Produkte > BXT

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BXT030N03CBRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 59A; Idm: 360A; 44.6W; PDFN56
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: PDFN56
Gate charge: 66nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
Drain-source voltage: 30V
Drain current: 59A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 44.6W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BXT030N03CBRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 59A; Idm: 360A; 44.6W; PDFN56
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: PDFN56
Gate charge: 66nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 360A
Drain-source voltage: 30V
Drain current: 59A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 44.6W
Produkt ist nicht verfügbar
BXT040N03CBRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BXT040N03CBRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
BXT047N03EBRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; PDFN33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Case: PDFN33
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BXT047N03EBRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; PDFN33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Case: PDFN33
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
BXT071N04EBRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; Idm: 140A; 42W; PDFN33
Mounting: SMD
Case: PDFN33
Kind of package: reel; tape
Power dissipation: 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 8mΩ
Drain current: 23A
Drain-source voltage: 40V
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 140A
Produkt ist nicht verfügbar
BXT071N04EBRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; Idm: 140A; 42W; PDFN33
Mounting: SMD
Case: PDFN33
Kind of package: reel; tape
Power dissipation: 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 8mΩ
Drain current: 23A
Drain-source voltage: 40V
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 140A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BXT090N06BBRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 68A; 4.8W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 4.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 99nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BXT090N06BBRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 68A; 4.8W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 4.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 99nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
BXT1000N06MBRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3
Mounting: SMD
Case: SOT23-3
Drain current: 2A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 12A
Drain-source voltage: 60V
Anzahl je Verpackung: 10 Stücke
auf Bestellung 3157 Stücke:
Lieferzeit 7-14 Tag (e)
680+0.11 EUR
1080+ 0.067 EUR
1400+ 0.051 EUR
1480+ 0.049 EUR
12000+ 0.047 EUR
Mindestbestellmenge: 680
BXT1000N06MBRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3
Mounting: SMD
Case: SOT23-3
Drain current: 2A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 12A
Drain-source voltage: 60V
auf Bestellung 3157 Stücke:
Lieferzeit 14-21 Tag (e)
680+0.11 EUR
1080+ 0.067 EUR
1400+ 0.051 EUR
1480+ 0.049 EUR
Mindestbestellmenge: 680
BXT1150N10DBRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Drain-source voltage: 100V
Drain current: 12.8A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 64A
Mounting: SMD
Case: TO252
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
BXT1150N10DBRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Drain-source voltage: 100V
Drain current: 12.8A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 64A
Mounting: SMD
Case: TO252
Produkt ist nicht verfügbar
BXT1150N10JBRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Drain-source voltage: 100V
Drain current: 5.6A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 32A
Mounting: SMD
Case: SOT89-3
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
BXT1150N10JBRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Drain-source voltage: 100V
Drain current: 5.6A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 32A
Mounting: SMD
Case: SOT89-3
Produkt ist nicht verfügbar
BXT1700P06MBRIDGELUXCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W
Mounting: SMD
Polarisation: unipolar
Case: SOT23-3
Power dissipation: 1.5W
Gate charge: 22nC
Drain current: -2.8A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.17Ω
Pulsed drain current: -16A
auf Bestellung 6285 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.25 EUR
420+ 0.17 EUR
625+ 0.11 EUR
765+ 0.094 EUR
805+ 0.089 EUR
Mindestbestellmenge: 295
BXT1700P06MBRIDGELUXCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W
Mounting: SMD
Polarisation: unipolar
Case: SOT23-3
Power dissipation: 1.5W
Gate charge: 22nC
Drain current: -2.8A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.17Ω
Pulsed drain current: -16A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 6285 Stücke:
Lieferzeit 7-14 Tag (e)
295+0.25 EUR
420+ 0.17 EUR
625+ 0.11 EUR
765+ 0.094 EUR
805+ 0.089 EUR
Mindestbestellmenge: 295
BXT170N06DBRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Pulsed drain current: 200A
Power dissipation: 94W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
BXT170N06DBRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Pulsed drain current: 200A
Power dissipation: 94W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
BXT2-17TFOpto Diode CorpDescription: SENSOR PHOTODIO 4100-4300NM TO37
Packaging: Tray
Package / Case: TO-37-6 Metal Can
Wavelength: 4100nm ~ 4300nm
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Color - Enhanced: Infrared (NIR)
Responsivity @ nm: 120 KV/W @ 4100nm
Active Area: 1mm²
auf Bestellung 76 Stücke:
Lieferzeit 10-14 Tag (e)
1+439.51 EUR
10+ 422.6 EUR
BXT230P03BBRIDGELUXCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: SOP8
Gate charge: 28nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Drain-source voltage: -30V
Drain current: -7A
On-state resistance: 34mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.9W
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3305 Stücke:
Lieferzeit 7-14 Tag (e)
305+0.23 EUR
375+ 0.19 EUR
465+ 0.15 EUR
520+ 0.14 EUR
550+ 0.13 EUR
Mindestbestellmenge: 305
BXT230P03BBRIDGELUXCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: SOP8
Gate charge: 28nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -40A
Drain-source voltage: -30V
Drain current: -7A
On-state resistance: 34mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.9W
auf Bestellung 3305 Stücke:
Lieferzeit 14-21 Tag (e)
305+0.23 EUR
375+ 0.19 EUR
465+ 0.15 EUR
520+ 0.14 EUR
550+ 0.13 EUR
Mindestbestellmenge: 305
BXT270N02MBRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 18A; 1W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7183 Stücke:
Lieferzeit 7-14 Tag (e)
167+0.43 EUR
325+ 0.22 EUR
463+ 0.15 EUR
652+ 0.11 EUR
1303+ 0.055 EUR
2084+ 0.034 EUR
2203+ 0.032 EUR
Mindestbestellmenge: 167
BXT270N02MBRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 18A; 1W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 7183 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
325+ 0.22 EUR
463+ 0.15 EUR
652+ 0.11 EUR
1303+ 0.055 EUR
2084+ 0.034 EUR
2203+ 0.032 EUR
Mindestbestellmenge: 167
BXT2800N10MBRIDGELUXBXT2800N10M SMD N channel transistors
auf Bestellung 5390 Stücke:
Lieferzeit 7-14 Tag (e)
619+0.12 EUR
1498+ 0.048 EUR
1583+ 0.045 EUR
Mindestbestellmenge: 619
BXT280N02BBRIDGELUXCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8
Case: SOP8
Drain-source voltage: 20V
Drain current: 4A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 24A
Mounting: SMD
auf Bestellung 3060 Stücke:
Lieferzeit 14-21 Tag (e)
585+0.12 EUR
730+ 0.098 EUR
935+ 0.077 EUR
990+ 0.072 EUR
Mindestbestellmenge: 585
BXT280N02BBRIDGELUXCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8
Case: SOP8
Drain-source voltage: 20V
Drain current: 4A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 24A
Mounting: SMD
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3060 Stücke:
Lieferzeit 7-14 Tag (e)
585+0.12 EUR
730+ 0.098 EUR
935+ 0.077 EUR
990+ 0.072 EUR
Mindestbestellmenge: 585
BXT2N7002BKBRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Pulsed drain current: 1.8A
Power dissipation: 0.35W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 19810 Stücke:
Lieferzeit 14-21 Tag (e)
1585+0.045 EUR
2235+ 0.032 EUR
3380+ 0.021 EUR
3845+ 0.019 EUR
4070+ 0.018 EUR
12000+ 0.017 EUR
Mindestbestellmenge: 1585
BXT2N7002BKBRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Pulsed drain current: 1.8A
Power dissipation: 0.35W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 19810 Stücke:
Lieferzeit 7-14 Tag (e)
1585+0.045 EUR
2235+ 0.032 EUR
3380+ 0.021 EUR
3845+ 0.019 EUR
4070+ 0.018 EUR
12000+ 0.017 EUR
Mindestbestellmenge: 1585
BXT2S-28TOpto Diode CorpDescription: SENSOR PHOTODIOD 4300-4500NM TO8
Packaging: Tray
Package / Case: TO-8 Style, 6 Leads
Wavelength: 4300nm ~ 4500nm
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Color - Enhanced: Infrared (NIR)
Responsivity @ nm: 50 KV/W @ 4300nm, 75 KV/W @ 4500nm
Active Area: 4mm²
auf Bestellung 92 Stücke:
Lieferzeit 10-14 Tag (e)
1+483.21 EUR
10+ 464.63 EUR
BXT330N06DBRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 80A
Power dissipation: 27.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 24.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BXT330N06D
Produktcode: 197512
Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
BXT330N06DBRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 80A
Power dissipation: 27.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 24.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
BXT3800P06MBRIDGELUXCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.1A; Idm: -12A; 1.2W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 1.2W
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Case: SOT23-3
Drain-source voltage: -60V
Drain current: -2.1A
On-state resistance: 0.55Ω
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
BXT3800P06MBRIDGELUXCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.1A; Idm: -12A; 1.2W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 1.2W
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Case: SOT23-3
Drain-source voltage: -60V
Drain current: -2.1A
On-state resistance: 0.55Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
BXT420N03MBRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 16A; 1.1W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Pulsed drain current: 16A
Power dissipation: 1.1W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5705 Stücke:
Lieferzeit 7-14 Tag (e)
1455+0.049 EUR
1610+ 0.044 EUR
2095+ 0.034 EUR
2215+ 0.032 EUR
12000+ 0.031 EUR
Mindestbestellmenge: 1455
BXT420N03MBRIDGELUXCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 16A; 1.1W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Pulsed drain current: 16A
Power dissipation: 1.1W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 5705 Stücke:
Lieferzeit 14-21 Tag (e)
1455+0.049 EUR
1610+ 0.044 EUR
2095+ 0.034 EUR
2215+ 0.032 EUR
Mindestbestellmenge: 1455
BXT520P02MBRIDGELUXBXT520P02M SMD P channel transistors
auf Bestellung 2700 Stücke:
Lieferzeit 7-14 Tag (e)
674+0.11 EUR
1782+ 0.04 EUR
1885+ 0.038 EUR
Mindestbestellmenge: 674
BXT55C10-GS08VISHAY
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
BXT600P03MBRIDGELUXCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: SOT23-3
On-state resistance: 85mΩ
Pulsed drain current: -16.4A
Type of transistor: P-MOSFET
Drain current: -2.7A
Drain-source voltage: -30V
Power dissipation: 1.51W
Gate charge: 6.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2980 Stücke:
Lieferzeit 7-14 Tag (e)
239+0.3 EUR
481+ 0.15 EUR
695+ 0.1 EUR
869+ 0.082 EUR
973+ 0.074 EUR
1358+ 0.053 EUR
1436+ 0.05 EUR
Mindestbestellmenge: 239
BXT600P03MBRIDGELUXCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: SOT23-3
On-state resistance: 85mΩ
Pulsed drain current: -16.4A
Type of transistor: P-MOSFET
Drain current: -2.7A
Drain-source voltage: -30V
Power dissipation: 1.51W
Gate charge: 6.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
auf Bestellung 2980 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
481+ 0.15 EUR
695+ 0.1 EUR
869+ 0.082 EUR
973+ 0.074 EUR
1358+ 0.053 EUR
1436+ 0.05 EUR
Mindestbestellmenge: 239
BXT848Omron Automation and SafetyDescription: DNJ CABLE
Produkt ist nicht verfügbar
BXT900P06DBRIDGELUXCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: TO252
Kind of channel: enhanced
Type of transistor: P-MOSFET
auf Bestellung 2063 Stücke:
Lieferzeit 14-21 Tag (e)
97+0.74 EUR
162+ 0.44 EUR
190+ 0.38 EUR
237+ 0.3 EUR
432+ 0.17 EUR
457+ 0.16 EUR
Mindestbestellmenge: 97
BXT900P06DBRIDGELUXCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: TO252
Kind of channel: enhanced
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2063 Stücke:
Lieferzeit 7-14 Tag (e)
97+0.74 EUR
162+ 0.44 EUR
190+ 0.38 EUR
237+ 0.3 EUR
432+ 0.17 EUR
457+ 0.16 EUR
Mindestbestellmenge: 97
BXTM-26747-D53KnowlesMicrophones MICROPHONE
Produkt ist nicht verfügbar
BXTM-26747-D53KnowlesDescription: MIC COND ANALOG OMNI -55.5DB
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
BXTS13AIntelHeat Sinks
Produkt ist nicht verfügbar
BXTS13A 937425IntelHeat Sinks BOXED THERMAL
Produkt ist nicht verfügbar
BXTS13A 937425IntelThermal Solution BXTS13A, Retail Box
Produkt ist nicht verfügbar
BXTS13XIntelHeat Sinks
Produkt ist nicht verfügbar
BXTS15AIntelCPU & Chip Coolers Intel Thermal Solution BXTS15A, Retail Box
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+89.6 EUR
10+ 83.37 EUR
25+ 75.05 EUR
50+ 68.78 EUR
100+ 64.61 EUR
250+ 56.27 EUR
500+ 54.19 EUR
BXTSRS1IntelIntel Intel Laminar RS1 Cooler, Bulk
Produkt ist nicht verfügbar