Produkte > BSB
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||
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BSB 20 BL | HIRSCHMANN T&M | Category: 4mm Banana Plugs Description: Plug; 4mm banana; 30A; 33VAC; 60VDC; blue; 3mΩ; 2.5mm2; screw type Connector: plug Type of connector: 4mm banana Rated voltage: 33V AC; 60V DC Current rating: 30A Connector variant: non-insulated; with 4mm socket Contact plating: nickel plated Engineering PN: 930729102 Contact material: brass Max cable section: 2.5mm2 Max. contact resistance:: 3mΩ Mounting: screw type Colour: blue | auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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BSB 20 BL | HIRSCHMANN T&M | Category: 4mm Banana Plugs Description: Plug; 4mm banana; 30A; 33VAC; 60VDC; blue; 3mΩ; 2.5mm2; screw type Connector: plug Type of connector: 4mm banana Rated voltage: 33V AC; 60V DC Current rating: 30A Connector variant: non-insulated; with 4mm socket Contact plating: nickel plated Engineering PN: 930729102 Contact material: brass Max cable section: 2.5mm2 Max. contact resistance:: 3mΩ Mounting: screw type Colour: blue Anzahl je Verpackung: 1 Stücke | auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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BSB 20 GE | HIRSCHMANN T&M | Category: 4mm Banana Plugs Description: Plug; 4mm banana; 30A; 33VAC; 60VDC; yellow; 3mΩ; 2.5mm2; screw type Connector: plug Type of connector: 4mm banana Current rating: 30A Rated voltage: 33V AC; 60V DC Colour: yellow Connector variant: non-insulated; with 4mm socket Max. contact resistance:: 3mΩ Max cable section: 2.5mm2 Contact plating: nickel plated Contact material: brass Mounting: screw type Engineering PN: 930729103 | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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BSB 20 GE | HIRSCHMANN T&M | Category: 4mm Banana Plugs Description: Plug; 4mm banana; 30A; 33VAC; 60VDC; yellow; 3mΩ; 2.5mm2; screw type Connector: plug Type of connector: 4mm banana Current rating: 30A Rated voltage: 33V AC; 60V DC Colour: yellow Connector variant: non-insulated; with 4mm socket Max. contact resistance:: 3mΩ Max cable section: 2.5mm2 Contact plating: nickel plated Contact material: brass Mounting: screw type Engineering PN: 930729103 Anzahl je Verpackung: 1 Stücke | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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BSB 20 K BLACK | SKS Kontakttechnik | Conn Banana Plug PL 1 POS Screw ST Cable Mount 1 Port | auf Bestellung 480 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BSB 20 K BLUE | SKS Kontakttechnik | Conn Banana Plug PL 1 POS Screw ST Cable Mount 1 Port | Produkt ist nicht verfügbar | |||||||||||||||||
BSB 20 K GREEN | SKS Kontakttechnik | Conn Banana Plug PL 1 POS Screw ST Cable Mount 1 Port | auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BSB 20 K RED | SKS Kontakttechnik | Conn Banana PL 1 POS Screw ST Cable Mount 1 Port | auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BSB 20 K RT | HIRSCHMANN T&M | Category: 4mm Banana Plugs Description: Connector: 4mm banana; plug; 30A; 33VAC; 60VDC; red; 3mΩ; 2.5mm2 Mounting: screw type Engineering PN: 930729101 Contact material: brass Max cable section: 2.5mm2 Connector variant: non-insulated; with 4mm socket Colour: red Type of connector: 4mm banana Connector: plug Contact plating: nickel plated Rated voltage: 33V AC; 60V DC Max. contact resistance:: 3mΩ Current rating: 30A | auf Bestellung 1299 Stücke: Lieferzeit 14-21 Tag (e) |
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BSB 20 K RT | HIRSCHMANN T&M | Category: 4mm Banana Plugs Description: Connector: 4mm banana; plug; 30A; 33VAC; 60VDC; red; 3mΩ; 2.5mm2 Mounting: screw type Engineering PN: 930729101 Contact material: brass Max cable section: 2.5mm2 Connector variant: non-insulated; with 4mm socket Colour: red Type of connector: 4mm banana Connector: plug Contact plating: nickel plated Rated voltage: 33V AC; 60V DC Max. contact resistance:: 3mΩ Current rating: 30A Anzahl je Verpackung: 1 Stücke | auf Bestellung 1299 Stücke: Lieferzeit 7-14 Tag (e) |
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BSB 20 K SW | HIRSCHMANN T&M | Category: 4mm Banana Plugs Description: Connector: 4mm banana; plug; 30A; 33VAC; 60VDC; black; 3mΩ; 2.5mm2 Mounting: screw type Engineering PN: 930729100 Contact material: brass Max cable section: 2.5mm2 Connector variant: non-insulated; with 4mm socket Colour: black Type of connector: 4mm banana Connector: plug Contact plating: nickel plated Rated voltage: 33V AC; 60V DC Max. contact resistance:: 3mΩ Current rating: 30A | auf Bestellung 1565 Stücke: Lieferzeit 14-21 Tag (e) |
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BSB 20 K SW | HIRSCHMANN T&M | Category: 4mm Banana Plugs Description: Connector: 4mm banana; plug; 30A; 33VAC; 60VDC; black; 3mΩ; 2.5mm2 Mounting: screw type Engineering PN: 930729100 Contact material: brass Max cable section: 2.5mm2 Connector variant: non-insulated; with 4mm socket Colour: black Type of connector: 4mm banana Connector: plug Contact plating: nickel plated Rated voltage: 33V AC; 60V DC Max. contact resistance:: 3mΩ Current rating: 30A Anzahl je Verpackung: 1 Stücke | auf Bestellung 1565 Stücke: Lieferzeit 7-14 Tag (e) |
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BSB 20 K YELLOW | SKS Kontakttechnik | Conn Banana Plug PL 1 POS Screw ST Cable Mount 1 Port | auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BSB 300 BLACK | SKS Kontakttechnik | MULTIPLE-SPRING WIRE PLUG WITH COUPLI WAY, THE PLUGS CAN BE CONNECTED TOG TO MAXIMUM CABLE CROSS-SECTION OF 1 | Produkt ist nicht verfügbar | |||||||||||||||||
BSB 300 BLAU / BLUE | SKS Kontakttechnik | 931294102 | Produkt ist nicht verfügbar | |||||||||||||||||
BSB 300 GELB / YELLOW | SKS Kontakttechnik | 931294103 | Produkt ist nicht verfügbar | |||||||||||||||||
BSB 300 GRN / GREEN | SKS Kontakttechnik | 931294104 | Produkt ist nicht verfügbar | |||||||||||||||||
BSB 300 RED | SKS Kontakttechnik | Multiple-Spring Wire Plug With Coupling Located Parallel | Produkt ist nicht verfügbar | |||||||||||||||||
BSB-PIR90-U | Carlo Gavazzi | Optical Sensor Modules SMART-DUPLINE PL PIR DETECTOR 90 LIGHT REV.2 | Produkt ist nicht verfügbar | |||||||||||||||||
BSB008NE2LX | Infineon Technologies | MOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS | auf Bestellung 118 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
BSB008NE2LX | Infineon technologies | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BSB008NE2LXXT | Infineon Technologies | MOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS | Produkt ist nicht verfügbar | |||||||||||||||||
BSB008NE2LXXUMA1 | Infineon Technologies | Description: MOSFET N-CH 25V 46A/180A 2WDSON | Produkt ist nicht verfügbar | |||||||||||||||||
BSB008NE2LXXUMA1 | Infineon Technologies | MOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS | Produkt ist nicht verfügbar | |||||||||||||||||
BSB008NE2LXXUMA1 | Infineon Technologies | Trans MOSFET N-CH 25V 46A 7-Pin WDSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BSB008NE2LXXUMA1 | INFINEON TECHNOLOGIES | BSB008NE2LXXUMA1 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
BSB008NE2LXXUMA1 | Infineon Technologies | Description: MOSFET N-CH 25V 46A/180A 2WDSON | auf Bestellung 123 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB012N03LX3 | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Part Status: Active | auf Bestellung 3581 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB012N03LX3 G | Infineon Technologies | MOSFET N-Ch 30V 180A CanPAK3 MX OptiMOS 3 | Produkt ist nicht verfügbar | |||||||||||||||||
BSB012N03LX3 G | Infineon Technologies | Description: MOSFET N-CH 30V 39A/180A 2WDSON Packaging: Tape & Reel (TR) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
BSB012N03LX3G | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 15 V | auf Bestellung 5508 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB012N03LX3GXUMA1 | Infineon Technologies | Trans MOSFET N-CH 30V 39A 7-Pin WDSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BSB012N03LX3GXUMA1 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - BSB012N03LX3GXUMA1 - BSB012N03 POWER FIELD-EFFECT TRANSISTOR tariffCode: 85412100 euEccn: TBC hazardous: false productTraceability: Yes-Date/Lot Code usEccn: TBC SVHC: No SVHC (27-Jun-2024) | auf Bestellung 3581 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BSB012N03LX3GXUMA1 | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Part Status: Active | auf Bestellung 4398 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB012N03MX3 G | Infineon Technologies | MOSFET N-KANAL POWER MOS | Produkt ist nicht verfügbar | |||||||||||||||||
BSB012N03MX3GXT | Infineon Technologies | MOSFET OptiMOS 3 PWR-MOSFET DUAL SIDE COOLING | Produkt ist nicht verfügbar | |||||||||||||||||
BSB012NE2LX | Infineon Technologies | Description: MOSFET N-CH 25V 37A/170A 2WDSON | Produkt ist nicht verfügbar | |||||||||||||||||
BSB012NE2LX | Infineon Technologies | Description: MOSFET N-CH 25V 37A/170A 2WDSON | Produkt ist nicht verfügbar | |||||||||||||||||
BSB012NE2LXI | Infineon Technologies | MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS | Produkt ist nicht verfügbar | |||||||||||||||||
BSB012NE2LXIXUMA1 | Infineon Technologies | Description: MOSFET N-CH 25V 170A 2WDSON Packaging: Tape & Reel (TR) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5852 pF @ 12 V | Produkt ist nicht verfügbar | |||||||||||||||||
BSB012NE2LXIXUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 57W Case: CanPAK™ M; MG-WDSON-2 Technology: OptiMOS™ Mounting: SMD Drain-source voltage: 25V Drain current: 170A On-state resistance: 1.2mΩ Type of transistor: N-MOSFET Power dissipation: 57W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||||
BSB012NE2LXIXUMA1 | Infineon Technologies | MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS | auf Bestellung 1156 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB012NE2LXIXUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 170A; 57W Case: CanPAK™ M; MG-WDSON-2 Technology: OptiMOS™ Mounting: SMD Drain-source voltage: 25V Drain current: 170A On-state resistance: 1.2mΩ Type of transistor: N-MOSFET Power dissipation: 57W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 5000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
BSB012NE2LXIXUMA1 | Infineon Technologies | Trans MOSFET N-CH 25V 37A 7-Pin WDSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BSB013NE2LXI | Infineon technologies | auf Bestellung 10 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BSB013NE2LXI | Infineon Technologies | MOSFET N-Ch 25V 163A CanPAK-3 MX OptiMOS | auf Bestellung 455 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB013NE2LXIXUMA1 | Infineon Technologies | Description: MOSFET N-CH 25V 36A/163A 2WDSON Packaging: Cut Tape (CT) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V | Produkt ist nicht verfügbar | |||||||||||||||||
BSB013NE2LXIXUMA1 | INFINEON | Description: INFINEON - BSB013NE2LXIXUMA1 - Leistungs-MOSFET, n-Kanal, 25 V, 163 A, 0.0011 ohm, WDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 25V rohsCompliant: YES Dauer-Drainstrom Id: 163A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 3 - 168 Stunden usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 57W Bauform - Transistor: WDSON Anzahl der Pins: 2Pin(s) Produktpalette: OptiMOS productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0011ohm | auf Bestellung 4754 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BSB013NE2LXIXUMA1 | Infineon Technologies | Description: MOSFET N-CH 25V 36A/163A 2WDSON Packaging: Tape & Reel (TR) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V | Produkt ist nicht verfügbar | |||||||||||||||||
BSB013NE2LXIXUMA1 | INFINEON | Description: INFINEON - BSB013NE2LXIXUMA1 - Leistungs-MOSFET, n-Kanal, 25 V, 163 A, 0.0011 ohm, WDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 25V rohsCompliant: YES Dauer-Drainstrom Id: 163A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 3 - 168 Stunden usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 57W Bauform - Transistor: WDSON Anzahl der Pins: 2Pin(s) Produktpalette: OptiMOS productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0011ohm | auf Bestellung 4754 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BSB013NE2LXIXUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W Mounting: SMD Polarisation: unipolar Drain-source voltage: 25V Drain current: 103A On-state resistance: 1.3mΩ Type of transistor: N-MOSFET Power dissipation: 57W Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Case: CanPAK™ MX; MG-WDSON-2 Anzahl je Verpackung: 5000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
BSB013NE2LXIXUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W Mounting: SMD Polarisation: unipolar Drain-source voltage: 25V Drain current: 103A On-state resistance: 1.3mΩ Type of transistor: N-MOSFET Power dissipation: 57W Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Case: CanPAK™ MX; MG-WDSON-2 | Produkt ist nicht verfügbar | |||||||||||||||||
BSB013NE2LXIXUMA1 | Infineon Technologies | Description: MOSFET N-CH 25V 36A/163A 2WDSON Packaging: Bulk Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V | auf Bestellung 18879 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB014N04LX3 G | Infineon Technologies | MOSFET N-Ch 40V 180A CanPAK3 MX OptiMOS 3 | auf Bestellung 1113 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
BSB014N04LX3G | Infineon technologies | auf Bestellung 99 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BSB014N04LX3GXUMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 36A 7-Pin WDSON T/R | auf Bestellung 933 Stücke: Lieferzeit 14-21 Tag (e) |
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BSB014N04LX3GXUMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 36A/180A 2WDSON Packaging: Cut Tape (CT) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
BSB014N04LX3GXUMA1 | Infineon Technologies | MOSFET N-Ch 40V 180A CanPAK3 MX OptiMOS 3 | auf Bestellung 3269 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
BSB014N04LX3GXUMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 36A 7-Pin WDSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BSB014N04LX3GXUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 89W Case: CanPAK™ MX; MG-WDSON-2 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
BSB014N04LX3GXUMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 36A/180A 2WDSON Packaging: Tape & Reel (TR) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
BSB014N04LX3GXUMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 36A 7-Pin WDSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BSB014N04LX3GXUMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 36A 7-Pin WDSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BSB014N04LX3GXUMA1 Produktcode: 168892 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
BSB014N04LX3GXUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 89W Case: CanPAK™ MX; MG-WDSON-2 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
BSB01503HA3-00CGE | Delta Electronics | Description: FAN BLOWER 15X3.5MM 3VDC RECT Features: Locked Rotor Protection, Speed Sensor (Tach) Packaging: Box Voltage - Rated: 3VDC Size / Dimension: Square - 15mm L x 15mm H Bearing Type: Sleeve RPM: 13800 RPM Air Flow: 0.170 CFM (0.005m³/min) Width: 3.50mm Weight: 0.003 lb (1.36 g) Operating Temperature: 14 ~ 140°F (-10 ~ 60°C) Termination: 3 Position Rectangular Connector Fan Type: Blower Noise: 30.0dB(A) Static Pressure: 0.154 in H2O (38.4 Pa) Part Status: Active Power (Watts): 150 mW | auf Bestellung 2885 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB01503HA3-00CGE | Delta Electronics | Blowers & Centrifugal Fans Blower, 15x3mm, 3VDC, Sleeve, 3 Position Connector, Lock Rotor Sensor, Tach | auf Bestellung 97 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB015N04NX3 G | Infineon Technologies | MOSFETs N-Ch 40V 180A CanPAK3 MX OptiMOS 3 | Produkt ist nicht verfügbar | |||||||||||||||||
BSB015N04NX3GXUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 89W Case: CanPAK™ MX; MG-WDSON-2 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
BSB015N04NX3GXUMA1 | Infineon Technologies | BSB015N04NX3GXUMA1 Infineon Technologies AG Transistors MOSFETs N-CH 40V 35A 7-Pin WDSON T/R - Arrow.com | Produkt ist nicht verfügbar | |||||||||||||||||
BSB015N04NX3GXUMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 36A/180A 2WDSON Packaging: Tape & Reel (TR) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
BSB015N04NX3GXUMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 35A 7-Pin WDSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BSB015N04NX3GXUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 89W Case: CanPAK™ MX; MG-WDSON-2 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
BSB015N04NX3GXUMA1 | Infineon Technologies | BSB015N04NX3GXUMA1 Infineon Technologies AG Transistors MOSFETs N-CH 40V 35A 7-Pin WDSON T/R - Arrow.com | auf Bestellung 2645 Stücke: Lieferzeit 14-21 Tag (e) |
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BSB015N04NX3GXUMA1 | Infineon Technologies | Description: MOSFET N-CH 40V 36A/180A 2WDSON Packaging: Cut Tape (CT) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
BSB015N04NX3GXUMA1 | Infineon Technologies | MOSFETs TRENCH <= 40V | Produkt ist nicht verfügbar | |||||||||||||||||
BSB01703HA3-00CAJ | Delta Electronics | DC Fan Axial Sleeve Bearing 3V 2V to 3.5V 0.23CFM 26.5dB 17 X 17 X 3.4mm | Produkt ist nicht verfügbar | |||||||||||||||||
BSB01703HA3-00CAJ | Delta Electronics | Description: FAN BLOWER 17X3.4MM 3VDC RECT Features: Locked Rotor Protection, Speed Sensor (Tach) Packaging: Box Voltage - Rated: 3VDC Size / Dimension: Square - 17mm L x 17mm H Bearing Type: Sleeve RPM: 12000 RPM Air Flow: 0.230 CFM (0.006m³/min) Width: 3.40mm Weight: 0.003 lb (1.36 g) Operating Temperature: 14 ~ 140°F (-10 ~ 60°C) Termination: 3 Position Rectangular Connector Fan Type: Blower Noise: 26.5dB(A) Static Pressure: 0.182 in H2O (45.3 Pa) Power (Watts): 180 mW | auf Bestellung 630 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB01703HA3-00CAJ | Delta Electronics | Blowers & Centrifugal Fans Blower, 17x3mm, 3VDC, Sleeve, 3 Position Connector, Lock Rotor Sensor | auf Bestellung 578 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB017N03LX3 | 09+/10+ | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BSB017N03LX3 Produktcode: 118806 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
BSB017N03LX3 G | Infineon Technologies | Description: MOSFET N-CH 30V 32A/147A 2WDSON Packaging: Tape & Reel (TR) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 147A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
BSB017N03LX3 G | Infineon Technologies | MOSFET N-Ch 30V 147A CanPAK3 MX OptiMOS 3 | Produkt ist nicht verfügbar | |||||||||||||||||
BSB017N03LX3GXUMA1 | Infineon Technologies | Trans MOSFET N-CH 30V 32A 7-Pin WDSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BSB019N03LX G | Infineon Technologies | Description: MOSFET N-CH 30V 32A/174A 2WDSON Packaging: Tape & Reel (TR) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 174A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
BSB0203HA3-00CER | Delta Electronics | Description: FAN BLOWER 20X3.28MM 3VDC RECT Features: Locked Rotor Protection, Speed Sensor (Tach) Packaging: Box Voltage - Rated: 3VDC Size / Dimension: Square - 20mm L x 20mm H Bearing Type: Sleeve RPM: 13000 RPM Air Flow: 0.280 CFM (0.008m³/min) Width: 3.28mm Weight: 0.003 lb (1.36 g) Operating Temperature: 14 ~ 140°F (-10 ~ 60°C) Termination: 3 Position Rectangular Connector Fan Type: Blower Noise: 32.0dB(A) Static Pressure: 0.252 in H2O (62.8 Pa) Part Status: Active Power (Watts): 180 mW | auf Bestellung 2421 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB0203HA3-00CER | Delta Electronics | Blowers & Centrifugal Fans Blower, 20x3mm, 3VDC, Sleeve, 3 Position Connector, Lock Rotor Sensor, Tach | auf Bestellung 873 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB0205HA5-00HSF | Delta Electronics | Blowers & Centrifugal Fans DC Blower, 20x20x5mm, 5VDC, 0.54CFM, 0.5W, 32.7dBA, Sleeve, 4x Wire, Tach/PWM | auf Bestellung 304 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB0205HA5-00HSF | Delta Electronics | Description: BLOWER SQUARE 20X5MM 5VDC PWM Features: Locked Rotor Protection, PWM Control, Speed Sensor (Tach) Packaging: Box Voltage - Rated: 5VDC Size / Dimension: Square - 20mm L x 20mm H Bearing Type: Sleeve RPM: 10500 RPM Air Flow: 0.530 CFM (0.015m³/min) Width: 5.00mm Operating Temperature: 14 ~ 140°F (-10 ~ 60°C) Termination: 4 Position Rectangular Connector Ingress Protection: IP55 - Dust Protected, Water Resistant Fan Type: Tubeaxial Noise: 32.7dB(A) Static Pressure: 0.432 in H2O (107.7 Pa) Power (Watts): 0.5 W | auf Bestellung 15174 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB0205HP-00EFG | Delta Electronics | Description: FAN AXIAL 17X5.28MM 5VDC WIRE Packaging: Box Features: Locked Rotor Protection, PWM Control, Speed Sensor (Tach) Voltage - Rated: 5VDC Size / Dimension: Square - 17mm L x 17mm H Bearing Type: Sleeve RPM: 12000 RPM Air Flow: 0.570 CFM (0.016m³/min) Width: 5.28mm Weight: 0.004 lb (1.81 g) Operating Temperature: 14 ~ 140°F (-10 ~ 60°C) Termination: 4 Wire Leads Approval Agency: cURus, TUV Fan Type: Tubeaxial Noise: 35.9dB(A) Static Pressure: 0.400 in H2O (99.6 Pa) Part Status: Active Power (Watts): 400 mW | auf Bestellung 1619 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB0205HP-00EFG | Delta Electronics Inc. | DC Fan Axial Sleeve Bearing 5V 2V to 5.5V 0.57CFM 35.9dB 20 X 20 X 5.28mm PWM/Tachometer | Produkt ist nicht verfügbar | |||||||||||||||||
BSB0205HP-00EFG | Delta Electronics | DC Fans Tubeaxial Fan, 20x5mm, 5VDC, Sleeve, 4-Lead Wires, Lock Rotor Sensor, Tach, PWM | auf Bestellung 904 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB0205HP-00EFG | Delta Electronics | DC Fan Axial Sleeve Bearing 5V 2V to 5.5V 0.57CFM 35.9dB 20 X 20 X 5.28mm PWM/Tachometer | Produkt ist nicht verfügbar | |||||||||||||||||
BSB024N03LX G | Infineon Technologies | Description: MOSFET N-CH 30V 27A/145A 2WDSON Packaging: Tape & Reel (TR) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 145A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||
BSB028N06NN3 G | Infineon Technologies | MOSFET N-Ch 60V 90A CanPAK3 MN OptiMOS 3 | auf Bestellung 3100 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB028N06NN3G | Infineon technologies | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BSB028N06NN3GXUMA1 | Infineon Technologies | Trans MOSFET N-CH Si 60V 22A 7-Pin WDSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BSB028N06NN3GXUMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 22A/90A 2WDSON Packaging: Cut Tape (CT) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V Power Dissipation (Max): 2.2W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 102µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V | auf Bestellung 14243 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB028N06NN3GXUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 78W Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 78W Case: CanPAK™ M; MG-WDSON-2 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
BSB028N06NN3GXUMA1 | INFINEON | Description: INFINEON - BSB028N06NN3GXUMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 90 A, 0.0028 ohm, WDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 90A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 78W Bauform - Transistor: WDSON Anzahl der Pins: 2Pins Produktpalette: OptiMOS 3 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0028ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 4449 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BSB028N06NN3GXUMA1 | Infineon Technologies | Trans MOSFET N-CH Si 60V 22A 7-Pin WDSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BSB028N06NN3GXUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 78W Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 78W Case: CanPAK™ M; MG-WDSON-2 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
BSB028N06NN3GXUMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 22A/90A 2WDSON Packaging: Tape & Reel (TR) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V Power Dissipation (Max): 2.2W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 102µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB028N06NN3GXUMA1 | Infineon Technologies | Trans MOSFET N-CH Si 60V 22A 7-Pin WDSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BSB028N06NN3GXUMA1 | INFINEON | Description: INFINEON - BSB028N06NN3GXUMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 90 A, 0.0028 ohm, WDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 90A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 78W Bauform - Transistor: WDSON Anzahl der Pins: 2Pins Produktpalette: OptiMOS 3 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0028ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 4449 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BSB028N06NN3GXUMA2 | Infineon Technologies | OptiMOS 3 Power-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
BSB028N06NN3GXUMA2 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V Power Dissipation (Max): 2.2W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 102µA Supplier Device Package: MG-WDSON-5-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||
BSB044N08NN3 G | Infineon Technologies | MOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3 | auf Bestellung 1160 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB044N08NN3GXUMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 18A/90A 2WDSON Packaging: Cut Tape (CT) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V Power Dissipation (Max): 2.2W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 97µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 40 V | auf Bestellung 10715 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB044N08NN3GXUMA1 | INFINEON | Description: INFINEON - BSB044N08NN3GXUMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 90 A, 0.0037 ohm, WDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 90A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 3 - 168 Stunden usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 78W Bauform - Transistor: WDSON Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0037ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 4870 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BSB044N08NN3GXUMA1 | Infineon Technologies | Trans MOSFET N-CH Si 80V 18A Automotive 7-Pin WDSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BSB044N08NN3GXUMA1 | Infineon Technologies | Description: MOSFET N-CH 80V 18A/90A 2WDSON Packaging: Tape & Reel (TR) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V Power Dissipation (Max): 2.2W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 97µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 40 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB044N08NN3GXUMA1 | Infineon Technologies | MOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3 | auf Bestellung 2015 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB044N08NN3GXUMA1 | INFINEON | Description: INFINEON - BSB044N08NN3GXUMA1 - Leistungs-MOSFET, n-Kanal, 80 V, 90 A, 0.0037 ohm, WDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 90A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 3 - 168 Stunden usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 78W Bauform - Transistor: WDSON Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0037ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 4870 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BSB044N08NN3GXUMA1 | Infineon Technologies | Trans MOSFET N-CH Si 80V 18A Automotive 7-Pin WDSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BSB044N08NN3GXUMA1 | INFINEON TECHNOLOGIES | BSB044N08NN3GXUMA1 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
BSB044N08NN3GXUMA1 | Infineon Technologies | Trans MOSFET N-CH Si 80V 18A Automotive 7-Pin WDSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BSB053N03LP G | Infineon Technologies | Description: MOSFET N-CH 30V 71A 2WDSON | Produkt ist nicht verfügbar | |||||||||||||||||
BSB053N03LPG | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 30A, 10V Power Dissipation (Max): 2.3W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 15 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB056N10NN3 G | Infineon Technologies | MOSFET N-Ch 100V 83A CanPAK3 MN OptiMOS 3 | auf Bestellung 8122 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB056N10NN3GXUMA1 Produktcode: 125684 | Verschiedene Bauteile > Other components 3 | Produkt ist nicht verfügbar | ||||||||||||||||||
BSB056N10NN3GXUMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 9A Automotive 7-Pin WDSON T/R | auf Bestellung 3600 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BSB056N10NN3GXUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 52A; 78W Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 52A Power dissipation: 78W Case: CanPAK™ MN; MG-WDSON-2 Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
BSB056N10NN3GXUMA1 | INFINEON | Description: INFINEON - BSB056N10NN3GXUMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 83 A, 0.005 ohm, WDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 83A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.7V euEccn: NLR Verlustleistung: 78W Bauform - Transistor: WDSON Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.005ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BSB056N10NN3GXUMA1 | Infineon Technologies | BSB056N10NN3GXUMA1 Infineon Technologies AG Transistors MOSFETs N-CH 100V 9A Automotive 7-Pin WDSON T/R - Arrow.com | Produkt ist nicht verfügbar | |||||||||||||||||
BSB056N10NN3GXUMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 9A/83A 2WDSON Packaging: Cut Tape (CT) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 83A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V | auf Bestellung 8874 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB056N10NN3GXUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 52A; 78W Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 52A Power dissipation: 78W Case: CanPAK™ MN; MG-WDSON-2 Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
BSB056N10NN3GXUMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 9A Automotive 7-Pin WDSON T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BSB056N10NN3GXUMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 9A/83A 2WDSON Packaging: Tape & Reel (TR) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 83A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB056N10NN3GXUMA1 | INFINEON | Description: INFINEON - BSB056N10NN3GXUMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 83 A, 0.005 ohm, WDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 83A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.7V euEccn: NLR Verlustleistung: 78W Bauform - Transistor: WDSON Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.005ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BSB056N10NN3GXUMA1 | Infineon Technologies | BSB056N10NN3GXUMA1 Infineon Technologies AG Transistors MOSFETs N-CH 100V 9A Automotive 7-Pin WDSON T/R - Arrow.com | auf Bestellung 4713 Stücke: Lieferzeit 14-21 Tag (e) |
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BSB056N10NN3GXUMA2 | Infineon Technologies | Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 83A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: MG-WDSON-5-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
BSB056N10NN3GXUMA3 | Infineon Technologies | Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 83A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: MG-WDSON-5-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
BSB104N08NP3G | Infineon technologies | auf Bestellung 10 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BSB104N08NP3GXUMA1 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V Power Dissipation (Max): 2.8W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: MG-WDSON-2-6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||||
BSB104N08NP3GXUMA2 | Infineon Technologies | N-Channel Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
BSB104N08NP3GXUMA2 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V Power Dissipation (Max): 2.8W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: MG-WDSON-2-6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||||
BSB104N08NP3GXUMA3 | Infineon Technologies | Trans MOSFET N-CH 80V 13A 7-Pin WDSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BSB104N08NP3GXUMA3 | Infineon Technologies | Description: TRENCH 40<-<100V Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V Power Dissipation (Max): 2.8W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 40 V Supplier Device Package: MG-WDSON-2-6 | Produkt ist nicht verfügbar | |||||||||||||||||
BSB104N08NP3GXUMA3 | Infineon Technologies | MOSFETs Y | Produkt ist nicht verfügbar | |||||||||||||||||
BSB104N08NP3GXUSA1 | Infineon Technologies | MOSFET TRENCH 40<-<100V | auf Bestellung 3564 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB104N08NP3GXUSA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 32A; 48W Mounting: SMD Case: CanPAK™ M; MG-WDSON-2 On-state resistance: 10.4mΩ Type of transistor: N-MOSFET Power dissipation: 48W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 32A Anzahl je Verpackung: 5000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
BSB104N08NP3GXUSA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 32A; 48W Mounting: SMD Case: CanPAK™ M; MG-WDSON-2 On-state resistance: 10.4mΩ Type of transistor: N-MOSFET Power dissipation: 48W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 32A | Produkt ist nicht verfügbar | |||||||||||||||||
BSB104N08NP3GXUSA1 | Infineon Technologies | Description: MOSFET N-CH 80V 13A/50A 2WDSON Packaging: Tape & Reel (TR) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V Power Dissipation (Max): 2.8W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||||
BSB1270002 | TXC Corporation | Standard Clock Oscillators 212.5MHz 3.3V 0C +70C | Produkt ist nicht verfügbar | |||||||||||||||||
BSB1270002 | TXC CORPORATION | Description: OSC XO 212.5MHZ 3.3V SMD | auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
BSB1270003 | TXC CORPORATION | Description: XTAL OSC XO 212.5000MHZ LVPECL Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Mounting Type: Surface Mount Output: LVPECL Function: Enable/Disable Type: XO (Standard) Operating Temperature: -5°C ~ 85°C Frequency Stability: ±100ppm Voltage - Supply: 3.3V Height - Seated (Max): 0.071" (1.80mm) Frequency: 212.5 MHz Base Resonator: Crystal | Produkt ist nicht verfügbar | |||||||||||||||||
BSB1270003 | TXC Corporation | Standard Clock Oscillators 212.5MHz 3.3V -5C +85C | Produkt ist nicht verfügbar | |||||||||||||||||
BSB14D | Bussmann / Eaton | Circuit Breaker Accessories SEL. HANDLE-BLACK | Produkt ist nicht verfügbar | |||||||||||||||||
BSB165N15NZ3 G | Infineon Technologies | Description: MOSFET N-CH 150V 9A WDSON-2 | auf Bestellung 9105 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
BSB165N15NZ3 G | Infineon Technologies | Description: MOSFET N-CH 150V 9A WDSON-2 | auf Bestellung 9105 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
BSB165N15NZ3 G | Infineon Technologies | MOSFET N-Ch 150V 45A CanPAK3 MZ OptiMOS 3 | Produkt ist nicht verfügbar | |||||||||||||||||
BSB165N15NZ3G | Infineon technologies | auf Bestellung 40 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BSB165N15NZ3G | Infineon Technologies | Description: BSB165N15 - 12V-300V N-CHANNEL P Packaging: Bulk Package / Case: DirectFET™ Isometric MZ Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 110µA Supplier Device Package: MG-WDSON-2-9 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V | auf Bestellung 4012 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB165N15NZ3GXUMA1 | Infineon Technologies | Description: MOSFET N-CH 150V 9A/45A 2WDSON Packaging: Cut Tape (CT) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 110µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||
BSB165N15NZ3GXUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 45A Power dissipation: 78W Case: CanPAK™ MZ; MG-WDSON-2 Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
BSB165N15NZ3GXUMA1 | Infineon Technologies | MOSFETs N-Ch 150V 45A CanPAK3 MZ OptiMOS 3 | auf Bestellung 1341 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB165N15NZ3GXUMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 9A Automotive 7-Pin WDSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BSB165N15NZ3GXUMA1 | Infineon Technologies | Description: MOSFET N-CH 150V 9A/45A 2WDSON Packaging: Tape & Reel (TR) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 110µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||
BSB165N15NZ3GXUMA1 | Infineon Technologies | Description: MOSFET N-CH 150V 9A/45A 2WDSON Packaging: Bulk Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 110µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V | auf Bestellung 8786 Stücke: Lieferzeit 10-14 Tag (e) |
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BSB165N15NZ3GXUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 45A Power dissipation: 78W Case: CanPAK™ MZ; MG-WDSON-2 Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
BSB165N15NZ3GXUMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 9A Automotive 7-Pin WDSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BSB165N15NZ3GXUMA2 | Infineon Technologies | MOSFETs Y | Produkt ist nicht verfügbar | |||||||||||||||||
BSB165N15NZ3GXUMA2 | Infineon Technologies | BSB165N15NZ3GXUMA2 | Produkt ist nicht verfügbar | |||||||||||||||||
BSB165N15NZ3GXUMA2 | Infineon Technologies | Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MZ Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 110µA Supplier Device Package: MG-WDSON-2-9 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||
BSB165N15NZ3GXUMA3 | Infineon Technologies | MOSFETs Y | Produkt ist nicht verfügbar | |||||||||||||||||
BSB165N15NZ3GXUMA3 | Infineon Technologies | BSB165N15NZ3GXUMA3 | Produkt ist nicht verfügbar | |||||||||||||||||
BSB165N15NZ3GXUMA3 | Infineon Technologies | Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MZ Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 110µA Supplier Device Package: MG-WDSON-2-9 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||
BSB20KRT Produktcode: 98225 | Steckverbinder, Reihenklemmen > Kleinleistungs Steckverbinder | Produkt ist nicht verfügbar | ||||||||||||||||||
BSB20KSW Produktcode: 98224 | Steckverbinder, Reihenklemmen > Kleinleistungs Steckverbinder | Produkt ist nicht verfügbar | ||||||||||||||||||
BSB280N15NZ3 G | Infineon Technologies | MOSFET N-Ch 150V 30A CanPAK3 MZ OptiMOS 3 | Produkt ist nicht verfügbar | |||||||||||||||||
BSB280N15NZ3 G Produktcode: 125682 | Verschiedene Bauteile > Other components 3 | Produkt ist nicht verfügbar | ||||||||||||||||||
BSB280N15NZ3G | Infineon Technologies | Description: BSB280N15 - 12V-300V N-CHANNEL P Packaging: Bulk Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 60µA Supplier Device Package: MG-WDSON-2-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||
BSB280N15NZ3GXUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 30A; 57W Mounting: SMD Case: CanPAK™ MZ; MG-WDSON-2 Drain-source voltage: 150V Drain current: 30A On-state resistance: 28mΩ Type of transistor: N-MOSFET Power dissipation: 57W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Technology: OptiMOS™ | Produkt ist nicht verfügbar | |||||||||||||||||
BSB280N15NZ3GXUMA1 | Infineon Technologies | Description: MOSFET N-CH 150V 9A/30A 2WDSON Packaging: Tape & Reel (TR) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 60µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||
BSB280N15NZ3GXUMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 9A Automotive 7-Pin WDSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BSB280N15NZ3GXUMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 30A; 57W Mounting: SMD Case: CanPAK™ MZ; MG-WDSON-2 Drain-source voltage: 150V Drain current: 30A On-state resistance: 28mΩ Type of transistor: N-MOSFET Power dissipation: 57W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Technology: OptiMOS™ Anzahl je Verpackung: 5000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
BSB280N15NZ3GXUMA1 | Infineon Technologies | Trans MOSFET N-CH 150V 9A Automotive 7-Pin WDSON T/R | Produkt ist nicht verfügbar | |||||||||||||||||
BSB280N15NZ3GXUMA1 | Infineon Technologies | Description: MOSFET N-CH 150V 9A/30A 2WDSON Packaging: Cut Tape (CT) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 60µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||||
BSB280N15NZ3GXUMA1 | Infineon Technologies | MOSFET TRENCH >=100V | Produkt ist nicht verfügbar | |||||||||||||||||
BSB75-48S05FLT | module | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
BSB881N03LX3GXUMA1 | Rochester Electronics, LLC | Description: N-CHANNEL POWER MOSFET | auf Bestellung 260000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
BSB881N03LX3GXUMA1 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - BSB881N03LX3GXUMA1 - BSB881N03 - N-CHANNEL POWER MOSFET euEccn: TBC hazardous: false productTraceability: Yes-Date/Lot Code usEccn: TBC SVHC: No SVHC (27-Jun-2024) | auf Bestellung 260000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
BSBINJ12128 | Global Industrial | Description: JUMBO OPEN TOP WHITE CORRUGATED Packaging: Box Color: Oyster White Material: Cardboard Width: 12" Height: 8" Part Status: Active Depth: 12" | Produkt ist nicht verfügbar | |||||||||||||||||
BSBINJ121810 | Global Industrial | Description: JUMBO OPEN TOP WHITE CORRUGATED Packaging: Box Color: Oyster White Material: Cardboard Width: 12" Height: 10" Part Status: Active Depth: 18" | Produkt ist nicht verfügbar | |||||||||||||||||
BSBINJ8128 | Global Industrial | Description: JUMBO OPEN TOP WHITE CORRUGATED Packaging: Box Color: Oyster White Material: Cardboard Width: 8" Height: 8" Part Status: Active Depth: 12" | Produkt ist nicht verfügbar | |||||||||||||||||
BSBN2-103A | ALPS | 07+ | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
BSBN2-103A | ALPS | 07+ | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) |