Produkte > GENERAL SEMICONDUCTOR > Alle Produkte des Herstellers GENERAL SEMICONDUCTOR (35) > Seite 1 nach 1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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1.5KE15A/1 | GENERAL SEMICONDUCTOR | Сапрессор 1500 Вт 15 В |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE160CA Produktcode: 18186 |
General Semiconductor |
Dioden, Diodenbrücken, Zenerdioden > Suppressordioden (Schutzdioden, restriktive) Gehäuse: DO-201 P, Wt: 1500 U Durchbruch: 160 n: Двоспрямований |
auf Bestellung 3 Stück: Lieferzeit 21-28 Tag (e) |
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1.5KE220CA Produktcode: 18612 |
General Semiconductor |
Dioden, Diodenbrücken, Zenerdioden > Suppressordioden (Schutzdioden, restriktive) Gehäuse: DO-201 P, Wt: 1500 U Durchbruch: 220 n: 185 V n: 1 µA n: Двоспрямований Монтаж: THT |
verfügbar: 497 Stück
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1.5KE300CA Produktcode: 18613 |
General Semiconductor |
Dioden, Diodenbrücken, Zenerdioden > Suppressordioden (Schutzdioden, restriktive) Gehäuse: DO-201 P, Wt: 1500 U Durchbruch: 300 n: 256 V n: 1 µA n: Двоспрямований Монтаж: THT |
auf Bestellung 282 Stück: Lieferzeit 21-28 Tag (e) |
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1.5KE33CA Produktcode: 18278 |
General Simeconductor |
Dioden, Diodenbrücken, Zenerdioden > Suppressordioden (Schutzdioden, restriktive) Gehäuse: DO-201 P, Wt: 1500 U Durchbruch: 33 n: 33 V n: 1 µA n: Двоспрямований Монтаж: THT |
auf Bestellung 1044 Stück: Lieferzeit 21-28 Tag (e) |
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1.5KE68CA/1 | GENERAL SEMICONDUCTOR | Сапрессор 1500 Вт 68 В 2-напр. |
auf Bestellung 199 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE7.5A/4 | GENERAL SEMICONDUCTOR | Сапрессор 1500 Вт 7.5 В |
auf Bestellung 1298 Stücke: Lieferzeit 14-21 Tag (e) |
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2N1650 | General Semiconductor |
Description: TRANS NPN 80V 3A TO111 Packaging: Bulk Package / Case: TO-111-4, Stud Mounting Type: Stud Mount Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100mA, 1A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 10V Frequency - Transition: 2MHz Supplier Device Package: TO-111 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 20 W |
auf Bestellung 34 Stücke: Lieferzeit 10-14 Tag (e) |
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2N2018 | General Semiconductor |
Description: TRANS NPN 125V 1A TO111 Packaging: Bulk Package / Case: TO-111-4, Stud Mounting Type: Stud Mount Vce Saturation (Max) @ Ib, Ic: 6V @ 100mA, 1A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 10V Frequency - Transition: 2MHz Supplier Device Package: TO-111 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 125 V Power - Max: 20 W |
Produkt ist nicht verfügbar |
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2N2101 | General Semiconductor | Description: TRANS NPN 40V 3A TO61 |
Produkt ist nicht verfügbar |
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2N2632 | General Semiconductor |
Description: TRANS NPN 60V 5A TO59 Packaging: Bulk Package / Case: TO-210AA, TO-59-3, Stud Mounting Type: Stud Mount Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V Frequency - Transition: 20MHz Supplier Device Package: TO-59 Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 20 W |
Produkt ist nicht verfügbar |
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2N2824 | General Semiconductor |
Description: TRANS 100V 30A TO63 Packaging: Bulk Package / Case: TO-211MB, TO-63-4, Stud Mounting Type: Stud Mount Vce Saturation (Max) @ Ib, Ic: 600mV @ 1A, 10A DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 20A, 3V Frequency - Transition: 20MHz Supplier Device Package: TO-63 Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 118 W |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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2N2849-1 | General Semiconductor |
Description: TRANS 80V 3A TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Frequency - Transition: 30MHz Supplier Device Package: TO-5 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 6.7 W |
Produkt ist nicht verfügbar |
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2N3599 | General Semiconductor |
Description: NPN BIPOLAR TRANSISTOR Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
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2N3752 | General Semiconductor |
Description: TRANS 80V 5A TO111 Packaging: Bulk Package / Case: TO-111-4, Stud Mounting Type: Stud Mount Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V Frequency - Transition: 50MHz Supplier Device Package: TO-111 Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 30 W |
auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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2N4001 | General Semiconductor |
Description: TRANS 100V 1A TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 2µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 2V Frequency - Transition: 40MHz Supplier Device Package: TO-5 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 15 W |
Produkt ist nicht verfügbar |
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2N4115 | General Semiconductor |
Description: TRANS NPN 80V 5A TO59 Packaging: Bulk Package / Case: TO-210AA, TO-59-3, Stud Mounting Type: Stud Mount Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 5V Frequency - Transition: 50MHz Supplier Device Package: TO-59 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 37 W |
Produkt ist nicht verfügbar |
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2N5077 | General Semiconductor |
Description: TRANS 250V 3A TO59 Packaging: Bulk Package / Case: TO-210AA, TO-59-3, Stud Mounting Type: Stud Mount Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 3A Current - Collector Cutoff (Max): 250nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 500mA, 5V Frequency - Transition: 40MHz Supplier Device Package: TO-59 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 40 W |
auf Bestellung 32 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5349 | General Semiconductor |
Description: LOW FREQ SILICON POWER NPN TRANS Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
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2N5389 | General Semiconductor |
Description: LOW FREQ SILICON POWER NPN TRANS Packaging: Bulk Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud Mounting Type: Stud Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Supplier Device Package: TO-61 Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 175 W |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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2N549 | General Semiconductor | Description: LOW FREQUENCY SILICON POWER NPN |
Produkt ist nicht verfügbar |
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2N5552-1 | General Semiconductor |
Description: TRANS 80V 10A TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 2V Frequency - Transition: 30MHz Supplier Device Package: TO-5 Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 15 W |
Produkt ist nicht verfügbar |
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2N5598 | General Semiconductor |
Description: LOW FREQUENCY SILICON POWER NPN Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 850mV @ 200µA, 1mA Supplier Device Package: TO-66 (TO-213AA) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 20 W |
auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5663 | General Semiconductor |
Description: TRANS 300V 1A TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 5V Frequency - Transition: 20MHz Supplier Device Package: TO-5 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 20 W |
auf Bestellung 27 Stücke: Lieferzeit 10-14 Tag (e) |
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2N6233 | General Semiconductor |
Description: TRANS NPN 225V 5A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 5V Supplier Device Package: TO-66 Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 225 V Power - Max: 50 W |
Produkt ist nicht verfügbar |
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B40C800G-E4/51 | General Semiconductor |
0,9A; 65V package: plastig bag; B40C800G bridge rectifying, round MP00.9/065B40C800G Anzahl je Verpackung: 10 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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BZX55-C9V1/D8 | GENERAL SEMICONDUCTOR | Стабилитрон 500 мВт 9, 1 В DO-35 |
auf Bestellung 225 Stücke: Lieferzeit 14-21 Tag (e) |
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DF06S-E3/45 | GENERAL SEMICONDUCTOR | Диодный мост 600 В 1 А SMD |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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FEP30DP-E3/45 | General Semiconductor |
30A; 200V; ultra fast<35ns; packaging: tube; FEP30DP diode rectifying DP FEP30DP Anzahl je Verpackung: 10 Stücke |
auf Bestellung 18 Stücke: Lieferzeit 7-14 Tag (e) |
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GD4049B | General Semiconductor | Description: GD4049 - HEX INVERTING BUFFER |
Produkt ist nicht verfügbar |
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SL22-E3/52T | GENERAL SEMICONDUCTOR | DIODE SCHOTTKY 2A 20V DO-214AA (SMB) |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ16CA-E3/52 | GENERAL SEMICONDUCTOR | Сапрессор 600 Вт 16 В 2-напр., SMB (DO-214AA), Pb-Free |
auf Bestellung 103 Stücke: Lieferzeit 14-21 Tag (e) |
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SS12-E3/1 | GENERAL SEMICONDUCTOR | DIODE SCHOTTKY 1A 20V DO214AC |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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SS36-E3/57T | GENERAL SEMICONDUCTOR | DIODE SCHOTTKY 3A 60V SMC |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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US1M-E3/61T | GENERAL SEMICONDUCTOR | DIODE ULTRA FAST 1A 1000V SMA (DO-214AC) |
auf Bestellung 143 Stücke: Lieferzeit 14-21 Tag (e) |
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W10G-E4/51 | GENERAL SEMICONDUCTOR | Диодный мост 1000 В 1, 5 А |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE15A/1 |
Hersteller: GENERAL SEMICONDUCTOR
Сапрессор 1500 Вт 15 В
Сапрессор 1500 Вт 15 В
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
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11+ | 0.9 EUR |
1.5KE160CA Produktcode: 18186 |
Hersteller: General Semiconductor
Dioden, Diodenbrücken, Zenerdioden > Suppressordioden (Schutzdioden, restriktive)
Gehäuse: DO-201
P, Wt: 1500
U Durchbruch: 160
n: Двоспрямований
Dioden, Diodenbrücken, Zenerdioden > Suppressordioden (Schutzdioden, restriktive)
Gehäuse: DO-201
P, Wt: 1500
U Durchbruch: 160
n: Двоспрямований
auf Bestellung 3 Stück:
Lieferzeit 21-28 Tag (e)1.5KE220CA Produktcode: 18612 |
Hersteller: General Semiconductor
Dioden, Diodenbrücken, Zenerdioden > Suppressordioden (Schutzdioden, restriktive)
Gehäuse: DO-201
P, Wt: 1500
U Durchbruch: 220
n: 185 V
n: 1 µA
n: Двоспрямований
Монтаж: THT
Dioden, Diodenbrücken, Zenerdioden > Suppressordioden (Schutzdioden, restriktive)
Gehäuse: DO-201
P, Wt: 1500
U Durchbruch: 220
n: 185 V
n: 1 µA
n: Двоспрямований
Монтаж: THT
verfügbar: 497 Stück
Anzahl | Preis ohne MwSt |
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1+ | 0.32 EUR |
10+ | 0.29 EUR |
100+ | 0.22 EUR |
1.5KE300CA Produktcode: 18613 |
Hersteller: General Semiconductor
Dioden, Diodenbrücken, Zenerdioden > Suppressordioden (Schutzdioden, restriktive)
Gehäuse: DO-201
P, Wt: 1500
U Durchbruch: 300
n: 256 V
n: 1 µA
n: Двоспрямований
Монтаж: THT
Dioden, Diodenbrücken, Zenerdioden > Suppressordioden (Schutzdioden, restriktive)
Gehäuse: DO-201
P, Wt: 1500
U Durchbruch: 300
n: 256 V
n: 1 µA
n: Двоспрямований
Монтаж: THT
auf Bestellung 282 Stück:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 0.32 EUR |
10+ | 0.29 EUR |
1.5KE33CA Produktcode: 18278 |
Hersteller: General Simeconductor
Dioden, Diodenbrücken, Zenerdioden > Suppressordioden (Schutzdioden, restriktive)
Gehäuse: DO-201
P, Wt: 1500
U Durchbruch: 33
n: 33 V
n: 1 µA
n: Двоспрямований
Монтаж: THT
Dioden, Diodenbrücken, Zenerdioden > Suppressordioden (Schutzdioden, restriktive)
Gehäuse: DO-201
P, Wt: 1500
U Durchbruch: 33
n: 33 V
n: 1 µA
n: Двоспрямований
Монтаж: THT
auf Bestellung 1044 Stück:
Lieferzeit 21-28 Tag (e)1.5KE68CA/1 |
Hersteller: GENERAL SEMICONDUCTOR
Сапрессор 1500 Вт 68 В 2-напр.
Сапрессор 1500 Вт 68 В 2-напр.
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 1.26 EUR |
1.5KE7.5A/4 |
Hersteller: GENERAL SEMICONDUCTOR
Сапрессор 1500 Вт 7.5 В
Сапрессор 1500 Вт 7.5 В
auf Bestellung 1298 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 1.26 EUR |
2N1650 |
Hersteller: General Semiconductor
Description: TRANS NPN 80V 3A TO111
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 10V
Frequency - Transition: 2MHz
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 20 W
Description: TRANS NPN 80V 3A TO111
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 10V
Frequency - Transition: 2MHz
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 20 W
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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34+ | 18.95 EUR |
2N2018 |
Hersteller: General Semiconductor
Description: TRANS NPN 125V 1A TO111
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Vce Saturation (Max) @ Ib, Ic: 6V @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 10V
Frequency - Transition: 2MHz
Supplier Device Package: TO-111
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 125 V
Power - Max: 20 W
Description: TRANS NPN 125V 1A TO111
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Vce Saturation (Max) @ Ib, Ic: 6V @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 10V
Frequency - Transition: 2MHz
Supplier Device Package: TO-111
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 125 V
Power - Max: 20 W
Produkt ist nicht verfügbar
2N2101 |
Hersteller: General Semiconductor
Description: TRANS NPN 40V 3A TO61
Description: TRANS NPN 40V 3A TO61
Produkt ist nicht verfügbar
2N2632 |
Hersteller: General Semiconductor
Description: TRANS NPN 60V 5A TO59
Packaging: Bulk
Package / Case: TO-210AA, TO-59-3, Stud
Mounting Type: Stud Mount
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Frequency - Transition: 20MHz
Supplier Device Package: TO-59
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 20 W
Description: TRANS NPN 60V 5A TO59
Packaging: Bulk
Package / Case: TO-210AA, TO-59-3, Stud
Mounting Type: Stud Mount
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Frequency - Transition: 20MHz
Supplier Device Package: TO-59
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 20 W
Produkt ist nicht verfügbar
2N2824 |
Hersteller: General Semiconductor
Description: TRANS 100V 30A TO63
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Vce Saturation (Max) @ Ib, Ic: 600mV @ 1A, 10A
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 20A, 3V
Frequency - Transition: 20MHz
Supplier Device Package: TO-63
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 118 W
Description: TRANS 100V 30A TO63
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Vce Saturation (Max) @ Ib, Ic: 600mV @ 1A, 10A
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 20A, 3V
Frequency - Transition: 20MHz
Supplier Device Package: TO-63
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 118 W
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 46.66 EUR |
2N2849-1 |
Hersteller: General Semiconductor
Description: TRANS 80V 3A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 30MHz
Supplier Device Package: TO-5
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 6.7 W
Description: TRANS 80V 3A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 30MHz
Supplier Device Package: TO-5
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 6.7 W
Produkt ist nicht verfügbar
2N3599 |
Hersteller: General Semiconductor
Description: NPN BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Description: NPN BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
2N3752 |
Hersteller: General Semiconductor
Description: TRANS 80V 5A TO111
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-111
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Description: TRANS 80V 5A TO111
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-111
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 428.27 EUR |
2N4001 |
Hersteller: General Semiconductor
Description: TRANS 100V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 2µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 2V
Frequency - Transition: 40MHz
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 15 W
Description: TRANS 100V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 2µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 2V
Frequency - Transition: 40MHz
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 15 W
Produkt ist nicht verfügbar
2N4115 |
Hersteller: General Semiconductor
Description: TRANS NPN 80V 5A TO59
Packaging: Bulk
Package / Case: TO-210AA, TO-59-3, Stud
Mounting Type: Stud Mount
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 37 W
Description: TRANS NPN 80V 5A TO59
Packaging: Bulk
Package / Case: TO-210AA, TO-59-3, Stud
Mounting Type: Stud Mount
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 37 W
Produkt ist nicht verfügbar
2N5077 |
Hersteller: General Semiconductor
Description: TRANS 250V 3A TO59
Packaging: Bulk
Package / Case: TO-210AA, TO-59-3, Stud
Mounting Type: Stud Mount
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 3A
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 500mA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 40 W
Description: TRANS 250V 3A TO59
Packaging: Bulk
Package / Case: TO-210AA, TO-59-3, Stud
Mounting Type: Stud Mount
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 3A
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 500mA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-59
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 40 W
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 445.93 EUR |
2N5349 |
Hersteller: General Semiconductor
Description: LOW FREQ SILICON POWER NPN TRANS
Packaging: Bulk
Part Status: Active
Description: LOW FREQ SILICON POWER NPN TRANS
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
2N5389 |
Hersteller: General Semiconductor
Description: LOW FREQ SILICON POWER NPN TRANS
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-61
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 175 W
Description: LOW FREQ SILICON POWER NPN TRANS
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-61
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 175 W
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 820.42 EUR |
2N549 |
Hersteller: General Semiconductor
Description: LOW FREQUENCY SILICON POWER NPN
Description: LOW FREQUENCY SILICON POWER NPN
Produkt ist nicht verfügbar
2N5552-1 |
Hersteller: General Semiconductor
Description: TRANS 80V 10A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 15 W
Description: TRANS 80V 10A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 15 W
Produkt ist nicht verfügbar
2N5598 |
Hersteller: General Semiconductor
Description: LOW FREQUENCY SILICON POWER NPN
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 850mV @ 200µA, 1mA
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 20 W
Description: LOW FREQUENCY SILICON POWER NPN
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 850mV @ 200µA, 1mA
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 20 W
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 67.33 EUR |
2N5663 |
Hersteller: General Semiconductor
Description: TRANS 300V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 20 W
Description: TRANS 300V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 20 W
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 37.35 EUR |
2N6233 |
Hersteller: General Semiconductor
Description: TRANS NPN 225V 5A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 5V
Supplier Device Package: TO-66
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 225 V
Power - Max: 50 W
Description: TRANS NPN 225V 5A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 5V
Supplier Device Package: TO-66
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 225 V
Power - Max: 50 W
Produkt ist nicht verfügbar
B40C800G-E4/51 |
Hersteller: General Semiconductor
0,9A; 65V package: plastig bag; B40C800G bridge rectifying, round MP00.9/065B40C800G
Anzahl je Verpackung: 10 Stücke
0,9A; 65V package: plastig bag; B40C800G bridge rectifying, round MP00.9/065B40C800G
Anzahl je Verpackung: 10 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 0.74 EUR |
BZX55-C9V1/D8 |
Hersteller: GENERAL SEMICONDUCTOR
Стабилитрон 500 мВт 9, 1 В DO-35
Стабилитрон 500 мВт 9, 1 В DO-35
auf Bestellung 225 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
129+ | 0.072 EUR |
DF06S-E3/45 |
Hersteller: GENERAL SEMICONDUCTOR
Диодный мост 600 В 1 А SMD
Диодный мост 600 В 1 А SMD
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 2.03 EUR |
FEP30DP-E3/45 |
Hersteller: General Semiconductor
30A; 200V; ultra fast<35ns; packaging: tube; FEP30DP diode rectifying DP FEP30DP
Anzahl je Verpackung: 10 Stücke
30A; 200V; ultra fast<35ns; packaging: tube; FEP30DP diode rectifying DP FEP30DP
Anzahl je Verpackung: 10 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 4.34 EUR |
GD4049B |
Hersteller: General Semiconductor
Description: GD4049 - HEX INVERTING BUFFER
Description: GD4049 - HEX INVERTING BUFFER
Produkt ist nicht verfügbar
SL22-E3/52T |
Hersteller: GENERAL SEMICONDUCTOR
DIODE SCHOTTKY 2A 20V DO-214AA (SMB)
DIODE SCHOTTKY 2A 20V DO-214AA (SMB)
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 1.85 EUR |
SMBJ16CA-E3/52 |
Hersteller: GENERAL SEMICONDUCTOR
Сапрессор 600 Вт 16 В 2-напр., SMB (DO-214AA), Pb-Free
Сапрессор 600 Вт 16 В 2-напр., SMB (DO-214AA), Pb-Free
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 4.54 EUR |
SS12-E3/1 |
Hersteller: GENERAL SEMICONDUCTOR
DIODE SCHOTTKY 1A 20V DO214AC
DIODE SCHOTTKY 1A 20V DO214AC
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 1.85 EUR |
SS36-E3/57T |
Hersteller: GENERAL SEMICONDUCTOR
DIODE SCHOTTKY 3A 60V SMC
DIODE SCHOTTKY 3A 60V SMC
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 4.62 EUR |
US1M-E3/61T |
Hersteller: GENERAL SEMICONDUCTOR
DIODE ULTRA FAST 1A 1000V SMA (DO-214AC)
DIODE ULTRA FAST 1A 1000V SMA (DO-214AC)
auf Bestellung 143 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
42+ | 0.22 EUR |
W10G-E4/51 |
Hersteller: GENERAL SEMICONDUCTOR
Диодный мост 1000 В 1, 5 А
Диодный мост 1000 В 1, 5 А
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 9.23 EUR |