Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (350174) > Seite 760 nach 5837
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.jpg "UFS310Je3/TR13") |
UFS310Je3/TR13 | Microchip Technology |
 Description: DIODE GEN PURP 100V 3A DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
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UFS315J/TR13 | Microchip Technology |
Description: DIODE GEN PURP 150V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
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UFS315JE3/TR13 | Microchip Technology |
Description: DIODE GEN PURP 150V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
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.jpg "UFS380Je3/TR13") |
UFS380Je3/TR13 | Microchip Technology |
Description: DIODE GEN PURP 800V 3A DO214AB |
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| UFS540G/TR13 | Microchip Technology |
Description: DIODE GEN PURP 400V 5A DO215AB |
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| UFS540Ge3/TR13 | Microchip Technology |
Description: DIODE GEN PURP 400V 5A DO215AB |
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UFS540J/TR13 | Microchip Technology |
Description: DIODE GEN PURP 400V 5A DO214AB |
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UFS540Je3/TR13 | Microchip Technology |
Description: DIODE GEN PURP 400V 5A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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UPR10e3/TR13 | Microchip Technology |
Description: DIODE GEN PURP 100V 2.5A DO216 Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 2.5A Supplier Device Package: DO-216 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
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UPR30e3/TR13 | Microchip Technology |
Description: DIODE GEN PURP 300V 2A POWERMITE Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
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UPR5/TR13 | Microchip Technology |
Description: DIODE GEN PURP 50V 2.5A DO216 Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 2.5A Supplier Device Package: DO-216 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 50 V |
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UPR5e3/TR13 | Microchip Technology |
Description: DIODE GEN PURP 50V 2.5A DO216 Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 2.5A Supplier Device Package: DO-216 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 50 V |
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UPR60/TR13 | Microchip Technology |
Description: DIODE GEN PURP 600V 2A POWERMITE Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
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UPR60e3/TR13 | Microchip Technology |
Description: DIODE GEN PURP 600V 2A POWERMITE Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
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| UPS10100/TR13 | Microchip Technology |
Description: DIODE SCHOTTKY 10A 100V PWRMITE Packaging: Tape & Reel (TR) |
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| UPS10100e3/TR13 | Microchip Technology |
Description: DIODE SCHOTTKY 10A 100V PWRMITE Packaging: Tape & Reel (TR) |
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UPS120/TR13 | Microchip Technology |
Description: DIODE SCHOTTKY 20V 1A POWERMITE Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 80pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 400 µA @ 20 V |
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UPS120E/TR13 | Microchip Technology |
Description: DIODE SCHOTTKY 20V 1A POWERMITE Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 80pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 400 µA @ 20 V |
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UPS120E3/TR13 | Microchip Technology |
Description: DIODE SCHOTTKY 20V 1A POWERMITE Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 80pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 400 µA @ 20 V |
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UPS120EE3/TR13 | Microchip Technology |
Description: DIODE SCHOTTKY 20V 1A POWERMITE Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 20 V |
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UPS140/TR13 | Microchip Technology |
Description: DIODE SCHOTTKY 40V 1A POWERMITE Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 400 µA @ 40 V |
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UPS140E3/TR13 | Microchip Technology |
Description: DIODE SCHOTTKY 40V 1A POWERMITE Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 400 µA @ 40 V |
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| UPS170/TR13 | Microchip Technology | Description: DIODE SCHOTTKY 1A 70V POWERMITE |
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| UPS170e3/TR13 | Microchip Technology | Description: DIODE SCHOTTKY 1A 70V POWERMITE |
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UPS315/TR13 | Microchip Technology |
Description: DIODE SCHOTTKY 15V 3A POWERMITE Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 320 mV @ 3 A Current - Reverse Leakage @ Vr: 2 mA @ 15 V |
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UPS315e3/TR13 | Microchip Technology |
Description: DIODE SCHOTTKY 15V 3A POWERMITE Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 320 mV @ 3 A Current - Reverse Leakage @ Vr: 2 mA @ 15 V |
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UPS5100/TR13 | Microchip Technology |
Description: DIODE SCHOTTKY 100V 5A POWERMITE Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 150pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 810 mV @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 100 V |
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UPS540/TR13 | Microchip Technology |
Description: DIODE SCHOTTKY 40V 5A POWERMITE Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 250pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
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UPS560/TR13 | Microchip Technology |
Description: DIODE SCHOTTKY 60V 5A POWERMITE Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 150pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V |
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UPS5817/TR13 | Microchip Technology |
Description: DIODE SCHOTTKY 20V 1A POWERMITE Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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UPS5817e3/TR13 | Microchip Technology |
Description: DIODE SCHOTTKY 20V 1A POWERMITE Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 105pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
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UPS5819/TR13 | Microchip Technology |
Description: DIODE SCHOTTKY 40V 1A POWERMITE Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 40 V |
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UPS760/TR13 | Microchip Technology | Description: DIODE SCHOTTKY 60V 7A POWERMITE |
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-Top.jpg "UPT17/TR13") |
UPT17/TR13 | Microchip Technology |
Description: TVS DIODE 17VWM 29.2VC POWERMIT1 Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.14A Voltage - Reverse Standoff (Typ): 17V Supplier Device Package: Powermite 1 (DO216-AA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 19V Voltage - Clamping (Max) @ Ipp: 29.2V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No |
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UPT17E3/TR13 | Microchip Technology |
Description: TVS DIODE 17VWM 29.2VC POWERMIT1 Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.14A Voltage - Reverse Standoff (Typ): 17V Supplier Device Package: Powermite 1 (DO216-AA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 19V Voltage - Clamping (Max) @ Ipp: 29.2V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No |
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UPT17R/TR13 | Microchip Technology |
Description: TVS DIODE 17VWM 29.2VC POWERMIT1 Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.14A Voltage - Reverse Standoff (Typ): 17V Supplier Device Package: Powermite 1 (DO216-AA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 19V Voltage - Clamping (Max) @ Ipp: 29.2V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No |
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UPT17Re3/TR13 | Microchip Technology |
Description: TVS DIODE 17VWM 29.2VC POWERMIT1 Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.14A Voltage - Reverse Standoff (Typ): 17V Supplier Device Package: Powermite 1 (DO216-AA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 19V Voltage - Clamping (Max) @ Ipp: 29.2V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No |
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-Top.jpg "UPT8/TR13") |
UPT8/TR13 | Microchip Technology |
Description: TVS DIODE 8VWM 13.7VC POWERMITE1 Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10.9A Voltage - Reverse Standoff (Typ): 8V Supplier Device Package: Powermite 1 (DO216-AA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 9V Voltage - Clamping (Max) @ Ipp: 13.7V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No |
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UPT8e3/TR13 | Microchip Technology |
Description: TVS DIODE 8VWM 13.7VC POWERMITE1 Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10.9A Voltage - Reverse Standoff (Typ): 8V Supplier Device Package: Powermite 1 (DO216-AA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 9V Voltage - Clamping (Max) @ Ipp: 13.7V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No |
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UPT8R/TR13 | Microchip Technology |
Description: TVS DIODE 8VWM 13.7VC POWERMITE1 Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10.9A Voltage - Reverse Standoff (Typ): 8V Supplier Device Package: Powermite 1 (DO216-AA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 9V Voltage - Clamping (Max) @ Ipp: 13.7V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No |
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UPT8Re3/TR13 | Microchip Technology |
Description: TVS DIODE 8VWM 13.7VC POWERMITE1 Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10.9A Voltage - Reverse Standoff (Typ): 8V Supplier Device Package: Powermite 1 (DO216-AA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 9V Voltage - Clamping (Max) @ Ipp: 13.7V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No |
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UPTB10/TR13 | Microchip Technology |
Description: TVS DIODE 10VWM 18VC POWERMITE 1 Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 8.33A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: Powermite 1 (DO216-AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 11V Voltage - Clamping (Max) @ Ipp: 18V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No |
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UPTB12/TR13 | Microchip Technology |
Description: TVS DIODE 12VWM 21.6VC POWERMIT1 Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.94A Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: Powermite 1 (DO216-AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 13.8V Voltage - Clamping (Max) @ Ipp: 21.6V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No |
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UPTB12e3/TR13 | Microchip Technology |
Description: TVS DIODE 12VWM 21.6VC POWERMIT1 Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.94A Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: Powermite 1 (DO216-AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 13.8V Voltage - Clamping (Max) @ Ipp: 21.6V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No |
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UPTB15/TR13 | Microchip Technology |
Description: TVS DIODE 15VWM 26VC POWERMITE 1 Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.77A Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: Powermite 1 (DO216-AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 26V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No |
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UPTB15e3/TR13 | Microchip Technology |
Description: TVS DIODE 15VWM 26VC POWERMITE 1 Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.77A Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: Powermite 1 (DO216-AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 26V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No |
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UPTB17/TR13 | Microchip Technology |
Description: TVS DIODE 17VWM 29.2VC POWERMIT1 Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.14A Voltage - Reverse Standoff (Typ): 17V Supplier Device Package: Powermite 1 (DO216-AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 19V Voltage - Clamping (Max) @ Ipp: 29.2V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No |
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UPTB17e3/TR13 | Microchip Technology |
Description: TVS DIODE 17VWM 29.2VC POWERMIT1 Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.14A Voltage - Reverse Standoff (Typ): 17V Supplier Device Package: Powermite 1 (DO216-AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 19V Voltage - Clamping (Max) @ Ipp: 29.2V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
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UPTB8/TR13 | Microchip Technology |
Description: TVS DIODE 8VWM 13.7VC POWERMITE1 Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10.9A Voltage - Reverse Standoff (Typ): 8V Supplier Device Package: Powermite 1 (DO216-AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 9V Voltage - Clamping (Max) @ Ipp: 13.7V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
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UPTB8e3/TR13 | Microchip Technology |
Description: TVS DIODE 8VWM 13.7VC POWERMITE1 Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10.9A Voltage - Reverse Standoff (Typ): 8V Supplier Device Package: Powermite 1 (DO216-AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 9V Voltage - Clamping (Max) @ Ipp: 13.7V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
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USB50803C-A/TR13 | Microchip Technology |
Description: TVS DIODE 3.3VWM 11VC 8-SO |
Produkt ist nicht verfügbar |
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USB50803CE3/TR13 | Microchip Technology |
Description: TVS DIODE 3.3VWM 11VC 8-SO |
Produkt ist nicht verfügbar |
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USB50803e3/TR13 | Microchip Technology |
Description: TVS DIODE 3.3VWM 11VC 8-SO |
Produkt ist nicht verfügbar |
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USB50805C/TR13 | Microchip Technology |
Description: TVS DIODE 5VWM 13VC 8-SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Ethernet Capacitance @ Frequency: 3pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: 8-SO Bidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 13V Power - Peak Pulse: 500W Power Line Protection: No |
Produkt ist nicht verfügbar |
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USB50805C-A/TR13 | Microchip Technology |
Description: TVS DIODE 5VWM 13VC 8-SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Ethernet Capacitance @ Frequency: 3pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: 8-SO Bidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 13V Power - Peak Pulse: 500W Power Line Protection: No |
Produkt ist nicht verfügbar |
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USB50805C-AE3/TR13 | Microchip Technology |
Description: TVS DIODE 5VWM 13VC 8-SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Ethernet Capacitance @ Frequency: 3pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: 8-SO Bidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 13V Power - Peak Pulse: 500W Power Line Protection: No |
Produkt ist nicht verfügbar |
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USB50805Ce3/TR13 | Microchip Technology |
Description: TVS DIODE 5VWM 13VC 8-SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Ethernet Capacitance @ Frequency: 3pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: 8-SO Bidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 13V Power - Peak Pulse: 500W Power Line Protection: No |
Produkt ist nicht verfügbar |
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USB50805e3/TR13 | Microchip Technology |
Description: TVS DIODE 5VWM 13VC 8-SO |
Produkt ist nicht verfügbar |
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USB50812C/TR13 | Microchip Technology |
Description: TVS DIODE 12VWM 26VC 8-SO |
Produkt ist nicht verfügbar |
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USB50812C-A/TR13 | Microchip Technology |
Description: TVS DIODE 12VWM 26VC 8-SO |
Produkt ist nicht verfügbar |
| UFS310Je3/TR13 |
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Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
| UFS315J/TR13 |
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Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE GEN PURP 150V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Produkt ist nicht verfügbar
| UFS315JE3/TR13 |
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Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE GEN PURP 150V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Produkt ist nicht verfügbar
| UFS380Je3/TR13 |
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Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 3A DO214AB
Description: DIODE GEN PURP 800V 3A DO214AB
Produkt ist nicht verfügbar
| UFS540G/TR13 |
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Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 5A DO215AB
Description: DIODE GEN PURP 400V 5A DO215AB
Produkt ist nicht verfügbar
| UFS540Ge3/TR13 |
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Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 5A DO215AB
Description: DIODE GEN PURP 400V 5A DO215AB
Produkt ist nicht verfügbar
| UFS540J/TR13 |
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Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 5A DO214AB
Description: DIODE GEN PURP 400V 5A DO214AB
Produkt ist nicht verfügbar
| UFS540Je3/TR13 |
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Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
| UPR10e3/TR13 |
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Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 2.5A DO216
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-216
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE GEN PURP 100V 2.5A DO216
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-216
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
| UPR30e3/TR13 |
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Hersteller: Microchip Technology
Description: DIODE GEN PURP 300V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: DIODE GEN PURP 300V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Produkt ist nicht verfügbar
| UPR5/TR13 |
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Hersteller: Microchip Technology
Description: DIODE GEN PURP 50V 2.5A DO216
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-216
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Description: DIODE GEN PURP 50V 2.5A DO216
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-216
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Produkt ist nicht verfügbar
| UPR5e3/TR13 |
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Hersteller: Microchip Technology
Description: DIODE GEN PURP 50V 2.5A DO216
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-216
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Description: DIODE GEN PURP 50V 2.5A DO216
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DO-216
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Produkt ist nicht verfügbar
| UPR60/TR13 |
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Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
| UPR60e3/TR13 |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
| UPS10100/TR13 |
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 10A 100V PWRMITE
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 10A 100V PWRMITE
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
| UPS10100e3/TR13 |
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 10A 100V PWRMITE
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 10A 100V PWRMITE
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
| UPS120/TR13 |
|
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Produkt ist nicht verfügbar
| UPS120E/TR13 |
|
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Produkt ist nicht verfügbar
| UPS120E3/TR13 |
|
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Produkt ist nicht verfügbar
| UPS120EE3/TR13 |
|
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 20 V
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 20 V
Produkt ist nicht verfügbar
| UPS140/TR13 |
|
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 40V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Produkt ist nicht verfügbar
| UPS140E3/TR13 |
|
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 40V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Produkt ist nicht verfügbar
| UPS170/TR13 |
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 1A 70V POWERMITE
Description: DIODE SCHOTTKY 1A 70V POWERMITE
Produkt ist nicht verfügbar
| UPS170e3/TR13 |
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 1A 70V POWERMITE
Description: DIODE SCHOTTKY 1A 70V POWERMITE
Produkt ist nicht verfügbar
| UPS315/TR13 |
|
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 15V 3A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 320 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 15 V
Description: DIODE SCHOTTKY 15V 3A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 320 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 15 V
Produkt ist nicht verfügbar
| UPS315e3/TR13 |
|
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 15V 3A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 320 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 15 V
Description: DIODE SCHOTTKY 15V 3A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 320 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 15 V
Produkt ist nicht verfügbar
| UPS5100/TR13 |
|
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 100V 5A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Description: DIODE SCHOTTKY 100V 5A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Produkt ist nicht verfügbar
| UPS540/TR13 |
|
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 40V 5A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 5A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
| UPS560/TR13 |
|
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 60V 5A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Description: DIODE SCHOTTKY 60V 5A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Produkt ist nicht verfügbar
| UPS5817/TR13 |
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar
| UPS5817e3/TR13 |
|
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 105pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 105pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar
| UPS5819/TR13 |
|
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 40V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Description: DIODE SCHOTTKY 40V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Produkt ist nicht verfügbar
| UPS760/TR13 |
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 60V 7A POWERMITE
Description: DIODE SCHOTTKY 60V 7A POWERMITE
Produkt ist nicht verfügbar
| UPT17/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 17VWM 29.2VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.14A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Description: TVS DIODE 17VWM 29.2VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.14A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
| UPT17E3/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 17VWM 29.2VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.14A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Description: TVS DIODE 17VWM 29.2VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.14A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
| UPT17R/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 17VWM 29.2VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.14A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Description: TVS DIODE 17VWM 29.2VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.14A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
| UPT17Re3/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 17VWM 29.2VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.14A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Description: TVS DIODE 17VWM 29.2VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.14A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
| UPT8/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 8VWM 13.7VC POWERMITE1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Description: TVS DIODE 8VWM 13.7VC POWERMITE1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
| UPT8e3/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 8VWM 13.7VC POWERMITE1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Description: TVS DIODE 8VWM 13.7VC POWERMITE1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
| UPT8R/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 8VWM 13.7VC POWERMITE1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Description: TVS DIODE 8VWM 13.7VC POWERMITE1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
| UPT8Re3/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 8VWM 13.7VC POWERMITE1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Description: TVS DIODE 8VWM 13.7VC POWERMITE1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: Powermite 1 (DO216-AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
| UPTB10/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10VWM 18VC POWERMITE 1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.33A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Description: TVS DIODE 10VWM 18VC POWERMITE 1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.33A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
| UPTB12/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 12VWM 21.6VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.94A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.8V
Voltage - Clamping (Max) @ Ipp: 21.6V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Description: TVS DIODE 12VWM 21.6VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.94A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.8V
Voltage - Clamping (Max) @ Ipp: 21.6V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
| UPTB12e3/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 12VWM 21.6VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.94A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.8V
Voltage - Clamping (Max) @ Ipp: 21.6V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Description: TVS DIODE 12VWM 21.6VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.94A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.8V
Voltage - Clamping (Max) @ Ipp: 21.6V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
| UPTB15/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 15VWM 26VC POWERMITE 1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.77A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Description: TVS DIODE 15VWM 26VC POWERMITE 1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.77A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
| UPTB15e3/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 15VWM 26VC POWERMITE 1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.77A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Description: TVS DIODE 15VWM 26VC POWERMITE 1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.77A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
| UPTB17/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 17VWM 29.2VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.14A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Description: TVS DIODE 17VWM 29.2VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.14A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
| UPTB17e3/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 17VWM 29.2VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.14A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Description: TVS DIODE 17VWM 29.2VC POWERMIT1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.14A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
| UPTB8/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 8VWM 13.7VC POWERMITE1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Description: TVS DIODE 8VWM 13.7VC POWERMITE1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
| UPTB8e3/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 8VWM 13.7VC POWERMITE1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Description: TVS DIODE 8VWM 13.7VC POWERMITE1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Produkt ist nicht verfügbar
| USB50803C-A/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 3.3VWM 11VC 8-SO
Description: TVS DIODE 3.3VWM 11VC 8-SO
Produkt ist nicht verfügbar
| USB50803CE3/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 3.3VWM 11VC 8-SO
Description: TVS DIODE 3.3VWM 11VC 8-SO
Produkt ist nicht verfügbar
| USB50803e3/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 3.3VWM 11VC 8-SO
Description: TVS DIODE 3.3VWM 11VC 8-SO
Produkt ist nicht verfügbar
| USB50805C/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 5VWM 13VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 8-SO
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 5VWM 13VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 8-SO
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 500W
Power Line Protection: No
Produkt ist nicht verfügbar
| USB50805C-A/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 5VWM 13VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 8-SO
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 5VWM 13VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 8-SO
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 500W
Power Line Protection: No
Produkt ist nicht verfügbar
| USB50805C-AE3/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 5VWM 13VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 8-SO
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 5VWM 13VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 8-SO
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 500W
Power Line Protection: No
Produkt ist nicht verfügbar
| USB50805Ce3/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 5VWM 13VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 8-SO
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 5VWM 13VC 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 8-SO
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 500W
Power Line Protection: No
Produkt ist nicht verfügbar
| USB50805e3/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 5VWM 13VC 8-SO
Description: TVS DIODE 5VWM 13VC 8-SO
Produkt ist nicht verfügbar
| USB50812C/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 12VWM 26VC 8-SO
Description: TVS DIODE 12VWM 26VC 8-SO
Produkt ist nicht verfügbar
| USB50812C-A/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 12VWM 26VC 8-SO
Description: TVS DIODE 12VWM 26VC 8-SO
Produkt ist nicht verfügbar