DBL106GH Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: BRIDGE RECT 1PHASE 800V 1A DBL
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 21+ | 0.84 EUR |
| 25+ | 0.73 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.32 EUR |
| 2000+ | 0.29 EUR |
| 5000+ | 0.27 EUR |
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Technische Details DBL106GH Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 1A DBL, Packaging: Tube, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: DBL, Grade: Automotive, Voltage - Peak Reverse (Max): 800 V, Current - Average Rectified (Io): 1 A, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 2 µA @ 800 V, Qualification: AEC-Q101.