Produkte > INTERNATIONAL RECTIFIER > Alle Produkte des Herstellers INTERNATIONAL RECTIFIER (1374) > Seite 11 nach 23
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRF7406HR | International Rectifier | Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
IRF7413 | International Rectifier | Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R |
auf Bestellung 7377 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
IRF7413ZTR | International Rectifier |
Transistor N-Channel MOSFET; 30V; 20V; 13mOhm; 13A; 2,5W; -55°C ~ 150°C; IRF7413Z smd TIRF7413z Anzahl je Verpackung: 10 Stücke |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
IRF7424 | International Rectifier |
P-MOSFET 11A 30V 2.5W 13.5mΩ IRF7424 TIRF7424 Anzahl je Verpackung: 95 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
IRF7425TR | International Rectifier |
Transistor P-Channel MOSFET; 20V; 12V; 13mOhm; 15A; 2,5W; -55°C ~ 150°C; Replacement: IRF7220; IRF7220; IRF7425TR; IRF7425; IRF7425-GURT; IRF7425TR-VB; IRF7425; IRF7425TR-VB; IRF7425TR TIRF7425 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 499 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
IRF7450 | International Rectifier |
Transistor N-Channel MOSFET; 200V; 30V; 170mOhm; 2,5A; 2,5W; -55°C ~ 150°C; IRF7450 TIRF7450 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
IRF7450PBF | International Rectifier |
Description: SMPS HEXFET POWER MOSFET Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 1.5A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
IRF7455TR | International Rectifier |
N-MOSFET 15A 30V 2.5W 0.075Ω Replacement: IRF7455TR; IRF7455 smd TIRF7455 Anzahl je Verpackung: 15 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
IRF7457PBF | International Rectifier |
Description: SMPS HEXFET POWER MOSFET Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 10 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
IRF7464 | International Rectifier |
N-MOSFET 1.2A 200V 2.5W 0.73Ω IRF7464 smd TIRF7464 Anzahl je Verpackung: 95 Stücke |
auf Bestellung 95 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
IRF7465 | International Rectifier |
N-MOSFET 1.9A 150V 2.5W 0.28Ω IRF7465 TIRF7465 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
IRF7468PBF | International Rectifier | Description: MOSFET N-CH 40V 9.4A 8SO |
Produkt ist nicht verfügbar |
||||||||||||||||||
IRF7468TRPBF | International Rectifier |
Description: SMPS HEXFET POWER MOSFET Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9.4A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 20 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
IRF7469PBF | International Rectifier |
Description: MOSFET Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
IRF7470TRPBF | International Rectifier |
Description: IRF7470 - 12V-300V N-CHANNEL POW Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 20 V |
auf Bestellung 1278 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IRF7473 | International Rectifier | Trans MOSFET N-CH 100V 6.9A 8-Pin SOIC T/R |
auf Bestellung 137 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
IRF7478TR | International Rectifier |
Transistor N-Channel MOSFET; 60V; 20V; 30mOhm; 7A; 2,5W; -55°C ~ 150°C; Replacement: IRF7478; IRF7478TR; IRF7478-GURT; Obsolete; IRF7478; IRF7478TR TIRF7478 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 180 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
IRF7483MTRPBF | International Rectifier |
Description: MOSFET N-CH 40V 135A DIRECTFET Packaging: Bulk Package / Case: DirectFET™ Isometric MF Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 135A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: DirectFET™ Isometric MF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V |
auf Bestellung 12511 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IRF7493 | International Rectifier |
N-MOSFET HEXFET 80V 7,4A 2.5W 0,015Ω IRF7493 TIRF7493 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
IRF7494TR | INTERNATIONAL RECTIFIER | MOSFET N-CH 150V 5.2A 8-SOIC |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
IRF7494TRHR | International Rectifier | Trans MOSFET N-CH 150V 5.2A 8-Pin SOIC T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
IRF7494TRHR | International Rectifier | Trans MOSFET N-CH 150V 5.2A 8-Pin SOIC T/R |
auf Bestellung 719 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
IRF7495 | International Rectifier | Trans MOSFET N-CH 100V 7.3A 8-Pin SOIC T/R |
auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
IRF7503TR | International Rectifier |
Transistor 2xN-Channel MOSFET; 30V; 20V; 222mOhm; 2,4A; 1,25W; -55°C ~ 150°C; IRF7503 TIRF7503 Anzahl je Verpackung: 25 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
IRF7580MTRPBF | International Rectifier |
Description: IRF7580 - 12V-300V N-CHANNEL POW Packaging: Bulk Package / Case: DirectFET™ Isometric ME Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 114A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 70A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 150µA Supplier Device Package: DirectFET™ Isometric ME Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 25 V |
auf Bestellung 7423 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IRF7601TR | International Rectifier |
Trans MOSFET N-CH Si 20V 5.7A IRF7601 IRF7601TR IRF7601 TIRF7601 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
IRF7606 | International Rectifier |
Transistor P-Channel MOSFET; 30V; 20V; 150mOhm; 3,6A; 1,8W; -55°C ~ 150°C; IRF7606 smd TIRF7606 Anzahl je Verpackung: 50 Stücke |
auf Bestellung 45 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
IRF7665S2TRPBF | International Rectifier |
Description: MOSFET NCH 100V 4.1/14.4A DIRECT Packaging: Bulk Package / Case: DirectFET™ Isometric SB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc) Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V Power Dissipation (Max): 2.4W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 5V @ 25µA Supplier Device Package: DirectFET™ Isometric SB Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 25 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
IRF7805TRPBF | International Rectifier |
Description: PFET, 30V, 0.011OHM, 1OXIDE SEMI Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V |
auf Bestellung 1900 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IRF7807TR | International Rectifier |
Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC IRF7807 IRF7807TR SP001570502 IRF7807 TIRF7807 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
IRF7807ZPBFPRO | International Rectifier |
Description: HEXFET N-CHANNEL POWER MOSFET Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
||||||||||||||||||
IRF7807ZTR | International Rectifier |
Trans MOSFET N-CH 30V 11A 8-Pin SOIC IRF7807ZTR IRF7807Z TIRF7807z Anzahl je Verpackung: 10 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
IRF7807ZTRPBF | INTERNATIONAL RECTIFIER | MOSFET N-CH 30V 11A 8-SOIC |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
IRF7820TR | International Rectifier |
Transistor N-Channel MOSFET; 200V; 20V; 78mOhm; 3,7A; 2,5W; -55°C ~ 150°C; IRF7820 TIRF7820 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
IRF7821HR | International Rectifier | Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC T/R |
auf Bestellung 13015 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
IRF7832HR | International Rectifier | Trans MOSFET N-CH 30V 20A 8-Pin SOIC T/R |
auf Bestellung 12290 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
IRF7832TR | International Rectifier |
Transistor N-Channel MOSFET; 30V; 20V; 4,8mOhm; 20A; 2,5W; -55°C ~ 155°C; IRF7832 smd TIRF7832 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
IRF7853TR | International Rectifier | Transistor N-Channel MOSFET; 100V; 20V; 18mOhm; 8,3A; 2,5W; -55°C ~ 150°C; Replacement: IRF7853; IRF7853TR; IRF7853TR TIRF7853 |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
||||||||||||||||||
IRF7853TR | International Rectifier |
Transistor N-Channel MOSFET; 100V; 20V; 18mOhm; 8,3A; 2,5W; -55°C ~ 150°C; Replacement: IRF7853; IRF7853TR; IRF7853TR TIRF7853 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
IRF7854 | International Rectifier |
N-MOSFET HEXFET 10A 80V 2.5W 0.0134Ω IRF7854 TIRF7854 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 28 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
IRF7855PBF | International Rectifier |
Description: MOSFET N-CH 60V 12A 8SO Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 12A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4.9V @ 100µA Supplier Device Package: 8-SO Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
IRF8010 | International Rectifier |
N-MOSFET HEXFET 80A 100V 260W 0.015Ω IRF8010 TIRF8010 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 147 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
IRF8010HR | International Rectifier | Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 9543 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
IRF8113PBF | International Rectifier |
Description: HEXFET POWER MOSFET Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
IRF8308MTRPBF | International Rectifier |
Description: TRENCH MOSFET - DIRECTFET MV Packaging: Bulk Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: DIRECTFET™ MX Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4404 pF @ 15 V |
auf Bestellung 10644 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IRF8327STRPBF | International Rectifier |
Description: MOSFET N-CH 30V 14A/60A DIRECTFT Packaging: Bulk Package / Case: DirectFET™ Isometric SQ Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 14A, 10V Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 25µA Supplier Device Package: DIRECTFET™ SQ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 15 V |
auf Bestellung 4538 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IRF8707TR | International Rectifier |
Transistor N-MOSFET; 30V; 20V; 11,9mOhm; 11A; 2,5W; -55°C~150°C; Substitute: IRF8707TR; IRF8707-GURT; IRF8707; IRF8707 TIRF8707 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 78 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
IRF8734TR (IRF7834 printing) | International Rectifier |
Transistor N-Channel MOSFET; 30V; 20V; 5,1mOhm; 21A; 2,5W; -55°C ~ 150°C; Replacement: IRF8734; IRF8734TR; SP001555800; IRF8734; IRF8734TR TIRF8734 Anzahl je Verpackung: 50 Stücke |
auf Bestellung 600 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
IRF8734TR (IRF7834 printing) | International Rectifier |
Transistor N-Channel MOSFET; 30V; 20V; 5,1mOhm; 21A; 2,5W; -55°C ~ 150°C; Replacement: IRF8734; IRF8734TR; SP001555800; IRF8734; IRF8734TR TIRF8734 Anzahl je Verpackung: 50 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
IRF8736 | International Rectifier |
N-MOSFET 30V 18A IRF8736 TIRF8736 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 162 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
IRF8910TR | International Rectifier |
N-MOSFET HEXFET 10A 20V 2W 0.0134Ω IRF8910 TIRF8910 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
IRF8915PBF | International Rectifier |
Description: HEXFET POWER MOSFET Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.9A Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V Rds On (Max) @ Id, Vgs: 18.3mOhm @ 8.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
Produkt ist nicht verfügbar |
||||||||||||||||||
IRF9130CECC | International Rectifier |
Description: IRF9100P-CHANNREPETITIAVALANCADV Packaging: Bulk |
Produkt ist nicht verfügbar |
||||||||||||||||||
IRF9133 | International Rectifier |
Description: AUTOMOTIVE HEXFET P-CHANNEL POWE Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A Power Dissipation (Max): 88W Supplier Device Package: TO-204AA (TO-3) Part Status: Active Drain to Source Voltage (Vdss): 80 V |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IRF9143 | International Rectifier |
Description: MOSFET P-CH 80V 15A TO204AE Packaging: Bulk Package / Case: TO-204AE Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A FET Feature: Standard Power Dissipation (Max): 125W Supplier Device Package: TO-204AE Part Status: Active Drain to Source Voltage (Vdss): 80 V |
auf Bestellung 80 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IRF9230 | International Rectifier |
Description: 200V, P-CHANNEL REPETITIVE AVALA Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 940mOhm @ 6.5A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-204AA (TO-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
auf Bestellung 10200 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IRF9231 | International Rectifier |
Description: 6.5A, 150V, 0.8OHM, P-CHANNEL PO Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A Power Dissipation (Max): 75W Supplier Device Package: TO-204AA (TO-3) Part Status: Active Drain to Source Voltage (Vdss): 150 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
IRF9232 | International Rectifier |
Description: 5.52001.2OHP-CHANNPOWMOSFET Packaging: Bulk |
Produkt ist nicht verfügbar |
||||||||||||||||||
IRF9233 | International Rectifier |
Description: MOSFET P-CH 150V 5.5A TO204AE Packaging: Bulk Package / Case: TO-204AE Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A Power Dissipation (Max): 75W Supplier Device Package: TO-204AE Part Status: Active Drain to Source Voltage (Vdss): 150 V |
auf Bestellung 301 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IRF9240 | International Rectifier |
Description: HEXFET POWER MOSFET Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 580mOhm @ 11A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-204AA (TO-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
auf Bestellung 10984 Stücke: Lieferzeit 10-14 Tag (e) |
|
IRF7406HR |
Hersteller: International Rectifier
Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N T/R
Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N T/R
Produkt ist nicht verfügbar
IRF7413 |
Hersteller: International Rectifier
Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R
Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R
auf Bestellung 7377 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 6.3 EUR |
39+ | 3.85 EUR |
100+ | 2.78 EUR |
500+ | 2.14 EUR |
1000+ | 1.98 EUR |
2500+ | 1.82 EUR |
5000+ | 1.68 EUR |
IRF7413ZTR |
Hersteller: International Rectifier
Transistor N-Channel MOSFET; 30V; 20V; 13mOhm; 13A; 2,5W; -55°C ~ 150°C; IRF7413Z smd TIRF7413z
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 30V; 20V; 13mOhm; 13A; 2,5W; -55°C ~ 150°C; IRF7413Z smd TIRF7413z
Anzahl je Verpackung: 10 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 1.71 EUR |
IRF7424 |
Hersteller: International Rectifier
P-MOSFET 11A 30V 2.5W 13.5mΩ IRF7424 TIRF7424
Anzahl je Verpackung: 95 Stücke
P-MOSFET 11A 30V 2.5W 13.5mΩ IRF7424 TIRF7424
Anzahl je Verpackung: 95 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
95+ | 2.11 EUR |
IRF7425TR |
Hersteller: International Rectifier
Transistor P-Channel MOSFET; 20V; 12V; 13mOhm; 15A; 2,5W; -55°C ~ 150°C; Replacement: IRF7220; IRF7220; IRF7425TR; IRF7425; IRF7425-GURT; IRF7425TR-VB; IRF7425; IRF7425TR-VB; IRF7425TR TIRF7425
Anzahl je Verpackung: 10 Stücke
Transistor P-Channel MOSFET; 20V; 12V; 13mOhm; 15A; 2,5W; -55°C ~ 150°C; Replacement: IRF7220; IRF7220; IRF7425TR; IRF7425; IRF7425-GURT; IRF7425TR-VB; IRF7425; IRF7425TR-VB; IRF7425TR TIRF7425
Anzahl je Verpackung: 10 Stücke
auf Bestellung 499 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 2.18 EUR |
IRF7450 |
Hersteller: International Rectifier
Transistor N-Channel MOSFET; 200V; 30V; 170mOhm; 2,5A; 2,5W; -55°C ~ 150°C; IRF7450 TIRF7450
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 200V; 30V; 170mOhm; 2,5A; 2,5W; -55°C ~ 150°C; IRF7450 TIRF7450
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 1.51 EUR |
IRF7450PBF |
Hersteller: International Rectifier
Description: SMPS HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
Description: SMPS HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
Produkt ist nicht verfügbar
IRF7455TR |
Hersteller: International Rectifier
N-MOSFET 15A 30V 2.5W 0.075Ω Replacement: IRF7455TR; IRF7455 smd TIRF7455
Anzahl je Verpackung: 15 Stücke
N-MOSFET 15A 30V 2.5W 0.075Ω Replacement: IRF7455TR; IRF7455 smd TIRF7455
Anzahl je Verpackung: 15 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 2.58 EUR |
IRF7457PBF |
Hersteller: International Rectifier
Description: SMPS HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 10 V
Description: SMPS HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 10 V
Produkt ist nicht verfügbar
IRF7464 |
Hersteller: International Rectifier
N-MOSFET 1.2A 200V 2.5W 0.73Ω IRF7464 smd TIRF7464
Anzahl je Verpackung: 95 Stücke
N-MOSFET 1.2A 200V 2.5W 0.73Ω IRF7464 smd TIRF7464
Anzahl je Verpackung: 95 Stücke
auf Bestellung 95 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
95+ | 1 EUR |
IRF7465 |
Hersteller: International Rectifier
N-MOSFET 1.9A 150V 2.5W 0.28Ω IRF7465 TIRF7465
Anzahl je Verpackung: 10 Stücke
N-MOSFET 1.9A 150V 2.5W 0.28Ω IRF7465 TIRF7465
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 1.46 EUR |
IRF7468PBF |
Hersteller: International Rectifier
Description: MOSFET N-CH 40V 9.4A 8SO
Description: MOSFET N-CH 40V 9.4A 8SO
Produkt ist nicht verfügbar
IRF7468TRPBF |
Hersteller: International Rectifier
Description: SMPS HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9.4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 20 V
Description: SMPS HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9.4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 20 V
Produkt ist nicht verfügbar
IRF7469PBF |
Hersteller: International Rectifier
Description: MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Description: MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Produkt ist nicht verfügbar
IRF7470TRPBF |
Hersteller: International Rectifier
Description: IRF7470 - 12V-300V N-CHANNEL POW
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 20 V
Description: IRF7470 - 12V-300V N-CHANNEL POW
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 20 V
auf Bestellung 1278 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
439+ | 1.07 EUR |
IRF7473 |
Hersteller: International Rectifier
Trans MOSFET N-CH 100V 6.9A 8-Pin SOIC T/R
Trans MOSFET N-CH 100V 6.9A 8-Pin SOIC T/R
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
77+ | 2 EUR |
106+ | 1.4 EUR |
IRF7478TR |
Hersteller: International Rectifier
Transistor N-Channel MOSFET; 60V; 20V; 30mOhm; 7A; 2,5W; -55°C ~ 150°C; Replacement: IRF7478; IRF7478TR; IRF7478-GURT; Obsolete; IRF7478; IRF7478TR TIRF7478
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 60V; 20V; 30mOhm; 7A; 2,5W; -55°C ~ 150°C; Replacement: IRF7478; IRF7478TR; IRF7478-GURT; Obsolete; IRF7478; IRF7478TR TIRF7478
Anzahl je Verpackung: 10 Stücke
auf Bestellung 180 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 2.57 EUR |
IRF7483MTRPBF |
Hersteller: International Rectifier
Description: MOSFET N-CH 40V 135A DIRECTFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: DirectFET™ Isometric MF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V
Description: MOSFET N-CH 40V 135A DIRECTFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: DirectFET™ Isometric MF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V
auf Bestellung 12511 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
302+ | 1.57 EUR |
IRF7493 |
Hersteller: International Rectifier
N-MOSFET HEXFET 80V 7,4A 2.5W 0,015Ω IRF7493 TIRF7493
Anzahl je Verpackung: 10 Stücke
N-MOSFET HEXFET 80V 7,4A 2.5W 0,015Ω IRF7493 TIRF7493
Anzahl je Verpackung: 10 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 2.91 EUR |
IRF7494TR |
Hersteller: INTERNATIONAL RECTIFIER
MOSFET N-CH 150V 5.2A 8-SOIC
MOSFET N-CH 150V 5.2A 8-SOIC
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 14.21 EUR |
IRF7494TRHR |
Hersteller: International Rectifier
Trans MOSFET N-CH 150V 5.2A 8-Pin SOIC T/R
Trans MOSFET N-CH 150V 5.2A 8-Pin SOIC T/R
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 1.88 EUR |
IRF7494TRHR |
Hersteller: International Rectifier
Trans MOSFET N-CH 150V 5.2A 8-Pin SOIC T/R
Trans MOSFET N-CH 150V 5.2A 8-Pin SOIC T/R
auf Bestellung 719 Stücke:
Lieferzeit 14-21 Tag (e)IRF7495 |
Hersteller: International Rectifier
Trans MOSFET N-CH 100V 7.3A 8-Pin SOIC T/R
Trans MOSFET N-CH 100V 7.3A 8-Pin SOIC T/R
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 7.43 EUR |
25+ | 6.32 EUR |
IRF7503TR |
Hersteller: International Rectifier
Transistor 2xN-Channel MOSFET; 30V; 20V; 222mOhm; 2,4A; 1,25W; -55°C ~ 150°C; IRF7503 TIRF7503
Anzahl je Verpackung: 25 Stücke
Transistor 2xN-Channel MOSFET; 30V; 20V; 222mOhm; 2,4A; 1,25W; -55°C ~ 150°C; IRF7503 TIRF7503
Anzahl je Verpackung: 25 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 0.85 EUR |
IRF7580MTRPBF |
Hersteller: International Rectifier
Description: IRF7580 - 12V-300V N-CHANNEL POW
Packaging: Bulk
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 70A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 25 V
Description: IRF7580 - 12V-300V N-CHANNEL POW
Packaging: Bulk
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 70A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 25 V
auf Bestellung 7423 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
239+ | 1.99 EUR |
IRF7601TR |
Hersteller: International Rectifier
Trans MOSFET N-CH Si 20V 5.7A IRF7601 IRF7601TR IRF7601 TIRF7601
Anzahl je Verpackung: 10 Stücke
Trans MOSFET N-CH Si 20V 5.7A IRF7601 IRF7601TR IRF7601 TIRF7601
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 0.68 EUR |
IRF7606 |
Hersteller: International Rectifier
Transistor P-Channel MOSFET; 30V; 20V; 150mOhm; 3,6A; 1,8W; -55°C ~ 150°C; IRF7606 smd TIRF7606
Anzahl je Verpackung: 50 Stücke
Transistor P-Channel MOSFET; 30V; 20V; 150mOhm; 3,6A; 1,8W; -55°C ~ 150°C; IRF7606 smd TIRF7606
Anzahl je Verpackung: 50 Stücke
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 0.68 EUR |
IRF7665S2TRPBF |
Hersteller: International Rectifier
Description: MOSFET NCH 100V 4.1/14.4A DIRECT
Packaging: Bulk
Package / Case: DirectFET™ Isometric SB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: DirectFET™ Isometric SB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 25 V
Description: MOSFET NCH 100V 4.1/14.4A DIRECT
Packaging: Bulk
Package / Case: DirectFET™ Isometric SB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: DirectFET™ Isometric SB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 25 V
Produkt ist nicht verfügbar
IRF7805TRPBF |
Hersteller: International Rectifier
Description: PFET, 30V, 0.011OHM, 1OXIDE SEMI
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Description: PFET, 30V, 0.011OHM, 1OXIDE SEMI
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
607+ | 0.79 EUR |
IRF7807TR |
Hersteller: International Rectifier
Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC IRF7807 IRF7807TR SP001570502 IRF7807 TIRF7807
Anzahl je Verpackung: 10 Stücke
Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC IRF7807 IRF7807TR SP001570502 IRF7807 TIRF7807
Anzahl je Verpackung: 10 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 2.25 EUR |
IRF7807ZPBFPRO |
Hersteller: International Rectifier
Description: HEXFET N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Description: HEXFET N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
IRF7807ZTR |
Hersteller: International Rectifier
Trans MOSFET N-CH 30V 11A 8-Pin SOIC IRF7807ZTR IRF7807Z TIRF7807z
Anzahl je Verpackung: 10 Stücke
Trans MOSFET N-CH 30V 11A 8-Pin SOIC IRF7807ZTR IRF7807Z TIRF7807z
Anzahl je Verpackung: 10 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 1.15 EUR |
IRF7807ZTRPBF |
Hersteller: INTERNATIONAL RECTIFIER
MOSFET N-CH 30V 11A 8-SOIC
MOSFET N-CH 30V 11A 8-SOIC
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 3.66 EUR |
IRF7820TR |
Hersteller: International Rectifier
Transistor N-Channel MOSFET; 200V; 20V; 78mOhm; 3,7A; 2,5W; -55°C ~ 150°C; IRF7820 TIRF7820
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 200V; 20V; 78mOhm; 3,7A; 2,5W; -55°C ~ 150°C; IRF7820 TIRF7820
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 2.21 EUR |
IRF7821HR |
Hersteller: International Rectifier
Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC T/R
Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC T/R
auf Bestellung 13015 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
310+ | 0.49 EUR |
344+ | 0.43 EUR |
599+ | 0.24 EUR |
685+ | 0.2 EUR |
1000+ | 0.15 EUR |
2500+ | 0.14 EUR |
5000+ | 0.13 EUR |
10000+ | 0.12 EUR |
IRF7832HR |
Hersteller: International Rectifier
Trans MOSFET N-CH 30V 20A 8-Pin SOIC T/R
Trans MOSFET N-CH 30V 20A 8-Pin SOIC T/R
auf Bestellung 12290 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
73+ | 2.09 EUR |
82+ | 1.81 EUR |
141+ | 1.01 EUR |
500+ | 0.85 EUR |
1000+ | 0.64 EUR |
2500+ | 0.59 EUR |
5000+ | 0.55 EUR |
10000+ | 0.53 EUR |
IRF7832TR |
Hersteller: International Rectifier
Transistor N-Channel MOSFET; 30V; 20V; 4,8mOhm; 20A; 2,5W; -55°C ~ 155°C; IRF7832 smd TIRF7832
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 30V; 20V; 4,8mOhm; 20A; 2,5W; -55°C ~ 155°C; IRF7832 smd TIRF7832
Anzahl je Verpackung: 10 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 3.15 EUR |
IRF7853TR |
Hersteller: International Rectifier
Transistor N-Channel MOSFET; 100V; 20V; 18mOhm; 8,3A; 2,5W; -55°C ~ 150°C; Replacement: IRF7853; IRF7853TR; IRF7853TR TIRF7853
Transistor N-Channel MOSFET; 100V; 20V; 18mOhm; 8,3A; 2,5W; -55°C ~ 150°C; Replacement: IRF7853; IRF7853TR; IRF7853TR TIRF7853
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)IRF7853TR |
Hersteller: International Rectifier
Transistor N-Channel MOSFET; 100V; 20V; 18mOhm; 8,3A; 2,5W; -55°C ~ 150°C; Replacement: IRF7853; IRF7853TR; IRF7853TR TIRF7853
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 100V; 20V; 18mOhm; 8,3A; 2,5W; -55°C ~ 150°C; Replacement: IRF7853; IRF7853TR; IRF7853TR TIRF7853
Anzahl je Verpackung: 10 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 2.91 EUR |
IRF7854 |
Hersteller: International Rectifier
N-MOSFET HEXFET 10A 80V 2.5W 0.0134Ω IRF7854 TIRF7854
Anzahl je Verpackung: 5 Stücke
N-MOSFET HEXFET 10A 80V 2.5W 0.0134Ω IRF7854 TIRF7854
Anzahl je Verpackung: 5 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 5.22 EUR |
IRF7855PBF |
Hersteller: International Rectifier
Description: MOSFET N-CH 60V 12A 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V
Description: MOSFET N-CH 60V 12A 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V
Produkt ist nicht verfügbar
IRF8010 |
Hersteller: International Rectifier
N-MOSFET HEXFET 80A 100V 260W 0.015Ω IRF8010 TIRF8010
Anzahl je Verpackung: 10 Stücke
N-MOSFET HEXFET 80A 100V 260W 0.015Ω IRF8010 TIRF8010
Anzahl je Verpackung: 10 Stücke
auf Bestellung 147 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 4.69 EUR |
IRF8010HR |
Hersteller: International Rectifier
Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 9543 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
202+ | 0.76 EUR |
224+ | 0.66 EUR |
391+ | 0.36 EUR |
500+ | 0.31 EUR |
1000+ | 0.23 EUR |
2500+ | 0.22 EUR |
5000+ | 0.2 EUR |
IRF8113PBF |
Hersteller: International Rectifier
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V
Produkt ist nicht verfügbar
IRF8308MTRPBF |
Hersteller: International Rectifier
Description: TRENCH MOSFET - DIRECTFET MV
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4404 pF @ 15 V
Description: TRENCH MOSFET - DIRECTFET MV
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4404 pF @ 15 V
auf Bestellung 10644 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
263+ | 1.83 EUR |
IRF8327STRPBF |
Hersteller: International Rectifier
Description: MOSFET N-CH 30V 14A/60A DIRECTFT
Packaging: Bulk
Package / Case: DirectFET™ Isometric SQ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 14A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: DIRECTFET™ SQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 15 V
Description: MOSFET N-CH 30V 14A/60A DIRECTFT
Packaging: Bulk
Package / Case: DirectFET™ Isometric SQ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 14A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: DIRECTFET™ SQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 15 V
auf Bestellung 4538 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
467+ | 1 EUR |
IRF8707TR |
Hersteller: International Rectifier
Transistor N-MOSFET; 30V; 20V; 11,9mOhm; 11A; 2,5W; -55°C~150°C; Substitute: IRF8707TR; IRF8707-GURT; IRF8707; IRF8707 TIRF8707
Anzahl je Verpackung: 10 Stücke
Transistor N-MOSFET; 30V; 20V; 11,9mOhm; 11A; 2,5W; -55°C~150°C; Substitute: IRF8707TR; IRF8707-GURT; IRF8707; IRF8707 TIRF8707
Anzahl je Verpackung: 10 Stücke
auf Bestellung 78 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 1.77 EUR |
IRF8734TR (IRF7834 printing) |
Hersteller: International Rectifier
Transistor N-Channel MOSFET; 30V; 20V; 5,1mOhm; 21A; 2,5W; -55°C ~ 150°C; Replacement: IRF8734; IRF8734TR; SP001555800; IRF8734; IRF8734TR TIRF8734
Anzahl je Verpackung: 50 Stücke
Transistor N-Channel MOSFET; 30V; 20V; 5,1mOhm; 21A; 2,5W; -55°C ~ 150°C; Replacement: IRF8734; IRF8734TR; SP001555800; IRF8734; IRF8734TR TIRF8734
Anzahl je Verpackung: 50 Stücke
auf Bestellung 600 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 1.48 EUR |
IRF8734TR (IRF7834 printing) |
Hersteller: International Rectifier
Transistor N-Channel MOSFET; 30V; 20V; 5,1mOhm; 21A; 2,5W; -55°C ~ 150°C; Replacement: IRF8734; IRF8734TR; SP001555800; IRF8734; IRF8734TR TIRF8734
Anzahl je Verpackung: 50 Stücke
Transistor N-Channel MOSFET; 30V; 20V; 5,1mOhm; 21A; 2,5W; -55°C ~ 150°C; Replacement: IRF8734; IRF8734TR; SP001555800; IRF8734; IRF8734TR TIRF8734
Anzahl je Verpackung: 50 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 1.48 EUR |
IRF8736 |
auf Bestellung 162 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 1.99 EUR |
IRF8910TR |
Hersteller: International Rectifier
N-MOSFET HEXFET 10A 20V 2W 0.0134Ω IRF8910 TIRF8910
Anzahl je Verpackung: 10 Stücke
N-MOSFET HEXFET 10A 20V 2W 0.0134Ω IRF8910 TIRF8910
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 1.44 EUR |
IRF8915PBF |
Hersteller: International Rectifier
Description: HEXFET POWER MOSFET
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8.9A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
Rds On (Max) @ Id, Vgs: 18.3mOhm @ 8.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Description: HEXFET POWER MOSFET
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8.9A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
Rds On (Max) @ Id, Vgs: 18.3mOhm @ 8.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
IRF9130CECC |
Produkt ist nicht verfügbar
IRF9133 |
Hersteller: International Rectifier
Description: AUTOMOTIVE HEXFET P-CHANNEL POWE
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Power Dissipation (Max): 88W
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Drain to Source Voltage (Vdss): 80 V
Description: AUTOMOTIVE HEXFET P-CHANNEL POWE
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Power Dissipation (Max): 88W
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Drain to Source Voltage (Vdss): 80 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
55+ | 8.83 EUR |
IRF9143 |
Hersteller: International Rectifier
Description: MOSFET P-CH 80V 15A TO204AE
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
FET Feature: Standard
Power Dissipation (Max): 125W
Supplier Device Package: TO-204AE
Part Status: Active
Drain to Source Voltage (Vdss): 80 V
Description: MOSFET P-CH 80V 15A TO204AE
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
FET Feature: Standard
Power Dissipation (Max): 125W
Supplier Device Package: TO-204AE
Part Status: Active
Drain to Source Voltage (Vdss): 80 V
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
80+ | 6.59 EUR |
IRF9230 |
Hersteller: International Rectifier
Description: 200V, P-CHANNEL REPETITIVE AVALA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 6.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Description: 200V, P-CHANNEL REPETITIVE AVALA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 6.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 10200 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
61+ | 8.01 EUR |
IRF9231 |
Hersteller: International Rectifier
Description: 6.5A, 150V, 0.8OHM, P-CHANNEL PO
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A
Power Dissipation (Max): 75W
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Drain to Source Voltage (Vdss): 150 V
Description: 6.5A, 150V, 0.8OHM, P-CHANNEL PO
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A
Power Dissipation (Max): 75W
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Drain to Source Voltage (Vdss): 150 V
Produkt ist nicht verfügbar
IRF9232 |
Produkt ist nicht verfügbar
IRF9233 |
Hersteller: International Rectifier
Description: MOSFET P-CH 150V 5.5A TO204AE
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A
Power Dissipation (Max): 75W
Supplier Device Package: TO-204AE
Part Status: Active
Drain to Source Voltage (Vdss): 150 V
Description: MOSFET P-CH 150V 5.5A TO204AE
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A
Power Dissipation (Max): 75W
Supplier Device Package: TO-204AE
Part Status: Active
Drain to Source Voltage (Vdss): 150 V
auf Bestellung 301 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
139+ | 3.5 EUR |
IRF9240 |
Hersteller: International Rectifier
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 11A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 11A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 10984 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
54+ | 9.13 EUR |