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GBPC15005T GeneSiC Semiconductor gbpc15005t.pdf Description: BRIDGE RECT 1PHASE 50V 15A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
GBPC15005W GBPC15005W GeneSiC Semiconductor gbpc15005t.pdf Description: BRIDGE RECT 1P 50V 15A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
G3R40MT12J-TR G3R40MT12J-TR GeneSiC Semiconductor G3R40MT12J.pdf Description: 1200V 40M TO-263-7 G3R SIC MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 18V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 18mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 800 V
Produkt ist nicht verfügbar
G3R40MT12J-TR G3R40MT12J-TR GeneSiC Semiconductor G3R40MT12J.pdf Description: 1200V 40M TO-263-7 G3R SIC MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 18V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 18mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 800 V
auf Bestellung 690 Stücke:
Lieferzeit 10-14 Tag (e)
1+29.22 EUR
10+ 26.37 EUR
25+ 25.32 EUR
100+ 23.8 EUR
250+ 22.86 EUR
G3R30MT12J-TR G3R30MT12J-TR GeneSiC Semiconductor G3R30MT12J.pdf Description: 1200V 30M TO-263-7 G3R SIC MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 45A, 18V
Power Dissipation (Max): 408W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 24mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3863 pF @ 800 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+28.56 EUR
Mindestbestellmenge: 800
G3R30MT12J-TR G3R30MT12J-TR GeneSiC Semiconductor G3R30MT12J.pdf Description: 1200V 30M TO-263-7 G3R SIC MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 45A, 18V
Power Dissipation (Max): 408W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 24mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3863 pF @ 800 V
auf Bestellung 1078 Stücke:
Lieferzeit 10-14 Tag (e)
1+36.96 EUR
10+ 33.6 EUR
25+ 32.34 EUR
100+ 30.52 EUR
250+ 29.39 EUR
G3R160MT12J-TR G3R160MT12J-TR GeneSiC Semiconductor G3R160MT12J.pdf Description: 1200V 160M TO-263-7 G3R SIC MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 800 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
800+8.86 EUR
1600+ 8.56 EUR
Mindestbestellmenge: 800
G3R160MT12J-TR G3R160MT12J-TR GeneSiC Semiconductor G3R160MT12J.pdf Description: 1200V 160M TO-263-7 G3R SIC MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 800 V
auf Bestellung 4798 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.79 EUR
10+ 10.59 EUR
25+ 10.16 EUR
100+ 9.54 EUR
250+ 9.13 EUR
Mindestbestellmenge: 2
GBU4A GBU4A GeneSiC Semiconductor gbu4a.pdf Description: BRIDGE RECT 1PHASE 50V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 420 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.34 EUR
11+ 1.65 EUR
25+ 1.43 EUR
100+ 1.16 EUR
250+ 1.01 EUR
Mindestbestellmenge: 8
KBPC1506W KBPC1506W GeneSiC Semiconductor kbpc1506t.pdf Description: BRIDGE RECT 1P 600V 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
GBPC5004W GBPC5004W GeneSiC Semiconductor gbpc50005t.pdf Description: BRIDGE RECT 1P 400V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
GBJ35M GeneSiC Semiconductor gbj35j.pdf Description: 1000V 35A GBJ SINGLE PHASE BRIDG
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
MSRT20080D GeneSiC Semiconductor MSRT20060%7E200100%28A%29.pdf Description: DIODE GEN PURP 800V 200A 3 TOWER
Packaging: Bulk
Produkt ist nicht verfügbar
GBJ15M GeneSiC Semiconductor gbj15k.pdf Description: 1000V 15A GBJ SINGLE PHASE BRIDG
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
GBJ6M GeneSiC Semiconductor gbj6j.pdf Description: 1000V 6A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
GC05MPS33J-TR GC05MPS33J-TR GeneSiC Semiconductor GC05MPS33J.pdf Description: 3300V 5A TO-263-7 SIC SCHOTTKY M
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 337pF @ 1V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 3300 V
Produkt ist nicht verfügbar
GC05MPS33J-TR GC05MPS33J-TR GeneSiC Semiconductor GC05MPS33J.pdf Description: 3300V 5A TO-263-7 SIC SCHOTTKY M
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 337pF @ 1V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 3300 V
auf Bestellung 589 Stücke:
Lieferzeit 10-14 Tag (e)
1+39.53 EUR
10+ 35.97 EUR
25+ 34.66 EUR
100+ 32.74 EUR
250+ 31.54 EUR
GBPC1510W GBPC1510W GeneSiC Semiconductor gbpc1506t.pdf Description: BRIDGE RECT 1P 1KV 15A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
KBP204G KBP204G GeneSiC Semiconductor kbp201g.pdf Description: BRIDGE RECT 1PHASE 400V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
1N3671AR 1N3671AR GeneSiC Semiconductor 1n3671a.pdf Description: DIODE GEN PURP REV 800V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
1N3673A 1N3673A GeneSiC Semiconductor 1n3671a.pdf Description: DIODE GEN PURP 1KV 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
G3R450MT17J-TR G3R450MT17J-TR GeneSiC Semiconductor G3R450MT17J.pdf Description: 1700V 450M TO-263-7 G3R SIC MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+9.61 EUR
Mindestbestellmenge: 800
G3R450MT17J-TR G3R450MT17J-TR GeneSiC Semiconductor G3R450MT17J.pdf Description: 1700V 450M TO-263-7 G3R SIC MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V
auf Bestellung 1504 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.71 EUR
10+ 11.46 EUR
25+ 11 EUR
100+ 10.34 EUR
250+ 9.93 EUR
Mindestbestellmenge: 2
GBU8B GBU8B GeneSiC Semiconductor gbu8a.pdf Description: BRIDGE RECT 1PHASE 100V 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 3111 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.48 EUR
11+ 1.75 EUR
25+ 1.52 EUR
100+ 1.23 EUR
250+ 1.07 EUR
500+ 0.96 EUR
1000+ 0.86 EUR
2500+ 0.75 EUR
Mindestbestellmenge: 8
DB154G GeneSiC Semiconductor db151g.pdf Description: BRIDGE RECT 1PHASE 400V 1.5A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 13650 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.06 EUR
14+ 1.27 EUR
25+ 1.05 EUR
100+ 0.78 EUR
250+ 0.65 EUR
500+ 0.56 EUR
1000+ 0.49 EUR
2500+ 0.4 EUR
Mindestbestellmenge: 9
GBL06 GBL06 GeneSiC Semiconductor gbl06.pdf Description: BRIDGE RECT 1PHASE 600V 4A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 9500 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.24 EUR
12+ 1.55 EUR
25+ 1.34 EUR
100+ 1.07 EUR
250+ 0.93 EUR
500+ 0.83 EUR
1000+ 0.74 EUR
2500+ 0.64 EUR
Mindestbestellmenge: 8
G2R1000MT33J-TR G2R1000MT33J-TR GeneSiC Semiconductor G2R1000MT33J.pdf Description: 3300V 1000M TO-263-7 G2R SIC MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
Produkt ist nicht verfügbar
G2R1000MT33J-TR G2R1000MT33J-TR GeneSiC Semiconductor G2R1000MT33J.pdf Description: 3300V 1000M TO-263-7 G2R SIC MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
auf Bestellung 686 Stücke:
Lieferzeit 10-14 Tag (e)
1+29.55 EUR
10+ 26.72 EUR
25+ 25.66 EUR
100+ 24.14 EUR
250+ 23.19 EUR
GBU6M GeneSiC Semiconductor gbu6j.pdf Description: BRIDGE RECT 1PHASE 1KV 6A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
KBP210G KBP210G GeneSiC Semiconductor kbp206g.pdf Description: BRIDGE RECT 1PHASE 1KV 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
GBJ25K GeneSiC Semiconductor gbj25m.pdf Description: 800V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
GBPC2501W GBPC2501W GeneSiC Semiconductor gbpc25005t.pdf Description: BRIDGE RECT 1P 50V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
GBU4K GeneSiC Semiconductor gbu4j.pdf Description: BRIDGE RECT 1PHASE 800V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
GBJ10D GeneSiC Semiconductor gbj10b.pdf Description: 200V 10A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
GBJ10J GeneSiC Semiconductor gbj10j.pdf Description: 600V 10A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
GBJ10B GeneSiC Semiconductor gbj10b.pdf Description: 100V 10A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
GBJ10G GeneSiC Semiconductor gbj10b.pdf Description: 400V 10A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
GBU4J GeneSiC Semiconductor gbu4j.pdf Description: BRIDGE RECT 1PHASE 600V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
GBU4M GeneSiC Semiconductor gbu4j.pdf Description: BRIDGE RECT 1PHASE 1KV 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
KBP206G KBP206G GeneSiC Semiconductor kbp206g.pdf description Description: BRIDGE RECT 1PHASE 600V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
KBU8G KBU8G GeneSiC Semiconductor kbu8g-3480915.pdf Bridge Rectifiers 400V 8A Bridge Rectifier
auf Bestellung 1210 Stücke:
Lieferzeit 10-14 Tag (e)
1+2.96 EUR
10+ 2.22 EUR
25+ 1.99 EUR
100+ 1.65 EUR
250+ 1.48 EUR
400+ 1.36 EUR
1200+ 1.24 EUR
GBU8D GBU8D GeneSiC Semiconductor gbu8d-3479968.pdf Bridge Rectifiers 200V 8A Bridge Rectifier
auf Bestellung 5536 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.57 EUR
10+ 1.8 EUR
25+ 1.39 EUR
100+ 1.25 EUR
250+ 1.09 EUR
500+ 0.99 EUR
1000+ 0.9 EUR
Mindestbestellmenge: 2
GBPC2502W GBPC2502W GeneSiC Semiconductor gbpc2502w-3479505.pdf Bridge Rectifiers 200 V - 25 A
auf Bestellung 2151 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.86 EUR
10+ 5.47 EUR
25+ 5 EUR
100+ 4.33 EUR
250+ 3.96 EUR
500+ 3.7 EUR
1000+ 3.59 EUR
KBPC2504T KBPC2504T GeneSiC Semiconductor kbpc2504t-3477405.pdf Bridge Rectifiers 400 V - 25 A
auf Bestellung 441 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.39 EUR
10+ 5.03 EUR
25+ 4.58 EUR
100+ 3.98 EUR
250+ 3.63 EUR
500+ 3.38 EUR
1000+ 3.27 EUR
KBPC3508W KBPC3508W GeneSiC Semiconductor kbpc3508w-3477484.pdf Bridge Rectifiers 800 V - 35 A
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.74 EUR
10+ 5.35 EUR
25+ 4.88 EUR
100+ 4.24 EUR
250+ 3.87 EUR
500+ 3.63 EUR
1000+ 3.5 EUR
GBU15G GBU15G GeneSiC Semiconductor gbu15g-2450371.pdf Bridge Rectifiers 400V 15A Bridge Rectifier
auf Bestellung 487 Stücke:
Lieferzeit 10-14 Tag (e)
1+2.94 EUR
10+ 2.09 EUR
25+ 1.83 EUR
100+ 1.49 EUR
250+ 1.3 EUR
500+ 1.17 EUR
1000+ 1.05 EUR
KBJ2510G KBJ2510G GeneSiC Semiconductor kbj2510g-2451110.pdf Bridge Rectifiers 1000V 25A Bridge Rectifier
Produkt ist nicht verfügbar
KBPC15005W KBPC15005W GeneSiC Semiconductor kbpc15005w-3478886.pdf Bridge Rectifiers 50 V - 15 A
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.12 EUR
10+ 4.8 EUR
25+ 4.36 EUR
100+ 3.78 EUR
250+ 3.43 EUR
500+ 3.19 EUR
1000+ 3.1 EUR
KBPC1502W KBPC1502W GeneSiC Semiconductor kbpc1502w-3477766.pdf Bridge Rectifiers 200 V - 15 A
auf Bestellung 820 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.12 EUR
10+ 4.8 EUR
25+ 4.36 EUR
100+ 3.78 EUR
250+ 3.43 EUR
500+ 3.19 EUR
1000+ 3.1 EUR
KBPC2501W KBPC2501W GeneSiC Semiconductor kbpc2501w-3477727.pdf Bridge Rectifiers 100 V - 25 A
auf Bestellung 703 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.39 EUR
10+ 5.03 EUR
25+ 4.58 EUR
100+ 3.98 EUR
250+ 3.63 EUR
500+ 3.34 EUR
1000+ 3.27 EUR
KBPC35005W KBPC35005W GeneSiC Semiconductor kbpc35005w-3477769.pdf Bridge Rectifiers 50 V - 35 A
auf Bestellung 892 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.74 EUR
10+ 5.35 EUR
25+ 4.88 EUR
100+ 4.24 EUR
250+ 3.87 EUR
500+ 3.63 EUR
1000+ 3.5 EUR
KBPC3501T KBPC3501T GeneSiC Semiconductor kbpc3501t-2451764.pdf Bridge Rectifiers 100 V - 35 A
auf Bestellung 67 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.41 EUR
10+ 5.9 EUR
25+ 5.39 EUR
100+ 4.66 EUR
250+ 4.26 EUR
500+ 4.05 EUR
KBPC1501W KBPC1501W GeneSiC Semiconductor kbpc1501w-2451334.pdf Bridge Rectifiers 100 V - 15 A
Produkt ist nicht verfügbar
KBJ2504G KBJ2504G GeneSiC Semiconductor kbj2504g-2450633.pdf Bridge Rectifiers 400V 25A Bridge Rectifier
auf Bestellung 570 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.92 EUR
10+ 3.01 EUR
25+ 2.71 EUR
100+ 2.31 EUR
W02M GeneSiC Semiconductor GCSR_S_A0000008482_1-2548870.pdf Bridge Rectifiers 200V 1.5A Bridge Rectifier
Produkt ist nicht verfügbar
GBU8J GBU8J GeneSiC Semiconductor gbu8j-3480199.pdf Bridge Rectifiers 600V 8A Bridge Rectifier
auf Bestellung 2577 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.57 EUR
10+ 1.8 EUR
25+ 1.4 EUR
100+ 1.25 EUR
250+ 1.09 EUR
500+ 0.99 EUR
1000+ 0.9 EUR
Mindestbestellmenge: 2
KBU1004 KBU1004 GeneSiC Semiconductor kbu1004-3482356.pdf Bridge Rectifiers 400V 10A Bridge Rectifier
auf Bestellung 73 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.15 EUR
10+ 2.38 EUR
25+ 2.13 EUR
100+ 1.8 EUR
250+ 1.61 EUR
400+ 1.48 EUR
1200+ 1.36 EUR
GBPC3508W GBPC3508W GeneSiC Semiconductor gbpc3508w-3482342.pdf Bridge Rectifiers 800 V - 35 A
auf Bestellung 770 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.55 EUR
10+ 6.05 EUR
25+ 5.54 EUR
100+ 4.86 EUR
250+ 4.45 EUR
500+ 4.17 EUR
1000+ 4.07 EUR
GBPC3510W GBPC3510W GeneSiC Semiconductor gbpc3510w-3477590.pdf Bridge Rectifiers 1000V 35A Si Bridge Rectifier
auf Bestellung 1250 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.55 EUR
10+ 6.05 EUR
25+ 5.54 EUR
100+ 4.86 EUR
250+ 4.45 EUR
500+ 4.17 EUR
1000+ 4.07 EUR
KBPC5006T KBPC5006T GeneSiC Semiconductor kbpc5006t-3480727.pdf Bridge Rectifiers 600 V - 50 A
auf Bestellung 757 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.97 EUR
10+ 5.56 EUR
25+ 5.07 EUR
100+ 4.42 EUR
250+ 4.05 EUR
500+ 3.78 EUR
1000+ 3.66 EUR
GBPC15005T gbpc15005t.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 15A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
GBPC15005W gbpc15005t.pdf
GBPC15005W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 50V 15A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
G3R40MT12J-TR G3R40MT12J.pdf
G3R40MT12J-TR
Hersteller: GeneSiC Semiconductor
Description: 1200V 40M TO-263-7 G3R SIC MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 18V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 18mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 800 V
Produkt ist nicht verfügbar
G3R40MT12J-TR G3R40MT12J.pdf
G3R40MT12J-TR
Hersteller: GeneSiC Semiconductor
Description: 1200V 40M TO-263-7 G3R SIC MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 18V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 18mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 800 V
auf Bestellung 690 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+29.22 EUR
10+ 26.37 EUR
25+ 25.32 EUR
100+ 23.8 EUR
250+ 22.86 EUR
G3R30MT12J-TR G3R30MT12J.pdf
G3R30MT12J-TR
Hersteller: GeneSiC Semiconductor
Description: 1200V 30M TO-263-7 G3R SIC MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 45A, 18V
Power Dissipation (Max): 408W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 24mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3863 pF @ 800 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+28.56 EUR
Mindestbestellmenge: 800
G3R30MT12J-TR G3R30MT12J.pdf
G3R30MT12J-TR
Hersteller: GeneSiC Semiconductor
Description: 1200V 30M TO-263-7 G3R SIC MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 45A, 18V
Power Dissipation (Max): 408W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 24mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3863 pF @ 800 V
auf Bestellung 1078 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+36.96 EUR
10+ 33.6 EUR
25+ 32.34 EUR
100+ 30.52 EUR
250+ 29.39 EUR
G3R160MT12J-TR G3R160MT12J.pdf
G3R160MT12J-TR
Hersteller: GeneSiC Semiconductor
Description: 1200V 160M TO-263-7 G3R SIC MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 800 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+8.86 EUR
1600+ 8.56 EUR
Mindestbestellmenge: 800
G3R160MT12J-TR G3R160MT12J.pdf
G3R160MT12J-TR
Hersteller: GeneSiC Semiconductor
Description: 1200V 160M TO-263-7 G3R SIC MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 800 V
auf Bestellung 4798 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.79 EUR
10+ 10.59 EUR
25+ 10.16 EUR
100+ 9.54 EUR
250+ 9.13 EUR
Mindestbestellmenge: 2
GBU4A gbu4a.pdf
GBU4A
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 420 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.34 EUR
11+ 1.65 EUR
25+ 1.43 EUR
100+ 1.16 EUR
250+ 1.01 EUR
Mindestbestellmenge: 8
KBPC1506W kbpc1506t.pdf
KBPC1506W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 600V 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
GBPC5004W gbpc50005t.pdf
GBPC5004W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 400V 50A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
GBJ35M gbj35j.pdf
Hersteller: GeneSiC Semiconductor
Description: 1000V 35A GBJ SINGLE PHASE BRIDG
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
MSRT20080D MSRT20060%7E200100%28A%29.pdf
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 200A 3 TOWER
Packaging: Bulk
Produkt ist nicht verfügbar
GBJ15M gbj15k.pdf
Hersteller: GeneSiC Semiconductor
Description: 1000V 15A GBJ SINGLE PHASE BRIDG
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
GBJ6M gbj6j.pdf
Hersteller: GeneSiC Semiconductor
Description: 1000V 6A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
GC05MPS33J-TR GC05MPS33J.pdf
GC05MPS33J-TR
Hersteller: GeneSiC Semiconductor
Description: 3300V 5A TO-263-7 SIC SCHOTTKY M
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 337pF @ 1V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 3300 V
Produkt ist nicht verfügbar
GC05MPS33J-TR GC05MPS33J.pdf
GC05MPS33J-TR
Hersteller: GeneSiC Semiconductor
Description: 3300V 5A TO-263-7 SIC SCHOTTKY M
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 337pF @ 1V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 3300 V
auf Bestellung 589 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+39.53 EUR
10+ 35.97 EUR
25+ 34.66 EUR
100+ 32.74 EUR
250+ 31.54 EUR
GBPC1510W gbpc1506t.pdf
GBPC1510W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 15A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
KBP204G kbp201g.pdf
KBP204G
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
1N3671AR 1n3671a.pdf
1N3671AR
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP REV 800V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
1N3673A 1n3671a.pdf
1N3673A
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 1KV 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
G3R450MT17J-TR G3R450MT17J.pdf
G3R450MT17J-TR
Hersteller: GeneSiC Semiconductor
Description: 1700V 450M TO-263-7 G3R SIC MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+9.61 EUR
Mindestbestellmenge: 800
G3R450MT17J-TR G3R450MT17J.pdf
G3R450MT17J-TR
Hersteller: GeneSiC Semiconductor
Description: 1700V 450M TO-263-7 G3R SIC MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V
auf Bestellung 1504 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+12.71 EUR
10+ 11.46 EUR
25+ 11 EUR
100+ 10.34 EUR
250+ 9.93 EUR
Mindestbestellmenge: 2
GBU8B gbu8a.pdf
GBU8B
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 3111 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.48 EUR
11+ 1.75 EUR
25+ 1.52 EUR
100+ 1.23 EUR
250+ 1.07 EUR
500+ 0.96 EUR
1000+ 0.86 EUR
2500+ 0.75 EUR
Mindestbestellmenge: 8
DB154G db151g.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 1.5A DB
Packaging: Bulk
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 13650 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.06 EUR
14+ 1.27 EUR
25+ 1.05 EUR
100+ 0.78 EUR
250+ 0.65 EUR
500+ 0.56 EUR
1000+ 0.49 EUR
2500+ 0.4 EUR
Mindestbestellmenge: 9
GBL06 gbl06.pdf
GBL06
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 4A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 9500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.24 EUR
12+ 1.55 EUR
25+ 1.34 EUR
100+ 1.07 EUR
250+ 0.93 EUR
500+ 0.83 EUR
1000+ 0.74 EUR
2500+ 0.64 EUR
Mindestbestellmenge: 8
G2R1000MT33J-TR G2R1000MT33J.pdf
G2R1000MT33J-TR
Hersteller: GeneSiC Semiconductor
Description: 3300V 1000M TO-263-7 G2R SIC MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
Produkt ist nicht verfügbar
G2R1000MT33J-TR G2R1000MT33J.pdf
G2R1000MT33J-TR
Hersteller: GeneSiC Semiconductor
Description: 3300V 1000M TO-263-7 G2R SIC MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
auf Bestellung 686 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+29.55 EUR
10+ 26.72 EUR
25+ 25.66 EUR
100+ 24.14 EUR
250+ 23.19 EUR
GBU6M gbu6j.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 6A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
KBP210G kbp206g.pdf
KBP210G
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
GBJ25K gbj25m.pdf
Hersteller: GeneSiC Semiconductor
Description: 800V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
GBPC2501W gbpc25005t.pdf
GBPC2501W
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 50V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
GBU4K gbu4j.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
GBJ10D gbj10b.pdf
Hersteller: GeneSiC Semiconductor
Description: 200V 10A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
GBJ10J gbj10j.pdf
Hersteller: GeneSiC Semiconductor
Description: 600V 10A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
GBJ10B gbj10b.pdf
Hersteller: GeneSiC Semiconductor
Description: 100V 10A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
GBJ10G gbj10b.pdf
Hersteller: GeneSiC Semiconductor
Description: 400V 10A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
GBU4J gbu4j.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
GBU4M gbu4j.pdf
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 4A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
KBP206G description kbp206g.pdf
KBP206G
Hersteller: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
KBU8G kbu8g-3480915.pdf
KBU8G
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 400V 8A Bridge Rectifier
auf Bestellung 1210 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+2.96 EUR
10+ 2.22 EUR
25+ 1.99 EUR
100+ 1.65 EUR
250+ 1.48 EUR
400+ 1.36 EUR
1200+ 1.24 EUR
GBU8D gbu8d-3479968.pdf
GBU8D
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 200V 8A Bridge Rectifier
auf Bestellung 5536 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.57 EUR
10+ 1.8 EUR
25+ 1.39 EUR
100+ 1.25 EUR
250+ 1.09 EUR
500+ 0.99 EUR
1000+ 0.9 EUR
Mindestbestellmenge: 2
GBPC2502W gbpc2502w-3479505.pdf
GBPC2502W
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 200 V - 25 A
auf Bestellung 2151 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.86 EUR
10+ 5.47 EUR
25+ 5 EUR
100+ 4.33 EUR
250+ 3.96 EUR
500+ 3.7 EUR
1000+ 3.59 EUR
KBPC2504T kbpc2504t-3477405.pdf
KBPC2504T
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 400 V - 25 A
auf Bestellung 441 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.39 EUR
10+ 5.03 EUR
25+ 4.58 EUR
100+ 3.98 EUR
250+ 3.63 EUR
500+ 3.38 EUR
1000+ 3.27 EUR
KBPC3508W kbpc3508w-3477484.pdf
KBPC3508W
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 800 V - 35 A
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.74 EUR
10+ 5.35 EUR
25+ 4.88 EUR
100+ 4.24 EUR
250+ 3.87 EUR
500+ 3.63 EUR
1000+ 3.5 EUR
GBU15G gbu15g-2450371.pdf
GBU15G
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 400V 15A Bridge Rectifier
auf Bestellung 487 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+2.94 EUR
10+ 2.09 EUR
25+ 1.83 EUR
100+ 1.49 EUR
250+ 1.3 EUR
500+ 1.17 EUR
1000+ 1.05 EUR
KBJ2510G kbj2510g-2451110.pdf
KBJ2510G
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 1000V 25A Bridge Rectifier
Produkt ist nicht verfügbar
KBPC15005W kbpc15005w-3478886.pdf
KBPC15005W
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 50 V - 15 A
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.12 EUR
10+ 4.8 EUR
25+ 4.36 EUR
100+ 3.78 EUR
250+ 3.43 EUR
500+ 3.19 EUR
1000+ 3.1 EUR
KBPC1502W kbpc1502w-3477766.pdf
KBPC1502W
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 200 V - 15 A
auf Bestellung 820 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.12 EUR
10+ 4.8 EUR
25+ 4.36 EUR
100+ 3.78 EUR
250+ 3.43 EUR
500+ 3.19 EUR
1000+ 3.1 EUR
KBPC2501W kbpc2501w-3477727.pdf
KBPC2501W
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 100 V - 25 A
auf Bestellung 703 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.39 EUR
10+ 5.03 EUR
25+ 4.58 EUR
100+ 3.98 EUR
250+ 3.63 EUR
500+ 3.34 EUR
1000+ 3.27 EUR
KBPC35005W kbpc35005w-3477769.pdf
KBPC35005W
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 50 V - 35 A
auf Bestellung 892 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.74 EUR
10+ 5.35 EUR
25+ 4.88 EUR
100+ 4.24 EUR
250+ 3.87 EUR
500+ 3.63 EUR
1000+ 3.5 EUR
KBPC3501T kbpc3501t-2451764.pdf
KBPC3501T
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 100 V - 35 A
auf Bestellung 67 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+7.41 EUR
10+ 5.9 EUR
25+ 5.39 EUR
100+ 4.66 EUR
250+ 4.26 EUR
500+ 4.05 EUR
KBPC1501W kbpc1501w-2451334.pdf
KBPC1501W
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 100 V - 15 A
Produkt ist nicht verfügbar
KBJ2504G kbj2504g-2450633.pdf
KBJ2504G
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 400V 25A Bridge Rectifier
auf Bestellung 570 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.92 EUR
10+ 3.01 EUR
25+ 2.71 EUR
100+ 2.31 EUR
W02M GCSR_S_A0000008482_1-2548870.pdf
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 200V 1.5A Bridge Rectifier
Produkt ist nicht verfügbar
GBU8J gbu8j-3480199.pdf
GBU8J
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 600V 8A Bridge Rectifier
auf Bestellung 2577 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.57 EUR
10+ 1.8 EUR
25+ 1.4 EUR
100+ 1.25 EUR
250+ 1.09 EUR
500+ 0.99 EUR
1000+ 0.9 EUR
Mindestbestellmenge: 2
KBU1004 kbu1004-3482356.pdf
KBU1004
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 400V 10A Bridge Rectifier
auf Bestellung 73 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.15 EUR
10+ 2.38 EUR
25+ 2.13 EUR
100+ 1.8 EUR
250+ 1.61 EUR
400+ 1.48 EUR
1200+ 1.36 EUR
GBPC3508W gbpc3508w-3482342.pdf
GBPC3508W
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 800 V - 35 A
auf Bestellung 770 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+7.55 EUR
10+ 6.05 EUR
25+ 5.54 EUR
100+ 4.86 EUR
250+ 4.45 EUR
500+ 4.17 EUR
1000+ 4.07 EUR
GBPC3510W gbpc3510w-3477590.pdf
GBPC3510W
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 1000V 35A Si Bridge Rectifier
auf Bestellung 1250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+7.55 EUR
10+ 6.05 EUR
25+ 5.54 EUR
100+ 4.86 EUR
250+ 4.45 EUR
500+ 4.17 EUR
1000+ 4.07 EUR
KBPC5006T kbpc5006t-3480727.pdf
KBPC5006T
Hersteller: GeneSiC Semiconductor
Bridge Rectifiers 600 V - 50 A
auf Bestellung 757 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.97 EUR
10+ 5.56 EUR
25+ 5.07 EUR
100+ 4.42 EUR
250+ 4.05 EUR
500+ 3.78 EUR
1000+ 3.66 EUR
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