MG1006-83B Microchip Technology
Hersteller: Microchip Technology
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Bag
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 10V
Part Status: Active
Current - Max: 700 mA
Power Dissipation (Max): 100 mW
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Bag
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 10V
Part Status: Active
Current - Max: 700 mA
Power Dissipation (Max): 100 mW
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Technische Details MG1006-83B Microchip Technology
Description: GAAS GUNN EPI DOWN HERMETIC STUD, Packaging: Bag, Diode Type: PIN - Single, Voltage - Peak Reverse (Max): 10V, Part Status: Active, Current - Max: 700 mA, Power Dissipation (Max): 100 mW.