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UDZ6V8B-7 UDZ6V8B-7 DIODES INCORPORATED udz3v6b_15b_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.8V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Produkt ist nicht verfügbar
ZXMS6005SGTA DIODES INCORPORATED ds32249.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SOT223; 0÷5.5V
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
D6V3H1U2LP16-7 DIODES INCORPORATED D6V3H1U2LP16.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS
Type of diode: TVS
Produkt ist nicht verfügbar
D22V0H1U2LP1610-7 DIODES INCORPORATED D22V0H1U2LP1610.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS
Type of diode: TVS
Produkt ist nicht verfügbar
SDM20U40-7 SDM20U40-7 DIODES INCORPORATED SDM20U40.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOD523; 10ns; 150mW
Mounting: SMD
Power dissipation: 0.15W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD523
Capacitance: 50pF
Max. off-state voltage: 40V
Max. forward voltage: 0.6V
Load current: 0.25A
Semiconductor structure: single diode
Reverse recovery time: 10ns
Max. forward impulse current: 1A
Produkt ist nicht verfügbar
SDM20U40-13 DIODES INCORPORATED Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOD523; 10ns; 150mW
Mounting: SMD
Power dissipation: 0.15W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD523
Capacitance: 50pF
Max. off-state voltage: 40V
Max. forward voltage: 0.6V
Load current: 0.25A
Semiconductor structure: single diode
Reverse recovery time: 10ns
Max. forward impulse current: 1A
Leakage current: 5µA
Produkt ist nicht verfügbar
SDM20U30Q-7 DIODES INCORPORATED SDM20U30Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOD523; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD523
Capacitance: 20pF
Max. off-state voltage: 30V
Max. forward voltage: 0.5V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Leakage current: 0.15mA
Produkt ist nicht verfügbar
SDM20U40Q-7 DIODES INCORPORATED SDM20U40Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOD523; 10ns; 150mW
Mounting: SMD
Application: automotive industry
Power dissipation: 0.15W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD523
Capacitance: 50pF
Max. off-state voltage: 40V
Max. forward voltage: 0.6V
Load current: 0.25A
Semiconductor structure: single diode
Reverse recovery time: 10ns
Max. forward impulse current: 1A
Leakage current: 5µA
Produkt ist nicht verfügbar
SDM20U40Q-13 DIODES INCORPORATED SDM20U40Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOD523; 10ns; 150mW
Mounting: SMD
Application: automotive industry
Power dissipation: 0.15W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD523
Capacitance: 50pF
Max. off-state voltage: 40V
Max. forward voltage: 0.6V
Load current: 0.25A
Semiconductor structure: single diode
Reverse recovery time: 10ns
Max. forward impulse current: 1A
Leakage current: 5µA
Produkt ist nicht verfügbar
SDM20E40C-7-F SDM20E40C-7-F DIODES INCORPORATED ds30276.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.4A; SC59; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SC59
Capacitance: 0.1nF
Max. off-state voltage: 40V
Max. forward voltage: 0.5V
Load current: 0.4A
Semiconductor structure: common cathode; double
Max. forward impulse current: 2A
Leakage current: 70µA
Produkt ist nicht verfügbar
SDM20U30LP-7 DIODES INCORPORATED ds30589.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; X1-DFN1006-2; 3ns
Mounting: SMD
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: X1-DFN1006-2
Capacitance: 20pF
Max. off-state voltage: 30V
Max. forward voltage: 0.575V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 3ns
Max. forward impulse current: 1A
Leakage current: 0.15mA
Produkt ist nicht verfügbar
SDM20U30LPQ-7 DIODES INCORPORATED SDM20U30LPQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; X1-DFN1006-2; 3ns
Mounting: SMD
Application: automotive industry
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: X1-DFN1006-2
Capacitance: 20pF
Max. off-state voltage: 30V
Max. forward voltage: 0.575V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 3ns
Max. forward impulse current: 1A
Leakage current: 0.15mA
Produkt ist nicht verfügbar
DMTH4005SK3Q-13 DIODES INCORPORATED DMTH4005SK3Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 73A; Idm: 150A; 2.1W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 73A
Pulsed drain current: 150A
Power dissipation: 2.1W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 49.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
DMTH4005SPS-13 DIODES INCORPORATED DMTH4005SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMTH4005SPSQ-13 DIODES INCORPORATED DMTH4005SPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 17.5A; Idm: 150A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 17.5A
Pulsed drain current: 150A
Power dissipation: 2.6W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 49.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
DMTH4008LPDW-13 DIODES INCORPORATED Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.1A; Idm: 184A; 2.67W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.1A
Pulsed drain current: 184A
Power dissipation: 2.67W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 12.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMTH4008LPDWQ-13 DIODES INCORPORATED DMTH4008LPDWQ.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.1A; Idm: 184A; 2.67W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.1A
Pulsed drain current: 184A
Power dissipation: 2.67W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 12.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
DMTH4011SPD-13 DIODES INCORPORATED DMTH4011SPD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.8A; Idm: 60A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.8A
Pulsed drain current: 60A
Power dissipation: 2.6W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 10.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMTH4011SPDQ-13 DIODES INCORPORATED DMTH4011SPDQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.8A; Idm: 60A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.8A
Pulsed drain current: 60A
Power dissipation: 2.6W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 10.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
DLP05LC-7-F DLP05LC-7-F DIODES INCORPORATED ds30283.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 6V; 17A; unidirectional; SOT23; reel,tape; Ch: 1
Mounting: SMD
Max. forward impulse current: 17A
Breakdown voltage: 6V
Leakage current: 20µA
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Case: SOT23
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
auf Bestellung 725 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
228+ 0.31 EUR
313+ 0.23 EUR
365+ 0.2 EUR
512+ 0.14 EUR
542+ 0.13 EUR
Mindestbestellmenge: 186
ZXM62P03E6TA ZXM62P03E6TA DIODES INCORPORATED ZXM62P03E6.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.625W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.625W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 795 Stücke:
Lieferzeit 14-21 Tag (e)
68+1.06 EUR
79+ 0.91 EUR
159+ 0.45 EUR
168+ 0.43 EUR
Mindestbestellmenge: 68
ZXMN10B08E6TA ZXMN10B08E6TA DIODES INCORPORATED ZXMN10B08E6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.5A; 1.1W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.5A
Power dissipation: 1.1W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 603 Stücke:
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81+0.89 EUR
166+ 0.43 EUR
175+ 0.41 EUR
500+ 0.39 EUR
Mindestbestellmenge: 81
S2G-13-F S2G-13-F DIODES INCORPORATED S2x_S2xA.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; SMB; Ufmax: 1.15V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1.5A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 20pF
Case: SMB
Max. forward voltage: 1.15V
Max. forward impulse current: 50A
Leakage current: 125µA
Kind of package: reel; tape
auf Bestellung 2423 Stücke:
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200+0.36 EUR
264+ 0.27 EUR
343+ 0.21 EUR
556+ 0.13 EUR
705+ 0.1 EUR
736+ 0.097 EUR
Mindestbestellmenge: 200
AZ23C10-7-F AZ23C10-7-F DIODES INCORPORATED AZ23C_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
auf Bestellung 2840 Stücke:
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157+0.46 EUR
610+ 0.12 EUR
1038+ 0.069 EUR
1401+ 0.051 EUR
1480+ 0.048 EUR
Mindestbestellmenge: 157
AZ23C20-7-F AZ23C20-7-F DIODES INCORPORATED AZ23C_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
auf Bestellung 3190 Stücke:
Lieferzeit 14-21 Tag (e)
490+0.15 EUR
1070+ 0.067 EUR
1220+ 0.059 EUR
1400+ 0.051 EUR
1480+ 0.048 EUR
Mindestbestellmenge: 490
AZ23C51-7-F AZ23C51-7-F DIODES INCORPORATED AZ23C_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 51V; SMD; reel,tape; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
auf Bestellung 2990 Stücke:
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500+0.14 EUR
725+ 0.099 EUR
964+ 0.074 EUR
1071+ 0.067 EUR
1401+ 0.051 EUR
1480+ 0.048 EUR
Mindestbestellmenge: 500
AZ23C11-7-F AZ23C11-7-F DIODES INCORPORATED AZ23C_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
auf Bestellung 3000 Stücke:
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660+0.11 EUR
1750+ 0.041 EUR
1780+ 0.04 EUR
Mindestbestellmenge: 660
AZ23C3V6-7-F AZ23C3V6-7-F DIODES INCORPORATED AZ23C_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
auf Bestellung 2107 Stücke:
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179+0.4 EUR
400+ 0.18 EUR
606+ 0.12 EUR
724+ 0.099 EUR
1397+ 0.051 EUR
1475+ 0.048 EUR
Mindestbestellmenge: 179
AZ23C4V3-7-F AZ23C4V3-7-F DIODES INCORPORATED AZ23C_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
auf Bestellung 1550 Stücke:
Lieferzeit 14-21 Tag (e)
490+0.15 EUR
970+ 0.074 EUR
1080+ 0.067 EUR
1400+ 0.051 EUR
1480+ 0.048 EUR
Mindestbestellmenge: 490
KBP210G KBP210G DIODES INCORPORATED KBP2005G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 65A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 65A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 109 Stücke:
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107+0.67 EUR
109+ 0.66 EUR
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DMS2085LSD-13 DMS2085LSD-13 DIODES INCORPORATED DMS2085LSD.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -11.2A; 1W; SO8
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -11.2A
Mounting: SMD
Case: SO8
Drain-source voltage: -20V
Drain current: -3.4A
On-state resistance: 0.125Ω
Produkt ist nicht verfügbar
MMSTA06-7-F MMSTA06-7-F DIODES INCORPORATED ds30168.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
DFLS260-7 DIODES INCORPORATED DFLS260.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; PowerDI®123; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Case: PowerDI®123
Max. forward voltage: 0.62V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
DFLS260Q-7 DIODES INCORPORATED DFLS260Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; PowerDI®123; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 67pF
Case: PowerDI®123
Max. forward voltage: 0.62V
Leakage current: 0.1mA
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
AP22653QW6-7 DIODES INCORPORATED Category: Power switches - integrated circuits
Description: IC: power switch; USB switch; 1.5A; Ch: 1; SMD; SOT26; reel,tape
Mounting: SMD
Case: SOT26
Operating temperature: -40...125°C
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: USB switch
Supply voltage: 3...5.5V
On-state resistance: 135mΩ
Output current: 1.5A
Type of integrated circuit: power switch
Number of channels: 1
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
117+ 0.62 EUR
222+ 0.32 EUR
235+ 0.3 EUR
2500+ 0.29 EUR
Mindestbestellmenge: 95
DFLS2100-7 DIODES INCORPORATED DFLS2100.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; PowerDI®123; reel,tape
Capacitance: 36pF
Mounting: SMD
Case: PowerDI®123
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Leakage current: 1µA
Max. forward impulse current: 50A
Max. forward voltage: 0.86V
Max. off-state voltage: 100V
Produkt ist nicht verfügbar
DFLS2100Q-7 DIODES INCORPORATED DFLS2100Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; PowerDI®123; 9ns
Capacitance: 36pF
Mounting: SMD
Case: PowerDI®123
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Leakage current: 1µA
Max. forward impulse current: 50A
Max. forward voltage: 0.86V
Max. off-state voltage: 100V
Application: automotive industry
Reverse recovery time: 9ns
Produkt ist nicht verfügbar
KBP206G KBP206G DIODES INCORPORATED KBP2005G_ser.pdf description Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 65A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 2A
Max. forward impulse current: 65A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 198 Stücke:
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136+0.53 EUR
160+ 0.45 EUR
198+ 0.36 EUR
Mindestbestellmenge: 136
MMBZ5232BS-7-F MMBZ5232BS-7-F DIODES INCORPORATED MMBZ52xxBS.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
Produkt ist nicht verfügbar
DMT69M5LH3 DIODES INCORPORATED Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 300A; 3.3W; TO251
Drain-source voltage: 60V
Drain current: 60A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.3W
Polarisation: unipolar
Kind of package: tube
Gate charge: 28.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: THT
Case: TO251
Produkt ist nicht verfügbar
DMT69M5LFVWQ-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 160A; 2.74W
Drain-source voltage: 60V
Drain current: 11.9A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.74W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMTH32M5LPSQ-13 DIODES INCORPORATED DMTH32M5LPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Drain-source voltage: 30V
Drain current: 120A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 68nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 350A
Mounting: SMD
Case: PowerDI5060-8
Produkt ist nicht verfügbar
DMTH10H4M5LPS-13 DIODES INCORPORATED DMTH10H4M5LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W
Drain-source voltage: 100V
Drain current: 14A
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Case: PowerDI5060-8
Produkt ist nicht verfügbar
DUP2105SOQ-7 DUP2105SOQ-7 DIODES INCORPORATED DUP2105SOQ.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 8A; 300W; bidirectional; SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Peak pulse power dissipation: 0.3kW
Case: SOT23
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Max. forward impulse current: 8A
Breakdown voltage: 26.2...32V
Leakage current: 0.1µA
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
231+ 0.31 EUR
371+ 0.19 EUR
596+ 0.12 EUR
625+ 0.11 EUR
Mindestbestellmenge: 179
UDZ6V8B-7 udz3v6b_15b_ser.pdf
UDZ6V8B-7
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.8V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Produkt ist nicht verfügbar
ZXMS6005SGTA ds32249.pdf
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SOT223; 0÷5.5V
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
D6V3H1U2LP16-7 D6V3H1U2LP16.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS
Type of diode: TVS
Produkt ist nicht verfügbar
D22V0H1U2LP1610-7 D22V0H1U2LP1610.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS
Type of diode: TVS
Produkt ist nicht verfügbar
SDM20U40-7 SDM20U40.pdf
SDM20U40-7
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOD523; 10ns; 150mW
Mounting: SMD
Power dissipation: 0.15W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD523
Capacitance: 50pF
Max. off-state voltage: 40V
Max. forward voltage: 0.6V
Load current: 0.25A
Semiconductor structure: single diode
Reverse recovery time: 10ns
Max. forward impulse current: 1A
Produkt ist nicht verfügbar
SDM20U40-13
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOD523; 10ns; 150mW
Mounting: SMD
Power dissipation: 0.15W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD523
Capacitance: 50pF
Max. off-state voltage: 40V
Max. forward voltage: 0.6V
Load current: 0.25A
Semiconductor structure: single diode
Reverse recovery time: 10ns
Max. forward impulse current: 1A
Leakage current: 5µA
Produkt ist nicht verfügbar
SDM20U30Q-7 SDM20U30Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOD523; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD523
Capacitance: 20pF
Max. off-state voltage: 30V
Max. forward voltage: 0.5V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Leakage current: 0.15mA
Produkt ist nicht verfügbar
SDM20U40Q-7 SDM20U40Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOD523; 10ns; 150mW
Mounting: SMD
Application: automotive industry
Power dissipation: 0.15W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD523
Capacitance: 50pF
Max. off-state voltage: 40V
Max. forward voltage: 0.6V
Load current: 0.25A
Semiconductor structure: single diode
Reverse recovery time: 10ns
Max. forward impulse current: 1A
Leakage current: 5µA
Produkt ist nicht verfügbar
SDM20U40Q-13 SDM20U40Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOD523; 10ns; 150mW
Mounting: SMD
Application: automotive industry
Power dissipation: 0.15W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD523
Capacitance: 50pF
Max. off-state voltage: 40V
Max. forward voltage: 0.6V
Load current: 0.25A
Semiconductor structure: single diode
Reverse recovery time: 10ns
Max. forward impulse current: 1A
Leakage current: 5µA
Produkt ist nicht verfügbar
SDM20E40C-7-F ds30276.pdf
SDM20E40C-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.4A; SC59; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SC59
Capacitance: 0.1nF
Max. off-state voltage: 40V
Max. forward voltage: 0.5V
Load current: 0.4A
Semiconductor structure: common cathode; double
Max. forward impulse current: 2A
Leakage current: 70µA
Produkt ist nicht verfügbar
SDM20U30LP-7 ds30589.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; X1-DFN1006-2; 3ns
Mounting: SMD
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: X1-DFN1006-2
Capacitance: 20pF
Max. off-state voltage: 30V
Max. forward voltage: 0.575V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 3ns
Max. forward impulse current: 1A
Leakage current: 0.15mA
Produkt ist nicht verfügbar
SDM20U30LPQ-7 SDM20U30LPQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; X1-DFN1006-2; 3ns
Mounting: SMD
Application: automotive industry
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: X1-DFN1006-2
Capacitance: 20pF
Max. off-state voltage: 30V
Max. forward voltage: 0.575V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 3ns
Max. forward impulse current: 1A
Leakage current: 0.15mA
Produkt ist nicht verfügbar
DMTH4005SK3Q-13 DMTH4005SK3Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 73A; Idm: 150A; 2.1W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 73A
Pulsed drain current: 150A
Power dissipation: 2.1W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 49.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
DMTH4005SPS-13 DMTH4005SPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMTH4005SPSQ-13 DMTH4005SPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 17.5A; Idm: 150A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 17.5A
Pulsed drain current: 150A
Power dissipation: 2.6W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 49.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
DMTH4008LPDW-13
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.1A; Idm: 184A; 2.67W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.1A
Pulsed drain current: 184A
Power dissipation: 2.67W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 12.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMTH4008LPDWQ-13 DMTH4008LPDWQ.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.1A; Idm: 184A; 2.67W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.1A
Pulsed drain current: 184A
Power dissipation: 2.67W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 12.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
DMTH4011SPD-13 DMTH4011SPD.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.8A; Idm: 60A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.8A
Pulsed drain current: 60A
Power dissipation: 2.6W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 10.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMTH4011SPDQ-13 DMTH4011SPDQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.8A; Idm: 60A; 2.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.8A
Pulsed drain current: 60A
Power dissipation: 2.6W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 10.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
DLP05LC-7-F ds30283.pdf
DLP05LC-7-F
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 6V; 17A; unidirectional; SOT23; reel,tape; Ch: 1
Mounting: SMD
Max. forward impulse current: 17A
Breakdown voltage: 6V
Leakage current: 20µA
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Case: SOT23
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
auf Bestellung 725 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
186+0.39 EUR
228+ 0.31 EUR
313+ 0.23 EUR
365+ 0.2 EUR
512+ 0.14 EUR
542+ 0.13 EUR
Mindestbestellmenge: 186
ZXM62P03E6TA ZXM62P03E6.pdf
ZXM62P03E6TA
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.625W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.625W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 795 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
68+1.06 EUR
79+ 0.91 EUR
159+ 0.45 EUR
168+ 0.43 EUR
Mindestbestellmenge: 68
ZXMN10B08E6TA ZXMN10B08E6.pdf
ZXMN10B08E6TA
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.5A; 1.1W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.5A
Power dissipation: 1.1W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 603 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
81+0.89 EUR
166+ 0.43 EUR
175+ 0.41 EUR
500+ 0.39 EUR
Mindestbestellmenge: 81
S2G-13-F S2x_S2xA.pdf
S2G-13-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; SMB; Ufmax: 1.15V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1.5A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 20pF
Case: SMB
Max. forward voltage: 1.15V
Max. forward impulse current: 50A
Leakage current: 125µA
Kind of package: reel; tape
auf Bestellung 2423 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
200+0.36 EUR
264+ 0.27 EUR
343+ 0.21 EUR
556+ 0.13 EUR
705+ 0.1 EUR
736+ 0.097 EUR
Mindestbestellmenge: 200
AZ23C10-7-F AZ23C_ser.pdf
AZ23C10-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
auf Bestellung 2840 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
157+0.46 EUR
610+ 0.12 EUR
1038+ 0.069 EUR
1401+ 0.051 EUR
1480+ 0.048 EUR
Mindestbestellmenge: 157
AZ23C20-7-F AZ23C_ser.pdf
AZ23C20-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
auf Bestellung 3190 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
490+0.15 EUR
1070+ 0.067 EUR
1220+ 0.059 EUR
1400+ 0.051 EUR
1480+ 0.048 EUR
Mindestbestellmenge: 490
AZ23C51-7-F AZ23C_ser.pdf
AZ23C51-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 51V; SMD; reel,tape; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
500+0.14 EUR
725+ 0.099 EUR
964+ 0.074 EUR
1071+ 0.067 EUR
1401+ 0.051 EUR
1480+ 0.048 EUR
Mindestbestellmenge: 500
AZ23C11-7-F AZ23C_ser.pdf
AZ23C11-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOT23; double,common anode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
660+0.11 EUR
1750+ 0.041 EUR
1780+ 0.04 EUR
Mindestbestellmenge: 660
AZ23C3V6-7-F AZ23C_ser.pdf
AZ23C3V6-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
auf Bestellung 2107 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
179+0.4 EUR
400+ 0.18 EUR
606+ 0.12 EUR
724+ 0.099 EUR
1397+ 0.051 EUR
1475+ 0.048 EUR
Mindestbestellmenge: 179
AZ23C4V3-7-F AZ23C_ser.pdf
AZ23C4V3-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.3V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
auf Bestellung 1550 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
490+0.15 EUR
970+ 0.074 EUR
1080+ 0.067 EUR
1400+ 0.051 EUR
1480+ 0.048 EUR
Mindestbestellmenge: 490
KBP210G KBP2005G_ser.pdf
KBP210G
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 65A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 65A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 109 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
107+0.67 EUR
109+ 0.66 EUR
Mindestbestellmenge: 107
DMS2085LSD-13 DMS2085LSD.pdf
DMS2085LSD-13
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -11.2A; 1W; SO8
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -11.2A
Mounting: SMD
Case: SO8
Drain-source voltage: -20V
Drain current: -3.4A
On-state resistance: 0.125Ω
Produkt ist nicht verfügbar
MMSTA06-7-F ds30168.pdf
MMSTA06-7-F
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
DFLS260-7 DFLS260.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; PowerDI®123; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Case: PowerDI®123
Max. forward voltage: 0.62V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
DFLS260Q-7 DFLS260Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; PowerDI®123; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 67pF
Case: PowerDI®123
Max. forward voltage: 0.62V
Leakage current: 0.1mA
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
AP22653QW6-7
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; USB switch; 1.5A; Ch: 1; SMD; SOT26; reel,tape
Mounting: SMD
Case: SOT26
Operating temperature: -40...125°C
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: USB switch
Supply voltage: 3...5.5V
On-state resistance: 135mΩ
Output current: 1.5A
Type of integrated circuit: power switch
Number of channels: 1
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
95+0.76 EUR
117+ 0.62 EUR
222+ 0.32 EUR
235+ 0.3 EUR
2500+ 0.29 EUR
Mindestbestellmenge: 95
DFLS2100-7 DFLS2100.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; PowerDI®123; reel,tape
Capacitance: 36pF
Mounting: SMD
Case: PowerDI®123
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Leakage current: 1µA
Max. forward impulse current: 50A
Max. forward voltage: 0.86V
Max. off-state voltage: 100V
Produkt ist nicht verfügbar
DFLS2100Q-7 DFLS2100Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; PowerDI®123; 9ns
Capacitance: 36pF
Mounting: SMD
Case: PowerDI®123
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Leakage current: 1µA
Max. forward impulse current: 50A
Max. forward voltage: 0.86V
Max. off-state voltage: 100V
Application: automotive industry
Reverse recovery time: 9ns
Produkt ist nicht verfügbar
KBP206G description KBP2005G_ser.pdf
KBP206G
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 65A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 2A
Max. forward impulse current: 65A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
136+0.53 EUR
160+ 0.45 EUR
198+ 0.36 EUR
Mindestbestellmenge: 136
MMBZ5232BS-7-F MMBZ52xxBS.pdf
MMBZ5232BS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; reel,tape; SOT363
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
Produkt ist nicht verfügbar
DMT69M5LH3
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 300A; 3.3W; TO251
Drain-source voltage: 60V
Drain current: 60A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.3W
Polarisation: unipolar
Kind of package: tube
Gate charge: 28.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: THT
Case: TO251
Produkt ist nicht verfügbar
DMT69M5LFVWQ-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 160A; 2.74W
Drain-source voltage: 60V
Drain current: 11.9A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 2.74W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Mounting: SMD
Case: PowerDI3333-8
Produkt ist nicht verfügbar
DMTH32M5LPSQ-13 DMTH32M5LPSQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Drain-source voltage: 30V
Drain current: 120A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 68nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 350A
Mounting: SMD
Case: PowerDI5060-8
Produkt ist nicht verfügbar
DMTH10H4M5LPS-13 DMTH10H4M5LPS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W
Drain-source voltage: 100V
Drain current: 14A
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
Mounting: SMD
Case: PowerDI5060-8
Produkt ist nicht verfügbar
DUP2105SOQ-7 DUP2105SOQ.pdf
DUP2105SOQ-7
Hersteller: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 8A; 300W; bidirectional; SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Peak pulse power dissipation: 0.3kW
Case: SOT23
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Max. forward impulse current: 8A
Breakdown voltage: 26.2...32V
Leakage current: 0.1µA
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
179+0.4 EUR
231+ 0.31 EUR
371+ 0.19 EUR
596+ 0.12 EUR
625+ 0.11 EUR
Mindestbestellmenge: 179
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