Produkte > IXT

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
IXT-1-1N100S1IXYSDescription: MOSFET N-CH 1000V 1.5A 8-SOIC
Packaging: Tube
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Part Status: Active
Drain to Source Voltage (Vdss): 1000 V
Produkt ist nicht verfügbar
IXT-1-1N100S1IXYSMOSFET 1.5 Amps 1000V 11 Ohms Rds
Produkt ist nicht verfügbar
IXT-1-1N100S1 T/RIxys Corporation- 8-Pin SOIC
Produkt ist nicht verfügbar
IXT-1-1N100S1-TRIXYSDescription: MOSFET N-CH 1000V 1.5A 8-SOIC
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Part Status: Active
Drain to Source Voltage (Vdss): 1000 V
Produkt ist nicht verfügbar
IXT-1-1N100S1-TRIXYSMOSFET 1.5 Amps 1000V 11 Ohms Rds
Produkt ist nicht verfügbar
IXT-705ATPlanetDescription: INDUSTRIAL 10G/5G/2.5G/1G/100M C
Packaging: Box
Connector Type: RJ45, SFP
Mounting Type: DIN Rail
Voltage - Input: 12 ~ 24VAC, 48VDC
Configuration: Fixed + SFP
Operating Temperature: -40°C ~ 75°C
Ingress Protection: IP30
Fiber Type: SFP
Copper Type: 10/100/1000
Fiber Ports: 1
SFP/XFP Ports: 1 (SFP)
Distance: 300M
Part Status: Active
Copper Ports: 1
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
1+559.68 EUR
IXTA02N250IXYSDescription: MOSFET N-CH 2500V 0.2A TO263
Produkt ist nicht verfügbar
IXTA02N250HVLittelfuse Inc.Description: MOSFET N-CH 2500V 200MA TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 450Ohm @ 50mA, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 25 V
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.78 EUR
50+ 16.01 EUR
100+ 15.07 EUR
IXTA02N250HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO263; 1.5us
Case: TO263
Mounting: SMD
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 1.5µs
Drain-source voltage: 2.5kV
Drain current: 0.2A
On-state resistance: 450Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA02N250HVIXYSMOSFET SMD N-CHANNEL POWER MOSFET
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.25 EUR
10+ 17.42 EUR
25+ 16.56 EUR
50+ 16.02 EUR
100+ 15.01 EUR
500+ 14.34 EUR
1000+ 12.48 EUR
IXTA02N250HVLittelfuseTrans MOSFET N-CH 2.5KV 0.2A 3-Pin(2+Tab) TO-263ABVHV
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)
7+22.15 EUR
10+ 19.17 EUR
25+ 18.28 EUR
50+ 16.6 EUR
100+ 13.75 EUR
Mindestbestellmenge: 7
IXTA02N250HVLITTELFUSEDescription: LITTELFUSE - IXTA02N250HV - Leistungs-MOSFET, n-Kanal, 2.5 kV, 200 mA, 450 ohm, TO-263AB, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 2.5kV
rohsCompliant: YES
Dauer-Drainstrom Id: 200mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 83W
Bauform - Transistor: TO-263AB
Anzahl der Pins: 3Pin(s)
Produktpalette: PW Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 450ohm
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 287 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA02N250HVLittelfuseTrans MOSFET N-CH 2.5KV 0.2A 3-Pin(2+Tab) TO-263ABVHV
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA02N250HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO263; 1.5us
Case: TO263
Mounting: SMD
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 1.5µs
Drain-source voltage: 2.5kV
Drain current: 0.2A
On-state resistance: 450Ω
Produkt ist nicht verfügbar
IXTA02N250HV-TRLLittelfuseTrans MOSFET N-CH 2.5KV 0.2A 3-Pin(2+Tab) TO-263ABVHV T/R
Produkt ist nicht verfügbar
IXTA02N450HVIXYSDescription: MOSFET N-CH 4500V 200MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 256 pF @ 25 V
Produkt ist nicht verfügbar
IXTA02N450HVLittelfuseTrans MOSFET N-CH 4.5KV 0.2A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA05N100IXYSDescription: MOSFET N-CH 1000V 750MA TO263
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
50+7.17 EUR
Mindestbestellmenge: 50
IXTA05N100IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Produkt ist nicht verfügbar
IXTA05N100LittelfuseTrans MOSFET N-CH Si 1KV 0.75A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA05N100IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA05N100IXYSMOSFET 0.75 Amps 1000V 15 Rds
Produkt ist nicht verfügbar
IXTA05N100LittelfuseTrans MOSFET N-CH Si 1KV 0.75A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA05N100-TRLLittelfuseTrans MOSFET N-CH Si 1KV 0.75A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA05N100-TRLIXYSMOSFET IXTA05N100 TRL
Produkt ist nicht verfügbar
IXTA05N100-TRLIXYSDescription: MOSFET N-CH 1000V 750MA TO263
Produkt ist nicht verfügbar
IXTA05N100HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263HV
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.93 EUR
17+ 4.45 EUR
21+ 3.53 EUR
22+ 3.35 EUR
Mindestbestellmenge: 15
IXTA05N100HVIXYSDescription: MOSFET N-CH 1000V 750MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Produkt ist nicht verfügbar
IXTA05N100HVLittelfuseTrans MOSFET N-CH Si 1KV 0.75A
auf Bestellung 5200 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA05N100HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263HV
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.93 EUR
17+ 4.45 EUR
21+ 3.53 EUR
22+ 3.35 EUR
Mindestbestellmenge: 15
IXTA05N100HVIXYSMOSFET High Voltage Power MOSFET
auf Bestellung 1699 Stücke:
Lieferzeit 601-605 Tag (e)
1+7.81 EUR
10+ 6.56 EUR
50+ 6.2 EUR
100+ 5.3 EUR
250+ 5.02 EUR
500+ 4.72 EUR
1000+ 4.07 EUR
IXTA05N100HV-TRLIXYSDescription: MOSFET N-CH 1000V 750MA TO263HV
Produkt ist nicht verfügbar
IXTA05N100HV-TRLLittelfuseHigh Voltage Power MOSFET
Produkt ist nicht verfügbar
IXTA05N100HV-TRLIXYSMOSFET IXTA05N100HV TRL
Produkt ist nicht verfügbar
IXTA06N120PIXYSMOSFET 0.6 Amps 1200V 32 Rds
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.32 EUR
10+ 7.3 EUR
50+ 5.79 EUR
IXTA06N120PLITTELFUSEDescription: LITTELFUSE - IXTA06N120P - MOSFET, N-CH, 1.2KV, 0.6A, TO-263
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 600mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 42W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: Polar Series
productTraceability: No
Kanaltyp: N Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 27ohm
directShipCharge: 25
SVHC: No SVHC (17-Dec-2014)
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA06N120PLittelfuseTrans MOSFET N-CH 1.2KV 0.6A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA06N120PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.6A; 42W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.6A
Power dissipation: 42W
Case: TO263
On-state resistance: 34Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
IXTA06N120PIXYSDescription: MOSFET N-CH 1200V 600MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 32Ohm @ 300mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 389 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.25 EUR
50+ 5.75 EUR
100+ 4.93 EUR
Mindestbestellmenge: 3
IXTA06N120PLittelfuseTrans MOSFET N-CH 1.2KV 0.6A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA06N120PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.6A; 42W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.6A
Power dissipation: 42W
Case: TO263
On-state resistance: 34Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA06N120P TRLIxys CorporationTrans MOSFET N-CH 1.2KV 0.6A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA06N120P-TRLLittelfuse Inc.Description: MOSFET N-CH 1200V 600MA TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
IXTA06N120P-TRLLittelfuseTrans MOSFET N-CH 1.2KV 0.6A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA06N120P-TRLLittelfuseTrans MOSFET N-CH 1.2KV 0.6A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA06N120P-TRLIXYSMOSFET IXTA06N120P TRL
Produkt ist nicht verfügbar
IXTA06N120P-TRLLittelfuse Inc.Description: MOSFET N-CH 1200V 600MA TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
auf Bestellung 2940 Stücke:
Lieferzeit 10-14 Tag (e)
IXTA08N100D2LittelfuseTrans MOSFET N-CH 1KV 0.8A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA08N100D2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depleted
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.42 EUR
33+ 2.2 EUR
41+ 1.76 EUR
44+ 1.66 EUR
Mindestbestellmenge: 30
IXTA08N100D2IXYSMOSFET N-CH MOSFETS (D2) 1000V 800MA
auf Bestellung 548 Stücke:
Lieferzeit 381-385 Tag (e)
1+4.7 EUR
10+ 3.94 EUR
50+ 3.71 EUR
IXTA08N100D2Littelfuse Inc.Description: MOSFET N-CH 1000V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-263AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
auf Bestellung 2938 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.73 EUR
50+ 3.75 EUR
100+ 3.21 EUR
500+ 2.85 EUR
1000+ 2.44 EUR
2000+ 2.3 EUR
Mindestbestellmenge: 4
IXTA08N100D2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depleted
Anzahl je Verpackung: 1 Stücke
auf Bestellung 184 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.42 EUR
33+ 2.2 EUR
41+ 1.76 EUR
44+ 1.66 EUR
Mindestbestellmenge: 30
IXTA08N100D2LITTELFUSEDescription: LITTELFUSE - IXTA08N100D2 - MOSFET, N-CH, 1KV, 0.8A, TO-263AA
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 1kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 800mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: -
euEccn: NLR
Verlustleistung: 60W
Bauform - Transistor: TO-263AA
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: Yes-Date/Lot Code
Kanaltyp: N Channel
Rds(on)-Prüfspannung: 0V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 21ohm
directShipCharge: 25
SVHC: No SVHC (17-Dec-2014)
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA08N100D2-TRLIXYSDescription: IXTA08N100D2 TRL
Produkt ist nicht verfügbar
IXTA08N100D2-TRLIXYSMOSFET IXTA08N100D2 TRL
Produkt ist nicht verfügbar
IXTA08N100D2HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263HV
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO263HV
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depleted
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA08N100D2HVLittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) TO-263HV
Produkt ist nicht verfügbar
IXTA08N100D2HVLITTELFUSEDescription: LITTELFUSE - IXTA08N100D2HV - Leistungs-MOSFET, n-Kanal, 1 kV, 800 mA, 21 ohm, TO-263HV, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 1kV
rohsCompliant: YES
Dauer-Drainstrom Id: 800mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 60W
Bauform - Transistor: TO-263HV
Anzahl der Pins: 3Pin(s)
Produktpalette: PW Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 0V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 21ohm
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA08N100D2HVIXYSMOSFET MSFT N-CH DEPL MODE-D2
auf Bestellung 926 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.06 EUR
10+ 5.93 EUR
50+ 5.21 EUR
100+ 4.7 EUR
250+ 4.51 EUR
IXTA08N100D2HVIXYSDescription: MOSFET N-CH 1000V 800MA TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
50+5.54 EUR
Mindestbestellmenge: 50
IXTA08N100D2HVLittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) TO-263HV
Produkt ist nicht verfügbar
IXTA08N100D2HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263HV
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO263HV
On-state resistance: 21Ω
Mounting: SMD
Gate charge: 325nC
Kind of package: tube
Kind of channel: depleted
Produkt ist nicht verfügbar
IXTA08N100D2HV TRLIxys CorporationTrans MOSFET N-CH 1KV 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA08N100D2HV-TRLIXYSMOSFET IXTA08N100D2HV TRL
Produkt ist nicht verfügbar
IXTA08N100D2HV-TRLIXYSDescription: MOSFET N-CH 1000V 800MA TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Produkt ist nicht verfügbar
IXTA08N100D2HV-TRLLittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA08N100D2TRLLittelfuseTrans MOSFET N-CH 1KV 0.8A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA08N100PLittelfuseTrans MOSFET N-CH 1KV 0.8A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA08N100PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO263; 750ns
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 42W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 0.8A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
IXTA08N100PIXYSMOSFET 0.8 Amps 1000V 20 Rds
Produkt ist nicht verfügbar
IXTA08N100PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO263; 750ns
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 42W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 0.8A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA08N100PIXYSDescription: MOSFET N-CH 1000V 0.8A TO-263
Produkt ist nicht verfügbar
IXTA08N120PLittelfuseTrans MOSFET N-CH 1.2KV 0.8A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA08N120PIXYSMOSFET 0.8 Amps 1200V 25 Rds
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.53 EUR
10+ 5.98 EUR
50+ 5.86 EUR
IXTA08N120PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 0.8A; 50W; TO263
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.8A
Power dissipation: 50W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 25Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 900ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA08N120PIXYSDescription: MOSFET N-CH 1200V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 500mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 25 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.48 EUR
50+ 5.13 EUR
100+ 4.4 EUR
500+ 3.91 EUR
1000+ 3.35 EUR
Mindestbestellmenge: 3
IXTA08N120PLittelfuseTrans MOSFET N-CH 1.2KV 0.8A 3-Pin(2+Tab) D2PAK
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA08N120PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 0.8A; 50W; TO263
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.8A
Power dissipation: 50W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 25Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
IXTA08N50D2Littelfuse Inc.Description: MOSFET N-CH 500V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
auf Bestellung 905 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.73 EUR
50+ 3.75 EUR
100+ 3.21 EUR
500+ 2.85 EUR
Mindestbestellmenge: 4
IXTA08N50D2
Produktcode: 118357		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IXTA08N50D2LittelfuseTrans MOSFET N-CH 500V 0.8A 3-Pin(2+Tab) TO-263AA
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA08N50D2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 11ns
Produkt ist nicht verfügbar
IXTA08N50D2IXYSMOSFET N-CH MOSFETS (D2) 500V 800MA
auf Bestellung 738 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.7 EUR
10+ 4.28 EUR
50+ 3.4 EUR
100+ 2.92 EUR
250+ 2.87 EUR
500+ 2.69 EUR
1000+ 2.45 EUR
IXTA08N50D2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 11ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA100N04T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO263; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO263
On-state resistance: 7mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
Produkt ist nicht verfügbar
IXTA100N04T2IXYSMOSFET 100 Amps 40V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.79 EUR
10+ 4 EUR
100+ 3.38 EUR
250+ 3.13 EUR
500+ 2.92 EUR
1000+ 2.6 EUR
2500+ 2.46 EUR
IXTA100N04T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO263; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: TO263
On-state resistance: 7mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA100N04T2IXYSDescription: MOSFET N-CH 40V 100A TO263
Produkt ist nicht verfügbar
IXTA100N04T2LittelfuseTrans MOSFET N-CH 40V 100A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA100N04T2-TRLIXYSMOSFET IXTA100N04T2 TRL
Produkt ist nicht verfügbar
IXTA100N15X4IXYSDescription: MOSFET N-CH 150V 100A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 50A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3970 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.33 EUR
50+ 13.03 EUR
100+ 11.66 EUR
500+ 10.29 EUR
1000+ 9.26 EUR
Mindestbestellmenge: 2
IXTA100N15X4IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
1+16.95 EUR
10+ 14.52 EUR
50+ 13.48 EUR
100+ 11.84 EUR
250+ 11.32 EUR
IXTA102N15TIXYSMOSFET 102 Amps 150V 18 Rds
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.69 EUR
10+ 6.67 EUR
50+ 6.44 EUR
100+ 5.42 EUR
250+ 5.26 EUR
500+ 5.03 EUR
IXTA102N15TIXYSDescription: MOSFET N-CH 150V 102A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5220 pF @ 25 V
auf Bestellung 570 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.85 EUR
10+ 7.05 EUR
100+ 5.78 EUR
500+ 4.92 EUR
Mindestbestellmenge: 3
IXTA102N15T-TRLLittelfuseTrans MOSFET N-CH 150V 102A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA10N60PIXYSDescription: MOSFET N-CH 600V 10A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
Produkt ist nicht verfügbar
IXTA10N60PIXYSMOSFET 10.0 Amps 600 V 0.74 Ohm Rds
Produkt ist nicht verfügbar
IXTA10N60PLittelfuseTrans MOSFET N-CH 600V 10A 3-Pin(2+Tab) D2PAK
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA10P15TIXYSDescription: MOSFET P-CH 150V 10A TO263
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Produkt ist nicht verfügbar
IXTA10P15TIXYSMOSFET MSFT P-CH TRENCH GATE
Produkt ist nicht verfügbar
IXTA10P15T-TRLIXYSMOSFET IXTA10P15T TRL
Produkt ist nicht verfügbar
IXTA10P15T-TRLLittelfuseTrans MOSFET P-CH 150V 10A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA10P15T-TRLIXYSDescription: MOSFET P-CH 150V 10A TO263
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Produkt ist nicht verfügbar
IXTA10P50PIXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXTA10P50P - Leistungs-MOSFET, p-Kanal, 500 V, 10 A, 1 ohm, TO-263AA, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 500V
rohsCompliant: YES
Dauer-Drainstrom Id: 10A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: TO-263AA
Anzahl der Pins: 3Pin(s)
Produktpalette: PolarP
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1ohm
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA10P50PLittelfuseTrans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK
auf Bestellung 178 Stücke:
Lieferzeit 14-21 Tag (e)
15+10.31 EUR
18+ 8.54 EUR
25+ 8.14 EUR
50+ 7.76 EUR
100+ 7.38 EUR
Mindestbestellmenge: 15
IXTA10P50PIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 414ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 287 Stücke:
Lieferzeit 7-14 Tag (e)
9+7.99 EUR
10+ 7.19 EUR
14+ 5.18 EUR
Mindestbestellmenge: 9
IXTA10P50PLittelfuseTrans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK
auf Bestellung 2014 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA10P50PIXYSDescription: MOSFET P-CH 500V 10A TO263
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Produkt ist nicht verfügbar
IXTA10P50PLittelfuseTrans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK
auf Bestellung 540 Stücke:
Lieferzeit 14-21 Tag (e)
15+10.46 EUR
18+ 8.67 EUR
25+ 8.35 EUR
50+ 7.87 EUR
100+ 7.56 EUR
Mindestbestellmenge: 15
IXTA10P50PLittelfuseTrans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA10P50PLittelfuseTrans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK
auf Bestellung 540 Stücke:
Lieferzeit 14-21 Tag (e)
17+9.56 EUR
19+ 7.92 EUR
25+ 7.63 EUR
50+ 7.2 EUR
100+ 6.91 EUR
Mindestbestellmenge: 17
IXTA10P50PIXYSMOSFET -10.0 Amps -500V 1.000 Rds
auf Bestellung 862 Stücke:
Lieferzeit 10-14 Tag (e)
1+11.07 EUR
10+ 9.47 EUR
50+ 9.29 EUR
IXTA10P50PLittelfuseTrans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
13+12.41 EUR
25+ 11.42 EUR
50+ 10.55 EUR
100+ 9.79 EUR
250+ 9.1 EUR
Mindestbestellmenge: 13
IXTA10P50PLittelfuseTrans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK
auf Bestellung 178 Stücke:
Lieferzeit 14-21 Tag (e)
15+10.31 EUR
18+ 8.54 EUR
25+ 8.14 EUR
50+ 7.76 EUR
100+ 7.38 EUR
Mindestbestellmenge: 15
IXTA10P50PIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 414ns
auf Bestellung 287 Stücke:
Lieferzeit 14-21 Tag (e)
9+7.99 EUR
10+ 7.19 EUR
14+ 5.18 EUR
Mindestbestellmenge: 9
IXTA10P50PLittelfuseTrans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA10P50P-TRLLittelfuseTrans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
16+10.11 EUR
18+ 8.29 EUR
25+ 7.4 EUR
100+ 6.29 EUR
250+ 5.88 EUR
500+ 4.48 EUR
Mindestbestellmenge: 16
IXTA10P50P-TRLIXYSMOSFET MSFT P-CH POLAR
auf Bestellung 1304 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.84 EUR
10+ 9.28 EUR
25+ 8.68 EUR
100+ 7.74 EUR
250+ 7.5 EUR
500+ 6.93 EUR
800+ 6.3 EUR
IXTA10P50P-TRLLittelfuse Inc.Description: MOSFET P-CH 500V 10A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
auf Bestellung 33559 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.91 EUR
10+ 9.35 EUR
100+ 7.79 EUR
Mindestbestellmenge: 2
IXTA10P50P-TRLLittelfuseTrans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
16+10.11 EUR
18+ 8.29 EUR
25+ 7.4 EUR
100+ 6.29 EUR
250+ 5.88 EUR
500+ 4.48 EUR
Mindestbestellmenge: 16
IXTA10P50P-TRLLittelfuseTrans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
800+5.94 EUR
Mindestbestellmenge: 800
IXTA10P50P-TRLLITTELFUSEDescription: LITTELFUSE - IXTA10P50P-TRL - MOSFET, P-CH, 500V, 10A, TO-263AA
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 500V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 10A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: TO-263AA
Anzahl der Pins: 3Pin(s)
Produktpalette: PolarP Series
productTraceability: No
Kanaltyp: P Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1ohm
directShipCharge: 25
SVHC: No SVHC (17-Dec-2014)
auf Bestellung 484 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA10P50P-TRLLittelfuseTrans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA10P50P-TRLLittelfuse Inc.Description: MOSFET P-CH 500V 10A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
auf Bestellung 32800 Stücke:
Lieferzeit 10-14 Tag (e)
800+6.88 EUR
1600+ 6.19 EUR
2400+ 5.8 EUR
Mindestbestellmenge: 800
IXTA10P50P-TRLLittelfuseTrans MOSFET P-CH 500V 10A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
800+5.41 EUR
Mindestbestellmenge: 800
IXTA110N055PIXYSDescription: MOSFET N-CH 55V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 500mA, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Produkt ist nicht verfügbar
IXTA110N055TIXYSDescription: MOSFET N-CH 55V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Produkt ist nicht verfügbar
IXTA110N055T2IXYSDescription: MOSFET N-CH 55V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 25A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 25 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.66 EUR
50+ 3.7 EUR
100+ 3.17 EUR
Mindestbestellmenge: 4
IXTA110N055T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
Produkt ist nicht verfügbar
IXTA110N055T2LittelfuseTrans MOSFET N-CH 55V 110A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA110N055T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 180W; TO263; 38ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 180W
Case: TO263
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 38ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA110N055T2IXYSMOSFET 110 Amps 55V 0.0066 Rds
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.47 EUR
10+ 4.03 EUR
100+ 3.17 EUR
250+ 3.01 EUR
500+ 2.82 EUR
1000+ 2.45 EUR
IXTA110N055T2-TRLIXYSMOSFET IXTA110N055T2 TRL
Produkt ist nicht verfügbar
IXTA110N055T2-TRLIXYSDescription: MOSFET N-CH 55V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 25A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+2.82 EUR
Mindestbestellmenge: 800
IXTA110N055T2-TRLLittelfuseTrans MOSFET N-CH 55V 110A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA110N055T7IXYSMOSFET 110 Amps 55V 6.7 Rds
Produkt ist nicht verfügbar
IXTA110N055T7IXYSDescription: MOSFET N-CH 55V 110A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Produkt ist nicht verfügbar
IXTA110N12T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 110A; 517W; TO263; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 110A
Power dissipation: 517W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 64ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA110N12T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 110A; 517W; TO263; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 110A
Power dissipation: 517W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 64ns
Produkt ist nicht verfügbar
IXTA110N12T2IXYSDescription: MOSFET N-CH 120V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 55A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6570 pF @ 25 V
Produkt ist nicht verfügbar
IXTA120N04T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO263
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 35ns
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
Mindestbestellmenge: 3
IXTA120N04T2IXYSDescription: MOSFET N-CH 40V 120A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 25A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V
auf Bestellung 1950 Stücke:
Lieferzeit 10-14 Tag (e)
300+2.96 EUR
Mindestbestellmenge: 300
IXTA120N04T2IXYSMOSFET 120 Amps 40V
Produkt ist nicht verfügbar
IXTA120N04T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO263
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 35ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
3+23.84 EUR
8+ 8.94 EUR
22+ 3.25 EUR
Mindestbestellmenge: 3
IXTA120N075T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO263; 50ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 250W
Case: TO263
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 50ns
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.3 EUR
19+ 3.88 EUR
20+ 3.58 EUR
Mindestbestellmenge: 17
IXTA120N075T2IXYSDescription: MOSFET N-CH 75V 120A TO263
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
50+6.27 EUR
Mindestbestellmenge: 50
IXTA120N075T2IXYSMOSFET 120 Amps 75V
Produkt ist nicht verfügbar
IXTA120N075T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO263; 50ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 250W
Case: TO263
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 50ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.3 EUR
19+ 3.88 EUR
20+ 3.58 EUR
Mindestbestellmenge: 17
IXTA120P065TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 295 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.19 EUR
12+ 6.46 EUR
14+ 5.15 EUR
15+ 4.88 EUR
Mindestbestellmenge: 10
IXTA120P065TLittelfuseTrans MOSFET P-CH 65V 120A 3-Pin(2+Tab) D2PAK
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA120P065TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.19 EUR
12+ 6.46 EUR
14+ 5.15 EUR
15+ 4.88 EUR
Mindestbestellmenge: 10
IXTA120P065TIXYSDescription: MOSFET P-CH 65V 120A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
Produkt ist nicht verfügbar
IXTA120P065TIXYSMOSFET -120 Amps -65V 0.01 Rds
auf Bestellung 7797 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.45 EUR
10+ 9.47 EUR
100+ 7.83 EUR
250+ 7.6 EUR
500+ 6.9 EUR
IXTA120P065T-TRLIXYSDescription: MOSFET P-CH 65V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 60A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
Produkt ist nicht verfügbar
IXTA120P065T-TRLIXYSMOSFET IXTA120P065T TRL
Produkt ist nicht verfügbar
IXTA120P065TTRLLittelfuseTrans MOSFET P-CH 65V 120A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA12N50PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
IXTA12N50PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA12N50PLittelfuseTrans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA12N50PIXYSDescription: MOSFET N-CH 500V 12A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
auf Bestellung 524 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.28 EUR
50+ 4.98 EUR
100+ 4.27 EUR
500+ 3.79 EUR
Mindestbestellmenge: 3
IXTA12N50PIXYSMOSFET 12.0 Amps 500 V 0.5 Ohm Rds
auf Bestellung 544 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.41 EUR
10+ 5.9 EUR
50+ 5.17 EUR
100+ 4.35 EUR
500+ 3.94 EUR
1000+ 3.34 EUR
IXTA12N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO263; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA12N65X2LittelfuseTrans MOSFET N-CH 650V 12A 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA12N65X2Littelfuse Inc.Description: MOSFET N-CH 650V 12A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
IXTA12N65X2IXYSMOSFET MSFT N-CH ULTRA JNCT X2 3&44
Produkt ist nicht verfügbar
IXTA12N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO263; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
Produkt ist nicht verfügbar
IXTA12N70X2IXYSMOSFET DiscMSFT NChUltraJnctn X2Class TO-263D2
Produkt ist nicht verfügbar
IXTA130N065T2IXYSDescription: MOSFET N-CH 65V 130A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Produkt ist nicht verfügbar
IXTA130N065T2IXYSMOSFET 130 Amps 65V
Produkt ist nicht verfügbar
IXTA130N065T2LittelfuseTrans MOSFET N-CH 65V 130A Automotive 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA130N10TLittelfuseTrans MOSFET N-CH 100V 130A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA130N10TLITTELFUSEDescription: LITTELFUSE - IXTA130N10T - MOSFET, N-CH, 100V, 130A, TO-263
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 100
Dauer-Drainstrom Id: 130
Qualifikation: -
Verlustleistung Pd: 360
Gate-Source-Schwellenspannung, max.: 4.5
Verlustleistung: 360
Bauform - Transistor: TO-263 (D2PAK)
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3
Produktpalette: TrenchMV Series
Wandlerpolarität: N Channel
Kanaltyp: N Channel
Betriebswiderstand, Rds(on): 0.0091
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.0091
SVHC: To Be Advised
Produkt ist nicht verfügbar
IXTA130N10TIXYSMOSFET 130 Amps 100V 8.5 Rds
Produkt ist nicht verfügbar
IXTA130N10TLittelfuseTrans MOSFET N-CH 100V 130A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA130N10TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 77ns
Produkt ist nicht verfügbar
IXTA130N10TIXYSDescription: MOSFET N-CH 100V 130A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Produkt ist nicht verfügbar
IXTA130N10TLittelfuseTrans MOSFET N-CH 100V 130A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA130N10TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 77ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA130N10T-TRLIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhanced
Reverse recovery time: 77ns
Produkt ist nicht verfügbar
IXTA130N10T-TRLIXYSDescription: MOSFET N-CH 100V 130A TO263
Produkt ist nicht verfügbar
IXTA130N10T-TRLIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhanced
Reverse recovery time: 77ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA130N10T-TRLIXYSDescription: MOSFET N-CH 100V 130A TO263
Produkt ist nicht verfügbar
IXTA130N10T-TRLIXYSMOSFET IXTA130N10T TRL
auf Bestellung 798 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.31 EUR
10+ 6.99 EUR
25+ 6.6 EUR
100+ 5.67 EUR
250+ 5.33 EUR
500+ 5.26 EUR
800+ 4.38 EUR
IXTA130N10T7IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 77ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA130N10T7IXYSDescription: MOSFET N-CH 100V 130A TO263
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
50+6.86 EUR
Mindestbestellmenge: 50
IXTA130N10T7IXYSMOSFET 130 Amps 100V 8.5 Rds
Produkt ist nicht verfügbar
IXTA130N10T7IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 77ns
Produkt ist nicht verfügbar
IXTA130N10TTRLIxys CorporationTrans MOSFET N-CH 100V 130A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA130N15X4IXYSDescription: MOSFET N-CH 150V 130A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 65A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V
auf Bestellung 1524 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.43 EUR
50+ 14.72 EUR
100+ 13.17 EUR
500+ 11.62 EUR
1000+ 10.46 EUR
IXTA130N15X4IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.95 EUR
10+ 19.82 EUR
50+ 18.9 EUR
100+ 16.4 EUR
IXTA130N15X4-7IXYSDescription: MOSFET N-CH 150V 130A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 65A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
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50+ 14.72 EUR
100+ 13.17 EUR
500+ 11.62 EUR
1000+ 10.46 EUR
IXTA130N15X4-7IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.5 EUR
10+ 17.6 EUR
50+ 16.79 EUR
100+ 14.56 EUR
IXTA140N055T2IXYSDescription: MOSFET N-CH 55V 140A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
auf Bestellung 1350 Stücke:
Lieferzeit 10-14 Tag (e)
300+3.24 EUR
Mindestbestellmenge: 300
IXTA140N055T2IXYSMOSFET MSFT N-CH TRENCH GATE -GEN2
Produkt ist nicht verfügbar
IXTA140N12T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO263; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Power dissipation: 577W
Case: TO263
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 65ns
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
8+8.94 EUR
Mindestbestellmenge: 8
IXTA140N12T2LittelfusePower MOSFET
Produkt ist nicht verfügbar
IXTA140N12T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO263; 65ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 140A
Power dissipation: 577W
Case: TO263
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 65ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
8+8.94 EUR
10+ 7.15 EUR
Mindestbestellmenge: 8
IXTA140N12T2IXYSDescription: MOSFET N-CH 120V 140A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 577W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)
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Mindestbestellmenge: 50
IXTA140N12T2IXYSMOSFET MSFT N-CH TRENCH GATE -GEN2
Produkt ist nicht verfügbar
IXTA140P05TLittelfuseTrans MOSFET P-CH 50V 140A 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA140P05TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA140P05TIXYSDescription: MOSFET P-CH 50V 140A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 70A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
auf Bestellung 712 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.46 EUR
10+ 10.68 EUR
100+ 8.9 EUR
500+ 7.85 EUR
Mindestbestellmenge: 2
IXTA140P05TIXYSMOSFET -140 Amps -50V 0.008 Rds
auf Bestellung 207 Stücke:
Lieferzeit 10-14 Tag (e)
1+12.2 EUR
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100+ 9.26 EUR
250+ 9.06 EUR
500+ 8.68 EUR
IXTA140P05TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -140A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 53ns
Produkt ist nicht verfügbar
IXTA140P05T-TRLIXYSDescription: IXTA140P05T
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 70A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
Produkt ist nicht verfügbar
IXTA140P05T-TRLLittelfuseMOSFET MOSFET DISCRETE
Produkt ist nicht verfügbar
IXTA14N60PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO263; 500ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Drain current: 14A
On-state resistance: 0.55Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Features of semiconductor devices: standard power mosfet
Gate charge: 36nC
Kind of channel: enhanced
Reverse recovery time: 0.5µs
Drain-source voltage: 600V
Produkt ist nicht verfügbar
IXTA14N60PLittelfuse Inc.Description: MOSFET N-CH 600V 14A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
auf Bestellung 220 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.49 EUR
50+ 4.35 EUR
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Mindestbestellmenge: 4
IXTA14N60PIXYSMOSFET 14.0 Amps 600 V 0.55 Ohm Rds
Produkt ist nicht verfügbar
IXTA14N60PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO263; 500ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Drain current: 14A
On-state resistance: 0.55Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Features of semiconductor devices: standard power mosfet
Gate charge: 36nC
Kind of channel: enhanced
Reverse recovery time: 0.5µs
Drain-source voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA14N60PTRLLittelfuseIXTA14N60PTRL
Produkt ist nicht verfügbar
IXTA150N15X4Littelfuse Inc.Description: MOSFET N-CH 150V 150A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 75A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
auf Bestellung 186 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.36 EUR
50+ 12.88 EUR
Mindestbestellmenge: 2
IXTA150N15X4LittelfuseX4-Class Power MOSFET
Produkt ist nicht verfügbar
IXTA150N15X4IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
auf Bestellung 101 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.7 EUR
10+ 19.38 EUR
50+ 17.51 EUR
IXTA150N15X4-7IXYSDescription: MOSFET N-CH 150V 150A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 75A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Produkt ist nicht verfügbar
IXTA150N15X4-7LittelfuseX4-Class Power MOSFET
Produkt ist nicht verfügbar
IXTA150N15X4-7IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
Produkt ist nicht verfügbar
IXTA152N085TIXYSDescription: MOSFET N-CH 85V 152A TO-263
Produkt ist nicht verfügbar
IXTA152N085T7IXYSDescription: MOSFET N-CH 85V 152A TO-263-7
Produkt ist nicht verfügbar
IXTA15N50L2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO263; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
Produkt ist nicht verfügbar
IXTA15N50L2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO263; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA15N50L2LittelfuseTrans MOSFET N-CH 500V 15A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA15N50L2IXYSMOSFET MSFT N-CH LINEAR L2
auf Bestellung 279 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.12 EUR
10+ 19.5 EUR
25+ 18.97 EUR
50+ 17.88 EUR
100+ 16.95 EUR
IXTA15N50L2LittelfuseTrans MOSFET N-CH 500V 15A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA15N50L2IXYSDescription: MOSFET N-CH 500V 15A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V
auf Bestellung 350 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.28 EUR
50+ 18.03 EUR
100+ 16.97 EUR
IXTA15N50L2-TRLLittelfuseTrans MOSFET N-CH 500V 15A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA15N50L2-TRLIXYSMOSFET IXTA15N50L2 TRL
Produkt ist nicht verfügbar
IXTA15N50L2-TRLIXYSDescription: MOSFET N-CH 500V 15A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 7.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 25 V
Produkt ist nicht verfügbar
IXTA15P15TIXYSIXTA15P15T SMD P channel transistors
Produkt ist nicht verfügbar
IXTA15P15TLittelfuseTrans MOSFET P-CH 150V 15A 3-Pin(2+Tab) TO-263
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA15P15TIXYSMOSFET TenchP Power MOSFET
Produkt ist nicht verfügbar
IXTA15P15TIXYSDescription: MOSFET P-CH 150V 15A TO-263
Produkt ist nicht verfügbar
IXTA15P15T-A2IXYSMOSFET -150V -15A
Produkt ist nicht verfügbar
IXTA160N04T2IXYSDescription: MOSFET N-CH 40V 160A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
Produkt ist nicht verfügbar
IXTA160N04T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO263; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO263
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.3 EUR
19+ 3.88 EUR
24+ 3.07 EUR
25+ 2.92 EUR
Mindestbestellmenge: 17
IXTA160N04T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO263; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO263
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.3 EUR
19+ 3.88 EUR
24+ 3.07 EUR
25+ 2.92 EUR
Mindestbestellmenge: 17
IXTA160N04T2IXYSMOSFET 160Amps 40V
auf Bestellung 66 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.86 EUR
10+ 6.02 EUR
50+ 5.1 EUR
100+ 4.65 EUR
250+ 4.1 EUR
500+ 3.96 EUR
1000+ 3.82 EUR
IXTA160N075TIXYSMOSFET 160 Amps 75V 5.5 Rds
Produkt ist nicht verfügbar
IXTA160N075TIXYSDescription: MOSFET N-CH 75V 160A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Produkt ist nicht verfügbar
IXTA160N075T7IXYSMOSFET 160 Amps 75V 5.5 Rds
Produkt ist nicht verfügbar
IXTA160N075T7IXYSDescription: MOSFET N-CH 75V 160A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Produkt ist nicht verfügbar
IXTA160N085TIXYSDescription: MOSFET N-CH 85V 160A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
Produkt ist nicht verfügbar
IXTA160N10TLittelfuseTrans MOSFET N-CH 100V 160A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA160N10TIXYSMOSFET 160 Amps 100V 6.9 Rds
Produkt ist nicht verfügbar
IXTA160N10TIXYSDescription: MOSFET N-CH 100V 160A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Produkt ist nicht verfügbar
IXTA160N10T7IXYSMOSFET 160 Amps 100V 6.9 Rds
Produkt ist nicht verfügbar
IXTA160N10T7IXYSDescription: MOSFET N-CH 100V 160A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Produkt ist nicht verfügbar
IXTA16N50PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
IXTA16N50PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA16N50PIXYSMOSFET 16.0 Amps 500 V 0.4 Ohm Rds
auf Bestellung 99 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.76 EUR
10+ 6.72 EUR
50+ 5.7 EUR
100+ 5.09 EUR
250+ 4.77 EUR
500+ 4.63 EUR
1000+ 4.36 EUR
IXTA16N50PIXYSDescription: MOSFET N-CH 500V 16A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
300+4.9 EUR
Mindestbestellmenge: 300
IXTA16N50P-TRLIXYSMOSFET IXTA16N50P TRL
Produkt ist nicht verfügbar
IXTA16N50P-TRLIXYSDescription: MOSFET N-CH 500V 16A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Produkt ist nicht verfügbar
IXTA16N50PTRLLittelfuseTrans MOSFET N-CH 500V 16A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA170N075T2IXYSMOSFET 170 Amps 75V
Produkt ist nicht verfügbar
IXTA170N075T2IXYSDescription: MOSFET N-CH 75V 170A TO263
auf Bestellung 2050 Stücke:
Lieferzeit 10-14 Tag (e)
IXTA170N075T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO263; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO263
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 63ns
Produkt ist nicht verfügbar
IXTA170N075T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO263; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO263
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 63ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA180N055TIXYSDescription: MOSFET N-CH 55V 180A TO263
Produkt ist nicht verfügbar
IXTA180N085TIXYSDescription: MOSFET N-CH 85V 180A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Produkt ist nicht verfügbar
IXTA180N085T7IXYSDescription: MOSFET N-CH 85V 180A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Produkt ist nicht verfügbar
IXTA180N10TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.08 EUR
14+ 5.48 EUR
17+ 4.36 EUR
18+ 4.12 EUR
Mindestbestellmenge: 12
IXTA180N10TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.08 EUR
14+ 5.48 EUR
17+ 4.36 EUR
18+ 4.12 EUR
Mindestbestellmenge: 12
IXTA180N10TLittelfuseTrans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) D2PAK
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA180N10TLittelfuse Inc.Description: MOSFET N-CH 100V 180A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Produkt ist nicht verfügbar
IXTA180N10TIXYSMOSFET 180 Amps 100V 6.1 Rds
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.72 EUR
10+ 8.25 EUR
50+ 6.9 EUR
100+ 6.14 EUR
250+ 5.91 EUR
500+ 5.74 EUR
1000+ 5.68 EUR
IXTA180N10TLITTELFUSEDescription: LITTELFUSE - IXTA180N10T - MOSFET, N-CH, 100V, 180A, TO-263
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 100
Dauer-Drainstrom Id: 180
Qualifikation: -
Verlustleistung Pd: 480
Gate-Source-Schwellenspannung, max.: 4.5
Verlustleistung: 480
Bauform - Transistor: TO-263 (D2PAK)
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3
Produktpalette: Trench Series
Wandlerpolarität: N Channel
Kanaltyp: N Channel
Betriebswiderstand, Rds(on): 0.0057
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.0057
SVHC: To Be Advised
Produkt ist nicht verfügbar
IXTA180N10T-TRLLittelfuseTrans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA180N10T-TRLLittelfuse Inc.Description: MOSFET N-CH 100V 180A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Produkt ist nicht verfügbar
IXTA180N10T-TRLIXYSMOSFET IXTA180N10T TRL
auf Bestellung 645 Stücke:
Lieferzeit 199-203 Tag (e)
1+9.64 EUR
10+ 8.1 EUR
25+ 7.64 EUR
100+ 6.55 EUR
250+ 6.2 EUR
500+ 5.83 EUR
800+ 5.3 EUR
IXTA180N10T-TRLLittelfuse Inc.Description: MOSFET N-CH 100V 180A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
auf Bestellung 538 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.72 EUR
10+ 8.16 EUR
100+ 6.6 EUR
Mindestbestellmenge: 2
IXTA180N10T7IXYSDescription: MOSFET N-CH 100V 180A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Produkt ist nicht verfügbar
IXTA180N10T7LittelfuseTrans MOSFET N-CH 100V 180A Automotive 7-Pin(6+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA180N10T7IXYSMOSFET 180 Amps 100V 6.1 Rds
Produkt ist nicht verfügbar
IXTA180N10T7-TRLIXYSMOSFET IXTA180N10T7 TRL
Produkt ist nicht verfügbar
IXTA180N10T7-TRLIXYSDescription: MOSFET N-CH 100V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Produkt ist nicht verfügbar
IXTA180N10TTRLLittelfuseTrans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA182N055TIXYSDescription: MOSFET N-CH 55V 182A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
Produkt ist nicht verfügbar
IXTA182N055TIXYSMOSFET 182 Amps 55V 4.4 Rds
Produkt ist nicht verfügbar
IXTA182N055T7IXYSDescription: MOSFET N-CH 55V 182A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
Produkt ist nicht verfügbar
IXTA182N055T7IXYSMOSFET 182 Amps 55V 4.4 Rds
Produkt ist nicht verfügbar
IXTA18P10TIXYSMOSFET 18 Amps 100V 0.12 Rds
Produkt ist nicht verfügbar
IXTA18P10TIXYSDescription: MOSFET P-CH 100V 18A TO-263
Produkt ist nicht verfügbar
IXTA18P10TLittelfuseTrans MOSFET P-CH 100V 18A 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA18P10TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 62ns
Produkt ist nicht verfügbar
IXTA18P10TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 62ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA1970-TRLIXYSDescription: MOSFET N-CH TO263
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
IXTA1970-TRLLittelfuseLittelfuse IXTA1970 TRL
Produkt ist nicht verfügbar
IXTA1970TRLIxys CorporationTRENCHT2 POWER MOSFET
Produkt ist nicht verfügbar
IXTA1N100LittelfuseTrans MOSFET N-CH Si 1KV 1.5A 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA1N100Ixys CorporationTrans MOSFET N-CH Si 1KV 1.5A 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA1N100IXYSDescription: MOSFET N-CH 1000V 1.5A TO-263
auf Bestellung 995 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.27 EUR
10+ 6.52 EUR
100+ 5.34 EUR
500+ 4.55 EUR
Mindestbestellmenge: 3
IXTA1N100PIXYSMOSFET 1 Amps 1000V 14 Rds
auf Bestellung 300 Stücke:
Lieferzeit 480-484 Tag (e)
1+4.58 EUR
10+ 3.82 EUR
100+ 3.03 EUR
IXTA1N100PLittelfuseTrans MOSFET N-CH 1KV 1A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA1N100PIXYSDescription: MOSFET N-CH 1000V 1A TO263
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.82 EUR
10+ 4.33 EUR
Mindestbestellmenge: 4
IXTA1N100PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO263; 750ns
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 50W
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 1A
On-state resistance: 15Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA1N100PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1A; 50W; TO263; 750ns
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 50W
Features of semiconductor devices: standard power mosfet
Kind of channel: enhanced
Reverse recovery time: 750ns
Drain-source voltage: 1kV
Drain current: 1A
On-state resistance: 15Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
IXTA1N100P-TRLLittelfuseTrans MOSFET N-CH 1KV 1A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA1N120PIXYSDescription: MOSFET N-CH 1200V 1A TO263
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.18 EUR
10+ 6.87 EUR
100+ 5.56 EUR
Mindestbestellmenge: 3
IXTA1N120PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Power dissipation: 63W
Case: TO263
On-state resistance: 20Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA1N120PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 1A
Power dissipation: 63W
Case: TO263
On-state resistance: 20Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
IXTA1N120PLittelfuseTrans MOSFET N-CH 1.2KV 1A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA1N120PIXYSMOSFET 1 Amps 1200V 20 Rds
auf Bestellung 648 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.34 EUR
10+ 7.02 EUR
50+ 5.7 EUR
100+ 5.16 EUR
IXTA1N120P-TRLIXYSDescription: MOSFET N-CH 1200V 1A TO263
Produkt ist nicht verfügbar
IXTA1N170DHVLittelfuseTrans MOSFET N-CH 1.7KV 3-Pin(2+Tab) TO-263HV
Produkt ist nicht verfügbar
IXTA1N170DHVIXYSDescription: MOSFET N-CH 1700V 1A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 290W (Tc)
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
auf Bestellung 305 Stücke:
Lieferzeit 10-14 Tag (e)
1+35.04 EUR
50+ 29.05 EUR
100+ 27.23 EUR
IXTA1N170DHVLITTELFUSEDescription: LITTELFUSE - IXTA1N170DHV - MOSFET, N-CH, 1.7KV, 1A, TO-263HV
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 1.7
Dauer-Drainstrom Id: 1
Qualifikation: -
Verlustleistung Pd: 290
Gate-Source-Schwellenspannung, max.: -
Verlustleistung: 290
Bauform - Transistor: TO-263HV
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: N Channel
Kanaltyp: N Channel
Betriebswiderstand, Rds(on): 16
Rds(on)-Prüfspannung: 0
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 16
SVHC: To Be Advised
Produkt ist nicht verfügbar
IXTA1N170DHVIXYSMOSFET MSFT N-CH DEPL MODE-STD
auf Bestellung 2437 Stücke:
Lieferzeit 10-14 Tag (e)
1+34.99 EUR
10+ 33.02 EUR
25+ 32.56 EUR
50+ 27.88 EUR
100+ 27.12 EUR
250+ 26.47 EUR
500+ 25.29 EUR
IXTA1N170DHVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 1A
Power dissipation: 290W
Case: TO263HV
On-state resistance: 16Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 30ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA1N170DHVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 1A
Power dissipation: 290W
Case: TO263HV
On-state resistance: 16Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 30ns
Produkt ist nicht verfügbar
IXTA1N170DHVLittelfuseTrans MOSFET N-CH 1.7KV 3-Pin(2+Tab) TO-263HV
Produkt ist nicht verfügbar
IXTA1N170DHV-TRLLittelfuseLittelfuse MOSFET DISCRETE TO-263HV
Produkt ist nicht verfügbar
IXTA1N170DHVTRLLittelfuseIXTA1N170DHVTRL
Produkt ist nicht verfügbar
IXTA1N200P3HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO263HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 40Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA1N200P3HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO263HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 40Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
Produkt ist nicht verfügbar
IXTA1N200P3HVLittelfuseTrans MOSFET N-CH 2KV 1A 3-Pin(2+Tab) TO-263HV
Produkt ist nicht verfügbar
IXTA1N200P3HVIXYSMOSFET 2000V/1A HV Power MOSFET, TO-263HV
auf Bestellung 3570 Stücke:
Lieferzeit 10-14 Tag (e)
1+15.4 EUR
10+ 14.33 EUR
50+ 11.39 EUR
100+ 10.12 EUR
250+ 9.98 EUR
500+ 9.4 EUR
IXTA1N200P3HVLittelfuse Inc.Description: MOSFET N-CH 2000V 1A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V
Produkt ist nicht verfügbar
IXTA1N200P3HV-TRLLittelfuse Inc.Description: MOSFET N-CH 2000V 1A TO263HV
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V
Produkt ist nicht verfügbar
IXTA1N200P3HV-TRLLittelfuse Inc.Description: MOSFET N-CH 2000V 1A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V
Produkt ist nicht verfügbar
IXTA1N200P3HV-TRLLittelfuseTrans MOSFET N-CH 2KV 1A 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA1N200P3HV.LITTELFUSEDescription: LITTELFUSE - IXTA1N200P3HV. - MOSFET, N-CH, 2KV, 1A, TO-263HV
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 2kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 125W
Bauform - Transistor: TO-263HV
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: No
Kanaltyp: N Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 40ohm
directShipCharge: 25
SVHC: No SVHC (17-Dec-2014)
auf Bestellung 27387 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA1N200P3HVTRLIXYSDescription: MOFET N-CH 2000V 1.0A TO-263HV
auf Bestellung 172 Stücke:
Lieferzeit 10-14 Tag (e)
IXTA1N200P3HVTRLIXYSDescription: MOFET N-CH 2000V 1.0A TO-263HV
Produkt ist nicht verfügbar
IXTA1N80IXYSDescription: MOSFET N-CH 800V 750MA TO-263
Produkt ist nicht verfügbar
IXTA1R4N100PIXYSMOSFET 1.4 Amps 1000V 11 Rds
auf Bestellung 486 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.23 EUR
10+ 4.38 EUR
50+ 4.12 EUR
100+ 3.54 EUR
250+ 3.34 EUR
IXTA1R4N100PIXYSDescription: MOSFET N-CH 1000V 1.4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 416 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.19 EUR
50+ 4.11 EUR
100+ 3.52 EUR
Mindestbestellmenge: 4
IXTA1R4N100PLittelfuseTrans MOSFET N-CH 1KV 1.4A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA1R4N100PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 63W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 11.8Ω
Mounting: SMD
Gate charge: 17.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA1R4N100PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.4A
Pulsed drain current: 3A
Power dissipation: 63W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 11.8Ω
Mounting: SMD
Gate charge: 17.8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
Produkt ist nicht verfügbar
IXTA1R4N100PTRLIXYSMOSFET MSFT N-CH STD-POLAR
Produkt ist nicht verfügbar
IXTA1R4N100PTRLIXYSDescription: MOSFET N-CH 1000V 1.4A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11.8Ohm @ 700mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Produkt ist nicht verfügbar
IXTA1R4N120PLittelfuseTrans MOSFET N-CH 1.2KV 1.4A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA1R4N120PIXYSMOSFET 1.4 Amps 1200V 15 Rds
auf Bestellung 256 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.4 EUR
10+ 7.88 EUR
50+ 5.4 EUR
100+ 5.39 EUR
500+ 5.28 EUR
1000+ 4.89 EUR
IXTA1R4N120PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Case: TO263
Polarisation: unipolar
On-state resistance: 13Ω
Type of transistor: N-MOSFET
Power dissipation: 86W
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 24.8nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 3A
Mounting: SMD
Reverse recovery time: 900ns
Drain-source voltage: 1.2kV
Drain current: 1.4A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA1R4N120PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 1.4A; Idm: 3A; 86W
Case: TO263
Polarisation: unipolar
On-state resistance: 13Ω
Type of transistor: N-MOSFET
Power dissipation: 86W
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 24.8nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 3A
Mounting: SMD
Reverse recovery time: 900ns
Drain-source voltage: 1.2kV
Drain current: 1.4A
Produkt ist nicht verfügbar
IXTA1R4N120PIXYSDescription: MOSFET N-CH 1200V 1.4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V
auf Bestellung 350 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.45 EUR
50+ 7.49 EUR
100+ 6.42 EUR
Mindestbestellmenge: 2
IXTA1R4N120P-TRLIXYSDescription: MOSFET N-CH 1200V 1.4A TO263
Produkt ist nicht verfügbar
IXTA1R4N120P-TRLLittelfuseTrans MOSFET N-CH 1.2KV 1.4A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA1R6N100D2IXYSMOSFET N-CH MOSFETS (D2) 1000V 800MA
auf Bestellung 575 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.11 EUR
10+ 5.26 EUR
50+ 4.45 EUR
500+ 4.01 EUR
1000+ 3.29 EUR
IXTA1R6N100D2IXYSIXTA1R6N100D2 SMD N channel transistors
Produkt ist nicht verfügbar
IXTA1R6N100D2LittelfuseTrans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) D2PAK
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
300+5.75 EUR
Mindestbestellmenge: 300
IXTA1R6N100D2LittelfuseTrans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA1R6N100D2LittelfuseTrans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) D2PAK
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
50+4.04 EUR
100+ 3.19 EUR
Mindestbestellmenge: 50
IXTA1R6N100D2LittelfuseTrans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA1R6N100D2IXYSDescription: MOSFET N-CH 1000V 1.6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
auf Bestellung 121 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.05 EUR
50+ 4.8 EUR
100+ 4.12 EUR
Mindestbestellmenge: 3
IXTA1R6N100D2-TRLIXYSDescription: MOSFET N-CH 1000V 1.6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Produkt ist nicht verfügbar
IXTA1R6N100D2-TRLIXYSMOSFET IXTA1R6N100D2 TRL
Produkt ist nicht verfügbar
IXTA1R6N100D2-TRLLittelfuseTrans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA1R6N100D2HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 970ns
Produkt ist nicht verfügbar
IXTA1R6N100D2HVLittelfuseHigh Voltage Depletion Mode MOSFET
Produkt ist nicht verfügbar
IXTA1R6N100D2HVIXYSMOSFET MSFT N-CH DEPL MODE-D2
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.01 EUR
10+ 7.8 EUR
50+ 7.13 EUR
100+ 6.11 EUR
250+ 5.9 EUR
500+ 5.79 EUR
IXTA1R6N100D2HVLittelfuseHigh Voltage Depletion Mode MOSFET
Produkt ist nicht verfügbar
IXTA1R6N100D2HVLittelfuseHigh Voltage Depletion Mode MOSFET
Produkt ist nicht verfügbar
IXTA1R6N100D2HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 970ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA1R6N100D2HVIXYSDescription: MOSFET N-CH 1000V 1.6A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 10 V
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.94 EUR
50+ 7.08 EUR
100+ 6.07 EUR
Mindestbestellmenge: 2
IXTA1R6N100D2HV-TRLLittelfuseIXTA1R6N100D2HV-TRL
Produkt ist nicht verfügbar
IXTA1R6N100D2TRLLittelfuseTrans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA1R6N50D2IXYSIXTA1R6N50D2 SMD N channel transistors
Produkt ist nicht verfügbar
IXTA1R6N50D2IXYSDescription: MOSFET N-CH 500V 1.6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
auf Bestellung 107 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.05 EUR
50+ 4.8 EUR
100+ 4.12 EUR
Mindestbestellmenge: 3
IXTA1R6N50D2IXYSMOSFET N-CH MOSFETS (D2) 500V 1.6A
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.95 EUR
10+ 5.35 EUR
50+ 5.05 EUR
100+ 4.38 EUR
IXTA1R6N50D2LittelfuseTrans MOSFET N-CH 500V 1.6A 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA200N055T2Littelfuse Inc.Description: MOSFET N-CH 55V 200A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.69 EUR
50+ 5.31 EUR
100+ 4.55 EUR
Mindestbestellmenge: 3
IXTA200N055T2IXYSMOSFET 200 Amps 55V 0.0042 Rds
Produkt ist nicht verfügbar
IXTA200N055T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 200A
Power dissipation: 360W
Case: TO263
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 49ns
Produkt ist nicht verfügbar
IXTA200N055T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 200A
Power dissipation: 360W
Case: TO263
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 49ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA200N055T2-7IXYSMOSFET MSFT N-CH TRENCH GATE -GEN2
Produkt ist nicht verfügbar
IXTA200N055T2-7IXYSDescription: MOSFET N-CH 55V 200A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 25 V
Produkt ist nicht verfügbar
IXTA200N055T2-TRLIXYSDescription: MOSFET N-CH 55V 200A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 25 V
Produkt ist nicht verfügbar
IXTA200N055T2-TRLLittelfuseTrans MOSFET N-CH 55V 200A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA200N055T2-TRLIXYSMOSFET IXTA200N055T2 TRL
Produkt ist nicht verfügbar
IXTA200N075TIXYSDescription: MOSFET N-CH 75V 200A TO-263
Produkt ist nicht verfügbar
IXTA200N075T7IXYSDescription: MOSFET N-CH 75V 200A TO-263-7
Produkt ist nicht verfügbar
IXTA200N085TIXYSDescription: MOSFET N-CH 85V 200A TO263
Produkt ist nicht verfügbar
IXTA200N085TIXYSMOSFET 200 Amps 85V 5.0 Rds
Produkt ist nicht verfügbar
IXTA200N085T7IXYSDescription: MOSFET N-CH 85V 200A TO263-7
Produkt ist nicht verfügbar
IXTA200N085T7IXYSMOSFET 200 Amps 85V 5.0 Rds
Produkt ist nicht verfügbar
IXTA20N65XIXYSDescription: MOSFET N-CH 650V 20A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Produkt ist nicht verfügbar
IXTA20N65XIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
Produkt ist nicht verfügbar
IXTA20N65XIXYSMOSFET 650V/9A Power MOSFET
Produkt ist nicht verfügbar
IXTA20N65XIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 0.35µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA20N65X-TRLIXYSMOSFET IXTA20N65X TRL
Produkt ist nicht verfügbar
IXTA20N65X-TRLIXYSDescription: MOSFET N-CH 650V 20A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Produkt ist nicht verfügbar
IXTA20N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 22A; 290W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 22A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.45 EUR
13+ 5.81 EUR
16+ 4.6 EUR
17+ 4.36 EUR
Mindestbestellmenge: 12
IXTA20N65X2IXYSDescription: MOSFET N-CH 650V 20A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Produkt ist nicht verfügbar
IXTA20N65X2IXYSMOSFET MSFT N-CH ULTRA JNCT X2 3&44
Produkt ist nicht verfügbar
IXTA20N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 22A; 290W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 22A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.45 EUR
13+ 5.81 EUR
16+ 4.6 EUR
17+ 4.36 EUR
Mindestbestellmenge: 12
IXTA220N04T2IXYSDescription: MOSFET N-CH 40V 220A TO-263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
Produkt ist nicht verfügbar
IXTA220N04T2LittelfuseTrans MOSFET N-CH 40V 220A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA220N04T2IXYSMOSFET 220 Amps 40V 0.0035 Rds
Produkt ist nicht verfügbar
IXTA220N04T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 45ns
Produkt ist nicht verfügbar
IXTA220N04T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 45ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA220N04T2LittelfuseTrans MOSFET N-CH 40V 220A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA220N04T2 TRLIxys CorporationTrans MOSFET N-CH 40V 220A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA220N04T2-7IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263-7; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263-7
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 45ns
Produkt ist nicht verfügbar
IXTA220N04T2-7IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263-7; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263-7
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 45ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA220N04T2-7IXYSDescription: MOSFET N-CH 40V 220A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
Produkt ist nicht verfügbar
IXTA220N04T2-7IXYSMOSFET 220 Amps 40V 0.0035 Rds
Produkt ist nicht verfügbar
IXTA220N04T2-7TRLLittelfuseIXTA220N04T2-7TRL
Produkt ist nicht verfügbar
IXTA220N04T2-TRLLittelfuseTrans MOSFET N-CH 40V 220A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA220N04T2-TRLIXYSDescription: MOSFET N-CH 40V 220A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
Produkt ist nicht verfügbar
IXTA220N04T2-TRLIXYSMOSFET IXTA220N04T2 TRL
Produkt ist nicht verfügbar
IXTA220N055TIXYSDescription: MOSFET N-CH 55V 220A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Produkt ist nicht verfügbar
IXTA220N055T7IXYSDescription: MOSFET N-CH 55V 220A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Produkt ist nicht verfügbar
IXTA220N075TIXYSDescription: MOSFET N-CH 75V 220A TO263
Produkt ist nicht verfügbar
IXTA220N075T7IXYSDescription: MOSFET N-CH 75V 220A TO263-7
Produkt ist nicht verfügbar
IXTA230N04T4IXYSMOSFET Disc MSFT NChTrenchGate-Gen4 TO-263D2
Produkt ist nicht verfügbar
IXTA230N04T4IXYSDescription: MOSFET N-CH 40V 230A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 115A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Produkt ist nicht verfügbar
IXTA230N04T4IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO263
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
Produkt ist nicht verfügbar
IXTA230N04T4IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO263
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA230N075T2LittelfuseTrans MOSFET N-CH 75V 230A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA230N075T2IXYSIXTA230N075T2 SMD N channel transistors
Produkt ist nicht verfügbar
IXTA230N075T2IXYSMOSFET 230 Amps 75V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
IXTA230N075T2IXYSDescription: MOSFET N-CH 75V 230A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.46 EUR
10+ 10.35 EUR
100+ 8.57 EUR
Mindestbestellmenge: 2
IXTA230N075T2-7IXYSIXTA230N075T2-7 SMD N channel transistors
Produkt ist nicht verfügbar
IXTA230N075T2-7IXYSMOSFET
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
IXTA230N075T2-7IXYSDescription: MOSFET N-CH 75V 230A TO-263
Produkt ist nicht verfügbar
IXTA240N055TIXYSDescription: MOSFET N-CH 55V 240A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Produkt ist nicht verfügbar
IXTA240N055T7IXYSDescription: MOSFET N-CH 55V 240A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Produkt ist nicht verfügbar
IXTA24N65X2IXYSDescription: MOSFET N-CH 650V 24A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
Produkt ist nicht verfügbar
IXTA24N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
Produkt ist nicht verfügbar
IXTA24N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA24N65X2IXYSMOSFET MSFT N-CH ULTRA JNCT X2 3&44
Produkt ist nicht verfügbar
IXTA24N65X2LittelfuseTrans MOSFET N-CH 650V 24A 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA24N65X2TRLLittelfuseIXTA24N65X2TRL
Produkt ist nicht verfügbar
IXTA24P085TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -24A; 83W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 83W
Gate charge: 41nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -24A
Kind of channel: enhanced
Drain-source voltage: -85V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Reverse recovery time: 40ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.25 EUR
23+ 3.1 EUR
Mindestbestellmenge: 22
IXTA24P085TIXYSMOSFET 24 Amps 85V 0.065 Rds
auf Bestellung 288 Stücke:
Lieferzeit 10-14 Tag (e)
IXTA24P085TIXYSDescription: MOSFET P-CH 85V 24A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 12A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 25 V
auf Bestellung 3324 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.4 EUR
50+ 3.49 EUR
100+ 2.99 EUR
500+ 2.66 EUR
1000+ 2.28 EUR
2000+ 2.14 EUR
Mindestbestellmenge: 4
IXTA24P085TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -24A; 83W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 83W
Gate charge: 41nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -24A
Kind of channel: enhanced
Drain-source voltage: -85V
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Reverse recovery time: 40ns
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.25 EUR
Mindestbestellmenge: 22
IXTA260N055T2IXYSDescription: MOSFET N-CH 55V 260A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
Produkt ist nicht verfügbar
IXTA260N055T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Drain current: 260A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 0.14µC
Kind of channel: enhanced
Reverse recovery time: 60ns
Drain-source voltage: 55V
Produkt ist nicht verfügbar
IXTA260N055T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Drain current: 260A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 0.14µC
Kind of channel: enhanced
Reverse recovery time: 60ns
Drain-source voltage: 55V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA260N055T2IXYSMOSFET MSFT N-CH TRENCH GATE -GEN2
Produkt ist nicht verfügbar
IXTA260N055T2-7IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263-7
Drain current: 260A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 0.14µC
Kind of channel: enhanced
Reverse recovery time: 60ns
Drain-source voltage: 55V
Produkt ist nicht verfügbar
IXTA260N055T2-7LittelfuseTrans MOSFET N-CH 55V 260A Automotive 7-Pin(6+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA260N055T2-7IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263-7
Drain current: 260A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 0.14µC
Kind of channel: enhanced
Reverse recovery time: 60ns
Drain-source voltage: 55V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA260N055T2-7IXYSMOSFET 260 Amps 55V
Produkt ist nicht verfügbar
IXTA260N055T2-7IXYSDescription: MOSFET N-CH 55V 260A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
Produkt ist nicht verfügbar
IXTA26P10TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA26P10TIXYSMOSFET TenchP Power MOSFET
Produkt ist nicht verfügbar
IXTA26P10TIXYSDescription: MOSFET P-CH 100V 26A TO-263
Produkt ist nicht verfügbar
IXTA26P10TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
IXTA26P10TLittelfuseTrans MOSFET P-CH 100V 26A 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA26P20PLittelfuse Inc.Description: MOSFET P-CH 200V 26A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
Produkt ist nicht verfügbar
IXTA26P20PIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.17Ω
Drain current: -26A
Drain-source voltage: -200V
Gate charge: 56nC
Reverse recovery time: 240ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 300W
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.32 EUR
12+ 5.96 EUR
13+ 5.65 EUR
Mindestbestellmenge: 9
IXTA26P20PLittelfuseTrans MOSFET P-CH 200V 26A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA26P20PIXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXTA26P20P - Leistungs-MOSFET, p-Kanal, 200 V, 26 A, 0.17 ohm, TO-263AA, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 200
Dauer-Drainstrom Id: 26
hazardous: false
Qualifikation: -
usEccn: EAR99
Verlustleistung Pd: 300
Gate-Source-Schwellenspannung, max.: 4
euEccn: NLR
Verlustleistung: 300
Bauform - Transistor: TO-263AA
Anzahl der Pins: 3
Produktpalette: PolarP
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.17
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.17
SVHC: No SVHC (16-Jan-2020)
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA26P20P
Produktcode: 162385		Transistoren > Transistoren P-Kanal-Feld
Produkt ist nicht verfügbar
IXTA26P20PIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.17Ω
Drain current: -26A
Drain-source voltage: -200V
Gate charge: 56nC
Reverse recovery time: 240ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 300W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.32 EUR
12+ 5.96 EUR
13+ 5.65 EUR
Mindestbestellmenge: 9
IXTA26P20PLittelfuseTrans MOSFET P-CH 200V 26A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA26P20PIXYSMOSFET -26.0 Amps -200V 0.170 Rds
auf Bestellung 123 Stücke:
Lieferzeit 10-14 Tag (e)
1+11.07 EUR
10+ 9.94 EUR
50+ 8.84 EUR
100+ 8.06 EUR
IXTA26P20P TRLIxys CorporationIXTA26P20P TRL
Produkt ist nicht verfügbar
IXTA26P20P-TRLIXYSMOSFET IXTA26P20P TRL
auf Bestellung 1343 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.84 EUR
10+ 9.29 EUR
25+ 8.43 EUR
100+ 7.74 EUR
250+ 7.3 EUR
500+ 6.85 EUR
800+ 6.3 EUR
IXTA26P20P-TRLLittelfuse Inc.Description: MOSFET P-CH 200V 26A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
auf Bestellung 1224 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.91 EUR
10+ 9.35 EUR
100+ 7.79 EUR
Mindestbestellmenge: 2
IXTA26P20P-TRLLittelfuse Inc.Description: MOSFET P-CH 200V 26A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
Produkt ist nicht verfügbar
IXTA26P20P-TRLLittelfuseTrans MOSFET P-CH 200V 26A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA270N04T4IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO263; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO263
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA270N04T4IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO263; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO263
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
Produkt ist nicht verfügbar
IXTA270N04T4IXYSMOSFET 40V/270A TrenchT4 Power MOSFET
Produkt ist nicht verfügbar
IXTA270N04T4IXYSDescription: MOSFET N-CH 40V 270A
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
IXTA270N04T4-7IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO263-7; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO263-7
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
Produkt ist nicht verfügbar
IXTA270N04T4-7IXYSMOSFET 40V/270A TrenchT4 Power MOSFET
Produkt ist nicht verfügbar
IXTA270N04T4-7IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO263-7; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO263-7
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA27N20TIXYSMOSFET 27 Amps 200V 100 Rds
Produkt ist nicht verfügbar
IXTA27N20TIXYSDescription: MOSFET N-CH 20V 27A TO-263
Produkt ist nicht verfügbar
IXTA28P065TIXYSDescription: MOSFET P-CH 65V 28A TO-263
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
IXTA28P065TIXYSIXTA28P065T SMD P channel transistors
auf Bestellung 54 Stücke:
Lieferzeit 7-14 Tag (e)
27+2.66 EUR
35+ 2.04 EUR
38+ 1.93 EUR
Mindestbestellmenge: 27
IXTA28P065TIXYSMOSFET 28 Amps 65V 0.045 Rds
Produkt ist nicht verfügbar
IXTA2N100IXYSMOSFET 2 Amps 1000V 7 Rds
Produkt ist nicht verfügbar
IXTA2N100IXYSDescription: MOSFET N-CH 1000V 2A TO-263
Produkt ist nicht verfügbar
IXTA2N100PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.15 EUR
18+ 3.98 EUR
50+ 2.46 EUR
Mindestbestellmenge: 10
IXTA2N100PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.15 EUR
Mindestbestellmenge: 10
IXTA2N100PIXYSDescription: MOSFET N-CH 1000V 2A TO-263
Produkt ist nicht verfügbar
IXTA2N100PLittelfuseTrans MOSFET N-CH 1KV 2A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA2N100PIXYSMOSFET 2 Amps 1000V 7.5 Rds
Produkt ist nicht verfügbar
IXTA2N100P-TRLIXYSMOSFET IXTA2N100P TRL
Produkt ist nicht verfügbar
IXTA2N80IXYSDescription: MOSFET N-CH 800V 2A TO263
Packaging: Box
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 6.2Ohm @ 500mA, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Produkt ist nicht verfügbar
IXTA2N80PLittelfuseTrans MOSFET N-CH 800V 2A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA2N80PIXYSDescription: MOSFET N-CH 800V 2A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Produkt ist nicht verfügbar
IXTA2R4N120PIXYSMOSFET 2.4 Amps 1200V 7.5 Rds
auf Bestellung 1073 Stücke:
Lieferzeit 10-14 Tag (e)
1+11.25 EUR
10+ 10.65 EUR
50+ 8.98 EUR
100+ 8.04 EUR
250+ 7.71 EUR
500+ 7.09 EUR
1000+ 6.41 EUR
IXTA2R4N120PIXYSDescription: MOSFET N-CH 1200V 2.4A TO263
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.25 EUR
10+ 10.16 EUR
Mindestbestellmenge: 2
IXTA2R4N120PLittelfuseTrans MOSFET N-CH 1.2KV 2.4A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA2R4N120P-TRLLittelfuseTrans MOSFET N-CH 1.2KV 2.4A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA2R4N120P-TRLIXYSDescription: MOSFET N-CH 1200V 2.4A TO263
Produkt ist nicht verfügbar
IXTA300N04T2IXYSDescription: MOSFET N-CH 40V 300A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Produkt ist nicht verfügbar
IXTA300N04T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO263; 53ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Gate charge: 145nC
Kind of channel: enhanced
Reverse recovery time: 53ns
Drain-source voltage: 40V
Drain current: 300A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA300N04T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO263; 53ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Gate charge: 145nC
Kind of channel: enhanced
Reverse recovery time: 53ns
Drain-source voltage: 40V
Drain current: 300A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
IXTA300N04T2IXYSMOSFET 300 Amps 40V 0.025 Rds
Produkt ist nicht verfügbar
IXTA300N04T2LittelfuseTrans MOSFET N-CH 40V 300A Automotive 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA300N04T2LittelfuseTrans MOSFET N-CH 40V 300A 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA300N04T2-7IXYSMOSFET 300 Amps 40V
auf Bestellung 297 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.72 EUR
10+ 8.17 EUR
50+ 7.69 EUR
100+ 6.62 EUR
IXTA300N04T2-7IXYSDescription: MOSFET N-CH 40V 300A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
auf Bestellung 1100 Stücke:
Lieferzeit 10-14 Tag (e)
300+6.19 EUR
Mindestbestellmenge: 300
IXTA30N25L2IXYSMOSFET MSFT N-CH LINEAR L2
auf Bestellung 522 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.2 EUR
10+ 16.03 EUR
25+ 15.59 EUR
50+ 15.03 EUR
250+ 14.31 EUR
IXTA30N65X2IXYSMOSFET MOSFET DISCRETE
Produkt ist nicht verfügbar
IXTA32N20TIXYSMOSFET 32 Amps 200V 78 Rds
Produkt ist nicht verfügbar
IXTA32N20TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 32A; 200W; TO263; 110ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 32A
Power dissipation: 200W
Case: TO263
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 110ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA32N20TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 32A; 200W; TO263; 110ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 32A
Power dissipation: 200W
Case: TO263
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 110ns
Produkt ist nicht verfügbar
IXTA32N20TIXYSDescription: MOSFET N-CH 200V 32A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 16A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 25 V
Produkt ist nicht verfügbar
IXTA32P05TIXYSDescription: MOSFET P-CH 50V 32A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
auf Bestellung 128 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.4 EUR
50+ 3.49 EUR
100+ 2.99 EUR
Mindestbestellmenge: 4
IXTA32P05TLittelfuseTrans MOSFET P-CH 50V 32A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA32P05TIXYSMOSFET 32 Amps 50V 0.036 Rds
auf Bestellung 311 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.44 EUR
10+ 3.91 EUR
50+ 3.31 EUR
100+ 3.01 EUR
250+ 2.83 EUR
500+ 2.57 EUR
IXTA32P05TIXYSIXTA32P05T SMD P channel transistors
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)
27+2.66 EUR
36+ 2 EUR
38+ 1.89 EUR
Mindestbestellmenge: 27
IXTA32P05T-TRLLittelfuseTrans MOSFET P-CH 50V 32A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA32P05T-TRLIXYSMOSFET IXTA32P05T TRL
Produkt ist nicht verfügbar
IXTA32P05TTRLIXYS/LittelfuseP-канальний ПТ; Udss, В = 50; Id = 32 А; Ptot, Вт = 83; Тип монт. = вивідний; Ciss, пФ @ Uds, В = 1975 @ 25; Qg, нКл = 46 @ 10 В; Rds = 39 мОм @ 500 мA, 10 В; Tексп, °C = -55...+150; Ugs(th) = 4,5 В @ 250 мкА; TO-220
auf Bestellung 794 Stücke:
Lieferzeit 14-21 Tag (e)
9+0.82 EUR
10+ 0.7 EUR
100+ 0.62 EUR
Mindestbestellmenge: 9
IXTA32P20TLITTELFUSEDescription: LITTELFUSE - IXTA32P20T - Leistungs-MOSFET, p-Kanal, 200 V, 32 A, 0.13 ohm, TO-263AA, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 200
Dauer-Drainstrom Id: 32
Qualifikation: -
MSL: -
Verlustleistung Pd: 300
Gate-Source-Schwellenspannung, max.: 4
Verlustleistung: 300
Bauform - Transistor: TO-263AA
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.13
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.13
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA32P20TLittelfuseTrans MOSFET P-CH 200V 32A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA32P20TIXYSDescription: MOSFET P-CH 200V 32A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Produkt ist nicht verfügbar
IXTA32P20TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 190ns
Produkt ist nicht verfügbar
IXTA32P20TIXYSMOSFET TenchP Power MOSFET
auf Bestellung 1439 Stücke:
Lieferzeit 10-14 Tag (e)
1+14.48 EUR
10+ 12.41 EUR
50+ 10.01 EUR
100+ 9.42 EUR
250+ 9.35 EUR
IXTA32P20TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 190ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA32P20T-TRLLittelfuseTrans MOSFET P-CH 200V 32A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA32P20T-TRLIXYSDescription: MOSFET P-CH 200V 32A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Produkt ist nicht verfügbar
IXTA32P20T-TRLIXYSMOSFET IXTA32P20T TRL
Produkt ist nicht verfügbar
IXTA340N04T4IXYSMOSFET 40V/340A TrenchT4 Power MOSFET
Produkt ist nicht verfügbar
IXTA340N04T4IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
Produkt ist nicht verfügbar
IXTA340N04T4IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA340N04T4IXYSDescription: MOSFET N-CH 40V 340A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
auf Bestellung 188 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.33 EUR
10+ 7.83 EUR
100+ 6.33 EUR
Mindestbestellmenge: 2
IXTA340N04T4-7IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263-7; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
Produkt ist nicht verfügbar
IXTA340N04T4-7IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 480W; TO263-7; 43ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 256nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 43ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA340N04T4-7IXYSDescription: MOSFET N-CH 40V 340A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Produkt ist nicht verfügbar
IXTA340N04T4-7IXYSMOSFET 40V/340A TrenchT4 Power MOSFET
Produkt ist nicht verfügbar
IXTA340N04T4-7TRLLittelfuseIXTA340N04T4-7TRL
Produkt ist nicht verfügbar
IXTA340N04T4-TRLIXYSDescription: MOSFET N-CH TO263
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
IXTA34N65X2IXYSMOSFET MSFT N-CH ULTRA JNCT X2 3&44
Produkt ist nicht verfügbar
IXTA34N65X2LittelfuseTrans MOSFET N-CH 650V 34A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA34N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
Produkt ist nicht verfügbar
IXTA34N65X2IXYSDescription: MOSFET N-CH 650V 34A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Produkt ist nicht verfügbar
IXTA34N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA34N65X2-TRLIXYSDescription: MOSFET N-CH 650V 34A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Produkt ist nicht verfügbar
IXTA34N65X2-TRLIXYSMOSFET IXTA34N65X2 TRL
Produkt ist nicht verfügbar
IXTA34N65X2TRLLittelfuseTrans MOSFET N-CH 650V 34A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA36N20TIXYSMOSFET 36 Amps 200V 60 Rds
Produkt ist nicht verfügbar
IXTA36N20TIXYSDescription: MOSFET N-CH 200V 36A TO-263
Produkt ist nicht verfügbar
IXTA36N30PIXYSMOSFET MOSFET N-CH 300V 36A
auf Bestellung 3838 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.08 EUR
10+ 6.79 EUR
50+ 5.9 EUR
100+ 5.16 EUR
250+ 5.03 EUR
500+ 4.75 EUR
1000+ 4.21 EUR
IXTA36N30PLittelfuseTrans MOSFET N-CH 300V 36A 3-Pin(2+Tab) D2PAK
auf Bestellung 9100 Stücke:
Lieferzeit 14-21 Tag (e)
50+4.6 EUR
2250+ 4.07 EUR
4500+ 3.67 EUR
6750+ 3.34 EUR
Mindestbestellmenge: 50
IXTA36N30PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
auf Bestellung 254 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.8 EUR
17+ 4.25 EUR
20+ 3.63 EUR
21+ 3.45 EUR
Mindestbestellmenge: 15
IXTA36N30P
Produktcode: 52904		Verschiedene Bauteile > Verschiedene Bauteile 2
Produkt ist nicht verfügbar
IXTA36N30PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 254 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.8 EUR
17+ 4.25 EUR
20+ 3.63 EUR
21+ 3.45 EUR
Mindestbestellmenge: 15
IXTA36N30PIXYSDescription: MOSFET N-CH 300V 36A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 2060 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.03 EUR
50+ 6.36 EUR
100+ 5.46 EUR
500+ 4.85 EUR
1000+ 4.15 EUR
2000+ 3.91 EUR
Mindestbestellmenge: 3
IXTA36N30PLittelfuseTrans MOSFET N-CH 300V 36A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA36N30PLittelfuseTrans MOSFET N-CH 300V 36A 3-Pin(2+Tab) D2PAK
auf Bestellung 9100 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA36N30PLittelfuseTrans MOSFET N-CH 300V 36A 3-Pin(2+Tab) D2PAK
auf Bestellung 9100 Stücke:
Lieferzeit 14-21 Tag (e)
300+4.79 EUR
500+ 4.35 EUR
1000+ 3.48 EUR
2000+ 3.3 EUR
Mindestbestellmenge: 300
IXTA36N30P-PDPIXYSDescription: MOSFET N-CH TO263
Packaging: Bulk
Produkt ist nicht verfügbar
IXTA36N30P-TRLLittelfuseTrans MOSFET N-CH 300V 36A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA36N30P-TRLLittelfuseTrans MOSFET N-CH 300V 36A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA36N30P-TRLIXYSMOSFET IXTA36N30P TRL
Produkt ist nicht verfügbar
IXTA36N30P-TRLIXYSDescription: MOSFET N-CH 300V 36A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+4.8 EUR
Mindestbestellmenge: 800
IXTA36N30PTRLLittelfuseTrans MOSFET N-CH 300V 36A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA36N30TIXYSMOSFET 36 Amps 300V 110 Rds
Produkt ist nicht verfügbar
IXTA36N30TIXYSDescription: MOSFET N-CH 300V 36A TO263
Produkt ist nicht verfügbar
IXTA36P15PLittelfuseTrans MOSFET P-CH 150V 36A 3-Pin(2+Tab) D2PAK
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA36P15PIXYSDescription: MOSFET P-CH 150V 36A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
auf Bestellung 2235 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.75 EUR
50+ 8.59 EUR
100+ 7.69 EUR
500+ 6.78 EUR
1000+ 6.1 EUR
2000+ 5.72 EUR
Mindestbestellmenge: 2
IXTA36P15PIXYSMOSFET -36.0 Amps -150V 0.110 Rds
auf Bestellung 296 Stücke:
Lieferzeit 10-14 Tag (e)
IXTA36P15PIXYSIXTA36P15P SMD P channel transistors
auf Bestellung 75 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.19 EUR
13+ 5.62 EUR
14+ 5.32 EUR
Mindestbestellmenge: 10
IXTA36P15P TRLIXYSMOSFET -36.0 Amps -150V 0.110 Rds
auf Bestellung 745 Stücke:
Lieferzeit 10-14 Tag (e)
1+12.69 EUR
10+ 11.46 EUR
25+ 10.93 EUR
100+ 9.49 EUR
500+ 8.27 EUR
800+ 7.02 EUR
2400+ 6.78 EUR
IXTA36P15P-TRLLittelfuse Inc.Description: MOSFET P-CH 150V 36A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Produkt ist nicht verfügbar
IXTA36P15P-TRLLITTELFUSEDescription: LITTELFUSE - IXTA36P15P-TRL - MOSFET, P-CH, 150V, 36A, TO-263AA
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 150V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 36A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: TO-263AA
Anzahl der Pins: 3Pin(s)
Produktpalette: PolarP Series
productTraceability: No
Kanaltyp: P Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.11ohm
directShipCharge: 25
SVHC: No SVHC (17-Dec-2014)
auf Bestellung 660 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA36P15P-TRLLittelfuseTrans MOSFET P-CH 150V 36A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA36P15P-TRLLittelfuse Inc.Description: MOSFET P-CH 150V 36A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
auf Bestellung 724 Stücke:
Lieferzeit 10-14 Tag (e)
IXTA380N036T4-7IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 54ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA380N036T4-7IXYSDescription: MOSFET N-CH 36V 380A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 36 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
Produkt ist nicht verfügbar
IXTA380N036T4-7IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 54ns
Produkt ist nicht verfügbar
IXTA380N036T4-7IXYSMOSFET Disc MSFT NChTrenchGate-Gen4 TO-263D2
Produkt ist nicht verfügbar
IXTA380N036T4-7-TRIXYSDescription: MOSFET N-CH 36V 380A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 36 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
Produkt ist nicht verfügbar
IXTA380N036T4-7-TRIXYSMOSFET IXTA380N036T4-7 TRL
Produkt ist nicht verfügbar
IXTA38N15TIXYSDescription: MOSFET N-CH 150V 38A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Supplier Device Package: TO-263AA
Drain to Source Voltage (Vdss): 150 V
Produkt ist nicht verfügbar
IXTA3N100D2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 17ns
Produkt ist nicht verfügbar
IXTA3N100D2IXYSMOSFET N-CH MOSFETS (D2) 1000V 3A
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.35 EUR
10+ 8.38 EUR
50+ 5.21 EUR
IXTA3N100D2IXYSDescription: MOSFET N-CH 1000V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-263AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
Produkt ist nicht verfügbar
IXTA3N100D2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 17ns
Produkt ist nicht verfügbar
IXTA3N100D2LittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA3N100D2LittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA3N100D2 TRLIxys CorporationTrans MOSFET N-CH 1KV 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA3N100D2-TRLLittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA3N100D2-TRLIXYSMOSFET IXTA3N100D2 TRL
Produkt ist nicht verfügbar
IXTA3N100D2-TRLIXYSDescription: MOSFET N-CH 1000V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
Produkt ist nicht verfügbar
IXTA3N100D2HVLittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) TO-263HV
Produkt ist nicht verfügbar
IXTA3N100D2HVLITTELFUSEDescription: LITTELFUSE - IXTA3N100D2HV - Leistungs-MOSFET, n-Kanal, 1 kV, 3 A, 6 ohm, TO-263HV, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 1
rohsCompliant: YES
Dauer-Drainstrom Id: 3
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Verlustleistung Pd: 125
Gate-Source-Schwellenspannung, max.: 4.5
euEccn: NLR
Verlustleistung: 125
Bauform - Transistor: TO-263HV
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 6
Rds(on)-Prüfspannung: 0
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 6
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA3N100D2HVIXYSMOSFET MSFT N-CH DEPL MODE-D2
auf Bestellung 200 Stücke:
Lieferzeit 381-385 Tag (e)
1+10.4 EUR
10+ 8.75 EUR
50+ 8.25 EUR
100+ 7.23 EUR
IXTA3N100D2HVIXYSDescription: MOSFET N-CH 1000V 3A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
Produkt ist nicht verfügbar
IXTA3N100D2HVLittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) TO-263HV
Produkt ist nicht verfügbar
IXTA3N100D2HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 17ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA3N100D2HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 17ns
Produkt ist nicht verfügbar
IXTA3N100D2HV-TRLIXYSDescription: MOSFET N-CH 1000V 3A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
Produkt ist nicht verfügbar
IXTA3N100D2HV-TRLLittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA3N100D2HV-TRLLittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA3N100D2HV-TRLIXYSMOSFET IXTA3N100D2HV TRL
Produkt ist nicht verfügbar
IXTA3N100D2TRLLittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA3N100PIxys CorporationTrans MOSFET N-CH 1KV 3A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA3N100PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA3N100PIxys CorporationTrans MOSFET N-CH 1KV 3A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA3N100PIXYSMOSFET 3 Amps 1000V 4.8 Rds
Produkt ist nicht verfügbar
IXTA3N100PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
Produkt ist nicht verfügbar
IXTA3N100PIXYSDescription: MOSFET N-CH 1000V 3A TO-263
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
IXTA3N100PLittelfuseTrans MOSFET N-CH 1KV 3A 3-Pin(2+Tab) D2PAK
auf Bestellung 420 Stücke:
Lieferzeit 14-21 Tag (e)
21+7.67 EUR
23+ 6.6 EUR
25+ 6.29 EUR
50+ 5.66 EUR
100+ 4.68 EUR
Mindestbestellmenge: 21
IXTA3N100PLittelfuseTrans MOSFET N-CH 1KV 3A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA3N100P-TRLIXYSMOSFET IXTA3N100P TRL
Produkt ist nicht verfügbar
IXTA3N100P-TRLIXYSDescription: IXTA3N100P TRL
Produkt ist nicht verfügbar
IXTA3N110IXYSMOSFET 3 Amps 1100V 4 Rds
Produkt ist nicht verfügbar
IXTA3N110IXYSDescription: MOSFET N-CH 1100V 3A TO-263
Produkt ist nicht verfügbar
IXTA3N110-TRLIXYSDescription: IXTA3N110 TRL
Produkt ist nicht verfügbar
IXTA3N120IXYSDescription: MOSFET N-CH 1200V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Produkt ist nicht verfügbar
IXTA3N120LittelfuseTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK T/R/Tube
Produkt ist nicht verfügbar
IXTA3N120IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 700ns
Produkt ist nicht verfügbar
IXTA3N120LittelfuseTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK T/R/Tube
Produkt ist nicht verfügbar
IXTA3N120IXYSMOSFET 3 Amps 1200V 4.5 Rds
auf Bestellung 4656 Stücke:
Lieferzeit 559-563 Tag (e)
1+13.31 EUR
10+ 11.4 EUR
50+ 10.35 EUR
IXTA3N120LittelfuseTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK T/R/Tube
Produkt ist nicht verfügbar
IXTA3N120LittelfuseTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK T/R/Tube
Produkt ist nicht verfügbar
IXTA3N120
Produktcode: 190833		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IXTA3N120IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 700ns
Anzahl je Verpackung: 300 Stücke
Produkt ist nicht verfügbar
IXTA3N120IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXTA3N120 - Leistungs-MOSFET, n-Kanal, 1.2 kV, 3 A, 4.5 ohm, TO-263AA, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 3A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5V
euEccn: NLR
Verlustleistung: 200W
Anzahl der Pins: 3Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 4.5ohm
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA3N120-TRLIXYSDescription: MOSFET N-CH 1200V 3A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Produkt ist nicht verfügbar
IXTA3N120-TRLLittelfuseTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA3N120-TRLLITTELFUSEDescription: LITTELFUSE - IXTA3N120-TRL - MOSFET, N-CH, 1.2KV, 3A, TO-263AA
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Verlustleistung Pd: 200W
Gate-Source-Schwellenspannung, max.: 5V
euEccn: NLR
Verlustleistung: 200W
Bauform - Transistor: TO-263AA
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Wandlerpolarität: N Channel
Kanaltyp: N Channel
Betriebswiderstand, Rds(on): 4.5ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 4.5ohm
directShipCharge: 25
SVHC: To Be Advised
auf Bestellung 714 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA3N120-TRLIXYSDescription: MOSFET N-CH 1200V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Produkt ist nicht verfügbar
IXTA3N120-TRLLittelfuseHigh Voltage Power MOSFET
Produkt ist nicht verfügbar
IXTA3N120-TRLLittelfuseTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA3N120-TRLIXYSMOSFET IXTA3N120 TRL
auf Bestellung 1580 Stücke:
Lieferzeit 295-299 Tag (e)
1+13.57 EUR
10+ 11.56 EUR
25+ 11.4 EUR
100+ 9.61 EUR
250+ 9.5 EUR
500+ 8.4 EUR
IXTA3N120-TRRIXYSMOSFET IXTA3N120 TRR
Produkt ist nicht verfügbar
IXTA3N120-TRRIXYSDescription: MOSFET N-CH 1200V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Produkt ist nicht verfügbar
IXTA3N120HVIXYSMOSFET MSFT N-CH STD-HI VOLTAGE
Produkt ist nicht verfügbar
IXTA3N120HVLITTELFUSEDescription: LITTELFUSE - IXTA3N120HV - Leistungs-MOSFET, n-Kanal, 1.2 kV, 3 A, 4.5 ohm, TO-263, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 1.2
Dauer-Drainstrom Id: 3
hazardous: false
Qualifikation: -
MSL: -
usEccn: EAR99
Verlustleistung Pd: 200
Gate-Source-Schwellenspannung, max.: 5
euEccn: NLR
Verlustleistung: 200
Bauform - Transistor: TO-263
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 4.5
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 4.5
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA3N120HVLittelfuseTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) TO-263HV
Produkt ist nicht verfügbar
IXTA3N120HVIXYSDescription: MOSFET N-CH 1200V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.65 EUR
50+ 10.11 EUR
100+ 9.05 EUR
Mindestbestellmenge: 2
IXTA3N120HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263HV; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263HV
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 700ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA3N120HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263HV; 700ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263HV
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 700ns
Produkt ist nicht verfügbar
IXTA3N120HVLittelfuseTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) TO-263HV
Produkt ist nicht verfügbar
IXTA3N120HV-TRLIXYSDescription: MOSFET N-CH 1200V 3A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
IXTA3N120HV-TRLLittelfuseTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA3N120HV-TRLIXYSMOSFET MSFT N-CH STD-HI VOLTAGE
auf Bestellung 800 Stücke:
Lieferzeit 618-622 Tag (e)
1+12.88 EUR
10+ 11.04 EUR
25+ 10.01 EUR
100+ 9.2 EUR
250+ 8.66 EUR
500+ 8.11 EUR
800+ 7.48 EUR
IXTA3N120HV-TRLLittelfuseTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA3N120HVTRLIxys CorporationTrans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA3N150HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Drain-source voltage: 1.5kV
Drain current: 3A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 38.6nC
Kind of channel: enhanced
Mounting: SMD
Case: TO263
Reverse recovery time: 900ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 72 Stücke:
Lieferzeit 7-14 Tag (e)
6+13.99 EUR
8+ 9.48 EUR
Mindestbestellmenge: 6
IXTA3N150HVIXYSMOSFET MSFT N-CH STD-HI VOLTAGE
auf Bestellung 336 Stücke:
Lieferzeit 459-463 Tag (e)
1+17.6 EUR
10+ 17.58 EUR
IXTA3N150HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Drain-source voltage: 1.5kV
Drain current: 3A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 38.6nC
Kind of channel: enhanced
Mounting: SMD
Case: TO263
Reverse recovery time: 900ns
auf Bestellung 72 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.99 EUR
8+ 9.48 EUR
Mindestbestellmenge: 6
IXTA3N150HVLittelfuseTrans MOSFET N-CH 1.5KV 3A 3-Pin(2+Tab) TO-263HV
Produkt ist nicht verfügbar
IXTA3N150HVIXYSDescription: MOSFET N-CH 1500V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
Produkt ist nicht verfügbar
IXTA3N150HV-TRLLittelfuseTrans MOSFET N-CH 1.5KV 3A 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA3N150HV-TRLIXYSDescription: MOSFET N-CH 1500V 3A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
Produkt ist nicht verfügbar
IXTA3N150HV-TRLLittelfuseTrans MOSFET N-CH 1.5KV 3A 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA3N150HV-TRLLittelfuseTrans MOSFET N-CH 1.5KV 3A 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA3N150HV-TRLIXYSMOSFET IXTA3N150HV TRL
Produkt ist nicht verfügbar
IXTA3N50D2IXYSMOSFET N-CH MOSFETS (D2) 500V 3A
auf Bestellung 456 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.13 EUR
10+ 6.85 EUR
50+ 5.93 EUR
100+ 5.33 EUR
250+ 5.1 EUR
IXTA3N50D2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO263; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 1.07µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 24ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA3N50D2IXYSDescription: MOSFET N-CH 500V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
auf Bestellung 135 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.01 EUR
10+ 6.72 EUR
100+ 5.44 EUR
Mindestbestellmenge: 3
IXTA3N50D2LittelfuseTrans MOSFET N-CH 500V 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA3N50D2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO263; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 1.07µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 24ns
Produkt ist nicht verfügbar
IXTA3N50D2-TRLIXYSMOSFET IXTA3N50D2 TRL
Produkt ist nicht verfügbar
IXTA3N50D2-TRLIXYSDescription: MOSFET N-CH 500V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
Produkt ist nicht verfügbar
IXTA3N50PIXYSDescription: MOSFET N-CH 500V 3.6A D2PAK
Produkt ist nicht verfügbar
IXTA3N50PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.15 EUR
Mindestbestellmenge: 10
IXTA3N50P
Produktcode: 131345		Verschiedene Bauteile > Other components 3
Produkt ist nicht verfügbar
IXTA3N50PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 70W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 9.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.15 EUR
Mindestbestellmenge: 10
IXTA3N50PIXYSMOSFET 3.6 Amps 500 V 2 Ohm Rds
auf Bestellung 107 Stücke:
Lieferzeit 10-14 Tag (e)
IXTA3N60PIXYSMOSFET 3 Amps 600V 2.9 Ohms Rds
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
IXTA3N60PIXYSDescription: MOSFET N-CH 600V 3A TO263
Produkt ist nicht verfügbar
IXTA42N15TIXYSMOSFET MSFT N-CH TRENCH GATE -GEN1
auf Bestellung 184 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.23 EUR
10+ 4.59 EUR
50+ 3.89 EUR
100+ 3.54 EUR
250+ 3.34 EUR
500+ 3.15 EUR
1000+ 2.87 EUR
IXTA42N25PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 42A; 300W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 70nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 200ns
Drain-source voltage: 250V
Drain current: 42A
On-state resistance: 84mΩ
Produkt ist nicht verfügbar
IXTA42N25PIXYSDescription: MOSFET N-CH 250V 42A TO-263
Produkt ist nicht verfügbar
IXTA42N25PIXYSMOSFET 42 Amps 250V 0.084 Rds
Produkt ist nicht verfügbar
IXTA42N25PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 42A; 300W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 70nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 200ns
Drain-source voltage: 250V
Drain current: 42A
On-state resistance: 84mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA42N25P-TRLLittelfuseTrans MOSFET N-CH 250V 42A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA42N28PIXYS09+
auf Bestellung 322 Stücke:
Lieferzeit 21-28 Tag (e)
IXTA44N15TIXYSDescription: MOSFET N-CH 150V 44A TO-263
Produkt ist nicht verfügbar
IXTA44N25TIXYSMOSFET 44 Amps 250V 72 Rds
Produkt ist nicht verfügbar
IXTA44N25TIXYSDescription: MOSFET N-CH 250V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Supplier Device Package: TO-263AA
Part Status: Active
Drain to Source Voltage (Vdss): 250 V
Produkt ist nicht verfügbar
IXTA44N30TIXYSDescription: MOSFET N-CH 300V 44A TO263
Produkt ist nicht verfügbar
IXTA44N30TIXYSMOSFET 44 Amps 300V 85 Rds
Produkt ist nicht verfügbar
IXTA44P15TLittelfuseTrans MOSFET P-CH 150V 44A 3-Pin(2+Tab) D2PAK
auf Bestellung 121 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA44P15TIXYSIXTA44P15T SMD P channel transistors
auf Bestellung 82 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.81 EUR
14+ 5.18 EUR
15+ 4.89 EUR
Mindestbestellmenge: 11
IXTA44P15TIXYSMOSFET -44 Amps -150V 0.065 Rds
Produkt ist nicht verfügbar
IXTA44P15TLittelfuseTrans MOSFET P-CH 150V 44A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA44P15TLittelfuse Inc.Description: MOSFET P-CH 150V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
auf Bestellung 2969 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.31 EUR
50+ 8.24 EUR
100+ 7.37 EUR
500+ 6.51 EUR
1000+ 5.85 EUR
2000+ 5.49 EUR
Mindestbestellmenge: 2
IXTA44P15TLittelfuseTrans MOSFET P-CH 150V 44A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA44P15TLittelfuseTrans MOSFET P-CH 150V 44A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA44P15T-TRLLittelfuseP-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
IXTA44P15T-TRLLITTELFUSEDescription: LITTELFUSE - IXTA44P15T-TRL - Leistungs-MOSFET, p-Kanal, 150 V, 44 A, 0.065 ohm, TO-263AA, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 150V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 44A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 298W
Bauform - Transistor: TO-263AA
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchP Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.065ohm
SVHC: No SVHC (10-Jun-2022)
auf Bestellung 804 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA44P15T-TRLLittelfuse Inc.Description: MOSFET P-CH 150V 44A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
auf Bestellung 22790 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.31 EUR
10+ 8.85 EUR
100+ 7.37 EUR
Mindestbestellmenge: 2
IXTA44P15T-TRLLITTELFUSEDescription: LITTELFUSE - IXTA44P15T-TRL - Leistungs-MOSFET, p-Kanal, 150 V, 44 A, 0.065 ohm, TO-263AA, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 150V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 44A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 298W
Bauform - Transistor: TO-263AA
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchP Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.065ohm
SVHC: No SVHC (10-Jun-2022)
auf Bestellung 804 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA44P15T-TRLIXYSMOSFET MOSFET 150 V
auf Bestellung 3100 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.24 EUR
10+ 9.2 EUR
25+ 8.64 EUR
100+ 7.62 EUR
250+ 7.46 EUR
500+ 6.56 EUR
800+ 5.97 EUR
IXTA44P15T-TRLLittelfuseTrans MOSFET P-CH 150V 44A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA44P15T-TRLLittelfuse Inc.Description: MOSFET P-CH 150V 44A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
auf Bestellung 22400 Stücke:
Lieferzeit 10-14 Tag (e)
800+6.51 EUR
1600+ 5.85 EUR
2400+ 5.49 EUR
Mindestbestellmenge: 800
IXTA44P15T-TRL.LITTELFUSEDescription: LITTELFUSE - IXTA44P15T-TRL. - MOSFET, P-CH, 150V, 44A, TO-263AA
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 150V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 44A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Verlustleistung Pd: 298W
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 298W
Bauform - Transistor: TO-263AA
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchP Series
productTraceability: No
Wandlerpolarität: P Channel
Kanaltyp: P Channel
Betriebswiderstand, Rds(on): 0.065ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.065ohm
directShipCharge: 25
SVHC: To Be Advised
auf Bestellung 302 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA44P15TTRLIXYSDescription: MOSFET P-CH 150V 44A TO-263
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
IXTA460P2IXYSDescription: MOSFET N-CH 500V 24A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
auf Bestellung 986 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.07 EUR
10+ 9.04 EUR
100+ 7.4 EUR
500+ 6.3 EUR
Mindestbestellmenge: 2
IXTA460P2IXYSMOSFET PolarP2 Power MOSFET
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.01 EUR
10+ 7.57 EUR
50+ 7.32 EUR
100+ 6.04 EUR
250+ 5.9 EUR
500+ 5.39 EUR
1000+ 4.65 EUR
IXTA460P2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO263; 400ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Drain current: 24A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: standard power mosfet
Gate charge: 48nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA460P2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO263; 400ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Drain current: 24A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: standard power mosfet
Gate charge: 48nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
Produkt ist nicht verfügbar
IXTA48N20TIXYSMOSFET 48 Amps 200V 50 Rds
Produkt ist nicht verfügbar
IXTA48N20TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO263; 130ns
Case: TO263
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 250W
Reverse recovery time: 130ns
Type of transistor: N-MOSFET
Drain-source voltage: 200V
Drain current: 48A
On-state resistance: 50mΩ
Gate charge: 60nC
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA48N20TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO263; 130ns
Case: TO263
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 250W
Reverse recovery time: 130ns
Type of transistor: N-MOSFET
Drain-source voltage: 200V
Drain current: 48A
On-state resistance: 50mΩ
Gate charge: 60nC
Features of semiconductor devices: thrench gate power mosfet
Produkt ist nicht verfügbar
IXTA48N20TIXYSDescription: MOSFET N-CH 200V 48A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
auf Bestellung 1050 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.97 EUR
10+ 5.86 EUR
100+ 4.74 EUR
Mindestbestellmenge: 3
IXTA48P05TIXYSDescription: MOSFET P-CH 50V 48A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
auf Bestellung 3439 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.11 EUR
50+ 5.65 EUR
100+ 4.84 EUR
500+ 4.3 EUR
1000+ 3.68 EUR
2000+ 3.47 EUR
Mindestbestellmenge: 3
IXTA48P05TLittelfuseTrans MOSFET P-CH 50V 48A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA48P05TIXYSMOSFET TenchP Power MOSFET
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.16 EUR
10+ 6.04 EUR
50+ 5.68 EUR
100+ 4.79 EUR
250+ 4.63 EUR
IXTA48P05TIXYSIXTA48P05T SMD P channel transistors
Produkt ist nicht verfügbar
IXTA48P05T-TRLIXYSDescription: MOSFET P-CH 50V 48A TO263
Produkt ist nicht verfügbar
IXTA4N150HVLittelfuseTrans MOSFET N-CH 1.5KV 4A 3-Pin(2+Tab) TO-263HV
Produkt ist nicht verfügbar
IXTA4N150HVIXYSMOSFET MSFT N-CH STD-HI VOLTAGE
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
1+45.55 EUR
IXTA4N150HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO263; 900ns
Drain-source voltage: 1.5kV
Drain current: 4A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 44.5nC
Kind of channel: enhanced
Mounting: SMD
Case: TO263
Reverse recovery time: 900ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA4N150HVIXYSDescription: MOSFET N-CH 1500V 4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1576 pF @ 25 V
Produkt ist nicht verfügbar
IXTA4N150HVIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO263; 900ns
Drain-source voltage: 1.5kV
Drain current: 4A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 44.5nC
Kind of channel: enhanced
Mounting: SMD
Case: TO263
Reverse recovery time: 900ns
Produkt ist nicht verfügbar
IXTA4N150HVLittelfuseTrans MOSFET N-CH 1.5KV 4A 3-Pin(2+Tab) TO-263HV
Produkt ist nicht verfügbar
IXTA4N150HV-TRLIXYSDescription: MOSFET N-CH 1500V 4A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 2A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1576 pF @ 25 V
Produkt ist nicht verfügbar
IXTA4N150HV-TRLLittelfuseTrans MOSFET N-CH 1.5KV 4A 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA4N150HV-TRLLittelfuseTrans MOSFET N-CH 1.5KV 4A 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA4N150HV-TRLIXYSMOSFET IXTA4N150HV TRL
Produkt ist nicht verfügbar
IXTA4N150HVTRLLittelfuseTrans MOSFET N-CH 1.5KV 4A 3-Pin(2+Tab) TO-263HV T/R
Produkt ist nicht verfügbar
IXTA4N60PIXYSMOSFET 4.0 Amps 600 V 1.9 Ohm Rds
Produkt ist nicht verfügbar
IXTA4N60PIXYSDescription: MOSFET N-CH 600V 4A TO263
Produkt ist nicht verfügbar
IXTA4N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO263
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 80W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 160ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
12+5.96 EUR
24+ 2.97 EUR
50+ 1.82 EUR
Mindestbestellmenge: 12
IXTA4N65X2Littelfuse Inc.Description: MOSFET N-CH 650V 4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
Produkt ist nicht verfügbar
IXTA4N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 4A; 80W; TO263
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 80W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 160ns
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
12+5.96 EUR
Mindestbestellmenge: 12
IXTA4N65X2LittelfuseTrans MOSFET N-CH 650V 4A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA4N65X2IXYSMOSFET MSFT N-CH ULTRA JNCT X2 3&44
auf Bestellung 270 Stücke:
Lieferzeit 234-238 Tag (e)
1+4.79 EUR
10+ 3.85 EUR
100+ 3.17 EUR
IXTA4N65X2TRLLittelfuseIXTA4N65X2TRL
Produkt ist nicht verfügbar
IXTA4N70X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.42 EUR
24+ 3.09 EUR
29+ 2.47 EUR
31+ 2.33 EUR
Mindestbestellmenge: 21
IXTA4N70X2IXYSMOSFET MSFT N-CH ULTRA JNCT X2 3&44
Produkt ist nicht verfügbar
IXTA4N70X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; Idm: 8A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 11.8nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.42 EUR
24+ 3.09 EUR
29+ 2.47 EUR
31+ 2.33 EUR
Mindestbestellmenge: 21
IXTA4N70X2IXYSDescription: MOSFET N-CH 700V 4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
Produkt ist nicht verfügbar
IXTA4N80PIXYSMOSFET 3.5 Amps 800V 3 Rds
Produkt ist nicht verfügbar
IXTA4N80PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 560ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA4N80PIXYSDescription: MOSFET N-CH 800V 3.6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
IXTA4N80PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 560ns
Produkt ist nicht verfügbar
IXTA4N80PLittelfuseTrans MOSFET N-CH 800V 3.6A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA4N80P-TRLIXYSDescription: MOSFET N-CH 800V 3.6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.8A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
IXTA4N80P-TRLIXYSMOSFET IXTA4N80P TRL
Produkt ist nicht verfügbar
IXTA50N20PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
IXTA50N20PIXYSMOSFET 50 Amps 200V 0.06 Rds
auf Bestellung 148 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.08 EUR
10+ 6.79 EUR
50+ 6.56 EUR
100+ 5.49 EUR
250+ 5.32 EUR
500+ 4.95 EUR
IXTA50N20PLittelfuseTrans MOSFET N-CH 200V 50A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA50N20PIXYSDescription: MOSFET N-CH 200V 50A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
auf Bestellung 1550 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.03 EUR
10+ 6.74 EUR
100+ 5.46 EUR
500+ 4.85 EUR
1000+ 4.15 EUR
Mindestbestellmenge: 3
IXTA50N20PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA50N20P-TRLLittelfuseTrans MOSFET N-CH 200V 50A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA50N20P-TRLIXYSDescription: MOSFET N-CH 200V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
Produkt ist nicht verfügbar
IXTA50N20P-TRLLittelfuseTrans MOSFET N-CH 200V 50A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA50N20P-TRLIXYSMOSFET IXTA50N20P TRL
Produkt ist nicht verfügbar
IXTA50N25TLittelfuseTrans MOSFET N-CH 250V 50A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA50N25TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 166ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA50N25TIXYSMOSFET 50 Amps 250V 50 Rds
auf Bestellung 258 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.94 EUR
10+ 7.52 EUR
50+ 7.08 EUR
100+ 6.18 EUR
IXTA50N25TIXYSDescription: MOSFET N-CH 250V 50A TO263
Produkt ist nicht verfügbar
IXTA50N25TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO263; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO263
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 166ns
Produkt ist nicht verfügbar
IXTA50N25T-TRLIXYSMOSFET IXTA50N25T TRL
Produkt ist nicht verfügbar
IXTA50N25T-TRLIXYSDescription: MOSFET N-CH 250V 50A TO263
Produkt ist nicht verfügbar
IXTA52P10PIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO263
Kind of package: tube
Gate charge: 60nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
Reverse recovery time: 120ns
Drain-source voltage: -100V
Drain current: -52A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 308 Stücke:
Lieferzeit 7-14 Tag (e)
9+7.99 EUR
10+ 7.19 EUR
13+ 5.53 EUR
14+ 5.23 EUR
Mindestbestellmenge: 9
IXTA52P10PLittelfuse Inc.Description: MOSFET P-CH 100V 52A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
auf Bestellung 1799 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.91 EUR
50+ 8.71 EUR
100+ 7.79 EUR
500+ 6.88 EUR
1000+ 6.19 EUR
Mindestbestellmenge: 2
IXTA52P10PIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO263
Kind of package: tube
Gate charge: 60nC
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
Reverse recovery time: 120ns
Drain-source voltage: -100V
Drain current: -52A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
auf Bestellung 308 Stücke:
Lieferzeit 14-21 Tag (e)
9+7.99 EUR
10+ 7.19 EUR
13+ 5.53 EUR
14+ 5.23 EUR
Mindestbestellmenge: 9
IXTA52P10PLITTELFUSEDescription: LITTELFUSE - IXTA52P10P - MOSFET, P-CH, 100V, 52A, TO-263AA
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 52A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - Unlimited
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: TO-263AA
Anzahl der Pins: 3Pin(s)
Produktpalette: PolarP Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: P Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.05ohm
directShipCharge: 25
SVHC: No SVHC (17-Dec-2014)
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA52P10PLittelfuseTrans MOSFET P-CH 100V 52A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA52P10PIXYSMOSFET -52.0 Amps -100V 0.050 Rds
auf Bestellung 245 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.84 EUR
10+ 9.7 EUR
50+ 9.31 EUR
100+ 8.03 EUR
250+ 7.64 EUR
500+ 7.06 EUR
1000+ 6.93 EUR
IXTA52P10PLittelfuseTrans MOSFET P-CH 100V 52A 3-Pin(2+Tab) D2PAK
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA52P10P-TRLLittelfuseTrans MOSFET P-CH 100V 52A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA52P10P-TRLLittelfuse Inc.Description: MOSFET P-CH 100V 52A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 26A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
auf Bestellung 2161 Stücke:
Lieferzeit 10-14 Tag (e)
IXTA52P10P-TRLIXYSMOSFET IXTA52P10P TRL
auf Bestellung 800 Stücke:
Lieferzeit 311-315 Tag (e)
1+10.84 EUR
10+ 9.28 EUR
25+ 8.41 EUR
100+ 7.73 EUR
250+ 7.29 EUR
500+ 6.83 EUR
800+ 6.3 EUR
IXTA52P10P-TRLLittelfuse Inc.Description: MOSFET P-CH 100V 52A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 26A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
IXTA54N30TIXYSMOSFET 54 Amps 300V 72 Rds
Produkt ist nicht verfügbar
IXTA54N30TIXYSDescription: MOSFET N-CH 300V 54A TO-263
Produkt ist nicht verfügbar
IXTA56N15TIXYSDescription: MOSFET N-CH 150V 56A TO263
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
300+4.67 EUR
Mindestbestellmenge: 300
IXTA56N15TLittelfuseTrans MOSFET N-CH 150V 56A 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA5N50PIXYSDescription: MOSFET N-CH 500V 4.8A TO263
Produkt ist nicht verfügbar
IXTA5N50PIXYSMOSFET 4.8 Amps 500V 1.4 Ohms Rds
Produkt ist nicht verfügbar
IXTA5N60PIXYSMOSFET 5.0 Amps 600 V 1.6 Ohm Rds
Produkt ist nicht verfügbar
IXTA5N60PLittelfuseTrans MOSFET N-CH 600V 5A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA5N60PIXYSDescription: MOSFET N-CH 600V 5A TO263
Produkt ist nicht verfügbar
IXTA60N10T
Produktcode: 148376		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IXTA60N10TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Kind of channel: enhanced
Reverse recovery time: 59ns
Drain-source voltage: 100V
Drain current: 60A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Produkt ist nicht verfügbar
IXTA60N10TIXYSDescription: MOSFET N-CH 100V 60A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.47 EUR
Mindestbestellmenge: 4
IXTA60N10TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO263; 59ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Kind of channel: enhanced
Reverse recovery time: 59ns
Drain-source voltage: 100V
Drain current: 60A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 176W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA60N10TIXYSMOSFET 60 Amps 100V 18.0 Rds
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.51 EUR
10+ 3.75 EUR
100+ 2.92 EUR
250+ 2.6 EUR
500+ 2.39 EUR
1000+ 2.27 EUR
IXTA60N10TLittelfuseTrans MOSFET N-CH 100V 60A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA60N10T-TRLIXYSDescription: MOSFET N-CH 100V 60A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
auf Bestellung 6399 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.47 EUR
10+ 3.71 EUR
100+ 2.95 EUR
Mindestbestellmenge: 4
IXTA60N10T-TRLIXYSMOSFET IXTA60N10T TRL
auf Bestellung 780 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.51 EUR
10+ 3.75 EUR
100+ 2.97 EUR
250+ 2.87 EUR
500+ 2.5 EUR
800+ 2.16 EUR
IXTA60N10T-TRLLittelfuseTrans MOSFET N-CH 100V 60A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA60N10T-TRLIXYSDescription: MOSFET N-CH 100V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
auf Bestellung 5600 Stücke:
Lieferzeit 10-14 Tag (e)
800+2.5 EUR
1600+ 2.12 EUR
2400+ 2.02 EUR
5600+ 1.94 EUR
Mindestbestellmenge: 800
IXTA60N10TTRLLittelfuseTrans MOSFET N-CH 100V 60A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA60N20TIXYSMOSFET 60 Amps 200V
Produkt ist nicht verfügbar
IXTA60N20TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO263; 118ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Kind of channel: enhanced
Reverse recovery time: 118ns
Drain-source voltage: 200V
Drain current: 60A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.93 EUR
14+ 5.11 EUR
Mindestbestellmenge: 13
IXTA60N20T
Produktcode: 108659		IXYSTransistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IXTA60N20TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO263; 118ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Kind of channel: enhanced
Reverse recovery time: 118ns
Drain-source voltage: 200V
Drain current: 60A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.93 EUR
14+ 5.11 EUR
Mindestbestellmenge: 13
IXTA60N20TLittelfuseTrans MOSFET N-CH 200V 60A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA60N20TIXYSDescription: MOSFET N-CH 200V 60A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
Produkt ist nicht verfügbar
IXTA60N20T-TRLIXYSDescription: MOSFET N-CH 200V 60A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
Produkt ist nicht verfügbar
IXTA60N20T-TRLIXYSMOSFET IXTA60N20T TRL
Produkt ist nicht verfügbar
IXTA60N20X4IXYSDescription: MOSFET ULTRA X4 200V 60A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
auf Bestellung 1667 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.02 EUR
50+ 14.39 EUR
100+ 12.87 EUR
500+ 11.36 EUR
1000+ 10.22 EUR
IXTA60N20X4IXYSMOSFET 200V, 60A current capacity, Ultra junction X4, TO-263 package, MOSFET
auf Bestellung 947 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.15 EUR
10+ 16 EUR
50+ 13.59 EUR
100+ 12.95 EUR
250+ 12.2 EUR
500+ 11.42 EUR
1000+ 10.28 EUR
IXTA62N15PLITTELFUSEDescription: LITTELFUSE - IXTA62N15P - MOSFET, N-CH, 150V, 62A, TO-263
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 150
Dauer-Drainstrom Id: 62
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 350
Bauform - Transistor: TO-263 (D2PAK)
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3
Produktpalette: PolarHT Series
Wandlerpolarität: N Channel
Betriebswiderstand, Rds(on): 0.033
Betriebstemperatur, max.: 175
Schwellenspannung Vgs: 5.5
SVHC: To Be Advised
Produkt ist nicht verfügbar
IXTA62N15PLittelfuseTrans MOSFET N-CH 150V 62A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA62N15PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
IXTA62N15PLittelfuseTrans MOSFET N-CH 150V 62A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA62N15PLittelfuseTrans MOSFET N-CH 150V 62A 3-Pin(2+Tab) D2PAK
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA62N15PIXYSDescription: MOSFET N-CH 150V 62A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 31A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 272 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.03 EUR
50+ 6.36 EUR
100+ 5.46 EUR
Mindestbestellmenge: 3
IXTA62N15PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 62A; 350W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 62A
Power dissipation: 350W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA62N15PIXYSMOSFET 62 Amps 150V 0.04 Rds
auf Bestellung 323 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.08 EUR
10+ 7.6 EUR
50+ 5.76 EUR
100+ 5.14 EUR
IXTA62N15P-TRLIXYSDescription: MOSFET N-CH 150V 62A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 31A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+4.85 EUR
Mindestbestellmenge: 800
IXTA62N15P-TRLIXYSMOSFET IXTA62N15P TRL
Produkt ist nicht verfügbar
IXTA62N15P-TRLLittelfuseTrans MOSFET N-CH 150V 62A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA62N25TIXYSMOSFET 62 Amps 250V 50 Rds
Produkt ist nicht verfügbar
IXTA62N25TIXYSDescription: MOSFET N-CH 250V 62A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Supplier Device Package: TO-263AA
Drain to Source Voltage (Vdss): 250 V
Produkt ist nicht verfügbar
IXTA64N10L2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO263; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 357W
Case: TO263
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 180ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA64N10L2LittelfuseTrans MOSFET N-CH 100V 64A 3-Pin(2+Tab) TO-263
Produkt ist nicht verfügbar
IXTA64N10L2IXYSDescription: MOSFET N-CH 100V 64A TO263AA
Produkt ist nicht verfügbar
IXTA64N10L2IXYSMOSFET MSFT N-CH LINEAR L2
auf Bestellung 963 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.58 EUR
10+ 19.45 EUR
25+ 18.62 EUR
50+ 17.95 EUR
100+ 16.81 EUR
250+ 16.49 EUR
500+ 15.45 EUR
IXTA64N10L2LITTELFUSEDescription: LITTELFUSE - IXTA64N10L2 - MOSFET, N-CH, 100V, 64A, TO-263
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 100
Dauer-Drainstrom Id: 64
Qualifikation: -
Verlustleistung Pd: 357
Gate-Source-Schwellenspannung, max.: 4.5
Verlustleistung: 357
Bauform - Transistor: TO-263 (D2PAK)
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3
Produktpalette: LinearL2 Series
Wandlerpolarität: N Channel
Kanaltyp: N Channel
Betriebswiderstand, Rds(on): 0.032
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.032
SVHC: To Be Advised
Produkt ist nicht verfügbar
IXTA64N10L2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO263; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 357W
Case: TO263
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 180ns
Produkt ist nicht verfügbar
IXTA64N10L2-TRLIXYSDescription: MOSFET N-CH 100V 64A TO263
Produkt ist nicht verfügbar
IXTA64N10L2-TRLIXYSMOSFET IXTA64N10L2 TRL
Produkt ist nicht verfügbar
IXTA6N100D2LittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA6N100D2LittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA6N100D2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO263; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 41ns
Produkt ist nicht verfügbar
IXTA6N100D2IXYSDescription: MOSFET N-CH 1000V 6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-263AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
auf Bestellung 159 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.01 EUR
10+ 12.88 EUR
100+ 10.73 EUR
Mindestbestellmenge: 2
IXTA6N100D2IXYSMOSFET N-CH MOSFETS (D2) 1000V 6A
auf Bestellung 3300 Stücke:
Lieferzeit 10-14 Tag (e)
1+15.31 EUR
10+ 13.13 EUR
50+ 11.93 EUR
100+ 10.93 EUR
250+ 10.72 EUR
500+ 9.86 EUR
1000+ 8.91 EUR
IXTA6N100D2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; 300W; TO263; 41ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 41ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA6N100D2-TRLIXYSDescription: MOSFET N-CH 1000V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Produkt ist nicht verfügbar
IXTA6N100D2-TRLIXYSMOSFET IXTA6N100D2 TRL
Produkt ist nicht verfügbar
IXTA6N100D2-TRLLittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA6N100D2HVLittelfuseHigh Voltage MOSFET
Produkt ist nicht verfügbar
IXTA6N100D2HVIXYSDescription: MOSFET N-CH 1000V 6A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 10 V
Produkt ist nicht verfügbar
IXTA6N100D2HVIXYSMOSFET MSFT N-CH DEPL MODE-D2
auf Bestellung 295 Stücke:
Lieferzeit 562-566 Tag (e)
1+24.55 EUR
10+ 18.92 EUR
500+ 18.55 EUR
1000+ 18.13 EUR
IXTA6N100D2TRLLittelfuseTrans MOSFET N-CH 1KV 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA6N50D2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO263; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 64ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.75 EUR
9+ 7.99 EUR
Mindestbestellmenge: 7
IXTA6N50D2LittelfuseTrans MOSFET N-CH 500V 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA6N50D2LITTELFUSEDescription: LITTELFUSE - IXTA6N50D2 - MOSFET, N-CH, 500V, 6A, TO-263AA
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 500V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: -
euEccn: NLR
Verlustleistung: 300W
Bauform - Transistor: TO-263AA
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: Yes-Date/Lot Code
Kanaltyp: N Channel
Rds(on)-Prüfspannung: 0V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.55ohm
directShipCharge: 25
SVHC: No SVHC (17-Dec-2014)
auf Bestellung 1217 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA6N50D2LittelfuseTrans MOSFET N-CH 500V 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA6N50D2Littelfuse Inc.Description: MOSFET N-CH 500V 6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
auf Bestellung 1025 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.42 EUR
50+ 12.32 EUR
100+ 11.02 EUR
500+ 9.72 EUR
1000+ 8.75 EUR
Mindestbestellmenge: 2
IXTA6N50D2IXYSMOSFET N-CH MOSFETS (D2) 500V 6A
auf Bestellung 629 Stücke:
Lieferzeit 10-14 Tag (e)
1+15.63 EUR
10+ 15.31 EUR
50+ 12.25 EUR
IXTA6N50D2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6A; 300W; TO263; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 64ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)
7+11.75 EUR
9+ 7.99 EUR
Mindestbestellmenge: 7
IXTA6N50D2LittelfuseTrans MOSFET N-CH 500V 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA6N50D2 TRLIxys CorporationTrans MOSFET N-CH 500V 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
800+4.55 EUR
Mindestbestellmenge: 800
IXTA6N50D2(IXYS Corporation MOSFET N-CH 500V 6A D2PAK )
Produktcode: 84036		Verschiedene Bauteile > Other components 3
Produkt ist nicht verfügbar
IXTA6N50D2-TRLLittelfuse Inc.Description: MOSFET N-CH 500V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+9.72 EUR
Mindestbestellmenge: 800
IXTA6N50D2-TRLIXYSMOSFET MSFT N-CH DEPL MODE-D2
auf Bestellung 800 Stücke:
Lieferzeit 445-449 Tag (e)
1+15.31 EUR
10+ 13.15 EUR
25+ 12.46 EUR
100+ 10.95 EUR
250+ 10.6 EUR
500+ 9.68 EUR
800+ 9.26 EUR
IXTA6N50D2-TRLLittelfuseTrans MOSFET N-CH 500V 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA6N50D2-TRLLittelfuse Inc.Description: MOSFET N-CH 500V 6A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
auf Bestellung 1144 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.42 EUR
10+ 13.22 EUR
100+ 11.02 EUR
Mindestbestellmenge: 2
IXTA6N50PIXYSDescription: MOSFET N-CH 500V 6A D2-PAK
Produkt ist nicht verfügbar
IXTA6N50PIXYSMOSFET 6 Amps 500V 1.1 Ohms Rds
auf Bestellung 276 Stücke:
Lieferzeit 10-14 Tag (e)
IXTA70N075T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 150W; TO263; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Power dissipation: 150W
Case: TO263
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA70N075T2IXYSMOSFET 70 Amps 75V 0.0120 Rds
Produkt ist nicht verfügbar
IXTA70N075T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 150W; TO263; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Power dissipation: 150W
Case: TO263
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
Produkt ist nicht verfügbar
IXTA70N075T2IXYSDescription: MOSFET N-CH 75V 70A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2725 pF @ 25 V
Produkt ist nicht verfügbar
IXTA70N075T2-TRLIXYSDescription: MOSFET N-CH 75V 70A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2725 pF @ 25 V
Produkt ist nicht verfügbar
IXTA70N075T2-TRLIXYSMOSFET IXTA70N075T2 TRL
Produkt ist nicht verfügbar
IXTA70N075T2TRLLittelfuseTrans MOSFET N-CH 75V 70A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA70N085TIXYSDescription: MOSFET N-CH 85V 70A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V
Produkt ist nicht verfügbar
IXTA72N20TIXYSMOSFET 72 Amps 200V 33 Rds
Produkt ist nicht verfügbar
IXTA72N20TIXYSDescription: MOSFET N-CH 200V 72A TO-263
Produkt ist nicht verfügbar
IXTA74N15TIXYSDescription: MOSFET N-CH 150V 74A TO-263
Produkt ist nicht verfügbar
IXTA75N10PLittelfuseTrans MOSFET N-CH 100V 75A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA75N10PIXYSMOSFET 75 Amps 100V 0.025 Rds
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.89 EUR
10+ 7.99 EUR
50+ 7.55 EUR
100+ 6.53 EUR
500+ 5.58 EUR
IXTA75N10PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
Produkt ist nicht verfügbar
IXTA75N10PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA75N10PIXYSDescription: MOSFET N-CH 100V 75A TO263
auf Bestellung 205 Stücke:
Lieferzeit 10-14 Tag (e)
IXTA75N10P-TRLIXYSDescription: MOSFET N-CH 100V 75A TO263
Produkt ist nicht verfügbar
IXTA75N10P-TRLIXYSMOSFET IXTA75N10P TRL
Produkt ist nicht verfügbar
IXTA76N075TIXYSDescription: MOSFET N-CH 75V 76A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 25 V
Produkt ist nicht verfügbar
IXTA76N25TIXYSMOSFET 76 Amps 250V 39 Rds
Produkt ist nicht verfügbar
IXTA76N25TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO263
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA76N25TIXYSDescription: MOSFET N-CH 250V 76A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
auf Bestellung 3033 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.1 EUR
10+ 8.48 EUR
100+ 6.86 EUR
500+ 6.1 EUR
1000+ 5.22 EUR
2000+ 4.92 EUR
Mindestbestellmenge: 2
IXTA76N25TLittelfuseTrans MOSFET N-CH 250V 76A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA76N25TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO263
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
Produkt ist nicht verfügbar
IXTA76N25T-TRLIXYSDescription: MOSFET N-CH 250V 76A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 38A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+6.1 EUR
Mindestbestellmenge: 800
IXTA76N25T-TRLIXYSMOSFET IXTA76N25T TRL
Produkt ist nicht verfügbar
IXTA76P10TLittelfuseTrans MOSFET P-CH 100V 76A 3-Pin(2+Tab) TO-263AA
auf Bestellung 3500 Stücke:
Lieferzeit 14-21 Tag (e)
17+9.55 EUR
19+ 8.11 EUR
25+ 7.73 EUR
50+ 6.84 EUR
100+ 5.25 EUR
1000+ 4.33 EUR
Mindestbestellmenge: 17
IXTA76P10TLittelfuseTrans MOSFET P-CH 100V 76A 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA76P10TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
Produkt ist nicht verfügbar
IXTA76P10TLittelfuseTrans MOSFET P-CH 100V 76A 3-Pin(2+Tab) TO-263AA
auf Bestellung 3500 Stücke:
Lieferzeit 14-21 Tag (e)
17+9.55 EUR
19+ 8.11 EUR
25+ 7.73 EUR
50+ 6.84 EUR
100+ 5.25 EUR
1000+ 4.33 EUR
Mindestbestellmenge: 17
IXTA76P10TIXYSMOSFET -76 Amps -100V 0.024 Rds
auf Bestellung 2034 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.24 EUR
10+ 9.54 EUR
50+ 7.97 EUR
100+ 7.32 EUR
250+ 7 EUR
500+ 6.85 EUR
IXTA76P10T
Produktcode: 198462		Transistoren > Transistoren P-Kanal-Feld
Produkt ist nicht verfügbar
IXTA76P10TIXYSDescription: MOSFET P-CH 100V 76A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
auf Bestellung 3475 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.31 EUR
50+ 8.24 EUR
100+ 7.37 EUR
500+ 6.51 EUR
1000+ 5.85 EUR
2000+ 5.49 EUR
Mindestbestellmenge: 2
IXTA76P10TLittelfuseTrans MOSFET P-CH 100V 76A 3-Pin(2+Tab) TO-263AA
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
18+8.6 EUR
Mindestbestellmenge: 18
IXTA76P10TIXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXTA76P10T - Leistungs-MOSFET, p-Kanal, 100 V, 76 A, 0.025 ohm, TO-263AA, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 76A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 298W
Bauform - Transistor: TO-263AA
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchP
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.025ohm
auf Bestellung 1523 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA76P10TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA76P10T-TRLLittelfuse Inc.Description: MOSFET P-CH 100V 76A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
auf Bestellung 2925 Stücke:
Lieferzeit 10-14 Tag (e)
IXTA76P10T-TRLIXYSMOSFET -76 Amps -100V 0.024 Rds
Produkt ist nicht verfügbar
IXTA76P10T-TRLLittelfuseTrans MOSFET P-CH 100V 76A 3-Pin(2+Tab) TO-263AA
auf Bestellung 6400 Stücke:
Lieferzeit 14-21 Tag (e)
800+5.13 EUR
4000+ 4.9 EUR
Mindestbestellmenge: 800
IXTA76P10T-TRLLittelfuse Inc.Description: MOSFET P-CH 100V 76A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
IXTA76P10T-TRLLittelfuseTrans MOSFET P-CH 100V 76A 3-Pin(2+Tab) TO-263AA
auf Bestellung 636 Stücke:
Lieferzeit 14-21 Tag (e)
20+7.92 EUR
22+ 6.84 EUR
25+ 6.19 EUR
100+ 5.48 EUR
250+ 5.11 EUR
500+ 4.44 EUR
Mindestbestellmenge: 20
IXTA76P10T-TRLLittelfuseTrans MOSFET P-CH 100V 76A 3-Pin(2+Tab) TO-263AA
auf Bestellung 636 Stücke:
Lieferzeit 14-21 Tag (e)
20+7.92 EUR
22+ 6.84 EUR
25+ 6.19 EUR
100+ 5.48 EUR
250+ 5.11 EUR
500+ 4.44 EUR
Mindestbestellmenge: 20
IXTA76P10T-TRLLittelfuseTrans MOSFET P-CH 100V 76A 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA76P10T-TRLLittelfuseTrans MOSFET P-CH 100V 76A 3-Pin(2+Tab) TO-263AA
auf Bestellung 6400 Stücke:
Lieferzeit 14-21 Tag (e)
800+5.13 EUR
4000+ 4.9 EUR
Mindestbestellmenge: 800
IXTA7N60PIXYSDescription: MOSFET N-CH 600V 7A D2-PAK
auf Bestellung 43 Stücke:
Lieferzeit 10-14 Tag (e)
IXTA80N075L2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Mounting: SMD
On-state resistance: 24mΩ
Reverse recovery time: 160ns
Power dissipation: 357W
Gate charge: 103nC
Polarisation: unipolar
Features of semiconductor devices: linear power mosfet
Drain current: 80A
Kind of channel: enhanced
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.45 EUR
6+ 12.11 EUR
Mindestbestellmenge: 4
IXTA80N075L2LittelfuseTrans MOSFET N-CH 75V 80A 3-Pin(2+Tab) D2PAK Tube
Produkt ist nicht verfügbar
IXTA80N075L2IXYSDescription: MOSFET N-CH 75V 80A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
auf Bestellung 839 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.54 EUR
50+ 17.44 EUR
100+ 16.41 EUR
500+ 14.87 EUR
IXTA80N075L2LittelfuseTrans MOSFET N-CH 75V 80A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA80N075L2LITTELFUSEDescription: LITTELFUSE - IXTA80N075L2 - MOSFET, N-CH, 75V, 80A, TO-263AA
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 75V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 80A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - Unlimited
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.5V
euEccn: NLR
Verlustleistung: 357W
Bauform - Transistor: TO-263AA
Anzahl der Pins: 3Pin(s)
Produktpalette: LinearL2 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: N Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.024ohm
directShipCharge: 25
SVHC: No SVHC (17-Dec-2014)
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA80N075L2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Mounting: SMD
On-state resistance: 24mΩ
Reverse recovery time: 160ns
Power dissipation: 357W
Gate charge: 103nC
Polarisation: unipolar
Features of semiconductor devices: linear power mosfet
Drain current: 80A
Kind of channel: enhanced
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
Anzahl je Verpackung: 1 Stücke
auf Bestellung 290 Stücke:
Lieferzeit 7-14 Tag (e)
4+18.45 EUR
6+ 12.11 EUR
Mindestbestellmenge: 4
IXTA80N075L2LittelfuseTrans MOSFET N-CH 75V 80A 3-Pin(2+Tab) D2PAK Tube
Produkt ist nicht verfügbar
IXTA80N075L2IXYSMOSFET MOSFET N CHANNEL
auf Bestellung 3777 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.89 EUR
10+ 19.31 EUR
25+ 19.1 EUR
50+ 18.37 EUR
100+ 16.7 EUR
500+ 16.65 EUR
IXTA80N075L2-TRLLittelfuseTrans MOSFET N-CH 75V 80A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA80N075L2-TRLIXYSMOSFET IXTA80N075L2 TRL
Produkt ist nicht verfügbar
IXTA80N075L2-TRLIXYSDescription: MOSFET N-CH 75V 80A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Produkt ist nicht verfügbar
IXTA80N10TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA80N10TIxys CorporationTrans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA80N10TLittelfuse Inc.Description: MOSFET N-CH 100V 80A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
auf Bestellung 4020 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.11 EUR
50+ 4.84 EUR
100+ 4.15 EUR
500+ 3.69 EUR
1000+ 3.16 EUR
2000+ 2.97 EUR
Mindestbestellmenge: 3
IXTA80N10TLittelfuseTrans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA80N10TIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
IXTA80N10TLittelfuseTrans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA80N10TIxys CorporationTrans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA80N10TIXYSMOSFET 80 Amps 100V 13.0 Rds
Produkt ist nicht verfügbar
IXTA80N10T-TRLIXYSMOSFET IXTA80N10T TRL
Produkt ist nicht verfügbar
IXTA80N10T-TRLIXYSDescription: MOSFET N-CH 100V 80A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
Produkt ist nicht verfügbar
IXTA80N10T7IXYSDescription: MOSFET N-CH 100V 80A TO263-7
Produkt ist nicht verfügbar
IXTA80N12T2IXYSMOSFET TrenchT2 MOSFETs Power MOSFETs
Produkt ist nicht verfügbar
IXTA80N12T2IXYSDescription: MOSFET N-CH 120V 80A TO263
Produkt ist nicht verfügbar
IXTA80N12T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO263; 90ns
Mounting: SMD
On-state resistance: 17mΩ
Reverse recovery time: 90ns
Power dissipation: 325W
Gate charge: 80nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 80A
Kind of channel: enhanced
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
Produkt ist nicht verfügbar
IXTA80N12T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO263; 90ns
Mounting: SMD
On-state resistance: 17mΩ
Reverse recovery time: 90ns
Power dissipation: 325W
Gate charge: 80nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 80A
Kind of channel: enhanced
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA86N20TLittelfuseTrans MOSFET N-CH 200V 86A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA86N20TLittelfuseTrans MOSFET N-CH 200V 86A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA86N20TIXYSIXTA86N20T SMD N channel transistors
Produkt ist nicht verfügbar
IXTA86N20TIXYSMOSFET 86 Amps 200V 29 Rds
Produkt ist nicht verfügbar
IXTA86N20TIXYSDescription: MOSFET N-CH 200V 86A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
auf Bestellung 1048 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.37 EUR
10+ 10.22 EUR
100+ 8.37 EUR
500+ 7.13 EUR
1000+ 6.01 EUR
Mindestbestellmenge: 2
IXTA86N20T-TRLIXYSMOSFET IXTA86N20T TRL
Produkt ist nicht verfügbar
IXTA86N20T-TRLIXYSDescription: MOSFET N-CH 200V 86A TO263
Produkt ist nicht verfügbar
IXTA86N20X4LittelfuseDiscrete MOSFET 86A 200V X4 TO263
Produkt ist nicht verfügbar
IXTA86N20X4LittelfuseDiscrete MOSFET 86A 200V X4 TO263
Produkt ist nicht verfügbar
IXTA86N20X4IXYSMOSFET MSFT 86A 200V X4
auf Bestellung 2403 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.6 EUR
10+ 16.4 EUR
25+ 15.96 EUR
50+ 15.73 EUR
IXTA86N20X4IXYSDescription: MOSFET 200V 86A N-CH ULTRA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 4649 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.48 EUR
50+ 14.96 EUR
100+ 14.08 EUR
500+ 12.76 EUR
1000+ 11.7 EUR
IXTA86N20X4-TRLLittelfuseIXTA86N20X4-TRL
Produkt ist nicht verfügbar
IXTA86N20X4-TRLLittelfuseLittelfuse Discrete MOSFET 86A 200V X4 TO263
Produkt ist nicht verfügbar
IXTA88N085TIxys CorporationTrans MOSFET N-CH 85V 88A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA88N085TIXYSDescription: MOSFET N-CH 85V 88A TO-263
Produkt ist nicht verfügbar
IXTA88N085T7IXYSDescription: MOSFET N-CH 85V 88A TO-263-7
Produkt ist nicht verfügbar
IXTA8N50PIXYSMOSFET 8 Amps 500V 0.8 Ohm Rds
Produkt ist nicht verfügbar
IXTA8N50P
Produktcode: 99415		Verschiedene Bauteile > Other components 3
Produkt ist nicht verfügbar
IXTA8N50PIXYSDescription: MOSFET N-CH 500V 8A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Produkt ist nicht verfügbar
IXTA8N50PIXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
IXTA8N50PLittelfuseTrans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA8N65X2Littelfuse Inc.Description: MOSFET N-CH 650V 8A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 2220 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.26 EUR
50+ 4.16 EUR
100+ 3.57 EUR
500+ 3.17 EUR
1000+ 2.72 EUR
2000+ 2.56 EUR
Mindestbestellmenge: 4
IXTA8N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.95 EUR
28+ 2.62 EUR
31+ 2.35 EUR
33+ 2.23 EUR
50+ 2.19 EUR
Mindestbestellmenge: 25
IXTA8N65X2LittelfuseTrans MOSFET N-CH 650V 8A 3-Pin(2+Tab) TO-263AA
Produkt ist nicht verfügbar
IXTA8N65X2IXYSMOSFET MSFT N-CH ULTRA JNCT X2 3&44
auf Bestellung 247 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.23 EUR
10+ 4.77 EUR
50+ 4.12 EUR
100+ 3.63 EUR
250+ 3.48 EUR
IXTA8N65X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)
25+2.95 EUR
28+ 2.62 EUR
31+ 2.35 EUR
33+ 2.23 EUR
50+ 2.19 EUR
Mindestbestellmenge: 25
IXTA8N65X2TRLLittelfuseIXTA8N65X2TRL
Produkt ist nicht verfügbar
IXTA8N70X2IXYSMOSFET 700V/8A Ultra Junct X2-Class MOSFET
Produkt ist nicht verfügbar
IXTA8N70X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 150W; TO263; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 150W
Case: TO263
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA8N70X2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 150W; TO263; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 150W
Case: TO263
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
IXTA8N70X2TRLLittelfuseN-Channel Enhancement Mode Power MOSFET
Produkt ist nicht verfügbar
IXTA8PN50PIXYSDescription: MOSFET N-CH 500V 8A D2-PAK
Produkt ist nicht verfügbar
IXTA90N055TIXYSDescription: MOSFET N-CH 55V 90A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Produkt ist nicht verfügbar
IXTA90N055T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO263; 37ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 90A
Power dissipation: 150W
Case: TO263
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 37ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA90N055T2IXYSDescription: MOSFET N-CH 55V 90A TO-263
Produkt ist nicht verfügbar
IXTA90N055T2LittelfuseTrans MOSFET N-CH 55V 90A Automotive 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA90N055T2IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO263; 37ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 90A
Power dissipation: 150W
Case: TO263
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 37ns
Produkt ist nicht verfügbar
IXTA90N055T2IXYSMOSFET 90 Amps 55V 0.0084 Rds
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.79 EUR
10+ 4 EUR
100+ 3.15 EUR
250+ 3.04 EUR
500+ 2.85 EUR
1000+ 2.78 EUR
IXTA90N075T2IXYSMOSFET 90 Amps 75V 0.01 Rds
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.56 EUR
10+ 3.92 EUR
50+ 3.82 EUR
100+ 3.22 EUR
250+ 3.15 EUR
500+ 3.01 EUR
1000+ 2.82 EUR
IXTA90N075T2IXYSDescription: MOSFET N-CH 75V 90A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Produkt ist nicht verfügbar
IXTA90N075T2-TRLIXYSMOSFET IXTA90N075T2 TRL
Produkt ist nicht verfügbar
IXTA90N075T2-TRLIXYSDescription: MOSFET N-CH 75V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 45A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Produkt ist nicht verfügbar
IXTA90N075T2TRLLittelfuseTrans MOSFET N-CH 75V 90A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IXTA90N15TIXYSDescription: MOSFET N-CH 150V 90A TO-263
Produkt ist nicht verfügbar
IXTA90N20X3LittelfuseTrans MOSFET N-CH 200V 90A 3-Pin(2+Tab) TO-263 Tube
Produkt ist nicht verfügbar
IXTA90N20X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; Idm: 220A; 390W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Pulsed drain current: 220A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 124ns
Produkt ist nicht verfügbar
IXTA90N20X3IXYSDescription: MOSFET N-CH 200V 90A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 45A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
Produkt ist nicht verfügbar
IXTA90N20X3LittelfusePower MOSFET
Produkt ist nicht verfügbar
IXTA90N20X3IXYSMOSFET MSFT N-CH ULTRA JNCT X3 3&44
Produkt ist nicht verfügbar
IXTA90N20X3IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; Idm: 220A; 390W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Pulsed drain current: 220A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 124ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTA94N20X4IXYSDescription: MOSFET 200V 94A N-CH ULTRA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
auf Bestellung 1152 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.08 EUR
50+ 11.8 EUR
Mindestbestellmenge: 2
IXTA94N20X4IXYSMOSFET MSFT 94A 200V X4
auf Bestellung 858 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.17 EUR
10+ 17.76 EUR
100+ 15.35 EUR
500+ 14.47 EUR
IXTA94N20X4LittelfuseDiscrete MOSFET 94A 200V X4 TO263
Produkt ist nicht verfügbar
IXTA96P085TIXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXTA96P085T - Leistungs-MOSFET, p-Kanal, 85 V, 96 A, 0.013 ohm, TO-263AA, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 85V
rohsCompliant: YES
Dauer-Drainstrom Id: 96A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 298W
Bauform - Transistor: TO-263AA
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchP
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.013ohm
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA96P085TLittelfuseTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
auf Bestellung 260 Stücke:
Lieferzeit 14-21 Tag (e)
18+9.05 EUR
20+ 7.51 EUR
25+ 7.18 EUR
50+ 6.46 EUR
100+ 5.36 EUR
Mindestbestellmenge: 18
IXTA96P085TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 55ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 289 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.56 EUR
11+ 6.52 EUR
14+ 5.21 EUR
15+ 4.92 EUR
Mindestbestellmenge: 10
IXTA96P085TLittelfuseTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA96P085TLittelfuseTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA96P085TLittelfuseTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
17+9.14 EUR
25+ 8.44 EUR
50+ 7.81 EUR
100+ 7.26 EUR
250+ 6.76 EUR
Mindestbestellmenge: 17
IXTA96P085TIXYSDescription: MOSFET P-CH 85V 96A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 48A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
auf Bestellung 181 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.17 EUR
50+ 8.13 EUR
100+ 7.27 EUR
Mindestbestellmenge: 2
IXTA96P085TLittelfuseTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
auf Bestellung 260 Stücke:
Lieferzeit 14-21 Tag (e)
16+9.76 EUR
19+ 8.1 EUR
25+ 7.74 EUR
50+ 6.97 EUR
100+ 5.78 EUR
Mindestbestellmenge: 16
IXTA96P085TIXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -85V; -96A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -85V
Drain current: -96A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 55ns
auf Bestellung 289 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.56 EUR
11+ 6.52 EUR
14+ 5.21 EUR
15+ 4.92 EUR
Mindestbestellmenge: 10
IXTA96P085TIXYSMOSFET -96 Amps -85V 0.013 Rds
auf Bestellung 9254 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.26 EUR
10+ 9.94 EUR
50+ 8.45 EUR
100+ 7.32 EUR
500+ 6.88 EUR
IXTA96P085TLittelfuseTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
auf Bestellung 603 Stücke:
Lieferzeit 14-21 Tag (e)
17+9.55 EUR
19+ 7.92 EUR
25+ 7.57 EUR
50+ 6.82 EUR
100+ 5.66 EUR
500+ 4.22 EUR
Mindestbestellmenge: 17
IXTA96P085TLittelfuseTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
auf Bestellung 603 Stücke:
Lieferzeit 14-21 Tag (e)
17+9.55 EUR
19+ 7.92 EUR
25+ 7.57 EUR
50+ 6.82 EUR
100+ 5.66 EUR
500+ 4.22 EUR
Mindestbestellmenge: 17
IXTA96P085T TRLIxys CorporationTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA96P085T TRLIxys CorporationTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
21+7.68 EUR
23+ 6.55 EUR
30+ 4.8 EUR
Mindestbestellmenge: 21
IXTA96P085T TRLIxys CorporationTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
21+7.68 EUR
23+ 6.55 EUR
30+ 4.8 EUR
Mindestbestellmenge: 21
IXTA96P085T-TRLLittelfuseTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA96P085T-TRLLittelfuse Inc.Description: MOSFET P-CH 85V 96A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 48A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
IXTA96P085T-TRLLITTELFUSEDescription: LITTELFUSE - IXTA96P085T-TRL - Leistungs-MOSFET, p-Kanal, 85 V, 96 A, 0.013 ohm, TO-263AA, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 85V
rohsCompliant: YES
Dauer-Drainstrom Id: 96A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 298W
Bauform - Transistor: TO-263AA
Anzahl der Pins: 3Pin(s)
Produktpalette: Produktreihe TrenchP
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.013ohm
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 2039 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA96P085T-TRLLittelfuseTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
auf Bestellung 700 Stücke:
Lieferzeit 14-21 Tag (e)
23+6.94 EUR
25+ 5.8 EUR
100+ 4.99 EUR
250+ 4.74 EUR
500+ 4.24 EUR
Mindestbestellmenge: 23
IXTA96P085T-TRLIXYSMOSFET IXTA96P085T TRL
auf Bestellung 3483 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.31 EUR
10+ 8.1 EUR
25+ 7.78 EUR
100+ 6.88 EUR
250+ 6.69 EUR
500+ 6.12 EUR
800+ 5.79 EUR
IXTA96P085T-TRLLittelfuseTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA96P085T-TRLLITTELFUSEDescription: LITTELFUSE - IXTA96P085T-TRL - Leistungs-MOSFET, p-Kanal, 85 V, 96 A, 0.013 ohm, TO-263AA, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 85V
rohsCompliant: YES
Dauer-Drainstrom Id: 96A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Verlustleistung Pd: 298W
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 298W
Bauform - Transistor: TO-263AA
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3Pin(s)
Produktpalette: Produktreihe TrenchP
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.013ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.013ohm
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 2039 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA96P085T-TRLLittelfuseTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
auf Bestellung 700 Stücke:
Lieferzeit 14-21 Tag (e)
23+6.94 EUR
25+ 5.8 EUR
100+ 4.99 EUR
250+ 4.74 EUR
500+ 4.24 EUR
Mindestbestellmenge: 23
IXTA96P085T-TRLLittelfuse Inc.Description: MOSFET P-CH 85V 96A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 48A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
auf Bestellung 4598 Stücke:
Lieferzeit 10-14 Tag (e)
IXTA96P085T-TRLLittelfuseTrans MOSFET P-CH 85V 96A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IXTA98N075TIXYSDescription: MOSFET N-CH 75V 98A TO-263
Produkt ist nicht verfügbar
IXTA98N075T7IXYSDescription: MOSFET N-CH 75V 98A TO-263-7
Produkt ist nicht verfügbar
IXTB1909IXYSDescription: POWER MOSFET 500V 100AMP
auf Bestellung 19470 Stücke:
Lieferzeit 10-14 Tag (e)
1+41.01 EUR
10+ 37.83 EUR
100+ 32.3 EUR
500+ 29.33 EUR
IXTB30N100LLittelfuseTrans MOSFET N-CH 1KV 30A 3-Pin PLUS 264
Produkt ist nicht verfügbar
IXTB30N100LIXYSDescription: MOSFET N-CH 1000V 30A PLUS264
Produkt ist nicht verfügbar
IXTB30N100LIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: PLUS264™
Gate charge: 545nC
Kind of channel: enhanced
Reverse recovery time: 1µs
Drain-source voltage: 1kV
Drain current: 30A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Power dissipation: 800W
Features of semiconductor devices: linear power mosfet
Produkt ist nicht verfügbar
IXTB30N100LIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: PLUS264™
Gate charge: 545nC
Kind of channel: enhanced
Reverse recovery time: 1µs
Drain-source voltage: 1kV
Drain current: 30A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Power dissipation: 800W
Features of semiconductor devices: linear power mosfet
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTB30N100LIXYSMOSFET 30 Amps 1000V
Produkt ist nicht verfügbar
IXTB62N50LIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 62A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 550nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
2+63.86 EUR
25+ 62.76 EUR
Mindestbestellmenge: 2
IXTB62N50LIXYSMOSFET 62 Amps 500V 0.1 Rds
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
1+102.7 EUR
10+ 96.45 EUR
25+ 93.33 EUR
IXTB62N50LIXYSDescription: MOSFET N-CH 500V 62A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 31A, 20V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
1+97.54 EUR
10+ 91.63 EUR
IXTB62N50LIXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 62A; 800W; PLUS264™; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 62A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 550nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
2+63.86 EUR
Mindestbestellmenge: 2
IXTC102N20TIXYSDescription: MOSFET N-CH 200V ISOPLUS220
Produkt ist nicht verfügbar
IXTC102N25TIXYSDescription: MOSFET N-CH 250V ISOPLUS220
Produkt ist nicht verfügbar
IXTC1088
auf Bestellung 2928 Stücke:
Lieferzeit 21-28 Tag (e)
IXTC1088/6E/2C
auf Bestellung 135 Stücke:
Lieferzeit 21-28 Tag (e)