RJU60C3SDPD-E0#J2

RJU60C3SDPD-E0#J2 Renesas Electronics Corporation


rju60c3sdpd-datasheet Hersteller: Renesas Electronics Corporation
Description: DIODE GEN PURP 600V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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Technische Details RJU60C3SDPD-E0#J2 Renesas Electronics Corporation

Description: DIODE GEN PURP 600V 10A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 90 ns, Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-252, Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A, Current - Reverse Leakage @ Vr: 1 µA @ 600 V.