Tc) Vgs(th) (Max) @ Id: 4.2V @ 250µA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
DI280N10TL | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 194A; Idm: 1.2kA; 425W; HSOF-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 194A Pulsed drain current: 1.2kA Power dissipation: 425W Case: HSOF-8 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
DI2A2N100D1K-AQ | Diotec Semiconductor | N-Channel Power MOSFETN-Kanal Leistungs-MOSFETAEC-Q101 qualification | Produkt ist nicht verfügbar | |||||||||||||||||
DI2A7N70D1K | Diotec Semiconductor | MOSFET MOSFET, DPAK, 700V, 2.7A, 150C, N | auf Bestellung 2370 Stücke: Lieferzeit 10-14 Tag (e) |
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DI2A7N70D1K | Diotec Semiconductor AG | Description: MOSFET, DPAK, N, 700V, 2.7A Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V Power Dissipation (Max): 34.4W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 350 V | Produkt ist nicht verfügbar | |||||||||||||||||
DI2A7N70D1K | DIOTEC SEMICONDUCTOR | DI2A7N70D1K-DIO SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
DI2A8N03PWK2 | DIOTEC SEMICONDUCTOR | DI2A8N03PWK2-DIO Multi channel transistors | Produkt ist nicht verfügbar |