Produkte > 2V7
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||
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2V7002K | onsemi | onsemi NFET SOT23 60V 115MA 7MO | Produkt ist nicht verfügbar | |||||||||||||||||
2V7002KT1G | ON Semiconductor | Trans MOSFET N-CH 60V 0.38A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 4395 Stücke: Lieferzeit 14-21 Tag (e) |
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2V7002KT1G | onsemi | Description: MOSFET N-CH 60V 320MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 300mW (Tj) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 24.5 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 17596 Stücke: Lieferzeit 10-14 Tag (e) |
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2V7002KT1G | ONSEMI | Description: ONSEMI - 2V7002KT1G - Leistungs-MOSFET, n-Kanal, 60 V, 380 mA, 1.19 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 380mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 420mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.19ohm | auf Bestellung 135428 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
2V7002KT1G | ON Semiconductor | Trans MOSFET N-CH 60V 0.38A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 3295 Stücke: Lieferzeit 14-21 Tag (e) |
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2V7002KT1G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
2V7002KT1G | onsemi | Description: MOSFET N-CH 60V 320MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 300mW (Tj) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 24.5 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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2V7002KT1G | ON Semiconductor | Trans MOSFET N-CH 60V 0.32A Automotive 3-Pin SOT-23 T/R | auf Bestellung 72000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
2V7002KT1G | ONSEMI | Description: ONSEMI - 2V7002KT1G - Leistungs-MOSFET, n-Kanal, 60 V, 380 mA, 1.19 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 380mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 420mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.19ohm | auf Bestellung 135428 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
2V7002KT1G | ON Semiconductor | Trans MOSFET N-CH 60V 0.38A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 99000 Stücke: Lieferzeit 14-21 Tag (e) |
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2V7002KT1G | ON Semiconductor | Trans MOSFET N-CH 60V 0.38A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 99000 Stücke: Lieferzeit 14-21 Tag (e) |
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2V7002KT1G | onsemi | MOSFETs NFET 60V 115MA 7MO | auf Bestellung 46449 Stücke: Lieferzeit 10-14 Tag (e) |
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2V7002KT1G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
2V7002KT1G 704 | ON-Semicoductor | Trans MOSFET N-CH 60V 0.32A Automotive 3-Pin SOT-23 2V7002KT1G T2V7002K Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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2V7002LT1 | ON Semiconductor | Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 | Produkt ist nicht verfügbar | |||||||||||||||||
2V7002LT1G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23 Mounting: SMD Case: SOT23 Power dissipation: 0.225W Polarisation: unipolar Drain current: 0.115A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 7.5Ω | auf Bestellung 2860 Stücke: Lieferzeit 14-21 Tag (e) |
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2V7002LT1G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23 Mounting: SMD Case: SOT23 Power dissipation: 0.225W Polarisation: unipolar Drain current: 0.115A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 7.5Ω Anzahl je Verpackung: 5 Stücke | auf Bestellung 2860 Stücke: Lieferzeit 7-14 Tag (e) |
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2V7002LT1G | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
2V7002LT1G | onsemi | Description: MOSFET N-CH 60V 115MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 7553 Stücke: Lieferzeit 10-14 Tag (e) |
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2V7002LT1G | onsemi | MOSFET NFET 60V 115MA 7.5O | auf Bestellung 206323 Stücke: Lieferzeit 736-740 Tag (e) |
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2V7002LT1G | onsemi | Description: MOSFET N-CH 60V 115MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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2V7002LT1G | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A Automotive 3-Pin SOT-23 T/R | auf Bestellung 51000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
2V7002LT1G | ON-Semicoductor | Trans MOSFET N-CH 60V 0.115A Automotive 3-Pin SOT-23 2V7002LT1G T2V7002 Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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2V7002LT1G | ONSEMI | Description: ONSEMI - 2V7002LT1G - Leistungs-MOSFET, n-Kanal, 60 V, 115 mA, 7.5 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 115mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 225mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 7.5ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 29528 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
2V7002LT1G Produktcode: 154370 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
2V7002LT3G | ON Semiconductor | MOSFET NFET 60V 115MA 7.5O | auf Bestellung 26128 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
2V7002LT3G | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
2V7002LT3G | onsemi | Description: MOSFET N-CH 60V 115MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 136 Stücke: Lieferzeit 10-14 Tag (e) |
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2V7002LT3G | ON Semiconductor | Trans MOSFET N-CH 60V 0.115A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
2V7002LT3G | onsemi | Description: MOSFET N-CH 60V 115MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
2V7002W | onsemi | onsemi NFET SC70 60V 115MA 7OHM | Produkt ist nicht verfügbar | |||||||||||||||||
2V7002WT1G | ON Semiconductor | Trans MOSFET N-CH 60V 0.31A Automotive AEC-Q101 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
2V7002WT1G | onsemi | Description: MOSFET N-CH 60V 310MA SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 280mW (Tj) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-70-3 (SOT323) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 24.5 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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2V7002WT1G | onsemi | MOSFET NFET 60V 115MA 7OHM | auf Bestellung 102098 Stücke: Lieferzeit 10-14 Tag (e) |
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2V7002WT1G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.4A; 0.28W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Pulsed drain current: 1.4A Power dissipation: 0.28W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
2V7002WT1G | ONSEMI | Description: ONSEMI - 2V7002WT1G - Leistungs-MOSFET, n-Kanal, 60 V, 310 mA, 1.19 ohm, SC-70, Oberflächenmontage tariffCode: 85412100 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Verlustleistung: 280mW Kanaltyp: n-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 1.19ohm rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 31390 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
2V7002WT1G | ON Semiconductor | Trans MOSFET N-CH 60V 0.31A Automotive AEC-Q101 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
2V7002WT1G | onsemi | Description: MOSFET N-CH 60V 310MA SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 280mW (Tj) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-70-3 (SOT323) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 24.5 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 49175 Stücke: Lieferzeit 10-14 Tag (e) |
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2V7002WT1G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.4A; 0.28W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Pulsed drain current: 1.4A Power dissipation: 0.28W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | Produkt ist nicht verfügbar | |||||||||||||||||
2V7002WT1G | ON Semiconductor | Trans MOSFET N-CH 60V 0.31A Automotive 3-Pin SC-70 T/R | auf Bestellung 132000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
2V7002WT1G | ONSEMI | Description: ONSEMI - 2V7002WT1G - Leistungs-MOSFET, n-Kanal, 60 V, 310 mA, 1.19 ohm, SC-70, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 310mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 280mW Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 280mW Bauform - Transistor: SC-70 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 1.19ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.19ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 31390 Stücke: Lieferzeit 14-21 Tag (e) |