Produkte > ALPHA & OMEGA SEMICONDUCTOR > Alle Produkte des Herstellers ALPHA & OMEGA SEMICONDUCTOR (4296) > Seite 26 nach 72
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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AOI7S65 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-251A Tube |
Produkt ist nicht verfügbar |
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AOI8N25 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 5A Case: TO251A Gate-source voltage: ±30V On-state resistance: 0.56Ω Mounting: THT Gate charge: 6nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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AOI8N25 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 250V 8A 3-Pin(3+Tab) TO-251A T/R |
Produkt ist nicht verfügbar |
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AOI8N25 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 5A Case: TO251A Gate-source voltage: ±30V On-state resistance: 0.56Ω Mounting: THT Gate charge: 6nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AOI950A70 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 3.2A; 56.5W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 3.2A Power dissipation: 56.5W Case: TO251A Gate-source voltage: ±20V On-state resistance: 0.95Ω Mounting: THT Gate charge: 10nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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AOI950A70 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 3.2A; 56.5W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 3.2A Power dissipation: 56.5W Case: TO251A Gate-source voltage: ±20V On-state resistance: 0.95Ω Mounting: THT Gate charge: 10nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AOI9N50 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-251A Tube |
Produkt ist nicht verfügbar |
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AOK040A60 | Alpha & Omega Semiconductor | High Voltage MOSFETs (500V - 1000V) |
Produkt ist nicht verfügbar |
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AOK060V65X2 | Alpha & Omega Semiconductor | AOK060V65X2 |
Produkt ist nicht verfügbar |
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AOK065V120X2Q | Alpha & Omega Semiconductor | 1200V SiC MOSFETs |
Produkt ist nicht verfügbar |
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AOK095A60 | Alpha & Omega Semiconductor | N Channel Power Transistor |
Produkt ist nicht verfügbar |
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AOK10B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 20A 163000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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AOK10N90 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 900V 10A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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AOK15B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 30A 167000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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AOK160A60 | Alpha & Omega Semiconductor | N Channel Power Transistor |
Produkt ist nicht verfügbar |
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AOK18N65L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-247 T/R |
Produkt ist nicht verfügbar |
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AOK20B120D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 1200V 40A 340mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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AOK20B120D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 20A; 170W; TO247; 0.94mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 170W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 67.5nC Kind of package: tube Turn-off time: 423ns Collector-emitter saturation voltage: 1.54V Turn-off switching energy: 0.94mJ |
Produkt ist nicht verfügbar |
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AOK20B120D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 20A; 170W; TO247; 0.94mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 170W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 67.5nC Kind of package: tube Turn-off time: 423ns Collector-emitter saturation voltage: 1.54V Turn-off switching energy: 0.94mJ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AOK20B120E1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 20A; 167W; TO247; 0.83mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 167W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 60.5nC Kind of package: tube Turn-off time: 339ns Collector-emitter saturation voltage: 1.68V Turn-off switching energy: 0.83mJ |
Produkt ist nicht verfügbar |
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AOK20B120E1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 1200V 40A 333000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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AOK20B120E1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 20A; 167W; TO247; 0.83mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 167W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 60.5nC Kind of package: tube Turn-off time: 339ns Collector-emitter saturation voltage: 1.68V Turn-off switching energy: 0.83mJ Anzahl je Verpackung: 240 Stücke |
Produkt ist nicht verfügbar |
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AOK20B120E2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 20A; 125W; TO247; 0.82mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 125W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 53.5nC Kind of package: tube Turn-off time: 314ns Collector-emitter saturation voltage: 1.75V Turn-off switching energy: 0.82mJ |
Produkt ist nicht verfügbar |
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AOK20B120E2 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 1200V 40A 250000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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AOK20B120E2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 20A; 125W; TO247; 0.82mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 125W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 53.5nC Kind of package: tube Turn-off time: 314ns Collector-emitter saturation voltage: 1.75V Turn-off switching energy: 0.82mJ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AOK20B135D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ Type of transistor: IGBT Collector-emitter voltage: 1.35kV Collector current: 20A Power dissipation: 170W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-off time: 480ns Collector-emitter saturation voltage: 1.57V Turn-off switching energy: 1.05mJ |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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AOK20B135D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 1350V 40A 340000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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AOK20B135D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ Type of transistor: IGBT Collector-emitter voltage: 1.35kV Collector current: 20A Power dissipation: 170W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-off time: 480ns Collector-emitter saturation voltage: 1.57V Turn-off switching energy: 1.05mJ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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AOK20B135E1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.35kV; 20A; 125W; TO247; 1.26mJ Turn-off time: 311ns Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 2.2V Collector current: 20A Turn-off switching energy: 1.26mJ Mounting: THT Collector-emitter voltage: 1.35kV Power dissipation: 125W Gate charge: 58nC Pulsed collector current: 80A Type of transistor: IGBT Kind of package: tube Case: TO247 |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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AOK20B135E1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 1350V 40A 250000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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AOK20B60D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 83W; TO247; Eoff: 0.18mJ; Eon: 0.76mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 83W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 74A Mounting: THT Gate charge: 24.6nC Kind of package: tube Turn-on time: 45ns Turn-off time: 107ns Collector-emitter saturation voltage: 1.85V Turn-off switching energy: 0.18mJ Turn-on switching energy: 0.76mJ |
auf Bestellung 162 Stücke: Lieferzeit 14-21 Tag (e) |
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AOK20B60D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 40A 139000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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AOK20B60D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 83W; TO247; Eoff: 0.18mJ; Eon: 0.76mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 83W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 74A Mounting: THT Gate charge: 24.6nC Kind of package: tube Turn-on time: 45ns Turn-off time: 107ns Collector-emitter saturation voltage: 1.85V Turn-off switching energy: 0.18mJ Turn-on switching energy: 0.76mJ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 162 Stücke: Lieferzeit 7-14 Tag (e) |
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AOK20B65M1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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AOK20B65M1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.27mJ; Eon: 0.47mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 114W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 46nC Kind of package: tube Turn-on time: 51ns Turn-off time: 178ns Collector-emitter saturation voltage: 1.7V Turn-off switching energy: 0.27mJ Turn-on switching energy: 0.47mJ |
Produkt ist nicht verfügbar |
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AOK20B65M1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.27mJ; Eon: 0.47mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 114W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 46nC Kind of package: tube Turn-on time: 51ns Turn-off time: 178ns Collector-emitter saturation voltage: 1.7V Turn-off switching energy: 0.27mJ Turn-on switching energy: 0.47mJ Anzahl je Verpackung: 240 Stücke |
Produkt ist nicht verfügbar |
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AOK20B65M2 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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AOK20B65M2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 114W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 46nC Kind of package: tube Turn-on time: 59ns Turn-off time: 178ns Collector-emitter saturation voltage: 1.7V Turn-off switching energy: 0.28mJ Turn-on switching energy: 0.58mJ |
Produkt ist nicht verfügbar |
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AOK20B65M2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 114W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 46nC Kind of package: tube Turn-on time: 59ns Turn-off time: 178ns Collector-emitter saturation voltage: 1.7V Turn-off switching energy: 0.28mJ Turn-on switching energy: 0.58mJ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AOK20N60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 T/R |
Produkt ist nicht verfügbar |
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AOK20S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
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AOK20S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
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AOK22N50L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247 T/R |
Produkt ist nicht verfügbar |
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AOK27S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-247 T/R |
Produkt ist nicht verfügbar |
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AOK29S50L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 29A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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AOK29S50L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 29A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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AOK30B120D2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 170W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 67nC Kind of package: tube Turn-off time: 340ns Collector-emitter saturation voltage: 1.77V Turn-off switching energy: 1.28mJ |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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AOK30B120D2 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 1200V 60A 340000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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AOK30B120D2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 170W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 67nC Kind of package: tube Turn-off time: 340ns Collector-emitter saturation voltage: 1.77V Turn-off switching energy: 1.28mJ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 240 Stücke: Lieferzeit 7-14 Tag (e) |
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AOK30B135W1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.35kV; 30A; 170W; TO247; 1.47mJ Type of transistor: IGBT Collector-emitter voltage: 1.35kV Collector current: 30A Power dissipation: 170W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 62nC Kind of package: tube Turn-off time: 362ns Collector-emitter saturation voltage: 1.8V Turn-off switching energy: 1.47mJ |
auf Bestellung 167 Stücke: Lieferzeit 14-21 Tag (e) |
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AOK30B135W1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 1350V 60A 340mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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AOK30B135W1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.35kV; 30A; 170W; TO247; 1.47mJ Type of transistor: IGBT Collector-emitter voltage: 1.35kV Collector current: 30A Power dissipation: 170W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 62nC Kind of package: tube Turn-off time: 362ns Collector-emitter saturation voltage: 1.8V Turn-off switching energy: 1.47mJ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 167 Stücke: Lieferzeit 7-14 Tag (e) |
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AOK30B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 60A 278000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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AOK30B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 60A 278000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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AOK30B60D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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AOK30B60D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 60A 208W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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AOK30B60D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 83W; TO247; Eoff: 0.24mJ; Eon: 1.1mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 83W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: THT Gate charge: 34nC Kind of package: tube Turn-on time: 66ns Turn-off time: 89ns Collector-emitter saturation voltage: 1.85V Turn-off switching energy: 0.24mJ Turn-on switching energy: 1.1mJ |
auf Bestellung 171 Stücke: Lieferzeit 14-21 Tag (e) |
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AOK30B60D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 83W; TO247; Eoff: 0.24mJ; Eon: 1.1mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 83W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: THT Gate charge: 34nC Kind of package: tube Turn-on time: 66ns Turn-off time: 89ns Collector-emitter saturation voltage: 1.85V Turn-off switching energy: 0.24mJ Turn-on switching energy: 1.1mJ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 171 Stücke: Lieferzeit 7-14 Tag (e) |
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AOK30B65M2 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 60A 300mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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AOK30B65M2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 150W; TO247; Eoff: 0.41mJ; Eon: 1.02mJ Turn-off time: 193ns Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 1.66V Collector current: 30A Turn-off switching energy: 0.41mJ Mounting: THT Turn-on switching energy: 1.02mJ Collector-emitter voltage: 650V Power dissipation: 150W Gate charge: 63nC Pulsed collector current: 90A Type of transistor: IGBT Turn-on time: 76ns Kind of package: tube Case: TO247 |
Produkt ist nicht verfügbar |
AOI7S65 |
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-251A Tube
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-251A Tube
Produkt ist nicht verfügbar
AOI8N25 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5A
Case: TO251A
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 6nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5A
Case: TO251A
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 6nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
AOI8N25 |
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 250V 8A 3-Pin(3+Tab) TO-251A T/R
Trans MOSFET N-CH 250V 8A 3-Pin(3+Tab) TO-251A T/R
Produkt ist nicht verfügbar
AOI8N25 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5A
Case: TO251A
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 6nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5A
Case: TO251A
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 6nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AOI950A70 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.2A; 56.5W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.2A
Power dissipation: 56.5W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 10nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.2A; 56.5W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.2A
Power dissipation: 56.5W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 10nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
AOI950A70 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.2A; 56.5W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.2A
Power dissipation: 56.5W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 10nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.2A; 56.5W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.2A
Power dissipation: 56.5W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 10nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AOI9N50 |
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-251A Tube
Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-251A Tube
Produkt ist nicht verfügbar
AOK040A60 |
Hersteller: Alpha & Omega Semiconductor
High Voltage MOSFETs (500V - 1000V)
High Voltage MOSFETs (500V - 1000V)
Produkt ist nicht verfügbar
AOK095A60 |
Hersteller: Alpha & Omega Semiconductor
N Channel Power Transistor
N Channel Power Transistor
Produkt ist nicht verfügbar
AOK10B60D |
Hersteller: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 20A 163000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 20A 163000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
AOK10N90 |
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 900V 10A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 900V 10A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
AOK15B60D |
Hersteller: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 30A 167000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 30A 167000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
AOK160A60 |
Hersteller: Alpha & Omega Semiconductor
N Channel Power Transistor
N Channel Power Transistor
Produkt ist nicht verfügbar
AOK18N65L |
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-247 T/R
Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-247 T/R
Produkt ist nicht verfügbar
AOK20B120D1 |
Hersteller: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 1200V 40A 340mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 40A 340mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
AOK20B120D1 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 170W; TO247; 0.94mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 67.5nC
Kind of package: tube
Turn-off time: 423ns
Collector-emitter saturation voltage: 1.54V
Turn-off switching energy: 0.94mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 170W; TO247; 0.94mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 67.5nC
Kind of package: tube
Turn-off time: 423ns
Collector-emitter saturation voltage: 1.54V
Turn-off switching energy: 0.94mJ
Produkt ist nicht verfügbar
AOK20B120D1 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 170W; TO247; 0.94mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 67.5nC
Kind of package: tube
Turn-off time: 423ns
Collector-emitter saturation voltage: 1.54V
Turn-off switching energy: 0.94mJ
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 170W; TO247; 0.94mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 67.5nC
Kind of package: tube
Turn-off time: 423ns
Collector-emitter saturation voltage: 1.54V
Turn-off switching energy: 0.94mJ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AOK20B120E1 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 167W; TO247; 0.83mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 167W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 60.5nC
Kind of package: tube
Turn-off time: 339ns
Collector-emitter saturation voltage: 1.68V
Turn-off switching energy: 0.83mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 167W; TO247; 0.83mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 167W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 60.5nC
Kind of package: tube
Turn-off time: 339ns
Collector-emitter saturation voltage: 1.68V
Turn-off switching energy: 0.83mJ
Produkt ist nicht verfügbar
AOK20B120E1 |
Hersteller: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 1200V 40A 333000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 40A 333000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
AOK20B120E1 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 167W; TO247; 0.83mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 167W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 60.5nC
Kind of package: tube
Turn-off time: 339ns
Collector-emitter saturation voltage: 1.68V
Turn-off switching energy: 0.83mJ
Anzahl je Verpackung: 240 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 167W; TO247; 0.83mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 167W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 60.5nC
Kind of package: tube
Turn-off time: 339ns
Collector-emitter saturation voltage: 1.68V
Turn-off switching energy: 0.83mJ
Anzahl je Verpackung: 240 Stücke
Produkt ist nicht verfügbar
AOK20B120E2 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 125W; TO247; 0.82mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 125W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Turn-off time: 314ns
Collector-emitter saturation voltage: 1.75V
Turn-off switching energy: 0.82mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 125W; TO247; 0.82mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 125W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Turn-off time: 314ns
Collector-emitter saturation voltage: 1.75V
Turn-off switching energy: 0.82mJ
Produkt ist nicht verfügbar
AOK20B120E2 |
Hersteller: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 1200V 40A 250000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 40A 250000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
AOK20B120E2 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 125W; TO247; 0.82mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 125W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Turn-off time: 314ns
Collector-emitter saturation voltage: 1.75V
Turn-off switching energy: 0.82mJ
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 125W; TO247; 0.82mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 125W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Turn-off time: 314ns
Collector-emitter saturation voltage: 1.75V
Turn-off switching energy: 0.82mJ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AOK20B135D1 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-off time: 480ns
Collector-emitter saturation voltage: 1.57V
Turn-off switching energy: 1.05mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-off time: 480ns
Collector-emitter saturation voltage: 1.57V
Turn-off switching energy: 1.05mJ
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 7.95 EUR |
AOK20B135D1 |
Hersteller: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 1350V 40A 340000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1350V 40A 340000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
AOK20B135D1 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-off time: 480ns
Collector-emitter saturation voltage: 1.57V
Turn-off switching energy: 1.05mJ
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-off time: 480ns
Collector-emitter saturation voltage: 1.57V
Turn-off switching energy: 1.05mJ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 7.95 EUR |
13+ | 5.51 EUR |
AOK20B135E1 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 20A; 125W; TO247; 1.26mJ
Turn-off time: 311ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 2.2V
Collector current: 20A
Turn-off switching energy: 1.26mJ
Mounting: THT
Collector-emitter voltage: 1.35kV
Power dissipation: 125W
Gate charge: 58nC
Pulsed collector current: 80A
Type of transistor: IGBT
Kind of package: tube
Case: TO247
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 20A; 125W; TO247; 1.26mJ
Turn-off time: 311ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 2.2V
Collector current: 20A
Turn-off switching energy: 1.26mJ
Mounting: THT
Collector-emitter voltage: 1.35kV
Power dissipation: 125W
Gate charge: 58nC
Pulsed collector current: 80A
Type of transistor: IGBT
Kind of package: tube
Case: TO247
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 17.88 EUR |
AOK20B135E1 |
Hersteller: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 1350V 40A 250000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1350V 40A 250000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
AOK20B60D1 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; TO247; Eoff: 0.18mJ; Eon: 0.76mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 83W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 74A
Mounting: THT
Gate charge: 24.6nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 107ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.18mJ
Turn-on switching energy: 0.76mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; TO247; Eoff: 0.18mJ; Eon: 0.76mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 83W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 74A
Mounting: THT
Gate charge: 24.6nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 107ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.18mJ
Turn-on switching energy: 0.76mJ
auf Bestellung 162 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 3.53 EUR |
23+ | 3.17 EUR |
30+ | 2.43 EUR |
32+ | 2.3 EUR |
AOK20B60D1 |
Hersteller: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 40A 139000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 40A 139000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
AOK20B60D1 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; TO247; Eoff: 0.18mJ; Eon: 0.76mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 83W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 74A
Mounting: THT
Gate charge: 24.6nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 107ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.18mJ
Turn-on switching energy: 0.76mJ
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; TO247; Eoff: 0.18mJ; Eon: 0.76mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 83W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 74A
Mounting: THT
Gate charge: 24.6nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 107ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.18mJ
Turn-on switching energy: 0.76mJ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 162 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 3.53 EUR |
23+ | 3.17 EUR |
30+ | 2.43 EUR |
32+ | 2.3 EUR |
AOK20B65M1 |
Hersteller: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
AOK20B65M1 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.27mJ; Eon: 0.47mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.27mJ
Turn-on switching energy: 0.47mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.27mJ; Eon: 0.47mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.27mJ
Turn-on switching energy: 0.47mJ
Produkt ist nicht verfügbar
AOK20B65M1 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.27mJ; Eon: 0.47mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.27mJ
Turn-on switching energy: 0.47mJ
Anzahl je Verpackung: 240 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.27mJ; Eon: 0.47mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.27mJ
Turn-on switching energy: 0.47mJ
Anzahl je Verpackung: 240 Stücke
Produkt ist nicht verfügbar
AOK20B65M2 |
Hersteller: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
AOK20B65M2 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.28mJ
Turn-on switching energy: 0.58mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.28mJ
Turn-on switching energy: 0.58mJ
Produkt ist nicht verfügbar
AOK20B65M2 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.28mJ
Turn-on switching energy: 0.58mJ
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.28mJ
Turn-on switching energy: 0.58mJ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AOK20N60L |
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 T/R
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 T/R
Produkt ist nicht verfügbar
AOK20S60L |
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
AOK20S60L |
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
AOK22N50L |
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247 T/R
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247 T/R
Produkt ist nicht verfügbar
AOK27S60L |
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-247 T/R
Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-247 T/R
Produkt ist nicht verfügbar
AOK29S50L |
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 500V 29A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 500V 29A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
AOK29S50L |
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 500V 29A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 500V 29A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
AOK30B120D2 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Turn-off time: 340ns
Collector-emitter saturation voltage: 1.77V
Turn-off switching energy: 1.28mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Turn-off time: 340ns
Collector-emitter saturation voltage: 1.77V
Turn-off switching energy: 1.28mJ
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 5.71 EUR |
14+ | 5.13 EUR |
19+ | 3.92 EUR |
20+ | 3.7 EUR |
AOK30B120D2 |
Hersteller: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 1200V 60A 340000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 60A 340000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
AOK30B120D2 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Turn-off time: 340ns
Collector-emitter saturation voltage: 1.77V
Turn-off switching energy: 1.28mJ
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Turn-off time: 340ns
Collector-emitter saturation voltage: 1.77V
Turn-off switching energy: 1.28mJ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 240 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 5.71 EUR |
14+ | 5.13 EUR |
19+ | 3.92 EUR |
20+ | 3.7 EUR |
AOK30B135W1 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 170W; TO247; 1.47mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Turn-off time: 362ns
Collector-emitter saturation voltage: 1.8V
Turn-off switching energy: 1.47mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 170W; TO247; 1.47mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Turn-off time: 362ns
Collector-emitter saturation voltage: 1.8V
Turn-off switching energy: 1.47mJ
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 4.73 EUR |
18+ | 4.18 EUR |
20+ | 3.6 EUR |
22+ | 3.4 EUR |
AOK30B135W1 |
Hersteller: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 1350V 60A 340mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1350V 60A 340mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
AOK30B135W1 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 170W; TO247; 1.47mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Turn-off time: 362ns
Collector-emitter saturation voltage: 1.8V
Turn-off switching energy: 1.47mJ
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 170W; TO247; 1.47mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Turn-off time: 362ns
Collector-emitter saturation voltage: 1.8V
Turn-off switching energy: 1.47mJ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 167 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 4.73 EUR |
18+ | 4.18 EUR |
20+ | 3.6 EUR |
22+ | 3.4 EUR |
240+ | 3.29 EUR |
AOK30B60D |
Hersteller: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 60A 278000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 60A 278000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
AOK30B60D |
Hersteller: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 60A 278000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 60A 278000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
AOK30B60D1 |
Hersteller: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
AOK30B60D1 |
Hersteller: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 60A 208W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 60A 208W 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
AOK30B60D1 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 83W; TO247; Eoff: 0.24mJ; Eon: 1.1mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 83W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 89ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.24mJ
Turn-on switching energy: 1.1mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 83W; TO247; Eoff: 0.24mJ; Eon: 1.1mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 83W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 89ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.24mJ
Turn-on switching energy: 1.1mJ
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 2.85 EUR |
28+ | 2.57 EUR |
37+ | 1.97 EUR |
39+ | 1.86 EUR |
AOK30B60D1 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 83W; TO247; Eoff: 0.24mJ; Eon: 1.1mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 83W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 89ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.24mJ
Turn-on switching energy: 1.1mJ
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 83W; TO247; Eoff: 0.24mJ; Eon: 1.1mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 83W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 89ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.24mJ
Turn-on switching energy: 1.1mJ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 171 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 2.85 EUR |
28+ | 2.57 EUR |
37+ | 1.97 EUR |
39+ | 1.86 EUR |
AOK30B65M2 |
Hersteller: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 60A 300mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 60A 300mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
AOK30B65M2 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 150W; TO247; Eoff: 0.41mJ; Eon: 1.02mJ
Turn-off time: 193ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.66V
Collector current: 30A
Turn-off switching energy: 0.41mJ
Mounting: THT
Turn-on switching energy: 1.02mJ
Collector-emitter voltage: 650V
Power dissipation: 150W
Gate charge: 63nC
Pulsed collector current: 90A
Type of transistor: IGBT
Turn-on time: 76ns
Kind of package: tube
Case: TO247
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 150W; TO247; Eoff: 0.41mJ; Eon: 1.02mJ
Turn-off time: 193ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.66V
Collector current: 30A
Turn-off switching energy: 0.41mJ
Mounting: THT
Turn-on switching energy: 1.02mJ
Collector-emitter voltage: 650V
Power dissipation: 150W
Gate charge: 63nC
Pulsed collector current: 90A
Type of transistor: IGBT
Turn-on time: 76ns
Kind of package: tube
Case: TO247
Produkt ist nicht verfügbar