Produkte > B1M
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||
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| B1M080120HC | BASiC SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W Case: TO247-3 Drain-source voltage: 1.2kV Drain current: 27A On-state resistance: 80mΩ Type of transistor: N-MOSFET Power dissipation: 241W Polarisation: unipolar Kind of package: tube Gate charge: 149nC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 80A Technology: SiC Mounting: THT Anzahl je Verpackung: 1 Stücke | auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1M080120HC | BASiC SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W Case: TO247-3 Drain-source voltage: 1.2kV Drain current: 27A On-state resistance: 80mΩ Type of transistor: N-MOSFET Power dissipation: 241W Polarisation: unipolar Kind of package: tube Gate charge: 149nC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 80A Technology: SiC Mounting: THT | auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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| B1M080120HK | BASiC SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W Case: TO247-4 Drain-source voltage: 1.2kV Drain current: 27A On-state resistance: 80mΩ Type of transistor: N-MOSFET Power dissipation: 241W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 149nC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 80A Technology: SiC Mounting: THT | auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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| B1M080120HK | BASiC SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W Case: TO247-4 Drain-source voltage: 1.2kV Drain current: 27A On-state resistance: 80mΩ Type of transistor: N-MOSFET Power dissipation: 241W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 149nC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 80A Technology: SiC Mounting: THT Anzahl je Verpackung: 1 Stücke | auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1M1774404EB4230FP | Corning | Corning 4 PORT 4 SCAPC 230FT SST FLAT | Produkt ist nicht verfügbar | |||||||
| B1MF | DC COMPONENTS | B1MF-DC SMD/THT sing. phase diode bridge rectif. | auf Bestellung 10364 Stücke: Lieferzeit 7-14 Tag (e) |
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