Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (354689) > Seite 1411 nach 5912
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| 1N6325 | Microchip Technology |
 Description: DIODE ZENER |
Produkt ist nicht verfügbar |
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| 1N6327 | Microchip Technology |
Description: DIODE ZENER |
Produkt ist nicht verfügbar |
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| 1N6329 | Microchip Technology |
Description: DIODE ZENER |
Produkt ist nicht verfügbar |
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JAN1N6321 | Microchip Technology |
Description: DIODE ZENER 7.5V 500MW DO35 |
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JAN1N6322 | Microchip Technology |
Description: DIODE ZENER 8.2V 500MW DO35 |
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JAN1N6323 | Microchip Technology |
Description: DIODE ZENER 9.1V 500MW DO35 |
Produkt ist nicht verfügbar |
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JAN1N6324 | Microchip Technology |
Description: DIODE ZENER 10V 500MW DO35 |
Produkt ist nicht verfügbar |
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JAN1N6325 | Microchip Technology |
Description: DIODE ZENER 11V 500MW DO35 |
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JAN1N6327 | Microchip Technology |
Description: DIODE ZENER 13V 500MW DO35 |
Produkt ist nicht verfügbar |
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USB7050T/KDX | Microchip Technology |
Description: 4 PORT USB3.1 GEN1 - PD UPSTREAM Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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USB7050T/KDX | Microchip Technology |
Description: 4 PORT USB3.1 GEN1 - PD UPSTREAM Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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USB7050-I/KDX | Microchip Technology |
Description: 4 PORT USB3.1 GEN1 - PD UPSTREAM Packaging: Tray DigiKey Programmable: Not Verified |
auf Bestellung 130 Stücke: Lieferzeit 10-14 Tag (e) |
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1N1124 | Microchip Technology |
Description: STANDARD RECTIFIER Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
Produkt ist nicht verfügbar |
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1N1124A | Microchip Technology |
Description: STANDARD RECTIFIER Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 3.3A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
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1N1124RA | Microchip Technology |
Description: STANDARD RECTIFIER Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 3.3A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
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JAN1N1124RA | Microchip Technology |
Description: DIODE GEN PURP 200V DO203AA Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Qualification: MIL-PRF-19500/260 |
Produkt ist nicht verfügbar |
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JAN1N1124A | Microchip Technology |
Description: DIODE GEN PURP 200V DO203AA Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Qualification: MIL-PRF-19500/260 |
Produkt ist nicht verfügbar |
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MSMCJ6.0Ae3 | Microchip Technology |
Description: TVS DIODE 6VWM 10.3VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 145.6A Voltage - Reverse Standoff (Typ): 6V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.67V Voltage - Clamping (Max) @ Ipp: 10.3V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MSMCJ6.0AE3/TR | Microchip Technology |
Description: TVS DIODE 6VWM 10.3VC SMCJ Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 145.6A Voltage - Reverse Standoff (Typ): 6V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.67V Voltage - Clamping (Max) @ Ipp: 10.3V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MSMCJ6.0A/TR | Microchip Technology |
Description: TVS DIODE 6VWM 10.3VC SMCJ Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 145.6A Voltage - Reverse Standoff (Typ): 6V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.67V Voltage - Clamping (Max) @ Ipp: 10.3V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MASMCJ6.0A | Microchip Technology |
Description: TVS DIODE 6VWM 10.3VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 145.6A Voltage - Reverse Standoff (Typ): 6V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.67V Voltage - Clamping (Max) @ Ipp: 10.3V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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| MX553EBF125M000-TR | Microchip Technology |
Description: XTAL OSC XO 125.0000MHZ LVPECL Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm) Mounting Type: Surface Mount Output: LVPECL Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 2.375V ~ 3.63V Current - Supply (Max): 120mA Height - Seated (Max): 0.055" (1.40mm) Frequency: 125 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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| MX553EBF125M000 | Microchip Technology |
Description: XTAL OSC XO 125.0000MHZ LVPECL |
Produkt ist nicht verfügbar |
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JAN1N3822A-1 | Microchip Technology |
Description: DIODE ZENER 3.6V 1W DO41 |
Produkt ist nicht verfügbar |
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1N5804/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
Produkt ist nicht verfügbar |
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1N5804E3 | Microchip Technology |
Description: DIODE GEN PURP 100V 1A A AXIAL Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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JAN1N5804/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 2.5A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 2.5A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: MIL-PRF-19500/477 |
Produkt ist nicht verfügbar |
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JANTX1N5804/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: MIL-PRF-19500/477 |
Produkt ist nicht verfügbar |
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JANTX1N5804US/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 1A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: MIL-PRF-19500/477 |
Produkt ist nicht verfügbar |
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1N5804USE3 | Microchip Technology |
Description: DIODE GEN PURP 100V 1A A SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
Produkt ist nicht verfügbar |
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1N5804US/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 1A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
Produkt ist nicht verfügbar |
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1N5804USE3/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 1A A SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
Produkt ist nicht verfügbar |
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JANTXV1N5804/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: MIL-PRF-19500/477 |
Produkt ist nicht verfügbar |
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JAN1N5804US/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 2.5A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 2.5A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: MIL-PRF-19500/477 |
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JANTXV1N5804US/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 1A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: MIL-PRF-19500/477 |
Produkt ist nicht verfügbar |
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| JANHCE1N5804 | Microchip Technology |
Description: DIODE GEN PURP 100V 1A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Die Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: MIL-PRF-19500/477 |
Produkt ist nicht verfügbar |
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| JANKCE1N5804 | Microchip Technology |
Description: DIODE GEN PURP 100V 1A DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Die Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: MIL-PRF-19500/477 |
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JANS1N5804 | Microchip Technology |
Description: DIODE GEN PURP 100V 2A A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A Qualification: MIL-PRF-19500/477 |
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JANS1N5804/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 2A A AXIAL Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A Qualification: MIL-PRF-19500/477 |
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JANS1N5804US | Microchip Technology |
Description: DIODE GEN PURP 100V 1A A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V Qualification: MIL-PRF-19500/477 |
Produkt ist nicht verfügbar |
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JANS1N5804US/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 1A A AXIAL Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V Qualification: MIL-PRF-19500/477 |
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JANS1N5804URS | Microchip Technology |
Description: DIODE GEN PURP 100V 2A A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A Qualification: MIL-PRF-19500/477 |
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| 2N2405 | Microchip Technology |
Description: TRANSISTOR POWER BJT Packaging: Bulk Part Status: Active |
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MPLAD6.5KP43A/TR | Microchip Technology | Description: TVS DIODE 43VWM 69.4VC PLAD |
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| MPLAD7.5KP43AE3 | Microchip Technology |
Description: TVS DIODE |
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| MPLAD7.5KP43AE3/TR | Microchip Technology |
Description: TVS DIODE 43VWM 69.4VC MINI-PLAD |
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| MPLAD7.5KP43A | Microchip Technology |
Description: TVS DIODE |
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M5KP43Ae3 | Microchip Technology |
Description: TVS DIODE 43VWM 69.4VC DO204AR |
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| MAPLAD6.5KP43Ae3 | Microchip Technology |
Description: TVS DIODE 43VWM 69.4VC MINI-PLAD |
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| MAPLAD6.5KP43A | Microchip Technology |
Description: TVS DIODE 43VWM 69.4VC MINI-PLAD |
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| MAPLAD7.5KP43AE3 | Microchip Technology |
Description: TVS DIODE |
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| MAPLAD7.5KP43A | Microchip Technology |
Description: TVS DIODE |
Produkt ist nicht verfügbar |
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| MXLPLAD7.5KP43AE3 | Microchip Technology |
Description: TVS DIODE |
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MA5KP43A | Microchip Technology |
Description: TVS DIODE 43VWM 69.4VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 72A Voltage - Reverse Standoff (Typ): 43V Supplier Device Package: DO-204AR Unidirectional Channels: 1 Voltage - Breakdown (Min): 47.8V Voltage - Clamping (Max) @ Ipp: 69.4V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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MA5KP43Ae3 | Microchip Technology |
Description: TVS DIODE 43VWM 69.4VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 72A Voltage - Reverse Standoff (Typ): 43V Supplier Device Package: DO-204AR Unidirectional Channels: 1 Voltage - Breakdown (Min): 47.8V Voltage - Clamping (Max) @ Ipp: 69.4V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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| MXPLAD6.5KP43Ae3 | Microchip Technology |
Description: TVS DIODE 43VWM 69.4VC PLAD |
Produkt ist nicht verfügbar |
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| MXPLAD7.5KP43AE3 | Microchip Technology |
Description: TVS DIODE |
Produkt ist nicht verfügbar |
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| MIC2545A-2BM TR | Microchip Technology |
Description: PROGRAMMABLE CURRENT-LIMIT HIGH- Features: Slew Rate Controlled, Status Flag Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 35mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SOIC Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current Part Status: Active |
auf Bestellung 72500 Stücke: Lieferzeit 10-14 Tag (e) |
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MIC2545A-2BMTR | Microchip Technology |
Description: CURRENT LIMIT HIGH-SIDE SWITCH Features: Slew Rate Controlled, Status Flag Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 35mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SOIC Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current Part Status: Active |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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MIC2545A-2BM | Microchip Technology |
Description: PROGRAMMABLE HIGH-SIDE SWITCH Features: Slew Rate Controlled, Status Flag Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 35mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SOIC Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current Part Status: Obsolete |
auf Bestellung 43429 Stücke: Lieferzeit 10-14 Tag (e) |
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| JAN1N6321 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 7.5V 500MW DO35
Description: DIODE ZENER 7.5V 500MW DO35
Produkt ist nicht verfügbar
| JAN1N6322 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 8.2V 500MW DO35
Description: DIODE ZENER 8.2V 500MW DO35
Produkt ist nicht verfügbar
| JAN1N6323 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 9.1V 500MW DO35
Description: DIODE ZENER 9.1V 500MW DO35
Produkt ist nicht verfügbar
| JAN1N6324 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 10V 500MW DO35
Description: DIODE ZENER 10V 500MW DO35
Produkt ist nicht verfügbar
| JAN1N6325 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 11V 500MW DO35
Description: DIODE ZENER 11V 500MW DO35
Produkt ist nicht verfügbar
| JAN1N6327 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 13V 500MW DO35
Description: DIODE ZENER 13V 500MW DO35
Produkt ist nicht verfügbar
| USB7050T/KDX |
Hersteller: Microchip Technology
Description: 4 PORT USB3.1 GEN1 - PD UPSTREAM
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: 4 PORT USB3.1 GEN1 - PD UPSTREAM
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 11.81 EUR |
| USB7050T/KDX |
Hersteller: Microchip Technology
Description: 4 PORT USB3.1 GEN1 - PD UPSTREAM
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Description: 4 PORT USB3.1 GEN1 - PD UPSTREAM
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 15.61 EUR |
| 25+ | 12.99 EUR |
| 100+ | 11.81 EUR |
| USB7050-I/KDX |
Hersteller: Microchip Technology
Description: 4 PORT USB3.1 GEN1 - PD UPSTREAM
Packaging: Tray
DigiKey Programmable: Not Verified
Description: 4 PORT USB3.1 GEN1 - PD UPSTREAM
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 130 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 19.27 EUR |
| 1N1124 |
|
Hersteller: Microchip Technology
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
| 1N1124A |
|
Hersteller: Microchip Technology
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3.3A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3.3A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
| 1N1124RA |
|
Hersteller: Microchip Technology
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 3.3A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 3.3A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
| JAN1N1124RA |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: MIL-PRF-19500/260
Description: DIODE GEN PURP 200V DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: MIL-PRF-19500/260
Produkt ist nicht verfügbar
| JAN1N1124A |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: MIL-PRF-19500/260
Description: DIODE GEN PURP 200V DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: MIL-PRF-19500/260
Produkt ist nicht verfügbar
| MSMCJ6.0Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 6VWM 10.3VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 145.6A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 6VWM 10.3VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 145.6A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
| MSMCJ6.0AE3/TR |
|
Hersteller: Microchip Technology
Description: TVS DIODE 6VWM 10.3VC SMCJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 145.6A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 6VWM 10.3VC SMCJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 145.6A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
| MSMCJ6.0A/TR |
|
Hersteller: Microchip Technology
Description: TVS DIODE 6VWM 10.3VC SMCJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 145.6A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 6VWM 10.3VC SMCJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 145.6A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
| MASMCJ6.0A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 6VWM 10.3VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 145.6A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 6VWM 10.3VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 145.6A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
| MX553EBF125M000-TR |
|
Hersteller: Microchip Technology
Description: XTAL OSC XO 125.0000MHZ LVPECL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.375V ~ 3.63V
Current - Supply (Max): 120mA
Height - Seated (Max): 0.055" (1.40mm)
Frequency: 125 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 125.0000MHZ LVPECL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.375V ~ 3.63V
Current - Supply (Max): 120mA
Height - Seated (Max): 0.055" (1.40mm)
Frequency: 125 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
| MX553EBF125M000 |
|
Hersteller: Microchip Technology
Description: XTAL OSC XO 125.0000MHZ LVPECL
Description: XTAL OSC XO 125.0000MHZ LVPECL
Produkt ist nicht verfügbar
| JAN1N3822A-1 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 3.6V 1W DO41
Description: DIODE ZENER 3.6V 1W DO41
Produkt ist nicht verfügbar
| 1N5804/TR |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Description: DIODE GEN PURP 100V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar
| 1N5804E3 |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 1A A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Description: DIODE GEN PURP 100V 1A A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)| JAN1N5804/TR |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 2.5A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 2.5A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
| JANTX1N5804/TR |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
| JANTX1N5804US/TR |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
| 1N5804USE3 |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Description: DIODE GEN PURP 100V 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar
| 1N5804US/TR |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Description: DIODE GEN PURP 100V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar
| 1N5804USE3/TR |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Description: DIODE GEN PURP 100V 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar
| JANTXV1N5804/TR |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
| JAN1N5804US/TR |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 2.5A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 2.5A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
| JANTXV1N5804US/TR |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
| JANHCE1N5804 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 1A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 1A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
| JANKCE1N5804 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 1A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 1A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
| JANS1N5804 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 2A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 2A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
| JANS1N5804/TR |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 2A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 2A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
| JANS1N5804US |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
| JANS1N5804US/TR |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
| JANS1N5804URS |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 2A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 2A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
| 2N2405 |
Produkt ist nicht verfügbar
| MPLAD6.5KP43A/TR |
Hersteller: Microchip Technology
Description: TVS DIODE 43VWM 69.4VC PLAD
Description: TVS DIODE 43VWM 69.4VC PLAD
Produkt ist nicht verfügbar
| MPLAD7.5KP43AE3/TR |
|
Hersteller: Microchip Technology
Description: TVS DIODE 43VWM 69.4VC MINI-PLAD
Description: TVS DIODE 43VWM 69.4VC MINI-PLAD
Produkt ist nicht verfügbar
| M5KP43Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 43VWM 69.4VC DO204AR
Description: TVS DIODE 43VWM 69.4VC DO204AR
Produkt ist nicht verfügbar
| MAPLAD6.5KP43Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 43VWM 69.4VC MINI-PLAD
Description: TVS DIODE 43VWM 69.4VC MINI-PLAD
Produkt ist nicht verfügbar
| MAPLAD6.5KP43A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 43VWM 69.4VC MINI-PLAD
Description: TVS DIODE 43VWM 69.4VC MINI-PLAD
Produkt ist nicht verfügbar
| MXLPLAD7.5KP43AE3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE
Description: TVS DIODE
Produkt ist nicht verfügbar
| MA5KP43A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 43VWM 69.4VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 72A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 43VWM 69.4VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 72A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
| MA5KP43Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 43VWM 69.4VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 72A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 43VWM 69.4VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 72A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
| MXPLAD6.5KP43Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 43VWM 69.4VC PLAD
Description: TVS DIODE 43VWM 69.4VC PLAD
Produkt ist nicht verfügbar
| MIC2545A-2BM TR |
|
Hersteller: Microchip Technology
Description: PROGRAMMABLE CURRENT-LIMIT HIGH-
Features: Slew Rate Controlled, Status Flag
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current
Part Status: Active
Description: PROGRAMMABLE CURRENT-LIMIT HIGH-
Features: Slew Rate Controlled, Status Flag
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current
Part Status: Active
auf Bestellung 72500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 314+ | 1.69 EUR |
| MIC2545A-2BMTR |
|
Hersteller: Microchip Technology
Description: CURRENT LIMIT HIGH-SIDE SWITCH
Features: Slew Rate Controlled, Status Flag
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current
Part Status: Active
Description: CURRENT LIMIT HIGH-SIDE SWITCH
Features: Slew Rate Controlled, Status Flag
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 340+ | 1.45 EUR |
| MIC2545A-2BM |
|
Hersteller: Microchip Technology
Description: PROGRAMMABLE HIGH-SIDE SWITCH
Features: Slew Rate Controlled, Status Flag
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current
Part Status: Obsolete
Description: PROGRAMMABLE HIGH-SIDE SWITCH
Features: Slew Rate Controlled, Status Flag
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current
Part Status: Obsolete
auf Bestellung 43429 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 336+ | 1.47 EUR |