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AS4C16M16SA-6TIN AS4C16M16SA-6TIN ALLIANCE MEMORY 3999938.pdf Description: ALLIANCE MEMORY - AS4C16M16SA-6TIN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 256Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 16M x 16 Bit
SVHC: To Be Advised
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
AS4C16M16SA-6TIN AS4C16M16SA-6TIN Alliance Memory 256Mb-AS4C16M16SA-C_I_V3.0_March 2015-1265232.pdf DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp - Tray
auf Bestellung 5075 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.29 EUR
10+ 7.32 EUR
108+ 6.53 EUR
216+ 6.42 EUR
540+ 5.97 EUR
10044+ 5.93 EUR
AS4C16M16SA-6TIN AS4C16M16SA-6TIN ALLIANCE MEMORY as4c16m16sa.pdf Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Kind of package: in-tray
Operating temperature: -40...85°C
Clock frequency: 166MHz
Operating voltage: 3.3V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1281 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.41 EUR
16+ 4.52 EUR
17+ 4.28 EUR
108+ 4.12 EUR
Mindestbestellmenge: 12
AS4C16M16SA-6TINTR AS4C16M16SA-6TINTR Alliance Memory 256Mb-AS4C16M16SA-C_I_V3.0_March 2015-1265232.pdf DRAM 256Mb, SDR, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp(.63) Tape and Reel, A Die
auf Bestellung 1839 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.27 EUR
10+ 7.5 EUR
100+ 6.55 EUR
250+ 6.53 EUR
500+ 6.28 EUR
1000+ 5.97 EUR
2000+ 5.76 EUR
AS4C16M16SA-6TINTR ALLIANCE MEMORY 256Mb-AS4C16M16SA-C&I_V3.0_March%202015.pdf AS4C16M16SA-6TINTR DRAM memories - integrated circuits
Produkt ist nicht verfügbar
AS4C16M16SA-7BCN AS4C16M16SA-7BCN Alliance Memory 256Mb-AS4C16M16SA-C_I_V3.0_March 2015-1265232.pdf DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54-ball FBGA, 166 MHz, Commercial Temp - Tray
auf Bestellung 283 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.94 EUR
10+ 8.15 EUR
100+ 7.13 EUR
250+ 7.11 EUR
348+ 6.67 EUR
1044+ 6.37 EUR
2784+ 6.18 EUR
AS4C16M16SA-7BCN AS4C16M16SA-7BCN ALLIANCE MEMORY 3999938.pdf Description: ALLIANCE MEMORY - AS4C16M16SA-7BCN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 143 MHz, TFBGA, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TFBGA
Speicherdichte: 256Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Betriebstemperatur, min.: -
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 70°C
Speicherkonfiguration: 16M x 16 Bit
SVHC: To Be Advised
auf Bestellung 188 Stücke:
Lieferzeit 14-21 Tag (e)
AS4C16M16SA-7BCN ALLIANCE MEMORY AS4C16M16SA-6BIN.pdf Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 143MHz; 6ns; TFBGA55
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 6ns
Case: TFBGA55
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Operating voltage: 3...3.6V
Anzahl je Verpackung: 348 Stücke
Produkt ist nicht verfügbar
AS4C16M16SA-7BCNTR AS4C16M16SA-7BCNTR Alliance Memory 256Mb-AS4C16M16SA-C_I_V3.0_March 2015-1265232.pdf DRAM 256Mb, SDR, 16M x 16, 3.3V, 54-ball FBGA, 166 MHz, Commercial Temp(.63) Tape and Reel, A Die
Produkt ist nicht verfügbar
AS4C16M16SA-7BCNTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
AS4C16M16SA-7TCN AS4C16M16SA-7TCN Alliance Memory 256Mb-AS4C16M16SA-C_I_V3.0_March 2015-1265232.pdf DRAM SDRAM, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp - Tray
auf Bestellung 11277 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.04 EUR
10+ 6.25 EUR
108+ 5.49 EUR
216+ 5.4 EUR
540+ 5.1 EUR
1080+ 5.03 EUR
2592+ 5 EUR
AS4C16M16SA-7TCN AS4C16M16SA-7TCN ALLIANCE MEMORY 3999938.pdf Description: ALLIANCE MEMORY - AS4C16M16SA-7TCN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 256Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Betriebstemperatur, min.: -
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 70°C
Speicherkonfiguration: 16M x 16 Bit
SVHC: To Be Advised
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)
AS4C16M16SA-7TCN AS4C16M16SA-7TCN ALLIANCE MEMORY as4c16m16sa.pdf Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Kind of package: in-tray
Operating temperature: 0...70°C
Clock frequency: 143MHz
Operating voltage: 3.3V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 173 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.69 EUR
18+ 4.08 EUR
19+ 3.86 EUR
108+ 3.73 EUR
Mindestbestellmenge: 13
AS4C16M16SA-7TCNTR AS4C16M16SA-7TCNTR Alliance Memory 256Mb-AS4C16M16SA-C_I_V3.0_March 2015-1265232.pdf DRAM SDR, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp(.63) Tape and Reel, A Die
auf Bestellung 840 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.06 EUR
10+ 6.41 EUR
100+ 5.6 EUR
250+ 5.56 EUR
500+ 5.37 EUR
1000+ 5.23 EUR
2000+ 5.21 EUR
AS4C16M16SA-7TCNTR AS4C16M16SA-7TCNTR ALLIANCE MEMORY as4c16m16sa.pdf Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Kind of package: reel
Operating temperature: 0...70°C
Clock frequency: 143MHz
Quantity in set/package: 1000pcs.
Operating voltage: 3.3V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2444 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.62 EUR
17+ 4.45 EUR
18+ 4.2 EUR
250+ 4.16 EUR
1000+ 4.05 EUR
Mindestbestellmenge: 13
AS4C16M16SB-6TIN AS4C16M16SB-6TIN ALLIANCE MEMORY AllianceMemory_256M_SDRAM_Bdie_AS4C16M16SB-xBIN_TIN(TCN)_25June2021_Rev2.0.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C16M16SB-6TINTR AS4C16M16SB-6TINTR ALLIANCE MEMORY Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C16M16SB-7TCN AS4C16M16SB-7TCN ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C16M16SB-7TCNTR AS4C16M16SB-7TCNTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C16M16SB-6BIN AS4C16M16SB-6BIN ALLIANCE MEMORY 3999940.pdf Description: ALLIANCE MEMORY - AS4C16M16SB-6BIN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: FBGA
Speicherdichte: 256Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 16M x 16 Bit
SVHC: To Be Advised
auf Bestellung 336 Stücke:
Lieferzeit 14-21 Tag (e)
AS4C16M16SB-6BIN AS4C16M16SB-6BIN Alliance Memory AllianceMemory_256M_SDRAM_Bdie_AS4C16M16SB_xBIN_TI-2510978.pdf DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54-ball FBGA, 166 MHz, Industrial Temp - Tray
auf Bestellung 132 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.45 EUR
10+ 8.62 EUR
100+ 7.55 EUR
250+ 7.52 EUR
348+ 7.23 EUR
1044+ 7.08 EUR
2784+ 6.95 EUR
AS4C16M16SB-6TIN AS4C16M16SB-6TIN Alliance Memory AllianceMemory_256M_SDRAM_Bdie_AS4C16M16SB_xBIN_TI-2510978.pdf DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp - Tray
auf Bestellung 834 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.9 EUR
10+ 6.2 EUR
108+ 5.6 EUR
216+ 5.54 EUR
540+ 5.09 EUR
2592+ 4.95 EUR
5076+ 4.72 EUR
AS4C16M16SB-6TIN AS4C16M16SB-6TIN ALLIANCE MEMORY AllianceMemory_256M_SDRAM_Bdie_AS4C16M16SB-xBIN_TIN(TCN)_25June2021_Rev2.0.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C16M16SB-6TINTR Alliance Memory AllianceMemory_256M_SDRAM_Bdie_AS4C16M16SB_xTIN_TC-2090399.pdf DRAM
Produkt ist nicht verfügbar
AS4C16M16SB-6TINTR AS4C16M16SB-6TINTR ALLIANCE MEMORY Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C16M16SB-7TCN AS4C16M16SB-7TCN Alliance Memory AllianceMemory_256M_SDRAM_Bdie_AS4C16M16SB_xBIN_TI-2510978.pdf DRAM SDRAM, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp - Tray
auf Bestellung 2516 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.72 EUR
10+ 4.17 EUR
108+ 4.14 EUR
AS4C16M16SB-7TCN AS4C16M16SB-7TCN ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AS4C16M16SB-7TCNTR AS4C16M16SB-7TCNTR Alliance Memory AllianceMemory_256M_SDRAM_Bdie_AS4C16M16SB_xBIN_TI-2510978.pdf DRAM SDR, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp(.63) Tape and Reel
auf Bestellung 1840 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.9 EUR
10+ 6.25 EUR
100+ 5.46 EUR
250+ 5.44 EUR
500+ 5.24 EUR
1000+ 5.07 EUR
2000+ 4.79 EUR
AS4C16M16SB-7TCNTR AS4C16M16SB-7TCNTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
AS4C16M32MD1-5BCN ALLIANCE MEMORY 512M-AS4C16M32MD1-5BCN_mobile_ddr-1.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.7÷1.95V; 200MHz; 6.5ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 6.5ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -25...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
Produkt ist nicht verfügbar
AS4C16M32MD1-5BCNTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -25...85°C
Kind of package: reel
Operating voltage: 1.8V
Produkt ist nicht verfügbar
AS4C16M32MD1-5BIN ALLIANCE MEMORY 512M-AS4C16M32MD1-5BCN_mobile_ddr-1.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 1.8V
Produkt ist nicht verfügbar
AS4C16M32MD1-5BINTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
Produkt ist nicht verfügbar
AS4C16M32MD1-5BCN AS4C16M32MD1-5BCN Alliance Memory 512M-AS4C16M32MD1-5BCN_mobile_ddr-1-1288879.pdf DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.45 EUR
10+ 8.4 EUR
100+ 7.55 EUR
250+ 7.23 EUR
480+ 6.72 EUR
1120+ 6.71 EUR
2560+ 6.65 EUR
AS4C16M32MD1-5BCN ALLIANCE MEMORY 512M-AS4C16M32MD1-5BCN_mobile_ddr-1.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.7÷1.95V; 200MHz; 6.5ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 6.5ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -25...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
Produkt ist nicht verfügbar
AS4C16M32MD1-5BCNTR AS4C16M32MD1-5BCNTR Alliance Memory 512M-AS4C16M32MD1-5BCN_mobile_ddr-1-1288879.pdf DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
Produkt ist nicht verfügbar
AS4C16M32MD1-5BCNTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -25...85°C
Kind of package: reel
Operating voltage: 1.8V
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
AS4C16M32MD1-5BIN AS4C16M32MD1-5BIN Alliance Memory 512M-AS4C16M32MD1-5BCN_mobile_ddr-1-1288879.pdf DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
auf Bestellung 96 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.77 EUR
10+ 9.84 EUR
100+ 8.59 EUR
250+ 8.57 EUR
480+ 8.38 EUR
1120+ 8.24 EUR
2560+ 8.11 EUR
AS4C16M32MD1-5BIN ALLIANCE MEMORY 512M-AS4C16M32MD1-5BCN_mobile_ddr-1.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 1.8V
Produkt ist nicht verfügbar
AS4C16M32MD1-5BINTR Alliance Memory 512M-AS4C16M32MD1-5BCN_mobile_ddr-1-1288879.pdf DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
Produkt ist nicht verfügbar
AS4C16M32MD1-5BINTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
AS4C16M32MS-6BIN AS4C16M32MS-6BIN Alliance Memory 512M%20-%20LOW%20POWER%20SDRAM_AS4C32M16MS-7BCN__AS4C32M16-1265324.pdf DRAM 512M 1.8V 166MHz 16Mx16 LP MSDR
auf Bestellung 992 Stücke:
Lieferzeit 10-14 Tag (e)
AS4C16M32MS-7BCN AS4C16M32MS-7BCN Alliance Memory 512M%20-%20LOW%20POWER%20SDRAM_AS4C32M16MS-7BCN__AS4C32M16-1265324.pdf DRAM 512M 1.8V 133MHz 16Mx16 LP MSDR
auf Bestellung 1840 Stücke:
Lieferzeit 10-14 Tag (e)
AS4C16M32MSA-6BIN ALLIANCE MEMORY 20171206_AllianceMemory_512M_LPSDRAM_AS4C16M32MSA-6BIN(TR)_rev1.0_Dec2017.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
Produkt ist nicht verfügbar
AS4C16M32MSA-6BINTR ALLIANCE MEMORY 20171206_AllianceMemory_512M_LPSDRAM_AS4C16M32MSA-6BIN(TR)_rev1.0_Dec2017.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
Produkt ist nicht verfügbar
AS4C16M32MSA-6BIN AS4C16M32MSA-6BIN Alliance Memory 20171206_AllianceMemory_512M_LPSDRAM_AS4C16M32MSA--1282129.pdf DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT
auf Bestellung 387 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.75 EUR
10+ 8.31 EUR
AS4C16M32MSA-6BIN ALLIANCE MEMORY 20171206_AllianceMemory_512M_LPSDRAM_AS4C16M32MSA-6BIN(TR)_rev1.0_Dec2017.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
Produkt ist nicht verfügbar
AS4C16M32MSA-6BINTR AS4C16M32MSA-6BINTR Alliance Memory 20171206_AllianceMemory_512M_LPSDRAM_AS4C16M32MSA--1282129.pdf DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT
Produkt ist nicht verfügbar
AS4C16M32MSA-6BINTR ALLIANCE MEMORY 20171206_AllianceMemory_512M_LPSDRAM_AS4C16M32MSA-6BIN(TR)_rev1.0_Dec2017.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
Produkt ist nicht verfügbar
AS4C16M32MSB-6BIN AS4C16M32MSB-6BIN Alliance Memory AllianceMemory_512M_LPSDRAM_Bdie_AS4C16M32MSB-6BIN(TR)_rev1.0_17Aug2021.pdf DRAM LPSDRAM, 512M, 16M X 32, 1.8V, 90 BALL, BGA 8X13MM, 166 MHZ, INDUSTRIAL TEMP
Produkt ist nicht verfügbar
AS4C16M32MSB-6BINTR AS4C16M32MSB-6BINTR Alliance Memory DRAM LPSDRAM, 512M, 16M X 32, 1.8V, 90 BALL, BGA 8X13MM, 166 MHZ, INDUSTRIAL TEMP, T&R
Produkt ist nicht verfügbar
AS4C16M32SC-7TIN AS4C16M32SC-7TIN ALLIANCE MEMORY AS4C16M32SC.pdf Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3...3.6V
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
4+19.69 EUR
108+ 18.93 EUR
Mindestbestellmenge: 4
AS4C16M32SC-7TINTR ALLIANCE MEMORY AllianceMemory_512M-SDRAM_Cdie_AS4C16M32SC-AS4C32M16SC-AS4C64M8SC-7TIN_Sept2018_rev1.0.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3...3.6V
Produkt ist nicht verfügbar
AS4C16M32SC-7TIN AS4C16M32SC-7TIN Alliance Memory AllianceMemory_512M_SDRAM_Cdie_AS4C16M32SC_AS4C32M-2301376.pdf DRAM SDR, 512MB, 16M x 32, 3.3V, 86PIN TSOP II, 133 MHZ, Industrial Temp - Tray
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
1+26.01 EUR
10+ 24.08 EUR
25+ 23.74 EUR
108+ 20.54 EUR
216+ 19.68 EUR
540+ 19.54 EUR
1080+ 18.3 EUR
AS4C16M32SC-7TIN AS4C16M32SC-7TIN ALLIANCE MEMORY AS4C16M32SC.pdf Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3...3.6V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 126 Stücke:
Lieferzeit 7-14 Tag (e)
4+19.69 EUR
108+ 18.93 EUR
Mindestbestellmenge: 4
AS4C16M32SC-7TINTR AS4C16M32SC-7TINTR Alliance Memory AllianceMemory_512M_SDRAM_Cdie_AS4C16M32SC_AS4C32M-2301376.pdf DRAM 512Mb 16Mx32 3.3V 143MHz SDRAM I-Temp
Produkt ist nicht verfügbar
AS4C16M32SC-7TINTR ALLIANCE MEMORY AllianceMemory_512M-SDRAM_Cdie_AS4C16M32SC-AS4C32M16SC-AS4C64M8SC-7TIN_Sept2018_rev1.0.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3...3.6V
Produkt ist nicht verfügbar
AS4C1G16D4-062BCN ALLIANCE MEMORY AllianceMemory_16Gb_DDR4_AS4C1G16D4-062BCN_Ver1.0_25Oct2022.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 1600MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 16Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.2V
Produkt ist nicht verfügbar
AS4C1G16D4-062BCNTR ALLIANCE MEMORY AllianceMemory_16Gb_DDR4_AS4C1G16D4-062BCN_Ver1.0_25Oct2022-published-No....pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 1600MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 16Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.2V
Produkt ist nicht verfügbar
AS4C1G16D4-062BCN AS4C1G16D4-062BCN ALLIANCE MEMORY ALLM-S-A0017317104-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ALLIANCE MEMORY - AS4C1G16D4-062BCN - DRAM, DDR4, 16 Gbit, 1G x 16 Bit, 1.6 GHz, FBGA, 96 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: DDR4
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: TBA
IC-Gehäuse / Bauform: FBGA
Speicherdichte: 16Gbit
usEccn: EAR99
Versorgungsspannung, nom.: 1.2V
Taktfrequenz, max.: 1.6GHz
Betriebstemperatur, min.: 0°C
euEccn: NLR
Anzahl der Pins: 96Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 95°C
Speicherkonfiguration: 1G x 16 Bit
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 1137 Stücke:
Lieferzeit 14-21 Tag (e)
AS4C16M16SA-6TIN 3999938.pdf
AS4C16M16SA-6TIN
Hersteller: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C16M16SA-6TIN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 256Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 16M x 16 Bit
SVHC: To Be Advised
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
AS4C16M16SA-6TIN 256Mb-AS4C16M16SA-C_I_V3.0_March 2015-1265232.pdf
AS4C16M16SA-6TIN
Hersteller: Alliance Memory
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp - Tray
auf Bestellung 5075 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+8.29 EUR
10+ 7.32 EUR
108+ 6.53 EUR
216+ 6.42 EUR
540+ 5.97 EUR
10044+ 5.93 EUR
AS4C16M16SA-6TIN as4c16m16sa.pdf Alliance_Selection_Guide _Print2024.pdf
AS4C16M16SA-6TIN
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Kind of package: in-tray
Operating temperature: -40...85°C
Clock frequency: 166MHz
Operating voltage: 3.3V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1281 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
12+6.41 EUR
16+ 4.52 EUR
17+ 4.28 EUR
108+ 4.12 EUR
Mindestbestellmenge: 12
AS4C16M16SA-6TINTR 256Mb-AS4C16M16SA-C_I_V3.0_March 2015-1265232.pdf
AS4C16M16SA-6TINTR
Hersteller: Alliance Memory
DRAM 256Mb, SDR, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp(.63) Tape and Reel, A Die
auf Bestellung 1839 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+8.27 EUR
10+ 7.5 EUR
100+ 6.55 EUR
250+ 6.53 EUR
500+ 6.28 EUR
1000+ 5.97 EUR
2000+ 5.76 EUR
AS4C16M16SA-6TINTR 256Mb-AS4C16M16SA-C&I_V3.0_March%202015.pdf
Hersteller: ALLIANCE MEMORY
AS4C16M16SA-6TINTR DRAM memories - integrated circuits
Produkt ist nicht verfügbar
AS4C16M16SA-7BCN 256Mb-AS4C16M16SA-C_I_V3.0_March 2015-1265232.pdf
AS4C16M16SA-7BCN
Hersteller: Alliance Memory
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54-ball FBGA, 166 MHz, Commercial Temp - Tray
auf Bestellung 283 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+8.94 EUR
10+ 8.15 EUR
100+ 7.13 EUR
250+ 7.11 EUR
348+ 6.67 EUR
1044+ 6.37 EUR
2784+ 6.18 EUR
AS4C16M16SA-7BCN 3999938.pdf
AS4C16M16SA-7BCN
Hersteller: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C16M16SA-7BCN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 143 MHz, TFBGA, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TFBGA
Speicherdichte: 256Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Betriebstemperatur, min.: -
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 70°C
Speicherkonfiguration: 16M x 16 Bit
SVHC: To Be Advised
auf Bestellung 188 Stücke:
Lieferzeit 14-21 Tag (e)
AS4C16M16SA-7BCN AS4C16M16SA-6BIN.pdf Alliance_Selection_Guide _Print2024.pdf
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 143MHz; 6ns; TFBGA55
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 6ns
Case: TFBGA55
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Operating voltage: 3...3.6V
Anzahl je Verpackung: 348 Stücke
Produkt ist nicht verfügbar
AS4C16M16SA-7BCNTR 256Mb-AS4C16M16SA-C_I_V3.0_March 2015-1265232.pdf
AS4C16M16SA-7BCNTR
Hersteller: Alliance Memory
DRAM 256Mb, SDR, 16M x 16, 3.3V, 54-ball FBGA, 166 MHz, Commercial Temp(.63) Tape and Reel, A Die
Produkt ist nicht verfügbar
AS4C16M16SA-7BCNTR Alliance_Selection_Guide _Print2024.pdf
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
AS4C16M16SA-7TCN 256Mb-AS4C16M16SA-C_I_V3.0_March 2015-1265232.pdf
AS4C16M16SA-7TCN
Hersteller: Alliance Memory
DRAM SDRAM, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp - Tray
auf Bestellung 11277 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+7.04 EUR
10+ 6.25 EUR
108+ 5.49 EUR
216+ 5.4 EUR
540+ 5.1 EUR
1080+ 5.03 EUR
2592+ 5 EUR
AS4C16M16SA-7TCN 3999938.pdf
AS4C16M16SA-7TCN
Hersteller: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C16M16SA-7TCN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 256Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Betriebstemperatur, min.: -
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 70°C
Speicherkonfiguration: 16M x 16 Bit
SVHC: To Be Advised
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)
AS4C16M16SA-7TCN as4c16m16sa.pdf Alliance_Selection_Guide _Print2024.pdf
AS4C16M16SA-7TCN
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Kind of package: in-tray
Operating temperature: 0...70°C
Clock frequency: 143MHz
Operating voltage: 3.3V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 173 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
13+5.69 EUR
18+ 4.08 EUR
19+ 3.86 EUR
108+ 3.73 EUR
Mindestbestellmenge: 13
AS4C16M16SA-7TCNTR 256Mb-AS4C16M16SA-C_I_V3.0_March 2015-1265232.pdf
AS4C16M16SA-7TCNTR
Hersteller: Alliance Memory
DRAM SDR, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp(.63) Tape and Reel, A Die
auf Bestellung 840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+7.06 EUR
10+ 6.41 EUR
100+ 5.6 EUR
250+ 5.56 EUR
500+ 5.37 EUR
1000+ 5.23 EUR
2000+ 5.21 EUR
AS4C16M16SA-7TCNTR as4c16m16sa.pdf Alliance_Selection_Guide _Print2024.pdf
AS4C16M16SA-7TCNTR
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Kind of package: reel
Operating temperature: 0...70°C
Clock frequency: 143MHz
Quantity in set/package: 1000pcs.
Operating voltage: 3.3V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2444 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
13+5.62 EUR
17+ 4.45 EUR
18+ 4.2 EUR
250+ 4.16 EUR
1000+ 4.05 EUR
Mindestbestellmenge: 13
AS4C16M16SB-6TIN AllianceMemory_256M_SDRAM_Bdie_AS4C16M16SB-xBIN_TIN(TCN)_25June2021_Rev2.0.pdf
AS4C16M16SB-6TIN
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C16M16SB-6TINTR
AS4C16M16SB-6TINTR
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C16M16SB-7TCN Alliance_Selection_Guide _Print2024.pdf
AS4C16M16SB-7TCN
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C16M16SB-7TCNTR Alliance_Selection_Guide _Print2024.pdf
AS4C16M16SB-7TCNTR
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C16M16SB-6BIN 3999940.pdf
AS4C16M16SB-6BIN
Hersteller: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C16M16SB-6BIN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: FBGA
Speicherdichte: 256Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 16M x 16 Bit
SVHC: To Be Advised
auf Bestellung 336 Stücke:
Lieferzeit 14-21 Tag (e)
AS4C16M16SB-6BIN AllianceMemory_256M_SDRAM_Bdie_AS4C16M16SB_xBIN_TI-2510978.pdf
AS4C16M16SB-6BIN
Hersteller: Alliance Memory
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54-ball FBGA, 166 MHz, Industrial Temp - Tray
auf Bestellung 132 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+9.45 EUR
10+ 8.62 EUR
100+ 7.55 EUR
250+ 7.52 EUR
348+ 7.23 EUR
1044+ 7.08 EUR
2784+ 6.95 EUR
AS4C16M16SB-6TIN AllianceMemory_256M_SDRAM_Bdie_AS4C16M16SB_xBIN_TI-2510978.pdf
AS4C16M16SB-6TIN
Hersteller: Alliance Memory
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp - Tray
auf Bestellung 834 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.9 EUR
10+ 6.2 EUR
108+ 5.6 EUR
216+ 5.54 EUR
540+ 5.09 EUR
2592+ 4.95 EUR
5076+ 4.72 EUR
AS4C16M16SB-6TIN AllianceMemory_256M_SDRAM_Bdie_AS4C16M16SB-xBIN_TIN(TCN)_25June2021_Rev2.0.pdf
AS4C16M16SB-6TIN
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C16M16SB-6TINTR AllianceMemory_256M_SDRAM_Bdie_AS4C16M16SB_xTIN_TC-2090399.pdf
Hersteller: Alliance Memory
DRAM
Produkt ist nicht verfügbar
AS4C16M16SB-6TINTR
AS4C16M16SB-6TINTR
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 3.3V; 166MHz; 5ns; TSOP54 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Produkt ist nicht verfügbar
AS4C16M16SB-7TCN AllianceMemory_256M_SDRAM_Bdie_AS4C16M16SB_xBIN_TI-2510978.pdf
AS4C16M16SB-7TCN
Hersteller: Alliance Memory
DRAM SDRAM, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp - Tray
auf Bestellung 2516 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.72 EUR
10+ 4.17 EUR
108+ 4.14 EUR
AS4C16M16SB-7TCN Alliance_Selection_Guide _Print2024.pdf
AS4C16M16SB-7TCN
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: in-tray
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AS4C16M16SB-7TCNTR AllianceMemory_256M_SDRAM_Bdie_AS4C16M16SB_xBIN_TI-2510978.pdf
AS4C16M16SB-7TCNTR
Hersteller: Alliance Memory
DRAM SDR, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp(.63) Tape and Reel
auf Bestellung 1840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.9 EUR
10+ 6.25 EUR
100+ 5.46 EUR
250+ 5.44 EUR
500+ 5.24 EUR
1000+ 5.07 EUR
2000+ 4.79 EUR
AS4C16M16SB-7TCNTR Alliance_Selection_Guide _Print2024.pdf
AS4C16M16SB-7TCNTR
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Clock frequency: 143MHz
Kind of package: reel
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP54 II
Operating voltage: 3.3V
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
AS4C16M32MD1-5BCN 512M-AS4C16M32MD1-5BCN_mobile_ddr-1.pdf
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.7÷1.95V; 200MHz; 6.5ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 6.5ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -25...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
Produkt ist nicht verfügbar
AS4C16M32MD1-5BCNTR Alliance_Selection_Guide _Print2024.pdf
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -25...85°C
Kind of package: reel
Operating voltage: 1.8V
Produkt ist nicht verfügbar
AS4C16M32MD1-5BIN 512M-AS4C16M32MD1-5BCN_mobile_ddr-1.pdf
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 1.8V
Produkt ist nicht verfügbar
AS4C16M32MD1-5BINTR Alliance_Selection_Guide _Print2024.pdf
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
Produkt ist nicht verfügbar
AS4C16M32MD1-5BCN 512M-AS4C16M32MD1-5BCN_mobile_ddr-1-1288879.pdf
AS4C16M32MD1-5BCN
Hersteller: Alliance Memory
DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+9.45 EUR
10+ 8.4 EUR
100+ 7.55 EUR
250+ 7.23 EUR
480+ 6.72 EUR
1120+ 6.71 EUR
2560+ 6.65 EUR
AS4C16M32MD1-5BCN 512M-AS4C16M32MD1-5BCN_mobile_ddr-1.pdf
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.7÷1.95V; 200MHz; 6.5ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 6.5ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -25...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
Produkt ist nicht verfügbar
AS4C16M32MD1-5BCNTR 512M-AS4C16M32MD1-5BCN_mobile_ddr-1-1288879.pdf
AS4C16M32MD1-5BCNTR
Hersteller: Alliance Memory
DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
Produkt ist nicht verfügbar
AS4C16M32MD1-5BCNTR Alliance_Selection_Guide _Print2024.pdf
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -25...85°C
Kind of package: reel
Operating voltage: 1.8V
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
AS4C16M32MD1-5BIN 512M-AS4C16M32MD1-5BCN_mobile_ddr-1-1288879.pdf
AS4C16M32MD1-5BIN
Hersteller: Alliance Memory
DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
auf Bestellung 96 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+10.77 EUR
10+ 9.84 EUR
100+ 8.59 EUR
250+ 8.57 EUR
480+ 8.38 EUR
1120+ 8.24 EUR
2560+ 8.11 EUR
AS4C16M32MD1-5BIN 512M-AS4C16M32MD1-5BCN_mobile_ddr-1.pdf
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 1.8V
Produkt ist nicht verfügbar
AS4C16M32MD1-5BINTR 512M-AS4C16M32MD1-5BCN_mobile_ddr-1-1288879.pdf
Hersteller: Alliance Memory
DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR
Produkt ist nicht verfügbar
AS4C16M32MD1-5BINTR Alliance_Selection_Guide _Print2024.pdf
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
AS4C16M32MS-6BIN 512M%20-%20LOW%20POWER%20SDRAM_AS4C32M16MS-7BCN__AS4C32M16-1265324.pdf
AS4C16M32MS-6BIN
Hersteller: Alliance Memory
DRAM 512M 1.8V 166MHz 16Mx16 LP MSDR
auf Bestellung 992 Stücke:
Lieferzeit 10-14 Tag (e)
AS4C16M32MS-7BCN 512M%20-%20LOW%20POWER%20SDRAM_AS4C32M16MS-7BCN__AS4C32M16-1265324.pdf
AS4C16M32MS-7BCN
Hersteller: Alliance Memory
DRAM 512M 1.8V 133MHz 16Mx16 LP MSDR
auf Bestellung 1840 Stücke:
Lieferzeit 10-14 Tag (e)
AS4C16M32MSA-6BIN 20171206_AllianceMemory_512M_LPSDRAM_AS4C16M32MSA-6BIN(TR)_rev1.0_Dec2017.pdf
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
Produkt ist nicht verfügbar
AS4C16M32MSA-6BINTR 20171206_AllianceMemory_512M_LPSDRAM_AS4C16M32MSA-6BIN(TR)_rev1.0_Dec2017.pdf
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
Produkt ist nicht verfügbar
AS4C16M32MSA-6BIN 20171206_AllianceMemory_512M_LPSDRAM_AS4C16M32MSA--1282129.pdf
AS4C16M32MSA-6BIN
Hersteller: Alliance Memory
DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT
auf Bestellung 387 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+8.75 EUR
10+ 8.31 EUR
AS4C16M32MSA-6BIN 20171206_AllianceMemory_512M_LPSDRAM_AS4C16M32MSA-6BIN(TR)_rev1.0_Dec2017.pdf
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
Produkt ist nicht verfügbar
AS4C16M32MSA-6BINTR 20171206_AllianceMemory_512M_LPSDRAM_AS4C16M32MSA--1282129.pdf
AS4C16M32MSA-6BINTR
Hersteller: Alliance Memory
DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT
Produkt ist nicht verfügbar
AS4C16M32MSA-6BINTR 20171206_AllianceMemory_512M_LPSDRAM_AS4C16M32MSA-6BIN(TR)_rev1.0_Dec2017.pdf
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 1.8V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA90
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: SDRAM
Kind of interface: parallel
Memory capacity: 512Mb
Memory organisation: 16Mx32bit
Access time: 5.5ns
Produkt ist nicht verfügbar
AS4C16M32MSB-6BIN AllianceMemory_512M_LPSDRAM_Bdie_AS4C16M32MSB-6BIN(TR)_rev1.0_17Aug2021.pdf
AS4C16M32MSB-6BIN
Hersteller: Alliance Memory
DRAM LPSDRAM, 512M, 16M X 32, 1.8V, 90 BALL, BGA 8X13MM, 166 MHZ, INDUSTRIAL TEMP
Produkt ist nicht verfügbar
AS4C16M32MSB-6BINTR
AS4C16M32MSB-6BINTR
Hersteller: Alliance Memory
DRAM LPSDRAM, 512M, 16M X 32, 1.8V, 90 BALL, BGA 8X13MM, 166 MHZ, INDUSTRIAL TEMP, T&R
Produkt ist nicht verfügbar
AS4C16M32SC-7TIN AS4C16M32SC.pdf Alliance_Selection_Guide _Print2024.pdf
AS4C16M32SC-7TIN
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3...3.6V
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
4+19.69 EUR
108+ 18.93 EUR
Mindestbestellmenge: 4
AS4C16M32SC-7TINTR AllianceMemory_512M-SDRAM_Cdie_AS4C16M32SC-AS4C32M16SC-AS4C64M8SC-7TIN_Sept2018_rev1.0.pdf
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3...3.6V
Produkt ist nicht verfügbar
AS4C16M32SC-7TIN AllianceMemory_512M_SDRAM_Cdie_AS4C16M32SC_AS4C32M-2301376.pdf
AS4C16M32SC-7TIN
Hersteller: Alliance Memory
DRAM SDR, 512MB, 16M x 32, 3.3V, 86PIN TSOP II, 133 MHZ, Industrial Temp - Tray
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+26.01 EUR
10+ 24.08 EUR
25+ 23.74 EUR
108+ 20.54 EUR
216+ 19.68 EUR
540+ 19.54 EUR
1080+ 18.3 EUR
AS4C16M32SC-7TIN AS4C16M32SC.pdf Alliance_Selection_Guide _Print2024.pdf
AS4C16M32SC-7TIN
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3...3.6V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 126 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
4+19.69 EUR
108+ 18.93 EUR
Mindestbestellmenge: 4
AS4C16M32SC-7TINTR AllianceMemory_512M_SDRAM_Cdie_AS4C16M32SC_AS4C32M-2301376.pdf
AS4C16M32SC-7TINTR
Hersteller: Alliance Memory
DRAM 512Mb 16Mx32 3.3V 143MHz SDRAM I-Temp
Produkt ist nicht verfügbar
AS4C16M32SC-7TINTR AllianceMemory_512M-SDRAM_Cdie_AS4C16M32SC-AS4C32M16SC-AS4C64M8SC-7TIN_Sept2018_rev1.0.pdf
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; TSOP86 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 16Mx32bit
Clock frequency: 133MHz
Access time: 5.4ns
Case: TSOP86 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3...3.6V
Produkt ist nicht verfügbar
AS4C1G16D4-062BCN AllianceMemory_16Gb_DDR4_AS4C1G16D4-062BCN_Ver1.0_25Oct2022.pdf
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 1600MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 16Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.2V
Produkt ist nicht verfügbar
AS4C1G16D4-062BCNTR AllianceMemory_16Gb_DDR4_AS4C1G16D4-062BCN_Ver1.0_25Oct2022-published-No....pdf
Hersteller: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Gx8bit; 1.2V; 1600MHz; 13.75ns; FBGA96; 0÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 1Gx8bit
Clock frequency: 1600MHz
Access time: 13.75ns
Case: FBGA96
Memory capacity: 16Gb
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.2V
Produkt ist nicht verfügbar
AS4C1G16D4-062BCN ALLM-S-A0017317104-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
AS4C1G16D4-062BCN
Hersteller: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C1G16D4-062BCN - DRAM, DDR4, 16 Gbit, 1G x 16 Bit, 1.6 GHz, FBGA, 96 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: DDR4
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: TBA
IC-Gehäuse / Bauform: FBGA
Speicherdichte: 16Gbit
usEccn: EAR99
Versorgungsspannung, nom.: 1.2V
Taktfrequenz, max.: 1.6GHz
Betriebstemperatur, min.: 0°C
euEccn: NLR
Anzahl der Pins: 96Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 95°C
Speicherkonfiguration: 1G x 16 Bit
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 1137 Stücke:
Lieferzeit 14-21 Tag (e)
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